公开(公告)号：US09093562B2

公开(公告)日：2015-07-28

申请号：US12926743

申请日：2010-12-07

申请人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Takahito Suzuki ,  Masaaki Sakuta ,  Ichimatsu Abiko

发明人： Mitsuhiko Ogihara ,  Hiroyuki Fujiwara ,  Takahito Suzuki ,  Masaaki Sakuta ,  Ichimatsu Abiko

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  B41J2/45 ,  H01L27/15

CPC分类号： H01L24/83 ,  B41J2/45 ,  H01L24/29 ,  H01L24/32 ,  H01L27/153 ,  H01L2224/27444 ,  H01L2224/2747 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29114 ,  H01L2224/29117 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/32502 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00

摘要： A semiconductor composite apparatus includes a semiconductor thin film layer and a substrate. The semiconductor thin film layer and the substrate are bonded to each other with a layer of an alloy of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal. The layer of the alloy contains a product resulting from a reaction of the low-melting-point metal and a material of said semiconductor thin film layer.

摘要翻译： 半导体复合装置包括半导体薄膜层和基板。 半导体薄膜层和基板通过形成在半导体薄膜层和基板之间的高熔点金属和低熔点金属的合金层彼此接合。 该合金的熔点高于低熔点金属。 该合金层含有由低熔点金属与所述半导体薄膜层的材料反应产生的产物。

公开(公告)号：US08198621B2

公开(公告)日：2012-06-12

申请号：US12405475

申请日：2009-03-17

申请人： John A. Rogers ,  Dahl-Young Khang ,  Yugang Sun ,  Etienne Menard

发明人： John A. Rogers ,  Dahl-Young Khang ,  Yugang Sun ,  Etienne Menard

IPC分类号： H01L29/72

CPC分类号： H01L23/5387 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02628 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/564 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/151 ,  H01L29/158 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/18 ,  H01L31/1804 ,  H01L2221/68368 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/80894 ,  H01L2224/8385 ,  H01L2924/0002 ,  H01L2924/01002 ,  H01L2924/01003 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/3025 ,  H05K1/0277 ,  H05K1/0283 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

摘要翻译： 本发明提供了拉伸，压缩，弯曲或以其它方式变形时能够提供良好性能的可拉伸和可选择的可印刷的半导体和电子电路。 本发明的可拉伸半导体和电子电路除了具有可拉伸性以外，对于一些应用而言是优选的，因此能够沿着一个或多个轴显着伸长，弯曲，弯曲或其它变形。 此外，本发明的可拉伸半导体和电子电路可以适用于宽范围的器件配置，以提供完全灵活的电子和光电器件。

公开(公告)号：US20120048606A1

公开(公告)日：2012-03-01

申请号：US12673443

申请日：2008-07-29

申请人： Hiroyuki Izawa ,  Toshiaki Shirasaka ,  Shigeki Katogi ,  Sunao Kudou ,  Keiko Tomizawa

发明人： Hiroyuki Izawa ,  Toshiaki Shirasaka ,  Shigeki Katogi ,  Sunao Kudou ,  Keiko Tomizawa

IPC分类号： H05K1/02 ,  C08F230/08 ,  C09J133/10 ,  H01B1/12 ,  C08K5/521 ,  C09J175/04 ,  C09J179/08 ,  C08F220/18 ,  C09J163/00

CPC分类号： H05K3/323 ,  C08G77/442 ,  C08L83/00 ,  C09J133/04 ,  C09J183/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29393 ,  H01L2224/32225 ,  H01L2224/83851 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/19042 ,  H05K2201/0212 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： The adhesive composition of the invention contains (a) organic fine particles comprising at least one selected from the group consisting of alkyl (meth)acrylate ester-butadiene-styrene copolymer or complexes thereof, alkyl (meth)acrylate ester-silicone copolymer or complexes thereof and silicone-(meth)acrylic acid copolymer or complexes thereof.

摘要翻译： 本发明的粘合剂组合物含有（a）包含选自（甲基）丙烯酸烷基酯 - 丁二烯 - 苯乙烯共聚物或其络合物中的至少一种的有机细颗粒，（甲基）丙烯酸烷基酯 - 硅氧烷共聚物或其配合物 硅氧烷 - （甲基）丙烯酸共聚物或其复合物。

公开(公告)号：US20100123268A1

公开(公告)日：2010-05-20

申请号：US12621804

申请日：2009-11-19

申请人： Etienne MENARD

发明人： Etienne MENARD

IPC分类号： B28B11/08 ,  B29C59/00

CPC分类号： H01L21/6835 ,  H01L21/67092 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L2221/68354 ,  H01L2224/75303 ,  H01L2224/75305 ,  H01L2224/75315 ,  H01L2224/7598 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/01051 ,  H01L2924/00

摘要： Provided are methods and devices for transfer printing of semiconductor elements to a receiving surface. In an aspect, the printing is by conformal contact between an elastomeric stamp inked with the semiconductor elements and a receiving surface, and during stamp removal, a shear offset is applied between the stamp and the receiving surface. The shear-offset printing process achieves high printing transfer yields with good placement accuracy. Process parameter selection during transfer printing, including time varying stamp-backing pressure application and vertical displacement, yields substantially constant delamination rates with attendant transfer printing improvement.

