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    Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same
    3.
    发明授权
    Perpendicular magnetic recording media with improved crystallographic orientations and method of manufacturing same 有权
    具有改善晶体取向的垂直磁记录介质及其制造方法

    公开(公告)号：US07175925B2

    公开(公告)日：2007-02-13

    申请号：US10663670

    申请日：2003-09-17

    申请人： Qixu David Chen ,  Thomas P. Nolan ,  Zhong Stella Wu ,  Samuel Dacke Harkness, IV ,  Rajiv Yadav Ranjan

    发明人： Qixu David Chen ,  Thomas P. Nolan ,  Zhong Stella Wu ,  Samuel Dacke Harkness, IV ,  Rajiv Yadav Ranjan

    IPC分类号： G11B5/66 ,  G11B5/70

    CPC分类号： G11B5/732 ,  G11B5/667 ,  G11B2005/0029

    摘要： A perpendicular magnetic recording medium, comprising: (a) a non-magnetic substrate having a surface; and (b) a layer stack formed over the substrate surface, comprising in overlying sequence from the substrate surface: (i) a magnetically soft underlayer; (ii) an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material formed thereon; and (iii) at least one crystallographically oriented magnetically hard perpendicular recording layer; wherein the magnetically soft underlayer is sputter-deposited at a sufficiently large target-to-substrate spacing and at a sufficiently low gas pressure selected to provide the underlayer with a smooth surface having a low average surface roughness Ra below about 0.3 nm, as measured by Atomic Force Microscopy (AFM).

    摘要翻译： 一种垂直磁记录介质，包括：（a）具有表面的非磁性基板; 和（b）形成在所述衬底表面上的层叠层，包括从所述衬底表面的重叠顺序：（i）磁软底层; （ii）用于晶体取向形成在其上的垂直磁记录材料层的层间结构; 和（iii）至少一个晶体取向的磁性硬垂直记录层; 其中所述磁软底层被溅射沉积在足够大的靶对衬底间隔处并且以足够低的气体压力被选择以使底层具有平均表面，其具有低于约0.3nm的低平均表面粗糙度Ra，如通过 原子力显微镜（AFM）。

    Magnetic recording media with a nialox sub-seedlayer
    4.
    发明授权
    Magnetic recording media with a nialox sub-seedlayer 失效
    具有nialox子种子层的磁记录介质

    公开(公告)号：US06346339B1

    公开(公告)日：2002-02-12

    申请号：US09379505

    申请日：1999-08-23

    申请人： Samuel Dacke Harkness, IV ,  Qixu (David) Chen ,  Zhong (Stella) Wu ,  Rajiv Yadav Ranjan

    发明人： Samuel Dacke Harkness, IV ,  Qixu (David) Chen ,  Zhong (Stella) Wu ,  Rajiv Yadav Ranjan

    IPC分类号： G11B566

    CPC分类号： G11B5/732 ,  C23C14/024 ,  G11B5/656 ,  G11B5/66 ,  G11B5/7325 ,  G11B5/8404

    摘要： Magnetic recording media exhibiting enhanced SMNR are formed with an NiAlOx sub-seedlayer for microstructural control of the underlayer to enable deposition and growth of a magnetic layer exhibiting a (10{overscore (1)}0)-predominant crystallographic orientation and small, uniform grain size. Embodiments include completely reactive sputter depositing a NiAlOx sub-seedlayer on a glass-ceramic substrate and sequentially depositing thereon a NiAl seedlayer, a Cr or Cr-alloy underlayer, e.g., CrMo, a Co—Cr magnetic layer and a protective overcoat, e.g., carbon. The resulting magnetic recording media exhibit a high SMNR, high OW, narrow PW50, improved jitter and improved Hr.

