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1.发明申请公开(公告)号：US20150108327A1
公开(公告)日：2015-04-23
申请号：US14402704
申请日：2012-05-29
申请人： Zhihong Huang , Marco Fiorentino , Charles M. Santori , Zhen Peng , Di Liang , Raymond G. Beausoleil
发明人： Zhihong Huang , Marco Fiorentino , Charles M. Santori , Zhen Peng , Di Liang , Raymond G. Beausoleil
IPC分类号： H01L31/107 , H01L31/0224 , H01L31/105
CPC分类号： H01L31/107 , G02B6/42 , H01L31/022408 , H01L31/028 , H01L31/035281 , H01L31/03529 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： A device includes a first region, a multiplication region, a second region, and an absorption region. The first region is associated with a first terminal, and the second region is associated with a second terminal. The first region is separated from the second region by the multiplication region. The absorption region is disposed on the multiplication region and associated with a third terminal. A multiplication region electric field is independently controllable with respect to an absorption region electric field, based on the first terminal, the second terminal, and the third terminal.
摘要翻译： 一种器件包括第一区域，倍增区域，第二区域和吸收区域。 第一区域与第一终端相关联，第二区域与第二终端相关联。 第一区域通过乘法区域与第二区域分离。 吸收区域设置在乘法区域上并与第三终端相关联。 基于第一端子，第二端子和第三端子，乘法区域电场相对于吸收区域电场可独立控制。
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2.发明授权公开(公告)号：US09490385B2
公开(公告)日：2016-11-08
申请号：US14402704
申请日：2012-05-29
申请人： Zhihong Huang , Marco Fiorentino , Charles M. Santori , Zhen Peng , Di Liang , Raymond G. Beausoleil
发明人： Zhihong Huang , Marco Fiorentino , Charles M. Santori , Zhen Peng , Di Liang , Raymond G. Beausoleil
IPC分类号： H01L31/107 , H01L31/0224 , H01L31/105 , G02B6/42 , H01L31/028 , H01L31/0352
CPC分类号： H01L31/107 , G02B6/42 , H01L31/022408 , H01L31/028 , H01L31/035281 , H01L31/03529 , H01L31/105 , H01L31/1075 , Y02E10/547
摘要： A device includes a first region, a multiplication region, a second region, and an absorption region. The first region is associated with a first terminal, and the second region is associated with a second terminal. The first region is separated from the second region by the multiplication region. The absorption region is disposed on the multiplication region and associated with a third terminal. A multiplication region electric field is independently controllable with respect to an absorption region electric field, based on the first terminal, the second terminal, and the third terminal.
摘要翻译： 一种器件包括第一区域，倍增区域，第二区域和吸收区域。 第一区域与第一终端相关联，第二区域与第二终端相关联。 第一区域通过乘法区域与第二区域分离。 吸收区域设置在乘法区域上并与第三终端相关联。 基于第一端子，第二端子和第三端子，乘法区域电场相对于吸收区域电场可独立控制。
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公开(公告)号：US20150076641A1
公开(公告)日：2015-03-19
申请号：US14396419
申请日：2012-07-25
IPC分类号： H01L31/107 , H01L31/0232 , H01L31/18 , H01L31/028
CPC分类号： H01L31/107 , G02B2006/12061 , H01L31/02027 , H01L31/022416 , H01L31/02325 , H01L31/028 , H01L31/03529 , H01L31/1075 , H01L31/1804 , Y02E10/547
摘要： An avalanche photodiode with a defect-assisted silicon absorption region. An example includes a substrate; a layer of silicon on the substrate, the layer of silicon including a positively-doped region, a negatively-doped region, and an absorption region between the positively-doped and negatively-doped regions, the absorption region including defects in its crystal structure; and contacts in electrical communication with the positively-doped and negatively-doped regions to receive a bias potential.
摘要翻译： 具有缺陷辅助硅吸收区域的雪崩光电二极管。 一个例子包括基底; 衬底上的硅层，包含正掺杂区域的硅层，负掺杂区域和正掺杂区域和负掺杂区域之间的吸收区域，所述吸收区域包括其晶体结构的缺陷; 以及与正掺杂区域和负掺杂区域电连通的接触以接收偏置电位。
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公开(公告)号：US09219184B2
公开(公告)日：2015-12-22
申请号：US14396419
申请日：2012-07-25
IPC分类号： H01L31/07 , H01L31/107 , H01L31/028 , H01L31/02 , H01L31/0224 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/107 , G02B2006/12061 , H01L31/02027 , H01L31/022416 , H01L31/02325 , H01L31/028 , H01L31/03529 , H01L31/1075 , H01L31/1804 , Y02E10/547
摘要： An avalanche photodiode with a defect-assisted silicon absorption region. An example includes a substrate; a layer of silicon on the substrate, the layer of silicon including a positively-doped region, a negatively-doped region, and an absorption region between the positively-doped and negatively-doped regions, the absorption region including defects in its crystal structure; and contacts in electrical communication with the positively-doped and negatively-doped regions to receive a bias potential.
