公开(公告)号：US07544569B2

公开(公告)日：2009-06-09

申请号：US11516431

申请日：2006-09-05

申请人： Feng Gao ,  Ya-Fen Lin ,  John W. Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

发明人： Feng Gao ,  Ya-Fen Lin ,  John W. Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/42336 ,  G11C16/0425 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/42328

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括第二导电类型的第一区域和第二导电类型的第二区域，与第一区域间隔开，由此在其间限定沟道区域。 多个浮动栅极彼此间隔开并且各自与沟道区域绝缘。 多个控制栅极彼此间隔开，每个控制栅极与沟道区域绝缘。 每个控制栅极位于一对浮动栅极之间，并且电容耦合到该对浮置栅极。 多个选择栅极彼此间隔开，每个选择栅极与沟道区域绝缘。 每个选择门位于一对浮动门之间。

公开(公告)号：US07247907B2

公开(公告)日：2007-07-24

申请号：US11134557

申请日：2005-05-20

申请人： Feng Gao ,  Ya-Fen Lin ,  John W. Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

发明人： Feng Gao ,  Ya-Fen Lin ,  John W. Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

IPC分类号： H01L29/788

CPC分类号： H01L29/42336 ,  G11C16/0425 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/42328

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括第二导电类型的第一区域和第二导电类型的第二区域，与第一区域间隔开，由此在其间限定沟道区域。 多个浮动栅极彼此间隔开并且各自与沟道区域绝缘。 多个控制栅极彼此间隔开，每个控制栅极与沟道区域绝缘。 每个控制栅极位于一对浮动栅极之间，并且电容耦合到该对浮置栅极。 多个选择栅极彼此间隔开，每个选择栅极与沟道区域绝缘。 每个选择门位于一对浮动门之间。

公开(公告)号：US07242051B2

公开(公告)日：2007-07-10

申请号：US11134540

申请日：2005-05-20

申请人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

发明人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

IPC分类号： H01L29/788

CPC分类号： G11C16/0425 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C2216/18 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7887

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

公开(公告)号：US08780642B2

公开(公告)日：2014-07-15

申请号：US12872351

申请日：2010-08-31

申请人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

发明人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

IPC分类号： G11C11/34 ,  G11C16/04

CPC分类号： G11C16/0425 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C2216/18 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7887

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括在衬底中具有第二导电类型的第二区域的第二导电类型的第一区域，与第一区域间隔开。 在第一区域和第二区域之间限定连续的第一通道区域。 多个浮动栅极彼此间隔开，每个浮置栅极位于沟道区域的独立部分上。 设置有多个控制栅极，每个与浮动栅极相关联并与其相邻。 每个控制栅极具有两个部分：沟道区域的一部分上的第一部分和相关联的浮动栅极上的第二部分，并与其电容耦合。

公开(公告)号：US20100322015A1

公开(公告)日：2010-12-23

申请号：US12872351

申请日：2010-08-31

申请人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

发明人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

IPC分类号： G11C16/16 ,  G11C16/04

CPC分类号： G11C16/0425 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C2216/18 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7887

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括在衬底中具有第二导电类型的第二区域的第二导电类型的第一区域，与第一区域间隔开。 在第一区域和第二区域之间限定连续的第一通道区域。 多个浮动栅极彼此间隔开，每个浮置栅极位于沟道区域的独立部分上。 设置有多个控制栅极，每个与浮动栅极相关联并与其相邻。 每个控制栅极具有两个部分：沟道区域的一部分上的第一部分和相关联的浮动栅极上的第二部分，并与其电容耦合。

公开(公告)号：US07808839B2

公开(公告)日：2010-10-05

申请号：US11810714

申请日：2007-06-06

申请人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

发明人： Yuniarto Widjaja ,  John W. Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

IPC分类号： G11C16/04

CPC分类号： G11C16/0425 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C2216/18 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7887

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括在衬底中具有第二导电类型的第二区域的第二导电类型的第一区域，与第一区域间隔开。 在第一区域和第二区域之间限定连续的第一通道区域。 多个浮动栅极彼此间隔开，每个浮置栅极位于沟道区域的独立部分上。 设置有多个控制栅极，每个与浮动栅极相关联并与其相邻。 每个控制栅极具有两个部分：沟道区域的一部分上的第一部分和相关联的浮动栅极上的第二部分，并与其电容耦合。

