公开(公告)号：US07721246B2

公开(公告)日：2010-05-18

申请号：US11584737

申请日：2006-10-19

申请人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III ,  Levi D. Barnes ,  Abani M. Biswas ,  Alakananda A. Biswas, legal representative

发明人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III ,  Levi D. Barnes ,  Abani M. Biswas

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G03F1/36 ,  G03F7/705

摘要： One embodiment of the present invention determines the effect of placing an assist feature at a location in a layout. During operation, the system receives a first value which was pre-computed by convolving a model with a layout at an evaluation point, wherein the model models semiconductor manufacturing processes. Next, the system determines a second value by convolving the model with an assist feature, which is assumed to be located at a first location which is in proximity to the evaluation point. The system then determines the effect of placing an assist feature using the first value and the second value. An embodiment of the present invention can be used to determine a substantially optimal location for placing an assist feature in a layout.

摘要翻译： 本发明的一个实施例确定了在布局中的位置放置辅助特征的效果。 在操作期间，系统接收通过在评估点卷积具有布局的模型而预先计算的第一值，其中模型对半导体制造过程进行建模。 接下来，系统通过将模型与辅助特征进行卷积来确定第二值，所述辅助特征被假设为位于靠近评估点的第一位置。 然后，系统使用第一值和第二值确定放置辅助特征的效果。 可以使用本发明的实施例来确定用于将辅助特征放置在布局中的基本最佳位置。

公开(公告)号：US08184897B2

公开(公告)日：2012-05-22

申请号：US12244178

申请日：2008-10-02

申请人： Jianliang Li ,  Lawrence S. Melvin, III ,  Qiliang Yan

发明人： Jianliang Li ,  Lawrence S. Melvin, III ,  Qiliang Yan

IPC分类号： G06K9/00

CPC分类号： G03F7/70666 ,  G03F7/705

摘要： One embodiment of the present invention provides techniques and systems for determining modeling parameters for a photolithography process. During operation, the system can receive a layout. Next, the system can determine an iso-focal pattern in the layout. The system can then determine multiple aerial-image-intensity values in proximity to the iso-focal pattern by convolving the layout with multiple optical models, wherein the multiple optical models model the photolithography process's optical system under different focus conditions. Next, the system can determine a location in proximity to the iso-focal pattern where the aerial-image-intensity values are substantially insensitive to focus variations. The system can then use the location and the associated aerial-image-intensity values to determine an optical threshold and a resist bias. The optical threshold and the resist bias can then be used for modeling the photolithography process.

摘要翻译： 本发明的一个实施例提供了用于确定光刻工艺的建模参数的技术和系统。 在操作过程中，系统可以接收布局。 接下来，系统可以确定布局中的等焦点图案。 然后，系统可以通过使用多个光学模型卷积布局来确定邻近等焦线图案的多个空间图像强度值，其中多个光学模型在不同的聚焦条件下对光刻工艺的光学系统建模。 接下来，系统可以确定靠近等焦点图案的位置，其中空间图像强度值对聚焦变化基本上不敏感。 然后，系统可以使用位置和相关联的空中图像强度值来确定光学阈值和抗蚀剂偏压。 然后可以将光学阈值和抗蚀剂偏压用于对光刻工艺进行建模。

公开(公告)号：US07933471B2

公开(公告)日：2011-04-26

申请号：US11716511

申请日：2007-03-09

申请人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III ,  James P. Shiely

发明人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III ,  James P. Shiely

IPC分类号： G06K9/00 ,  G06K9/36 ,  G06K9/64

CPC分类号： G02B27/0012 ,  G03F1/36

摘要： One embodiment of the present invention provides a system that reduces computational complexity in simulating an image resulting from an original mask and an optical transmission system. During operation, the system obtains a set transmission cross coefficient (TCC) kernel functions based on the optical transmission system, and obtains a set of transmission functions for a representative pattern which contains features representative of the original mask. The system constructs a new set of kernel functions based on the TCC kernel functions and the transmission functions for the representative pattern, wherein responses to the new kernel functions in a resulting image corresponding to the representative pattern are substantially uncorrelated with one another. The system further produces an intensity distribution of a resulting image corresponding to the original mask based on the new kernel functions, thereby facilitating prediction of a layout that can be produced from the original mask.

摘要翻译： 本发明的一个实施例提供一种降低模拟由原始掩模和光传输系统产生的图像的计算复杂性的系统。 在运行过程中，系统基于光传输系统获得设置的传输交叉系数（TCC）核函数，并获得一组代表性模式的传输函数，其中代表性模式包含代表原始掩码的特征。 该系统基于TCC内核功能和代表性模式的传输功能构建新的一组内核函数，其中对应于代表性模式的所得图像中对新内核功能的响应基本上彼此不相关。 该系统进一步基于新的内核函数产生对应于原始掩码的结果图像的强度分布，从而有助于预测可以从原始掩模产生的布局。

公开(公告)号：US07739645B2

公开(公告)日：2010-06-15

申请号：US11800171

申请日：2007-05-04

申请人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III

发明人： Jianliang Li ,  Qiliang Yan ,  Lawrence S. Melvin, III

IPC分类号： G06F17/50

CPC分类号： G06F17/5068 ,  G06F2217/10

摘要： One embodiment provides a system for determining an improved process model that models one or more semiconductor manufacturing processes. During operation, the system can receive a first process model. Next, the system can receive a 2-D-pattern detecting kernel which can detect 2-D patterns. The system can then receive a second set of empirical data which is associated with 2-D patterns in a test layout. Next, the system can determine an improved process model using the first process model, the 2-D-pattern detecting kernel, the test layout, and the second set of empirical data.

