公开(公告)号：US20090288047A1

公开(公告)日：2009-11-19

申请号：US12509854

申请日：2009-07-27

申请人： Zong Wu Tang ,  Daniel N. Zhang ,  Juhwan Kim ,  Hua Song ,  Weiping Fang ,  Lawrence S. Melvin, III

发明人： Zong Wu Tang ,  Daniel N. Zhang ,  Juhwan Kim ,  Hua Song ,  Weiping Fang ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G05B2219/45031 ,  G06F2217/12 ,  Y02P90/265

摘要： One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

摘要翻译： 一个实施例提供了一种使用数据库来快速识别布局中的制造问题区域的系统。 在操作期间，系统接收第一检查图，其识别第一布局中的第一区域，其中第一区域与第一特征相关联。 接下来，系统使用第一检查图确定第一样本，其中第一样本表示第一检查图的第一范围内的第一布局的几何形状，其中预期第一样本的几何形状影响第一特征的形状 。 然后，系统使用第一样本执行基于模型的模拟，以获得第一模拟结果，其指示第一特征是否预期具有制造问题。 接下来，系统将第一模拟结果存储在用于快速确定第二特征是否期望具有制造问题的数据库中。

公开(公告)号：US07584450B2

公开(公告)日：2009-09-01

申请号：US11637424

申请日：2006-12-12

申请人： Zong Wu Tang ,  Daniel N. Zhang ,  Juhwan Kim ,  Hua Song ,  Weiping Fang ,  Lawrence S. Melvin, III

发明人： Zong Wu Tang ,  Daniel N. Zhang ,  Juhwan Kim ,  Hua Song ,  Weiping Fang ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G05B2219/45031 ,  G06F2217/12 ,  Y02P90/265

摘要： One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

摘要翻译： 一个实施例提供了一种使用数据库来快速识别布局中的制造问题区域的系统。 在操作期间，系统接收第一检查图，其识别第一布局中的第一区域，其中第一区域与第一特征相关联。 接下来，系统使用第一检查图确定第一样本，其中第一样本表示第一检查图的第一范围内的第一布局的几何形状，其中预期第一样本的几何形状影响第一特征的形状 。 然后，系统使用第一样本执行基于模型的模拟，以获得第一模拟结果，其指示第一特征是否预期具有制造问题。 接下来，系统将第一模拟结果存储在用于快速确定第二特征是否期望具有制造问题的数据库中。

公开(公告)号：US07934174B2

公开(公告)日：2011-04-26

申请号：US12509854

申请日：2009-07-27

申请人： Zong Wu Tang ,  Daniel N. Zhang ,  Juhwan Kim ,  Hua Song ,  Weiping Fang ,  Lawrence S. Melvin, III

发明人： Zong Wu Tang ,  Daniel N. Zhang ,  Juhwan Kim ,  Hua Song ,  Weiping Fang ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G05B2219/45031 ,  G06F2217/12 ,  Y02P90/265

摘要： One embodiment provides a system for using a database to quickly identify a manufacturing problem area in a layout. During operation, the system receives a first check-figure which identifies a first area in a first layout, wherein the first area is associated with a first feature. Next, the system determines a first sample using the first check-figure, wherein the first sample represents the first layout's geometry within a first ambit of the first check-figure, wherein the first sample's geometry is expected to affect the shape of the first feature. The system then performs a model-based simulation using the first sample to obtain a first simulation-result which indicates whether the first feature is expected to have manufacturing problems. Next, the system stores the first simulation-result in a database which is used to quickly determine whether a second feature is expected to have manufacturing problems.

摘要翻译： 一个实施例提供了一种使用数据库来快速识别布局中的制造问题区域的系统。 在操作期间，系统接收第一检查图，其识别第一布局中的第一区域，其中第一区域与第一特征相关联。 接下来，系统使用第一检查图确定第一样本，其中第一样本表示第一检查图的第一范围内的第一布局的几何形状，其中预期第一样本的几何形状影响第一特征的形状 。 然后，系统使用第一样本执行基于模型的模拟，以获得第一模拟结果，其指示第一特征是否预期具有制造问题。 接下来，系统将第一模拟结果存储在用于快速确定第二特征是否期望具有制造问题的数据库中。

公开(公告)号：US08184897B2

公开(公告)日：2012-05-22

申请号：US12244178

申请日：2008-10-02

申请人： Jianliang Li ,  Lawrence S. Melvin, III ,  Qiliang Yan

发明人： Jianliang Li ,  Lawrence S. Melvin, III ,  Qiliang Yan

IPC分类号： G06K9/00

CPC分类号： G03F7/70666 ,  G03F7/705

摘要： One embodiment of the present invention provides techniques and systems for determining modeling parameters for a photolithography process. During operation, the system can receive a layout. Next, the system can determine an iso-focal pattern in the layout. The system can then determine multiple aerial-image-intensity values in proximity to the iso-focal pattern by convolving the layout with multiple optical models, wherein the multiple optical models model the photolithography process's optical system under different focus conditions. Next, the system can determine a location in proximity to the iso-focal pattern where the aerial-image-intensity values are substantially insensitive to focus variations. The system can then use the location and the associated aerial-image-intensity values to determine an optical threshold and a resist bias. The optical threshold and the resist bias can then be used for modeling the photolithography process.

