公开(公告)号：US07439550B2

公开(公告)日：2008-10-21

申请号：US11276498

申请日：2006-03-02

申请人： Yuko Tomioka ,  Seiichiro Kobayashi ,  Kazuki Takeshima

发明人： Yuko Tomioka ,  Seiichiro Kobayashi ,  Kazuki Takeshima

IPC分类号： H01L29/205 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L33/30 ,  H01L33/38 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10349 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.

摘要翻译： 半导体发光器件可以被配置为防止构成线性电极的部件的扩散迁移。 半导体发光器件可以包括衬底，形成在衬底上并具有最上半导体层的至少一个半导体层，由设置在最上半导体层上的多个层形成的焊盘电极，以及设置在最上层的线性电极 半导体层。 线状电极可以被配置为与顶部半导体层重叠，除了由焊盘电极占据的区域之外。 线性电极也可以被配置为与焊盘电极的一部分接触，并与最顶层的半导体层形成欧姆接触。 作为多个层之一，焊盘电极可以包括在直线电极和焊盘电极之间的接触区域覆盖线状电极的上表面和/或侧壁的一部分或全部的阻挡金属层。

公开(公告)号：US20060197099A1

公开(公告)日：2006-09-07

申请号：US11276498

申请日：2006-03-02

申请人： Yuko Tomioka ,  Seiichiro Kobayashi ,  Kazuki Takeshima

发明人： Yuko Tomioka ,  Seiichiro Kobayashi ,  Kazuki Takeshima

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L33/30 ,  H01L33/38 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/05599 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48666 ,  H01L2224/48669 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/10349 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.

摘要翻译： 半导体发光器件可以被配置为防止构成线性电极的部件的扩散迁移。 半导体发光器件可以包括衬底，形成在衬底上并具有最上半导体层的至少一个半导体层，由设置在最上半导体层上的多个层形成的焊盘电极以及设置在最上层的线性电极 半导体层。 线状电极可以被配置为与顶部半导体层重叠，除了由焊盘电极占据的区域之外。 线性电极也可以被配置为与焊盘电极的一部分接触，并与最顶层的半导体层形成欧姆接触。 作为多个层之一，焊盘电极可以包括在直线电极和焊盘电极之间的接触区域覆盖线状电极的上表面和/或侧壁的一部分或全部的阻挡金属层。

公开(公告)号：US5057102A

公开(公告)日：1991-10-15

申请号：US524876

申请日：1990-05-18

申请人： Yuko Tomioka ,  Hiroshi Koizumi ,  Masatsugu Kijima

发明人： Yuko Tomioka ,  Hiroshi Koizumi ,  Masatsugu Kijima

IPC分类号： A61B18/20 ,  A61B17/00 ,  A61B19/00 ,  A61F9/00 ,  A61F9/007 ,  A61F9/008 ,  A61N5/06

CPC分类号： A61F9/00821 ,  A61B90/36 ,  A61F9/008 ,  A61B2017/00057 ,  A61B2018/2025 ,  A61F2009/00874

摘要： A laser treatment apparatus is to treat a site of disease of a patient with a laser beam. The laser treatment apparatus contains a source of illumination light for irradiating a site of treatment of the patient and a site around the site of treatment with the illumination light; a source of aiming light for irradiating the site of treatment with the aiming light; a light-receiving device for receiving a light reflected from an aiming site to which the aiming light is applied and from a site around the aiming site; a setting means for comparing a ratio of a quantity of light reflected from the aiming site, as received by the light-receiving means, to a quantity of light reflected from the site around the aiming site with a predetermined ratio; and a control unit for controlling an illuminance of the aiming light with respect to the illumination light by adjusting a ratio of the quantity of light reflected from the aiming site to the quantity of light reflected from the site around the aiming site so as to reach a predetermined ratio.