中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

49 records (took 0.024 seconds)

    Method and system for providing a high moment film
    1.
    发明授权
    Method and system for providing a high moment film 有权
    提供高力矩胶片的方法和系统

    公开(公告)号：US08320077B1

    公开(公告)日：2012-11-27

    申请号：US12334753

    申请日：2008-12-15

    Applicant: Yunjun Tang ,  Yun-Fei Li ,  Yingjian Chen

    Inventor： Yunjun Tang ,  Yun-Fei Li ,  Yingjian Chen

    IPC: G11B5/127 ,  G11B5/147 ,  G11B5/31

    CPC classification number: G11B5/147 ,  G11B5/1278 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3146

    Abstract: A method and system for providing a high moment film are disclosed. The high moment film might be used in structures, such as a pole, of a magnetic transducer. The method and system includes providing a plurality of high moment layers and at least one soft magnetic layer interleaved with and ferromagnetically coupled with the plurality of high moment layers. Each of the plurality of high moment layers has a magnetic moment of greater than 2.4 Tesla. The at least one soft magnetic layer has a hard axis coercivity of not more than twenty Oersted. The high moment film has a total thickness of at least one thousand Angstroms.

    Abstract translation: 公开了一种用于提供高力矩薄膜的方法和系统。 高力矩胶片可用于磁性传感器的结构，如磁极。 该方法和系统包括提供多个高力矩层和至少一个与多个高力矩层交织并且与磁化耦合的软磁层。 多个高力矩层中的每一个具有大于2.4特斯拉的磁矩。 所述至少一个软磁性层具有不超过二十奥斯特的硬轴矫顽力。 高力矩薄膜的总厚度至少为一千埃。

    Method for providing a perpendicular magnetic recording (PMR) transducer
    2.
    发明授权
    Method for providing a perpendicular magnetic recording (PMR) transducer 有权
    提供垂直磁记录（PMR）传感器的方法

    公开(公告)号：US08146236B1

    公开(公告)日：2012-04-03

    申请号：US12057692

    申请日：2008-03-28

    Applicant: Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

    Inventor： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

    IPC: G11B5/127 ,  H04R31/00

    CPC classification number: G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    Abstract: A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.

    Abstract translation: 公开了一种用于从极层提供垂直磁记录（PMR）换能器的方法和系统。 第一和第二平坦化停止层设置在极层上。 在第二平坦化停止层上设置掩模。 掩模的第一部分位于用于形成PMR极的极层的一部分上。 在提供面罩之后定义PMR极。 提供至少围绕PMR极的中间层。 至少在中间层上执行第一平面化。 在第一平坦化期间，去除第二平坦化停止层的一部分。 去除第二平坦化停止层的剩余部分。 执行第二平面化。 在第二平面化之后，第一平坦化停止层的一部分保留。 分别在PMR极和写间隙上提供写间隙和屏蔽。

    Method and system for providing a magnetic recording transducer having side shields
    3.
    发明授权
    Method and system for providing a magnetic recording transducer having side shields 有权
    用于提供具有侧屏蔽的磁记录换能器的方法和系统

    公开(公告)号：US08231796B1

    公开(公告)日：2012-07-31

    申请号：US12331238

    申请日：2008-12-09

    Applicant: Yun-Fei Li ,  Yingjian Chen

    Inventor： Yun-Fei Li ,  Yingjian Chen

    IPC: B44C1/22

    CPC classification number: G11B5/3163 ,  G11B5/3116 ,  G11B5/315

    Abstract: A method and system provide a magnetic transducer that includes an underlayer and a nonmagnetic layer on the underlayer. The method and system include providing a trench in the nonmagnetic layer. The trench has a plurality of sides. The method and system also include providing a separation layer in the trench. A portion of the separation layer resides on the sides of the trench. The method and system include providing the main pole. At least part of the main pole resides in the trench on the portion of the separation layer and has a plurality of pole sides. The method and system further include removing at least a portion of the second nonmagnetic layer, thereby exposing the portion of the separation layer. The method and system also include providing a side shield. The separation layer magnetically separates the pole sides from the side shield.

    Abstract translation: 一种方法和系统提供一种在底层上包括底层和非磁性层的磁换能器。 该方法和系统包括在非磁性层中提供沟槽。 沟槽具有多个侧面。 该方法和系统还包括在沟槽中提供分离层。 分离层的一部分位于沟槽的侧面。 该方法和系统包括提供主极。 主极的至少一部分位于分离层部分上的沟槽中，并且具有多个极侧。 所述方法和系统还包括去除第二非磁性层的至少一部分，从而暴露分离层的部分。 该方法和系统还包括提供侧护罩。 分离层将极侧与侧护罩磁性地分离。

    Hard bias design for extra high density recording
    6.
    发明授权
    Hard bias design for extra high density recording 有权
    用于超高密度记录的硬偏置设计

    公开(公告)号：US07688555B2

    公开(公告)日：2010-03-30

    申请号：US10868716

    申请日：2004-06-15

    Applicant: Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

    Inventor： Kunliang Zhang ,  Yun-Fei Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien

    IPC: G11B5/39 ,  G11B5/127

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

    Abstract: A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65Cr15Pt20 layer has a larger Hc value and a thickness about 2 to 10 times greater than that of the Co78.6Cr5.2Pt16.2 layer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the Co78.6Cr5.2Pt16.2 layer is zero and the Co65Cr15Pt20 layer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.