    摘要翻译： 用NiAlOx亚子层形成表现出增强的SMNR的磁记录介质，用于底层的微结构控制，以使得能够沉积和生长表现出（10（超核（1）} 0） - 优势晶体取向的磁性层和小的均匀晶粒 尺寸。 实施例包括在玻璃 - 陶瓷衬底上完全反应性溅射沉积NiAlO x子种子层并且依次在其上沉积NiAl种子层，Cr或Cr-合金底层，例如CrMo，Co-Cr磁性层和保护性外涂层， 碳。 所得到的磁记录介质表现出高SMNR，高OW，窄PW50，改善的抖动和改善的Hr。

    High density magnetic recording medium with high Hr and low Mrt
    6.
    发明授权
    High density magnetic recording medium with high Hr and low Mrt 有权
    高密度，低密度磁记录介质

    公开(公告)号：US6156422A

    公开(公告)日：2000-12-05

    申请号：US188678

    申请日：1998-11-10

    申请人： Zhong (Stella) Wu ,  Rajiv Yadav Ranjan

    发明人： Zhong (Stella) Wu ,  Rajiv Yadav Ranjan

    IPC分类号： G11B5/73 ,  G11B5/66

    CPC分类号： G11B5/732 ,  G11B5/7325 ,  Y10S428/90 ,  Y10T428/26 ,  Y10T428/265

    摘要： A magnetic recording medium exhibiting high in-plane anisotropy at low Mrt is formed employing a NiAl seedlayer and a CrMn underlayer thereon. Embodiments include magnetic recording media with a CoCrPtTa magnetic alloy layer exhibiting a Hr greater than 2800 Oe with a Mrt no greater than 0.5 memu/cm.sup.2. The resulting media also exhibit high S* and low media noise.

    摘要翻译： 在低Mrt处表现出高的面内各向异性的磁记录介质使用NiAl种层和CrMn底层在其上形成。 实施方案包括具有表现出大于2800Oe的Hr的CoCrPtTa磁性合金层的磁记录介质，Mrt不大于0.5 memu / cm 2。 所得到的介质也表现出高S *和低介质噪声。

    Magnetic random access memory with field compensating layer and multi-level cell
    7.
    发明授权
    Magnetic random access memory with field compensating layer and multi-level cell 有权
    具有场补偿层和多级单元的磁随机存取存储器

    公开(公告)号：US08598576B2

    公开(公告)日：2013-12-03

    申请号：US13029054

    申请日：2011-02-16

    申请人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

    发明人： Yuchen Zhou ,  Yiming Huai ,  Rajiv Yadav Ranjan

    IPC分类号： H01L29/82 ,  H01L21/8246

    CPC分类号： H01L29/66984 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

    摘要： A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed on top of the reference layer and a free layer is formed on top of the junction layer with a perpendicular magnetic orientation, at substantially its center of the free layer and switchable. A spacer layer is formed on top of the free layer and a fixed layer is formed on top of the spacer layer, the fixed layer has a fixed perpendicular magnetic component opposite to that of the reference layer. The magnetic orientation of the free layer switches relative to that of the fixed layer. The perpendicular magnetic components of the fixed layer and the reference layer substantially cancel each other and the free layer has an in-plane edge magnetization field.

    摘要翻译： 自旋转矩磁性随机存取存储器（STTMRAM）元件包括在基板上形成的具有固定的垂直磁性部件的参考层。 接合层形成在参考层的顶部，并且在接合层的顶部上以自由层的大致中心位置处具有垂直磁性取向形成自由层。 间隔层形成在自由层的顶部，固定层形成在间隔层的顶部，固定层具有与基准层相反的固定的垂直磁性部件。 自由层的磁性取向相对于固定层的磁性取向。 固定层和参考层的垂直磁性分量基本相互抵消，自由层具有面内边缘磁化场。

    MRAM fabrication method with sidewall cleaning
    8.
    发明授权
    MRAM fabrication method with sidewall cleaning 有权
    MRAM制造方法与侧壁清洁

    公开(公告)号：US08574928B2

    公开(公告)日：2013-11-05

    申请号：US13443818

    申请日：2012-04-10

    申请人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

    发明人： Kimihiro Satoh ,  Yiming Huai ,  Yuchen Zhou ,  Jing Zhang ,  Dong Ha Jung ,  Ebrahim Abedifard ,  Rajiv Yadav Ranjan ,  Parviz Keshtbod

    IPC分类号： H01L21/00

    CPC分类号： H01L27/222 ,  H01L43/12

    摘要： Fabrication methods for MRAM are described wherein any re-deposited metal on the sidewalls of the memory element pillars is cleaned before the interconnection process is begun. In embodiments the pillars are first fabricated, then a dielectric material is deposited on the pillars over the re-deposited metal on the sidewalls. The dielectric material substantially covers any exposed metal and therefore reduces sources of re-deposition during subsequent etching. Etching is then performed to remove the dielectric material from the top electrode and the sidewalls of the pillars down to at least the bottom edge of the barrier. The result is that the previously re-deposited metal that could result in an electrical short on the sidewalls of the barrier is removed. Various embodiments of the invention include ways of enhancing or optimizing the process. The bitline interconnection process proceeds after the sidewalls have been etched clean as described.