摘要翻译： 具有缺陷辅助硅吸收区域的雪崩光电二极管。 一个例子包括基底; 衬底上的硅层，包含正掺杂区域的硅层，负掺杂区域和正掺杂区域和负掺杂区域之间的吸收区域，所述吸收区域包括其晶体结构的缺陷; 以及与正掺杂区域和负掺杂区域电连通的接触以接收偏置电位。
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公开(公告)号：US08817254B2
公开(公告)日：2014-08-26
申请号：US13284536
申请日：2011-10-28
申请人： Charles M. Santori , Kai-Mei Fu , Andrei Faraon , Victor M. Acosta , Zhihong Huang , Raymond G. Beausoleil
发明人： Charles M. Santori , Kai-Mei Fu , Andrei Faraon , Victor M. Acosta , Zhihong Huang , Raymond G. Beausoleil
CPC分类号： G06N99/002 , B82Y10/00
摘要： A process for entangling quantum states of respective quantum systems measures electromagnetic radiation emitted from a first system and from a second system. The two systems are exposed to excitation radiation having a probability per time of producing a photon, and an interference element is coupled to receive photons from the first and second systems. The process further includes measuring a time during which the first and second systems were exposed to the excitation radiation before a photon is detected on either output channel of the interference element and applying an electromagnetic pulse that causes a relative phase shift of a portion of a quantum state of the first and second systems. Parameters of the electromagnetic pulse are selected based on measurements of the electromagnetic radiation from the first and second systems and the time measured.
摘要翻译： 用于纠缠相应量子系统的量子态的过程测量从第一系统和第二系统发射的电磁辐射。 两个系统暴露于具有产生光子的时间概率的激发辐射，并且耦合干涉元件以接收来自第一和第二系统的光子。 该过程还包括测量在干扰元件的任一输出通道上检测到光子之前第一和第二系统暴露于激发辐射的时间，并且施加电磁脉冲，该电磁脉冲引起量子的一部分的相对相移 第一和第二系统的状态。 基于来自第一和第二系统的电磁辐射的测量和测量的时间来选择电磁脉冲的参数。
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公开(公告)号：US20130107352A1
公开(公告)日：2013-05-02
申请号：US13284262
申请日：2011-10-28
申请人： Charles M. Santori , Andrei Faraon , Kai-Mei Fu , Victor M. Acosta , Zhihong Huang , Lars H. Thylen , Raymond G. Beausoleil
发明人： Charles M. Santori , Andrei Faraon , Kai-Mei Fu , Victor M. Acosta , Zhihong Huang , Lars H. Thylen , Raymond G. Beausoleil
IPC分类号： H01S3/05
CPC分类号： G06N99/002 , B82Y10/00
摘要： A quantum device includes a resonator and a tuning structure. The tuning structure is made a material such as a chalcogenide and is positioned to interact with the electromagnetic radiation in the resonator so that a resonant mode of the first resonator depends on a characteristic of the tuning structure. The resonator is optically coupled so that a transition between quantum states associated with a defect produces electromagnetic radiation in the resonator. The characteristic of the tuning structure is adjustable after fabrication of the resonator and the tuning structure.
摘要翻译： 量子器件包括谐振器和调谐结构。 调谐结构被制成诸如硫族化物的材料，并被定位成与谐振器中的电磁辐射相互作用，使得第一谐振器的谐振模式取决于调谐结构的特性。 谐振器被光学耦合，使得与缺陷相关联的量子态之间的转变在谐振器中产生电磁辐射。 调谐结构的特性在谐振器和调谐结构制造之后是可调节的。
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公开(公告)号：US08837544B2
公开(公告)日：2014-09-16
申请号：US13284262
申请日：2011-10-28
申请人： Charles M. Santori , Andrei Faraon , Kai-Mei Fu , Victor M. Acosta , Zhihong Huang , Lars H. Thylen , Raymond G. Beausoleil
发明人： Charles M. Santori , Andrei Faraon , Kai-Mei Fu , Victor M. Acosta , Zhihong Huang , Lars H. Thylen , Raymond G. Beausoleil
CPC分类号： G06N99/002 , B82Y10/00
摘要： A quantum device includes a resonator and a tuning structure. The tuning structure is made a material such as a chalcogenide and is positioned to interact with the electromagnetic radiation in the resonator so that a resonant mode of the first resonator depends on a characteristic of the tuning structure. The resonator is optically coupled so that a transition between quantum states associated with a defect produces electromagnetic radiation in the resonator. The characteristic of the tuning structure is adjustable after fabrication of the resonator and the tuning structure.