摘要翻译： 本发明的一个实施例提供了用于确定光刻工艺的建模参数的技术和系统。 在操作过程中，系统可以接收布局。 接下来，系统可以确定布局中的等焦点图案。 然后，系统可以通过使用多个光学模型卷积布局来确定邻近等焦线图案的多个空间图像强度值，其中多个光学模型在不同的聚焦条件下对光刻工艺的光学系统建模。 接下来，系统可以确定靠近等焦点图案的位置，其中空间图像强度值对聚焦变化基本上不敏感。 然后，系统可以使用位置和相关联的空中图像强度值来确定光学阈值和抗蚀剂偏压。 然后可以将光学阈值和抗蚀剂偏压用于对光刻工艺进行建模。

公开(公告)号：US08181128B2

公开(公告)日：2012-05-15

申请号：US12250391

申请日：2008-10-13

申请人： Jensheng Huang ,  Lawrence S. Melvin, III

发明人： Jensheng Huang ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50

CPC分类号： G03F1/70

摘要： One embodiment provides a system for determining a process model for a photolithography process. The photolithography process can use multiple exposure-and-development steps to create features on a wafer. When the photolithography process exposes the wafer to a layout, the wafer can include topography variations which were caused by previous exposure-and-development steps. The process model can be used to predict patterns that are created on the wafer when the wafer is exposed to a second layout, wherein the wafer includes topography variations that were caused by resist features that were created when the wafer was exposed to a first layout. The process model can include a first term and a second term, wherein the first term is convolved with a sum of the first layout and the second layout, and wherein the second term is convolved with the second layout.

摘要翻译： 一个实施例提供了一种用于确定光刻工艺的工艺模型的系统。 光刻工艺可以使用多个曝光和显影步骤来在晶片上产生特征。 当光刻工艺使晶片暴露于布局时，晶片可以包括由先前曝光和显影步骤引起的地形变化。 当晶片暴露于第二布局时，该过程模型可用于预测在晶片上产生的图案，其中晶片包括由晶片暴露于第一布局时产生的抗蚀剂特征引起的形貌变化。 过程模型可以包括第一项和第二项，其中第一项与第一布局和第二布局的和进行卷积，并且其中第二项与第二布局卷积。

公开(公告)号：US07788630B2

公开(公告)日：2010-08-31

申请号：US11726505

申请日：2007-03-21

申请人： Jianliang Li ,  Qilang Yan ,  Lawrence S. Melvin, III

发明人： Jianliang Li ,  Qilang Yan ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50 ,  G06F9/45 ,  G03F1/00

CPC分类号： G03F1/36

摘要： One embodiment provides a system that can enable a designer to determine the effects of subsequent processes at design time. During operation, the system may receive a test layout and an optical model that models an optical system, but which does not model the effects of subsequent processes, such as optical proximity correction (OPC). The system may generate a first dataset using the test layout and the optical model. Next, the system may apply OPC to the test layout, and generate a second dataset using the corrected test layout and the optical model. The system may then use the first dataset and the second dataset to adjust the optical model to obtain a second optical model that models the effects of subsequent processes.

摘要翻译： 一个实施例提供了一种能够使设计者在设计时确定后续处理的效果的系统。 在操作期间，系统可以接收测试布局和对光学系统进行建模但不对后续过程的影响进行建模的光学模型，例如光学邻近校正（OPC）。 系统可以使用测试布局和光学模型生成第一个数据集。 接下来，系统可以将OPC应用于测试布局，并使用校正的测试布局和光学模型生成第二数据集。 然后，系统可以使用第一数据集和第二数据集来调整光学模型以获得对随后过程的影响进行建模的第二光学模型。

公开(公告)号：US07727687B2

公开(公告)日：2010-06-01

申请号：US11454439

申请日：2006-06-15

申请人： Lawrence S. Melvin, III ,  Jensheng Huang ,  Martin Drapeau

发明人： Lawrence S. Melvin, III ,  Jensheng Huang ,  Martin Drapeau

IPC分类号： G03F9/00

CPC分类号： G03F7/70433 ,  G03F1/36 ,  G03F7/705

摘要： One embodiment of the present invention provides a system that determines whether a sub-resolution assist feature will print. During operation, the system receives a layout which contains a sub-resolution assist feature. Next, the system determines whether the sub-resolution assist feature will print using a process model and the layout. The process model is determined using first process data and second process data. The first process data is obtained using a first layout which is exposed using a first exposure level. The second process data is obtained using a second layout which is exposed using a second exposure level, which is different from the first exposure level. The second exposure level causes the sub-resolution assist features within the second layout to print.