摘要翻译： 一个实施例提供了一种用于确定对一个或多个半导体制造工艺进行建模的改进的工艺模型的系统。 在运行过程中，系统可以接收第一个流程模型。 接下来，系统可以接收可以检测2-D图案的2-D图案检测内核。 然后，系统可以接收与测试布局中的2-D模式相关联的第二组经验数据。 接下来，系统可以使用第一过程模型，2-D模式检测内核，测试布局和第二组经验数据来确定改进的过程模型。

公开(公告)号：US20100086196A1

公开(公告)日：2010-04-08

申请号：US12244178

申请日：2008-10-02

申请人： Jianliang Li ,  Lawrence S. Melvin III ,  Qiliang Yan

发明人： Jianliang Li ,  Lawrence S. Melvin III ,  Qiliang Yan

IPC分类号： G06K9/00

CPC分类号： G03F7/70666 ,  G03F7/705

摘要： One embodiment of the present invention provides techniques and systems for determining modeling parameters for a photolithography process. During operation, the system can receive a layout. Next, the system can determine an iso-focal pattern in the layout. The system can then determine multiple aerial-image-intensity values in proximity to the iso-focal pattern by convolving the layout with multiple optical models, wherein the multiple optical models model the photolithography process's optical system under different focus conditions. Next, the system can determine a location in proximity to the iso-focal pattern where the aerial-image-intensity values are substantially insensitive to focus variations. The system can then use the location and the associated aerial-image-intensity values to determine an optical threshold and a resist bias. The optical threshold and the resist bias can then be used for modeling the photolithography process.

摘要翻译： 本发明的一个实施例提供了用于确定光刻工艺的建模参数的技术和系统。 在操作过程中，系统可以接收布局。 接下来，系统可以确定布局中的等焦点图案。 然后，系统可以通过使用多个光学模型卷积布局来确定邻近等焦线图案的多个空间图像强度值，其中多个光学模型在不同的聚焦条件下对光刻工艺的光学系统建模。 接下来，系统可以确定靠近等焦点图案的位置，其中空间图像强度值对聚焦变化基本上不敏感。 然后，系统可以使用位置和相关联的空中图像强度值来确定光学阈值和抗蚀剂偏压。 然后可以将光学阈值和抗蚀剂偏压用于对光刻工艺进行建模。

公开(公告)号：US08296688B2

公开(公告)日：2012-10-23

申请号：US13094749

申请日：2011-04-26

申请人： Levi D. Barnes ,  Benjamin D. Painter ,  Qiliang Yan ,  Yongfa Fan ,  Jianliang Li ,  Amyn Poonawala

发明人： Levi D. Barnes ,  Benjamin D. Painter ,  Qiliang Yan ,  Yongfa Fan ,  Jianliang Li ,  Amyn Poonawala

IPC分类号： G06F17/50

CPC分类号： G03F1/70 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70641

摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.

摘要翻译： 本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。 在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。 然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。 接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示由于添加了对焦敏感成本函数而导致的对焦敏感成本函数的改变的二维（2D）映射 在后OPC掩模布局中的给定位置处的图案。 最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

公开(公告)号：US07954071B2

公开(公告)日：2011-05-31

申请号：US12263354

申请日：2008-10-31

申请人： Levi D. Barnes ,  Benjamin D. Painter ,  Qiliang Yan ,  Yongfa Fan ,  Jianliang Li ,  Amyn Poonawala

发明人： Levi D. Barnes ,  Benjamin D. Painter ,  Qiliang Yan ,  Yongfa Fan ,  Jianliang Li ,  Amyn Poonawala

IPC分类号： G06F17/50

CPC分类号： G03F1/70 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70641

摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.