    摘要翻译： 描述了用于MRAM的制造方法，其中在互连过程开始之前清洁存储元件柱的侧壁上的任何重新沉积的金属。 在实施例中，首先制造柱，然后将介电材料沉积在侧壁上的再沉积金属上的柱上。 电介质材料基本上覆盖任何暴露的金属，因此在随后的蚀刻期间减少再沉积的来源。 然后进行蚀刻以将电介质材料从顶部电极和柱的侧壁向下移动到至少阻挡层的底部边缘。 结果是可能导致在屏障的侧壁上导致电短路的先前重新沉积的金属被去除。 本发明的各种实施方案包括增强或优化方法的方法。 如所描述的那样，在侧壁被蚀刻清洁之后，进行位线互连处理。

    METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY
    9.
    发明申请
    METHOD FOR MANUFACTURING HIGH DENSITY NON-VOLATILE MAGNETIC MEMORY 有权
    制造高密度非挥发性磁记忆的方法

    公开(公告)号：US20130244344A1

    公开(公告)日：2013-09-19

    申请号：US13610587

    申请日：2012-09-11

    申请人： Roger Klas Malmhall ,  Kimihiro Satoh ,  Jing Zhang ,  Parviz Keshtbod ,  Rajiv Yadav Ranjan

    发明人： Roger Klas Malmhall ,  Kimihiro Satoh ,  Jing Zhang ,  Parviz Keshtbod ,  Rajiv Yadav Ranjan

    IPC分类号： H01L43/12

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  H01L27/228

    摘要： Methods of fabricating MTJ arrays using two orthogonal line patterning steps are described. Embodiments are described that use a self-aligned double patterning method for one or both orthogonal line patterning steps to achieve dense arrays of MTJs with feature dimensions one half of the minimum photo lithography feature size (F). In one set of embodiments, the materials and thicknesses of the stack of layers that provide the masking function are selected so that after the initial set of mask pads have been patterned, a sequence of etching steps progressively transfers the mask pad shape through the multiple mask layer and down through all of the MTJ cell layers to the form the complete MTJ pillars. In another set of embodiments, the MTJ/BE stack is patterned into parallel lines before the top electrode layer is deposited.

    摘要翻译： 描述了使用两个正交线图案化步骤制造MTJ阵列的方法。 描述了使用用于一个或两个正交线图案化步骤的自对准双图案化方法来实现特征尺寸为最小光刻特征尺寸（F）的一半的MTJ的致密阵列的实施例。 在一组实施例中，选择提供掩模功能的层叠层的材料和厚度，使得在初始掩模焊盘组被图案化之后，一系列蚀刻步骤逐渐地将掩模焊盘形状传递通过多个掩模 通过所有的MTJ单元层的层和下层形成完整的MTJ柱。 在另一组实施例中，在沉积顶部电极层之前，将MTJ / BE叠层图案化成平行线。

    Non-volatile magnetic memory element with graded layer
    10.
    发明授权
    Non-volatile magnetic memory element with graded layer 有权
    带分级层的非易失性磁记忆元件

    公开(公告)号：US08488376B2

    公开(公告)日：2013-07-16

    申请号：US13476879

    申请日：2012-05-21

    申请人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    发明人： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Roger Klas Malmhall

    IPC分类号： G11C11/14

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/303 ,  H01L27/228 ,  H01L43/08

    摘要： A non-volatile magnetic memory element includes a number of layers one of which is a free layer which is graded. The graded free layer may include various elements with each element having a different anisotropy or it may include nonmagnetic compounds and magnetic regions with the non-magnetic compounds forming graded contents forming a unique shape such as cone shaped, diamond shaped or other shapes and whose thickness is based on the reactivity of the magnetic compound.

    摘要翻译： 非易失性磁存储元件包括多个层，其中之一是分级的自由层。 分级自由层可以包括各种元素，其中每个元素具有不同的各向异性，或者其可以包括非磁性化合物和磁性区域，其中非磁性化合物形成梯度含量形成独特的形状，例如锥形，菱形或其它形状，并且其厚度 是基于磁性化合物的反应性。