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公开(公告)号：US5426060A
公开(公告)日：1995-06-20
申请号：US939090
申请日：1992-09-02
IPC分类号： H01L27/146 , H04N1/03 , H01L21/66
CPC分类号： H04N1/0308 , H01L27/146 , H01L27/14698 , H04N1/03 , H04N1/1934
摘要： A method of inspecting and a method of manufacturing image sensors formed on a surface of a semiconductor wafer. A semiconductor wafer is provided having image sensors formed on its surface. Grooves are cut at boundaries between image sensors to be inspected, so that each groove has a depth that is smaller than the thickness of the semiconductor wafer. The grooves are cut in the boundaries between the image sensors so that photoN sensing carriers generated in the boundary regions, that are not generated by the image sensor being inspected, do not affect the inspection of the image sensor. The characteristics of the image sensors are inspected before cutting through the semiconductor wafer to form individual image sensors. Thus, in accordance with the present invention, the electrical characteristics of the image sensors can be accurately ascertained either before or after separation from the semiconductor wafer.
摘要翻译： 一种检查方法和形成在半导体晶片的表面上的图像传感器的制造方法。 提供了在其表面上形成有图像传感器的半导体晶片。 在要检查的图像传感器之间的边界处切割凹槽，使得每个凹槽的深度小于半导体晶片的厚度。 在图像传感器之间的边界处切割凹槽，使得在边界区域中产生的不被图像传感器产生的光感测载流子不影响图像传感器的检查。 在切割半导体晶片之前检查图像传感器的特性以形成单独的图像传感器。 因此，根据本发明，可以在与半导体晶片分离之前或之后准确地确定图像传感器的电特性。
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2.发明授权
公开(公告)号：US5329149A
公开(公告)日：1994-07-12
申请号：US775824
申请日：1991-10-11
IPC分类号： H01L27/146 , H04N1/03 , H01L27/14 , H01L29/78
CPC分类号： H04N1/0308 , H01L27/146 , H01L27/14698 , H04N1/03 , H04N1/1934
摘要： An improved image sensor comprises a plurality of photo-sensing elements each comprising an impurity diffusion layer formed in a surface of a semiconductor substrate and arrayed linearly. The photo-sensing elements are of an opposite conductivity type than that of the semiconductor substrate. A transparent insulating film is formed on the photo-sensing elements and the surface of the semiconductor substrate. A non-light transmitting shading film is formed over the transparent insulating film and has photo-sensing windows which overlay a part of each of the photo-sensing elements. The shape and area of each of the photo-sensing elements is equal. The area of each of the photo-sensing windows is equal, but the shape of the first and last photosensing windows is different from that of the remaining photosensing windows. By this arrangement, the amount of photoexcited carriers generated is uniform at all photo-sensing regions, since the area of all photo-sensing windows is equal. Also, since the area and shape of all photo-sensing elements is the same, the amount of photo-excited carriers stored by all the photo-sensing elements is equal, and thus an output current read out from the elements is uniform.
摘要翻译： 改进的图像传感器包括多个光敏元件，每个光敏元件包括形成在半导体衬底的表面中的线性排列的杂质扩散层。 光敏元件与半导体衬底的导电类型相反。 在感光元件和半导体衬底的表面上形成透明绝缘膜。 在透明绝缘膜之上形成非透光遮光膜，并且具有覆盖每个光敏元件的一部分的光敏窗口。 每个感光元件的形状和面积相等。 每个感光窗口的面积相等，但是第一个和最后一个光敏窗口的形状与剩余的光敏窗口的形状不同。 通过这种布置，由于所有感光窗口的面积相等，所以在所有感光区域产生的光激发载流子的量是均匀的。 此外，由于所有感光元件的面积和形状相同，因此所有感光元件所存储的光激发载体的量相等，因此从元件读出的输出电流是均匀的。
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公开(公告)号：US5060084A
公开(公告)日：1991-10-22
申请号：US289185
申请日：1988-12-23
IPC分类号： H04N1/028 , H01L27/146 , H01L31/0248 , H04N1/024 , H04N1/207
CPC分类号： H04N1/02463 , H01L27/14643 , H04N1/024 , H04N1/207
摘要： A semiconductor device for image sensing and printing comprises an integrated circuit composed of a single semiconductor substrate on which are integrated a linear array of phototransistors, driving circuits and control circuits. The control circuits are operable in a read mode for processing output signals from the phototransistors to enable transmission thereof to an external device and are operable in a print mode for processing inputted image data signals to produce printing signals which are applied to the driving circuits for use in driving an external printing device.
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公开(公告)号：US5321303A
公开(公告)日：1994-06-14
申请号：US870808
申请日：1992-04-17
IPC分类号： H01L21/301 , B28D5/00 , B28D5/02 , H01L21/304 , H01L31/02 , H01L29/06
CPC分类号： B28D5/022 , H01L21/3043
摘要： A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a plurality of semiconductor chips diced obliquely are connected, a degree of connecting accuracy is increased, and it is possible to realize a contact-type image sensor of high resolving power and high accuracy.
摘要翻译： 为了使半导体衬底相对于深度方向倾斜地切割，制造使用切割锯的倾斜台的半导体器件的方法。 当倾斜切割的多个半导体芯片被连接时，连接精度的程度增加，并且可以实现高分辨率和高精度的接触型图像传感器。
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5.发明授权Image reading apparatus for converting optical image information into an electrical image signal 失效用于将光学图像信息转换成电子图像信号的图像读取装置
公开(公告)号：US5198654A
公开(公告)日：1993-03-30
申请号：US666864
申请日：1991-03-08
IPC分类号： H04N1/028
CPC分类号： H04N3/1581 , H04N3/1512
摘要： The image reading apparatus is of the multi-chip line sensor having a plurality of photoelectric conversion elements connected through corresponding switching elements commonly to every one another. Each group of the commonly connected photoelectric conversion elements outputs on a common line an image signal which is then fed to a sample hold circuit and is thereafter outputted from a single output terminal. By such construction, the image signal from the photoelectric conversion elements is sequentially outputted externally from the single output terminal in the form of output waveshape as held in the sample hold circuit in such manner as to prolong output duration of each bit image signal to thereby enable fast operation of the line sensor.