摘要翻译： 本发明的一个实施例提供一种确定副分辨率辅助特征是否将被打印的系统。 在操作期间，系统接收包含子分辨率辅助功能的布局。 接下来，系统确定子分辨率辅助功能是否使用过程模型和布局进行打印。 使用第一过程数据和第二过程数据确定过程模型。 使用使用第一曝光水平曝光的第一布局获得第一处理数据。 使用与第一曝光水平不同的第二曝光水平曝光的第二布局获得第二处理数据。 第二曝光水平导致第二布局中的分辨率辅助功能打印。

公开(公告)号：US07721246B2

公开(公告)日：2010-05-18

申请号：US11584737

申请日：2006-10-19

申请人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III ,  Levi D. Barnes ,  Abani M. Biswas ,  Alakananda A. Biswas, legal representative

发明人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III ,  Levi D. Barnes ,  Abani M. Biswas

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G03F1/36 ,  G03F7/705

摘要： One embodiment of the present invention determines the effect of placing an assist feature at a location in a layout. During operation, the system receives a first value which was pre-computed by convolving a model with a layout at an evaluation point, wherein the model models semiconductor manufacturing processes. Next, the system determines a second value by convolving the model with an assist feature, which is assumed to be located at a first location which is in proximity to the evaluation point. The system then determines the effect of placing an assist feature using the first value and the second value. An embodiment of the present invention can be used to determine a substantially optimal location for placing an assist feature in a layout.

摘要翻译： 本发明的一个实施例确定了在布局中的位置放置辅助特征的效果。 在操作期间，系统接收通过在评估点卷积具有布局的模型而预先计算的第一值，其中模型对半导体制造过程进行建模。 接下来，系统通过将模型与辅助特征进行卷积来确定第二值，所述辅助特征被假设为位于靠近评估点的第一位置。 然后，系统使用第一值和第二值确定放置辅助特征的效果。 可以使用本发明的实施例来确定用于将辅助特征放置在布局中的基本最佳位置。

公开(公告)号：US07315999B2

公开(公告)日：2008-01-01

申请号：US11109533

申请日：2005-04-19

申请人： Lawrence S. Melvin, III ,  Benjamin D. Painter

发明人： Lawrence S. Melvin, III ,  Benjamin D. Painter

IPC分类号： G06F17/50 ,  G06F19/00 ,  G21K5/00 ,  G03F1/00

CPC分类号： G03F1/36

摘要： One embodiment of the present invention provides a system that identifies an area in a mask layout which is likely to cause manufacturing problems due to a missing or an improperly placed assist feature. During operation, the system receives an uncorrected or corrected mask layout. The system then dissects the mask layout into segments. Next, the system identifies a problem area associated with a segment using a process-sensitivity model which can be represented by a multidimensional function that captures process-sensitivity information. Note that identifying the problem area allows a new assist feature to be added or an existing assist feature to be adjusted, thereby improving the wafer manufacturability. Moreover, using the process-sensitivity model reduces the computational time required to identify the problem area.

摘要翻译： 本发明的一个实施例提供一种系统，其识别掩模布局中可能由于丢失或不正确放置的辅助特征引起制造问题的区域。 在操作期间，系统接收未校正或校正的掩模布局。 然后，系统将掩模布局剖析成段。 接下来，系统使用可以由捕获过程敏感性信息的多维函数表示的过程敏感度模型来识别与段相关联的问题区域。 请注意，识别问题区域允许添加新的辅助功能或调整现有的辅助功能，从而提高晶圆的可制造性。 此外，使用过程敏感性模型减少了识别问题区域所需的计算时间。

公开(公告)号：US07934176B2

公开(公告)日：2011-04-26

申请号：US12774522

申请日：2010-05-05

申请人： Jensheng Huang ,  Chun-chieh Kuo ,  Lawrence S. Melvin, III

发明人： Jensheng Huang ,  Chun-chieh Kuo ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50

CPC分类号： G03F7/70675 ,  G03F7/705 ,  G03F7/70666

摘要： An embodiment provides systems and techniques for determining a process model. During operation, the system may receive a first optical model which models a first optical system of a photolithography process. Next, the system may use the first optical model to determine a second optical model that models a second latent image that is formed by the first optical system at a second distance. The system may also use the first optical model to determine a third optical model that models a third latent image that is formed by the first optical system at a third distance. Next, the system may receive process data which is obtained by subjecting a test layout to the photolithography process. The system may then determine a process model using the first optical model, the second optical model, the third optical model, the test layout, and the process data.

摘要翻译： 实施例提供了用于确定过程模型的系统和技术。 在操作期间，系统可以接收对光刻工艺的第一光学系统建模的第一光学模型。 接下来，系统可以使用第一光学模型来确定在第二距离上对由第一光学系统形成的第二潜像建模的第二光学模型。 系统还可以使用第一光学模型来确定在第三距离上对由第一光学系统形成的第三潜像进行建模的第三光学模型。 接下来，系统可以接收通过对测试布局进行光刻处理而获得的处理数据。 然后，系统可以使用第一光学模型，第二光学模型，第三光学模型，测试布局和过程数据来确定过程模型。