摘要:
An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.
摘要:
An organic light-emitting display apparatus includes a thin film transistor having an active layer, a gate electrode, and source and drain electrodes, an organic light-emitting device having a pixel electrode connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode, and an opposite electrode contact portion having a joining region and an insulating region. The opposite electrode and a power interconnection line contact each other in the joining region. An insulating layer is interposed between the opposite electrode and the power interconnection line in the insulating region, and a portion of the insulating layer penetrates into the power interconnection line in the insulating region.
摘要:
A method of repairing a defective pixel in a display apparatus that includes forming an insulating layer to cover the plurality of second signal wires, cutting both sides of a region of the corresponding second signal wire of the defective pixel and the insulating layer to form both sides of a cut region, forming contact holes adjacent to the both sides of the cut region, respectively, such that an upper portion of the corresponding second signal wire is exposed, forming a repair metal layer on the insulating layer to contact the contact holes and the second signal wire, and forming a repair insulating layer to cover the repair metal layer.
摘要:
An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.
摘要:
An organic light-emitting apparatus includes a thin film transistor (TFT) including an active layer, a gate electrode, and source and drain electrodes, an organic light-emitting device including a pixel electrode connected to the TFT, an intermediate layer including an emissive layer, and an opposite electrode, an opposite electrode contact portion connecting the opposite electrode to a power interconnection line. The power interconnection line connected to the opposite electrode contact portion includes a first interconnection layer and a second interconnection layer which are stacked without an insulating layer therebetween.
摘要:
An organic light emitting diode display, which can obtain a resonance effect by its metal mirror, and a manufacturing method thereof. The display includes a semiconductor layer, a dummy pattern layer, a gate insulating film, a pixel electrode, and a gate electrode. The semiconductor layer is formed of polysilicon on a base substrate. The dummy pattern layer is formed of polysilicon at a same layer level as the semiconductor layer and surrounds a light emitting region. The gate insulating film is on the base substrate while covering the semiconductor layer and the dummy pattern layer, and has recess portions corresponding to the light emitting region. The pixel electrode is filled in the recess portions, and is formed of a metal mirror multilayer including a transmissive conductive film and a reflective conductive film. The gate electrode is on the gate insulating film at a distance from the pixel electrode.
摘要:
An organic light-emitting display device includes a buffer layer on a substrate that has a plurality of insulating layers having different refractive indexes, and at least one of the insulating layers have different thicknesses on the same level. The device further includes an active layer of a thin film transistor in a thick area of the buffer layer, a pixel electrode in a thin area of the buffer layer, a gate electrode of the thin film transistor on the active layer and source and drain electrodes of the thin film transistor connected to the active layer, and a gate insulating layer between the gate electrode and the source and drain electrodes. The device also includes an emission layer on the pixel electrode, an opposite electrode facing the pixel electrode, and the emission layer is between the opposite electrode and the pixel electrode.
摘要:
A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.
摘要:
An organic light-emitting display and a method of manufacturing the organic light-emitting display are disclosed. In one embodiment, the organic light-emitting display includes: i) a pixel electrode disposed on a substrate, ii) an opposite electrode disposed opposite to the pixel electrode, iii) an organic emission layer disposed between the pixel electrode and the opposite electrode; a light-scattering portion disposed between the substrate and the organic emission layer, including a plurality of scattering patterns for scattering light emitted from the organic emission layer in insulating layers having different refractive indexes. The display may further include a plurality of light absorption portions disposed between the light-scattering portion and the organic emission layer to correspond to the scattering patterns.
摘要:
The present invention relates to a thin film transistor, a method thereof and an organic light emitting device including the thin film transistor. According to an embodiment of the present invention, the thin film transistor includes a substrate, a control electrode, an insulating layer, a first electrode and a second electrode, a first ohmic contact layer and a second ohmic contact layer, and a semiconductor layer. The control electrode is formed on the substrate, and the insulating layer is formed on the control electrode. The first and the second electrodes are formed on the insulating layer. The first ohmic contact layer and the second ohmic contact layer are formed on the first electrode and the second electrode. The semiconductor layer is formed on the first ohmic contact layer and the second ohmic contact layer to fill between the first and the second electrodes.