摘要翻译： 量子器件包括谐振器和调谐结构。 调谐结构被制成诸如硫族化物的材料，并被定位成与谐振器中的电磁辐射相互作用，使得第一谐振器的谐振模式取决于调谐结构的特性。 谐振器被光学耦合，使得与缺陷相关联的量子态之间的转变在谐振器中产生电磁辐射。 调谐结构的特性在谐振器和调谐结构制造之后是可调节的。
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公开(公告)号：US20130107253A1
公开(公告)日：2013-05-02
申请号：US13284536
申请日：2011-10-28
申请人： Charles M. Santori , Kai-Mei Fu , Andrei Faraon , Victor M. Acosta , Zhihong Huang , Raymond G. Beausoleil
发明人： Charles M. Santori , Kai-Mei Fu , Andrei Faraon , Victor M. Acosta , Zhihong Huang , Raymond G. Beausoleil
IPC分类号： G01N21/65
CPC分类号： G06N99/002 , B82Y10/00
摘要： A process for entangling quantum states of respective quantum systems measures electromagnetic radiation emitted from a first system and from a second system. The two systems are exposed to excitation radiation having a probability per time of producing a photon, and an interference element is coupled to receive photons from the first and second systems. The process further includes measuring a time during which the first and second systems were exposed to the excitation radiation before a photon is detected on either output channel of the interference element and applying an electromagnetic pulse that causes a relative phase shift of a portion of a quantum state of the first and second systems. Parameters of the electromagnetic pulse are selected based on measurements of the electromagnetic radiation from the first and second systems and the time measured.
摘要翻译： 用于纠缠相应量子系统的量子态的过程测量从第一系统和第二系统发射的电磁辐射。 两个系统暴露于具有产生光子的时间概率的激发辐射，并且耦合干涉元件以接收来自第一和第二系统的光子。 该过程还包括测量在干扰元件的任一输出通道上检测到光子之前第一和第二系统暴露于激发辐射的时间，并且施加电磁脉冲，该电磁脉冲引起量子的一部分的相对相移 第一和第二系统的状态。 基于来自第一和第二系统的电磁辐射的测量和测量的时间来选择电磁脉冲的参数。
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公开(公告)号：US06181951B2
公开(公告)日：2001-01-30
申请号：US09382861
申请日：1999-08-25
IPC分类号： H04Q734
摘要： An adapter/converter circuit converts transmissions by a mobile telephone built for one standard (e.g., PCS) from the telephone transmit/base station receive frequency of that one standard to the telephone transmit/base station receive frequency of another standard (e.g., cellular), and converts transmissions by a base station or similar device (e.g., a base station simulator) from the telephone receive/base station transmit frequency of the one standard to the telephone receive/base station transmit frequency of the other standard. The two frequency conversions occur simultaneously on two parallel legs under the control of a PLL dual frequency synthesizer, which is in turn controlled by user input (in the case where the adapter is used to allow, e.g., PCS telephones to be tested on cellular test equipment) or by the base station (in the case where the adapter is used to allow, e.g., PCS telephones to be used with a cellular base station).
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公开(公告)号：US20190238097A1
公开(公告)日：2019-08-01
申请号：US15768874
申请日：2015-10-26
申请人： Cheng Li , Zhihong Huang
发明人： Cheng Li , Zhihong Huang
CPC分类号： H03F1/086 , H03F1/22 , H03F1/347 , H03F3/082 , H03F3/72 , H04B10/116 , H04B10/693
摘要： One embodiment describes a transimpedance amplifier (TIA) system. The system includes a transistor arranged between an input node and an output node to set an amplitude of an output voltage at the output node based on an amplitude of an input current signal provided at the input node. The system also includes a negative feedback transformer coupled to the transistor to provide a negative feedback gain with respect to the output voltage to substantially increase transconductance of the transistor.
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