    Abstract translation: 用于偏置读取头内的MR元件中的自由层的硬偏置结构由具有Co78.6Cr5.2Pt16.2 / Co65Cr15Pt20配置的复合硬偏置层组成。 Co65Cr15Pt20上层具有较大的Hc值，厚度约为Co78.6Cr5.2Pt16.2层的2〜10倍。 硬偏压结构还可以包括诸如FeCoMo的BCC底层，其增强了硬偏压结构的磁矩。 可选地，Co78.6Cr5.2Pt16.2层的厚度为零，Co65Cr15Pt20层形成在BCC底层上。 本发明还包括层压硬偏置结构。 可以通过调整BCC底层和CoCrPt层的厚度来优化硬偏置结构的Mrt值。 结果，实现了更大的处理窗口，并且在读取操作期间实现了较低的不对称输出。

    Patterned exchange bias GMR using metallic buffer layer
    7.
    发明授权
    Patterned exchange bias GMR using metallic buffer layer 失效
    图案交换偏置GMR使用金属缓冲层

    公开(公告)号：US07336452B2

    公开(公告)日：2008-02-26

    申请号：US11036957

    申请日：2005-01-14

    Applicant: Moris Dovek ,  Po-Kang Wang ,  Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Yun-Fei Li

    Inventor： Moris Dovek ,  Po-Kang Wang ,  Chen-Jung Chien ,  Chyu-Jiuh Torng ,  Yun-Fei Li

    IPC: G11B5/33

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49036 ,  Y10T29/49044 ,  Y10T29/49046

    Abstract: In magnetic read heads based on bottom spin valves the preferred structure is for the longitudinal bias layer to be in direct contact with the free layer. Such a structure is very difficult to manufacture. The present invention overcomes this problem by introducing an extra layer between the bias electrodes and the free layer. This layer protects the free layer during processing but is thin enough to not interrupt exchange between the bias electrodes and the free layer. In one embodiment this is a layer of copper about 5 Å thick and parallel exchange is operative. In other embodiments ruthenium is used to provide antiparallel exchange between the bias electrode and the free layer. A process for manufacturing the structure is also described.

    Abstract translation: 在基于底部自旋阀的磁性读取头中，优选的结构是使纵向偏置层与自由层直接接触。 这样的结构很难制造。 本发明通过在偏置电极和自由层之间引入额外的层来克服这个问题。 该层在处理过程中保护自由层，但足够薄到不会中断偏置电极和自由层之间的交换。 在一个实施例中，这是一层厚约5埃的铜层并且平行的交换是可操作的。 在其他实施方案中，钌用于在偏置电极和自由层之间提供反向平行交换。 还描述了用于制造该结构的方法。

    Hard biased materials for recording head applications
    8.
    发明授权
    Hard biased materials for recording head applications 失效
    用于记录头应用的硬偏置材料

    公开(公告)号：US07327540B2

    公开(公告)日：2008-02-05

    申请号：US10858029

    申请日：2004-06-01

    Applicant: Yun-Fei Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng

    Inventor： Yun-Fei Li ,  Kunliang Zhang ,  Chyu-Jiuh Torng

    IPC: G11B5/33 ,  G11B5/127 ,  G11B5/39

    CPC classification number: G11B5/39 ,  Y10T428/11 ,  Y10T428/115

    Abstract: A hard bias layer that forms an abutting junction with a free layer in a GMR element and is comprised of FePtCu or FePtCuX where X is B, C, O, Si, or N is disclosed. The FePtCu layer has a composition of about 45 atomic % Fe, 45 atomic % Pt, and 10 atomic % Cu and does not require a seed layer to achieve an ordered structure. The FePtCu layer is annealed at a temperature of about 280° C. and has an Hc value more than double that of a conventional CoCrPt hard bias layer with a similar thickness. Since the FePtCu hard bias layer adjoins a free layer, it has a higher sensor edge pinning efficiency than a configuration with a CoCrPt layer on a seed layer. The novel hard bias layer is compatible with either a top or bottom spin valve structure in a GMR sensor.

    Abstract translation: 公开了与GMR元件中的自由层形成邻接连接并由FePtCu或FePtCuX组成的硬偏置层，其中X是B，C，O，Si或N。 FePtCu层具有约45原子％Fe，45原子％Pt和10原子％Cu的组成，并且不需要种子层来实现有序结构。 FePtCu层在约280℃的温度下进行退火，并且其Hc值大于具有相似厚度的常规CoCrPt硬偏压层的Hc值的两倍以上。 由于FePtCu硬偏置层与自由层相邻，因此与种子层上的CoCrPt层的配置相比，传感器边缘钉扎效率更高。 新颖的硬偏置层与GMR传感器中的顶部或底部自旋阀结构兼容。

    Composite free layer for CIP GMR device
    9.
    发明申请
    Composite free layer for CIP GMR device 失效
    CIP GMR器件的复合自由层

    公开(公告)号：US20060126231A1

    公开(公告)日：2006-06-15

    申请号：US11010105

    申请日：2004-12-10

    Applicant: Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    Inventor： Tong Zhao ,  Hui-Chuan Wang ,  Yun-Fei Li ,  Chyu-Jiuh Torng

    IPC: G11B5/33 ,  G11B5/127

    CPC classification number: G11B5/3903 ,  H01L43/10

    Abstract: In this invention, we replace low resistivity NiFe with high-resistivity FeNi for the FL2 portion of a composite free layer in a CIP GMR sensor in order to minimize current shunting effects while still retaining both magnetic softness and low magnetostriction. A process for manufacturing the device is also described.

    Abstract translation: 在本发明中，为了最小化电流分流效应同时保持磁性柔软性和低磁致伸缩性，我们用CIP GMR传感器中的复合自由层的FL2部分代替具有高电阻率FeNi的低电阻率NiFe。 还描述了用于制造该装置的方法。

Patent Agency Ranking