摘要翻译： 本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。 在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。 然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。 注意，目标图案的轮廓基本上与多边形的集合的边缘重合。 接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示对焦点敏感成本函数的改变的二维（2D）映射，由于添加了 在后OPC掩模布局中的给定位置处的图案。 最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

公开(公告)号：US20110202891A1

公开(公告)日：2011-08-18

申请号：US13094749

申请日：2011-04-26

申请人： Levi D. Barnes ,  Benjamin D. Painter ,  Qiliang Yan ,  Yongfa Fan ,  Jianliang Li ,  Amyn Poonawala

发明人： Levi D. Barnes ,  Benjamin D. Painter ,  Qiliang Yan ,  Yongfa Fan ,  Jianliang Li ,  Amyn Poonawala

IPC分类号： G06F17/50

CPC分类号： G03F1/70 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70641

摘要： One embodiment of the present invention provides a system that determines an assist feature placement within a post-optical proximity correction (post-OPC) mask layout. During operation, the system receives a set of target patterns which represent a set of polygons in a pre-OPC mask layout. The system then constructs a focus-sensitive cost function based on the target patterns, wherein the focus-sensitive cost function represents an amount of movement of post-OPC contours of the target patterns in response to changes in focus condition of the lithography system. Note that the contours of the target patterns substantially coincide with the edges of set of the polygons. Next, the system computes a cost-covariance field (CCF field) based on the focus-sensitive cost function, wherein the CCF field is a two-dimensional (2D) map representing changes to the focus-sensitive cost function due to an addition of a pattern at a given location within the post-OPC mask layout. Finally, the system generates assist features for the post-OPC mask layout based on the CCF field.

摘要翻译： 本发明的一个实施例提供了一种系统，其确定后光学邻近校正（后OPC）掩模布局中的辅助特征放置。 在操作期间，系统接收一组目标图案，这些目标图案表示预OPC掩模布局中的一组多边形。 然后，系统基于目标图案构建对焦敏感的成本函数，其中焦点敏感成本函数表示响应于光刻系统的聚焦条件的变化的目标图案的OPC后轮廓的移动量。 注意，目标图案的轮廓基本上与多边形的集合的边缘重合。 接下来，系统基于焦点敏感成本函数计算成本协方差字段（CCF字段），其中CCF字段是表示由于添加了对焦敏感成本函数而导致的对焦敏感成本函数的改变的二维（2D）映射 在后OPC掩模布局中的给定位置处的图案。 最后，系统基于CCF字段生成后OPC掩模布局的辅助功能。

公开(公告)号：US07496880B2

公开(公告)日：2009-02-24

申请号：US11243306

申请日：2005-10-03

申请人： Lawrence S. Melvin, III ,  Qiliang Yan

发明人： Lawrence S. Melvin, III ,  Qiliang Yan

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F1/68

摘要： One embodiment of the present invention provides a system that assesses the quality of a process model. During operation, the system receives a mask layout and additionally receives a process model that models the effects of one or more semiconductor manufacturing processes on the mask layout. Next, the system computes a gradient of the process model with respect to a process model parameter. The system then computes a quality indicator at an evaluation point in the mask layout using the gradient of the process model and the mask layout. Next, the system assesses the quality of the process model using the quality indicator. In one embodiment, the system assesses the quality of the process model by comparing the quality indicator with a threshold.

摘要翻译： 本发明的一个实施例提供了一种评估过程模型的质量的系统。 在操作期间，系统接收掩模布局，并且另外接收对掩模布局中的一个或多个半导体制造工艺的影响进行建模的过程模型。 接下来，系统计算相对于过程模型参数的过程模型的梯度。 然后，系统使用过程模型和掩模布局的梯度在掩模布局中的评估点处计算质量指标。 接下来，系统使用质量指标来评估过程模型的质量。 在一个实施例中，系统通过将质量指标与阈值进行比较来评估过程模型的质量。

公开(公告)号：US07320119B2

公开(公告)日：2008-01-15

申请号：US11124328

申请日：2005-05-06

申请人： Lawrence S. Melvin, III ,  James P. Shiely ,  Qiliang Yan ,  Benjamin D. Painter

发明人： Lawrence S. Melvin, III ,  James P. Shiely ,  Qiliang Yan ,  Benjamin D. Painter

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/36 ,  G03F7/70433 ,  G03F7/705 ,  G06F2217/12 ,  Y02P90/265

摘要： One embodiment of the present invention provides a system that identifies a problem edge in a mask layout which is likely to have manufacturing problems. During operation, the system creates an on-target process model that models a semiconductor manufacturing process under nominal process conditions. The system also creates one or more off-target process models that model the semiconductor manufacturing process under one or more process conditions that are different from nominal process conditions. Next, the system computes a process-sensitivity model using the on-target process model and the off-target process models. The system then computes an edge-detecting process-sensitivity model by convolving the process-sensitivity model with an edge-detecting function which can be used to detect edges in an image. Next, the system identifies a problem edge in the mask layout using the edge-detecting process-sensitivity model.

摘要翻译： 本发明的一个实施例提供一种识别可能具有制造问题的掩模布局中的问题边缘的系统。 在运行期间，系统创建一个目标过程模型，在标称工艺条件下对半导体制造工艺进行建模。 该系统还创建一个或多个偏离目标的过程模型，其在与标称工艺条件不同的一个或多个工艺条件下对半导体制造工艺进行建模。 接下来，系统使用目标过程模型和离靶过程模型来计算过程敏感度模型。 然后，该系统通过使用可用于检测图像中的边缘的边缘检测功能来卷积过程敏感度模型来计算边缘检测过程敏感性模型。 接下来，系统使用边缘检测过程敏感度模型识别掩模布局中的问题边缘。