摘要翻译： 提供了用于将半导体元件转印到接收表面的方法和装置。 在一个方面，打印是通过在与半导体元件和接收表面之间着墨的弹性体印章之间的共形接触，并且在印模移除期间，在印模和接收表面之间施加剪切偏移。 剪切胶版印刷工艺实现了高印刷转印率，具有良好的定位精度。 转印期间的工艺参数选择，包括随时间变化的背压压力施加和垂直位移，产生基本上恒定的分层率，伴随着转印打印的改进。

公开(公告)号：US20080017873A1

公开(公告)日：2008-01-24

申请号：US11778736

申请日：2007-07-17

申请人： Katsuhiro Tomoda ,  Shiyuki Kanisawa ,  Hidetsugu Namiki

发明人： Katsuhiro Tomoda ,  Shiyuki Kanisawa ,  Hidetsugu Namiki

IPC分类号： H01L33/00 ,  H01K1/16 ,  H01R9/00 ,  H05K3/02 ,  H05K3/30

CPC分类号： H05K3/326 ,  H01L23/49811 ,  H01L24/16 ,  H01L24/80 ,  H01L24/83 ,  H01L24/90 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L33/62 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/1319 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13666 ,  H01L2224/16 ,  H01L2224/2919 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83908 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/14 ,  H01R12/52 ,  H01R13/03 ,  H01R13/24 ,  H05K1/111 ,  H05K3/305 ,  H05K3/4007 ,  H05K2201/0314 ,  H05K2201/0367 ,  H05K2201/10977 ,  H05K2203/1189 ,  Y10T29/49139 ,  Y10T29/49155 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A mounting structure and a mounting method which are capable of securely electrically connecting wiring on a board and a device to each other in the case where the device is mounted on the board, and are capable of forming a finer bump, and increasing the number of pins are provided. A device includes at least one projection having a structure in which a surface of at least a tip part of a projecting section made of an elastic body is coated with a conductive film.

摘要翻译： 一种安装结构和安装方法，其能够在将装置安装在基板上的情况下将板上的布线和设备彼此牢固地电连接，并且能够形成更细的凸起，并且增加数量 提供引脚。 一种装置包括至少一个具有结构的突起，其中由弹性体制成的突出部分的至少顶端部分的表面涂覆有导电膜。

公开(公告)号：US07271421B2

公开(公告)日：2007-09-18

申请号：US10910658

申请日：2004-08-04

申请人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Satoshi Sugiyama ,  Toshimitsu Sukegawa ,  Masahiro Noguchi

发明人： Tomihisa Yukimoto ,  Eiichi Kunitake ,  Satoshi Sugiyama ,  Toshimitsu Sukegawa ,  Masahiro Noguchi

IPC分类号： H01L33/00 ,  H01L23/48

CPC分类号： H01L24/02 ,  B41J2/45 ,  H01L25/0753 ,  H01L2224/04042 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00

摘要： A light-emitting diode array comprising a conductive layer formed on a substrate, pluralities of separate light-emitting portions formed on the conductive layer, a first groove formed in the conductive layer to divide the light-emitting portions to blocks, a first electrodes formed on at least part of an upper surface of each light-emitting portion, a second electrode formed directly on the conductive layer in each block, switching common wirings separately connecting the first electrodes and first bonding pads each connected to each common wiring, first bonding pads each connected to each common wiring, and second bonding pads each connected to each second electrode, the first bonding pads and the second bonding pads being arranged longitudinally in a row, and a ratio of the number of the first bonding pads to the number of the second bonding pads being 1:n (n≧3).

摘要翻译： 一种发光二极管阵列，包括形成在基板上的导电层，形成在所述导电层上的多个分立的发光部分，形成在所述导电层中的将所述发光部分分割成块的第一凹槽，形成的第一电极 在每个发光部分的上表面的至少一部分上，直接形成在每个块中的导电层上的第二电极，切换分别连接每个公共布线的第一电极和第一接合焊盘的公共布线，第一接合焊盘 每个连接到每个公共布线，以及每个连接到每个第二电极的第二接合焊盘，第一接合焊盘和第二接合焊盘被纵向排列成一排，并且第一接合焊盘的数量与 第二接合焊盘为1：n（n> = 3）。