公开(公告)号：US20070237005A1

公开(公告)日：2007-10-11

申请号：US11810714

申请日：2007-06-06

申请人： Yuniarto Widjaja ,  John Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

发明人： Yuniarto Widjaja ,  John Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

IPC分类号： G11C11/34

CPC分类号： G11C16/0425 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C2216/18 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7887

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括在衬底中具有第二导电类型的第二区域的第二导电类型的第一区域，与第一区域间隔开。 在第一区域和第二区域之间限定连续的第一通道区域。 多个浮动栅极彼此间隔开，每个浮置栅极位于沟道区域的独立部分上。 设置有多个控制栅极，每个与浮动栅极相关联并与其相邻。 每个控制栅极具有两个部分：沟道区域的一部分上的第一部分和相关联的浮动栅极上的第二部分，并与其电容耦合。

公开(公告)号：US20060273378A1

公开(公告)日：2006-12-07

申请号：US11134557

申请日：2005-05-20

申请人： Feng Gao ,  Ya-Fen Lin ,  John Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

发明人： Feng Gao ,  Ya-Fen Lin ,  John Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

IPC分类号： H01L29/792

CPC分类号： H01L29/42336 ,  G11C16/0425 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/42328

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括第二导电类型的第一区域和第二导电类型的第二区域，与第一区域间隔开，由此在其间限定沟道区域。 多个浮动栅极彼此间隔开并且各自与沟道区域绝缘。 多个控制栅极彼此间隔开，每个控制栅极与沟道区域绝缘。 每个控制栅极位于一对浮动栅极之间，并且电容耦合到该对浮置栅极。 多个选择栅极彼此间隔开，每个选择栅极与沟道区域绝缘。 每个选择门位于一对浮动门之间。

公开(公告)号：US20060261399A1

公开(公告)日：2006-11-23

申请号：US11134540

申请日：2005-05-20

申请人： Yuniarto Widjaja ,  John Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

发明人： Yuniarto Widjaja ,  John Cooksey ,  Changyuan Chen ,  Feng Gao ,  Ya-Fen Lin ,  Dana Lee

IPC分类号： H01L29/788

CPC分类号： G11C16/0425 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/12 ,  G11C16/14 ,  G11C16/26 ,  G11C16/3431 ,  G11C2216/18 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11517 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11529 ,  H01L29/42328 ,  H01L29/66825 ,  H01L29/7887

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type in the substrate with a second region of the second conductivity type in the substrate, spaced apart from the first region. A continuous first channel region is defined between the first region and the second region. A plurality of floating gates are spaced apart from one another with each positioned over a separate portion of the channel region. A plurality of control gates are provided with each associated with and adjacent to a floating gate. Each control gate has two portions: a first portion over a portion of the channel region and a second portion over the associated floating gate and capacitively coupled thereto.

摘要翻译： 在第一导电类型的半导体衬底上形成分离栅极NAND闪速存储器结构。 NAND结构包括在衬底中具有第二导电类型的第二区域的第二导电类型的第一区域，与第一区域间隔开。 在第一区域和第二区域之间限定连续的第一通道区域。 多个浮动栅极彼此间隔开，每个浮置栅极位于沟道区域的独立部分上。 设置有多个控制栅极，每个与浮动栅极相关联并与其相邻。 每个控制栅极具有两个部分：沟道区域的一部分上的第一部分和相关联的浮动栅极上的第二部分，并与其电容耦合。

公开(公告)号：US20070020853A1

公开(公告)日：2007-01-25

申请号：US11516431

申请日：2006-09-05

申请人： Feng Gao ,  Ya-Fen Lin ,  John Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

发明人： Feng Gao ,  Ya-Fen Lin ,  John Cooksey ,  Changyuan Chen ,  Yuniarto Widjaja ,  Dana Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/42336 ,  G11C16/0425 ,  G11C16/0483 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11524 ,  H01L27/11556 ,  H01L29/42328

摘要： A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.