Abstract:
The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.
Abstract:
The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.
Abstract:
The visible and near-infrared radiation detector includes a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and three interference filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, has no filter. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors. Each interference filter includes an alternation of metal layers and of dielectric layers.
Abstract:
The detector of visible and near-infrared radiation comprises a near-infrared photosensitive element, a readout circuit for reading the near-infrared photosensitive element, four visible photosensitive elements, one of which being placed facing the near-infrared photosensitive element, and four pigmented resin filters to define a pixel quadruplet. A first pixel, including the near-infrared photosensitive element and one of the visible photosensitive elements, is provided with a resin filter opaque to visible radiation. The three other pixels, respectively including the three other visible photosensitive elements, are respectively provided with filters associated with the three primary colors.
Abstract:
The invention relates to tunable wavelength-selective optical filters for letting light of a narrow optical spectrum band, centered around an adjustable wavelength, to pass through and to stop wavelengths lying outside this band. More particularly, the invention relates to a process for the collective fabrication of optical filtering components, consisting in producing a plurality of optical filtering components on a transparent substrate. The process further comprises covering the plurality of components with a transparent collective cover, in optically testing each component individually, and in separating the various components from one another. The invention also relates to a wafer of components, comprising a transparent substrate on which a plurality of optical filtering components has been produced, a transparent cover (8) collectively covering the components. The wafer further includes means for individually testing each component.
Abstract:
The invention relates to tunable wavelength-selective optical filters for letting light of a narrow optical spectrum band, centered around an adjustable wavelength, to pass through and to stop wavelengths lying outside this band. More particularly, the invention relates to a process for the collective fabrication of optical filtering components, consisting in producing a plurality of optical filtering components on a transparent substrate. The process further comprises covering the plurality of components with a transparent collective cover, in optically testing each component individually, and in separating the various components from one another. The invention also relates to a wafer of components, comprising a transparent substrate on which a plurality of optical filtering components has been produced, a transparent cover (8) collectively covering the components. The wafer further includes means for individually testing each component.
Abstract:
The invention relates to wavelength selective optical components for transmitting the light in a narrow spectral band, which is centered around a wavelength, and for reflecting the wavelengths lying outside this band. The component includes an input guide (2) conducting light radiation (3) to a tunable filter (1), an input guide (2) conducting the radiation (3) to the filter (1) in order to perform a first pass through it. The component includes means (6) for returning a first part (4) of the radiation (3) reflected by the filter (1) during the first pass in order to perform a second pass through it.
Abstract:
The light-emitting device includes a base substrate and preferably three light-emitting diodes respectively associated with three primary colors and emitting a part of their signal in the direction of the base substrate. The device includes three chromatic photodetectors formed in the base substrate constituting a semiconducting substrate, and each arranged under an associated light-emitting diode. Each chromatic photodetector includes superposed first, second and third layers. The first layer and third layer have a first type of conductivity and the second layer has a second type of conductivity. The device includes a control component connected to the chromatic photodetectors and to the light-emitting diodes to control the global color of the light emitted by the device.
Abstract:
The light-emitting device includes a base substrate and preferably three light-emitting diodes respectively associated with three primary colors and emitting a part of their signal in the direction of the base substrate. The device includes three chromatic photodetectors formed in the base substrate constituting a semiconducting substrate, and each arranged under an associated light-emitting diode. Each chromatic photodetector includes superposed first, second and third layers. The first layer and third layer have a first type of conductivity and the second layer has a second type of conductivity. The device includes a control component connected to the chromatic photodetectors and to the light-emitting diodes to control the global color of the light emitted by the device.
Abstract:
The invention relates to wavelength-selective and tunable optical filters for transmitting the light in a narrow optical spectral band, centered around an adjustable wavelength, and for blocking the transmission of wavelengths lying outside of this band.In a micromachined monolithic structure containing the optical filter proper, the component comprises a low-absorption light detection element used for slaving the tuning control of the filter to a wavelength received by the filter, this element transmitting the majority of the radiation at this wavelength. The filter is a Fabry-Pérot interferometric filter, the cavity (C) of which is tuned to a value that maximizes the power detected by the light detection element. The filter is preferably based on layers of indium phosphide and air gaps. The detection element preferably comprises a layer of gallium-indium arsenide 74 suitable for detection of the intended wavelength band.