公开(公告)号：US20060286785A1

公开(公告)日：2006-12-21

申请号：US11423287

申请日：2006-06-09

申请人： John Rogers ,  Dahl-Young Khang ,  Yugang Sun

发明人： John Rogers ,  Dahl-Young Khang ,  Yugang Sun

IPC分类号： H01L21/20

CPC分类号： H01L23/5387 ,  B81C2201/0185 ,  B82Y10/00 ,  H01L21/02422 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02628 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/564 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L27/1266 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/06 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/151 ,  H01L29/158 ,  H01L29/16 ,  H01L29/1602 ,  H01L29/1606 ,  H01L29/7781 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0392 ,  H01L31/03925 ,  H01L31/03926 ,  H01L31/18 ,  H01L31/1804 ,  H01L2221/68368 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/80894 ,  H01L2224/8385 ,  H01L2924/0002 ,  H01L2924/01002 ,  H01L2924/01003 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/1461 ,  H01L2924/3025 ,  H05K1/0277 ,  H05K1/0283 ,  Y02E10/547 ,  Y02P70/521 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

摘要翻译： 本发明提供了拉伸，压缩，弯曲或以其它方式变形时能够提供良好性能的可拉伸和可选择的可印刷的半导体和电子电路。 本发明的可拉伸半导体和电子电路除了具有可拉伸性以外，对于一些应用而言是优选的，因此能够沿着一个或多个轴显着伸长，弯曲，弯曲或其它变形。 此外，本发明的可拉伸半导体和电子电路可以适用于宽范围的器件配置，以提供完全灵活的电子和光电器件。

公开(公告)号：US06881599B2

公开(公告)日：2005-04-19

申请号：US10894771

申请日：2004-07-20

申请人： Toyoharu Oohata

发明人： Toyoharu Oohata

IPC分类号： G09F9/33 ,  H01L21/205 ,  H01L21/338 ,  H01L21/60 ,  H01L23/12 ,  H01L25/075 ,  H01L29/812 ,  H01L33/14 ,  H01L33/30 ,  H01L33/34 ,  H01L33/54 ,  H01L33/56 ,  H01L33/62 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01L21/20 ,  H01L21/44

CPC分类号： H01L33/54 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68368 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01S5/02 ,  H01S5/02228 ,  H01S5/02236 ,  H01S5/0425 ,  H01S5/183 ,  H01L2924/00

摘要： A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

公开(公告)号：US20040037333A1

公开(公告)日：2004-02-26

申请号：US10629670

申请日：2003-07-30

申请人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.

发明人： Kazutoshi Onozawa ,  Tetsuzo Ueda ,  Daisuke Ueda

IPC分类号： H01S003/04 ,  H01S005/00

CPC分类号： H01S5/02252 ,  G11B7/1275 ,  G11B7/22 ,  G11B2007/0006 ,  H01L24/95 ,  H01L2224/95085 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01049 ,  H01L2924/10329 ,  H01L2924/10349 ,  H01L2924/12042 ,  H01L2924/14 ,  H01S5/02236 ,  H01S5/4031 ,  H01L2924/00

摘要： A semiconductor laser device includes a substrate which is made of, e.g., silicon and which has in its principal surface first and second recessed portions formed at a distance from each other. Disposed in the first recessed portion is a first semiconductor laser chip in the form of a function block, which emits an infrared laser beam. Disposed in the second recessed portion is a second semiconductor laser chip in the form of a function block, which emits a red laser beam.

摘要翻译： 半导体激光器件包括由例如硅制成并且在其主表面中形成有彼此间隔一定距离的第一和第二凹部的衬底。 设置在第一凹部中的是发射红外激光束的功能块形式的第一半导体激光器芯片。 设置在第二凹部中的是发射红色激光束的功能块形式的第二半导体激光器芯片。

公开(公告)号：US20030160258A1

公开(公告)日：2003-08-28

申请号：US10308914

申请日：2002-12-03

申请人： Sony Corporation

发明人： Toyoharu Oohata

IPC分类号： H01L033/00 ,  H01L021/00

CPC分类号： H01L33/54 ,  H01L24/24 ,  H01L24/82 ,  H01L25/0753 ,  H01L33/62 ,  H01L2221/68368 ,  H01L2224/24137 ,  H01L2224/24226 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01S5/02 ,  H01S5/02228 ,  H01S5/02236 ,  H01S5/0425 ,  H01S5/183 ,  H01L2924/00

摘要： A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

摘要翻译： 通过外延生长在种子晶体基板上形成的半导体晶体层在除去晶种基板的状态下嵌入绝缘材料中，分别在半导体晶体层的第一表面和半导体晶体层的第二表面上设置电极 并且与电极连接的引出电极被引出到绝缘材料的相同的表面侧。 半导体晶体层用作半导体发光器件或半导体电子器件。 绝缘材料例如是树脂。