摘要:
The present invention discloses a method of mask reduction for producing a low-temperature polysilicon thin film transistor array by use of a photo-sensitive low-K dielectric, which comprises the steps of: defining a polysilicon-island on a preprocessed glass substrate; forming a gate oxide layer and a first metal layer in sequence; patterning the first metal layer to define a gate; forming a photosensitive dielectric layer; patterning the photosensitive dielectric layer and the gate oxide layer to form a plurality of contact holes, wherein said photo-sensitive low-K dielectric masks said gate oxide layer during said patterning of said gate oxide layer; forming a transmissive pixel layer and patterning the same; and forming a reflective pixel electrode layer and patterning the same.
摘要:
An optical mouse has a housing, a printed circuit board, a light source unit, a photodetector unit, a light-guiding unit and a lens unit. The light source unit has different colors of image light sources and is disposed on the printed circuit board. The light-guiding unit is arranged in the housing and adjacent to the light source unit for guiding a non-complementary color light relative to a reflection surface from one of the image light sources to the reflection surface. The lens unit is arranged in the housing and positioned below the photodetector unit for converging a reflected light reflected by the reflection surface into the photodetector unit. Furthermore, the optical mouse can be operated on various colors of reflection surfaces, and still retains better sensitivity.
摘要:
The present invention discloses a method of mask reduction of low-temperature polysilicon thin film transistor array by use of photo-sensitive low-K dielectric, which comprises the steps of: defining a polysilicon-island on a preprocessed glass substrate; forming a gate oxide layer and a first metal layer in sequence; patterning the first metal layer to define a gate; forming a photosensitive dielectric layer; patterning the photosensitive dielectric layer and the gate oxide layer to form a plurality of contact holes; forming a transmissive pixel layer and patterning the same; and forming a reflective pixel electrode layer and patterning the same.