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公开(公告)号：US5146074A
公开(公告)日：1992-09-08
申请号：US741997
申请日：1991-08-08
IPC分类号： H01L27/146 , H04N5/335 , H04N5/369 , H04N5/374
CPC分类号： H04N3/1518 , H04N3/1512
摘要： The solid state imaging device having an array of bit units formed in a semiconductor substrate. Each bit unit is comprised of a phototransistor having a collector formed of the semiconductor substrate an emitter and a base, a switching transistor of the MOS type having a drain connected to the emitter of the phototransistor, an initializing transistor of the MOS type having a drain connected to the base of the phototransistor, a source receptive of a first reference voltage, and a gate connected to the emitter of the phototransistor, and a resetting transistor of the MOS type having a drain connected to the emitter of the phototransistor, a source receptive of a second reference voltage, and a gate receptive of a reset signal. The resetting transistor operates in the reset signal to enable the initializing transistor to initialize the phototransistor. The switching transistor drives the initialized phototransistor to effect reading of image.
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公开(公告)号：US5109440A
公开(公告)日：1992-04-28
申请号：US358153
申请日：1989-05-26
IPC分类号： H01L27/146 , H01L31/0248 , H04N1/028 , H04N1/19 , H04N1/193 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/374
CPC分类号： H04N1/193 , H04N3/1581
摘要： A plurality of opto-electro conversion elements are arranged integrally in a row to constitute a line image sensor to produce respective image bit signals. A plurality of switching elements are connected to the corresponding conversion elements and switchable between on and off states to read out the corresponding bit image signals. A scanning circuit scans sequentially the switching elements to successively turn on them to thereby effect the sequential reading of bit image signals. An initiating circuit is connected to the scanning circuit for generating an initiating signal effective to initiate the scanning circuit. An ending circuit is also connected to the scanning circuit and operates after the switching element of last stage is turned off for generating an ending signal indicative of the ending of scanning operation for one line. A control circuit receives the initiating and ending signals and produces a control signal. A gate circuit is commonly connected to the switching elements and made open according to the control signal to output the series of image bit signals.
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公开(公告)号：US4992653A
公开(公告)日：1991-02-12
申请号：US510158
申请日：1990-04-16
IPC分类号： H04N1/028
CPC分类号： H04N3/1575
摘要： The image sensor of the linear type includes a plurality of photoelectric conversion elements, switching elements each having an input terminal connected to each photoelectric conversion element and an output terminal for reading out a detection signal produced from the corresponding photoelectric conversion element, and a scanning circuit for sequentially driving the switching elements. A first common line is connected to output terminals of odd-numbered switching elements. A second common line is connected to output terminals of even-numbered switching elements. A first reading gate has an output terminal and an input terminal connected to the first common line. A first reset gate has an output terminal and an input terminal connected to the first common line. A second reading gate has an output terminal and an input terminal connected to the second common line. A second reset gate has an output terminal and an input terminal connected to the second common line. A third common connecting line is connected between the output terminals of first and second reading gates and a signal output terminal for outputting the detection signals. A reset power source terminal is connected to the output terminals of the first and second reset gates. A control circuit operates with the sequential driving of the switching elements for controlling the first and second reading gates and the first and second reset gates so as to output the detection signals while sequentially resetting the photoelectric conversion elements.
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9.发明授权Method of manufacturing semiconductor device having trapezoidal shaped substrate sections 失效制造具有梯形基板部分的半导体器件的方法
公开(公告)号：US4839300A
公开(公告)日：1989-06-13
申请号：US937532
申请日：1986-12-03
IPC分类号： H01L21/301 , B28D5/00 , B28D5/02 , H01L21/304 , H01L31/02
CPC分类号： B28D5/022 , H01L21/3043
摘要： A method for manufacturing a semiconductor device using inclined stage of a dicing saw in order to cut the semiconductor substrate obliquely with respect to the depthwise direction. When a plurality of semiconductor chips diced obliquely are connected, a degree of connecting accuracy is increased, and it is possible to realize a contact-type image sensor of high resolving power and high accuracy.
摘要翻译： 为了使半导体衬底相对于深度方向倾斜地切割，制造使用切割锯的倾斜台的半导体器件的方法。 当倾斜切割的多个半导体芯片被连接时，连接精度的程度增加，并且可以实现高分辨率和高精度的接触型图像传感器。
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公开(公告)号：US5619345A
公开(公告)日：1997-04-08
申请号：US731741
申请日：1991-07-16
IPC分类号： H04N1/028 , H01L27/146 , H04N1/193 , H04N1/04
CPC分类号： H04N1/1903 , H01L27/146 , H04N1/193 , H04N1/1934
摘要： An image sensor of the contact type is comprised of a plurality of image sensor chips arranged linearly with one another. Each chip has an array of picture elements arranged at a given constant pitch which is set slightly smaller than a standard reading pitch in a main scanning direction, thereby ensuring uniform output performance of the image sensor.
摘要翻译： 接触型的图像传感器由彼此线性排列的多个图像传感器芯片组成。 每个芯片具有以给定的恒定间距排列的像素阵列，其被设置为略小于主扫描方向上的标准读取间距，从而确保图像传感器的均匀的输出性能。
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