摘要:
The solid state imaging device having an array of bit units formed in a semiconductor substrate. Each bit unit is comprised of a phototransistor having a collector formed of the semiconductor substrate an emitter and a base, a switching transistor of the MOS type having a drain connected to the emitter of the phototransistor, an initializing transistor of the MOS type having a drain connected to the base of the phototransistor, a source receptive of a first reference voltage, and a gate connected to the emitter of the phototransistor, and a resetting transistor of the MOS type having a drain connected to the emitter of the phototransistor, a source receptive of a second reference voltage, and a gate receptive of a reset signal. The resetting transistor operates in the reset signal to enable the initializing transistor to initialize the phototransistor. The switching transistor drives the initialized phototransistor to effect reading of image.
摘要:
An image sensor of the contact type is comprised of a plurality of image sensor chips arranged linearly with one another. Each chip has an array of picture elements arranged at a given constant pitch which is set slightly smaller than a standard reading pitch in a main scanning direction, thereby ensuring uniform output performance of the image sensor.
摘要:
A method of inspecting and a method of manufacturing image sensors formed on a surface of a semiconductor wafer. A semiconductor wafer is provided having image sensors formed on its surface. Grooves are cut at boundaries between image sensors to be inspected, so that each groove has a depth that is smaller than the thickness of the semiconductor wafer. The grooves are cut in the boundaries between the image sensors so that photoN sensing carriers generated in the boundary regions, that are not generated by the image sensor being inspected, do not affect the inspection of the image sensor. The characteristics of the image sensors are inspected before cutting through the semiconductor wafer to form individual image sensors. Thus, in accordance with the present invention, the electrical characteristics of the image sensors can be accurately ascertained either before or after separation from the semiconductor wafer.
摘要:
An improved image sensor comprises a plurality of photo-sensing elements each comprising an impurity diffusion layer formed in a surface of a semiconductor substrate and arrayed linearly. The photo-sensing elements are of an opposite conductivity type than that of the semiconductor substrate. A transparent insulating film is formed on the photo-sensing elements and the surface of the semiconductor substrate. A non-light transmitting shading film is formed over the transparent insulating film and has photo-sensing windows which overlay a part of each of the photo-sensing elements. The shape and area of each of the photo-sensing elements is equal. The area of each of the photo-sensing windows is equal, but the shape of the first and last photosensing windows is different from that of the remaining photosensing windows. By this arrangement, the amount of photoexcited carriers generated is uniform at all photo-sensing regions, since the area of all photo-sensing windows is equal. Also, since the area and shape of all photo-sensing elements is the same, the amount of photo-excited carriers stored by all the photo-sensing elements is equal, and thus an output current read out from the elements is uniform.
摘要:
A low-priced contact type color image sensor formed without the need to provide color filters on a linear image sensor. The color filters are formed on a surface of a document side of a transparent protective glass in direct contact with a document for flattening the light irradiation surface, such that the pitch thereof is equal to that of light receiving elements of a linear image sensor.
摘要:
A linear image sensor IC comprising a plurality of switching circuits each connected to a plurality of light receiving elements in series; scanning circuits for sequentially switching said switching circuits; and driving circuits for operating said scanning circuits, wherein a LOCOS isolation layer is formed between an edge in the main scanning direction of the linear image sensor IC which is closest to an array of the light receiving elements and a light receiving portion of the light receiving element. The inventive image sensor IC is mounted by devising so that the circuit can be put into a thin and long pattern in the scanning direction, so that the chip having a width thinner than a thickness thereof which had been beyond expectation by the prior art can be realized. The use of this very thin IC allows a compact IC assembling substrate having less fluctuation among ICs to be manufactured at low cost. Even more, it becomes possible to mount ICs readily on a cylindrical substrate which had been also difficult in the past. Thereby, electronic devices such as a compact and low cost multi-chip type image sensor or multi-chip type thermal head can be realized. Accordingly, it becomes possible to bring down the cost thereof, which had been difficult in the past, and to realize a low cost facsimile.
摘要:
A scanning circuit has path switches connected between a plurality of data flip-flop circuits of the scanning circuit for sequentially reading an output signal in synchronism with a clock. A plurality of control signal lines select the path switches to arbitrarily skip reading of the flip-flop circuits that do not require the scanning circuit and always fix a potential of the skipped data flip-flop circuit. Only the arbitrary data is read, and in the case where unnecessary data exists, reading is skipped, to thereby increase the read rate.
摘要:
To eliminate after-image due to residual charges to provide an output form that is easy to obtain effective on-light output. The outputs of photo-diodes 1 are read out as sequential signal outputs on a common signal line 15 through connected amplifiers 3, and two states of before and after resetting the photo-diodes 1 are outputted in order for each light receiving element.
摘要:
According to the present invention, there is provided an image sensor for receiving light reflected from an original copy on which the light has been irradiated and for converting the received light into electrical signals, the image sensor having a simple configuration, no residual image, a small fluctuation in the dark outputs, and a good S/N ratio. In order to achieve such an image sensor, an output terminal of a photodiode is reset to a constant voltage, and an image signal output of the photodiode and the reference voltage output immediately after the photodiode is reset are performed succeedingly, using a clamping circuit.
摘要:
To reduce current consumption in a contact type linear image sensor of a multi-chip form, a control circuit controls a clock buffer circuit of the device so that the clock buffer is activated only when a picture signal from a corresponding linear image sensor IC is output. The control circuit inputs a control signal, operates the clock buffer, and drives a shift register when a picture signal is to be read out.