中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

41 records (took 0.034 seconds)

    Integrated RF front end with stacked transistor switch
    1.
    发明授权
    Integrated RF front end with stacked transistor switch 有权

    公开(公告)号：US11588513B2

    公开(公告)日：2023-02-21

    申请号：US17375861

    申请日：2021-07-14

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  James S. Cable

    IPC: H04B1/48 ,  H03G11/00 ,  H01B1/04 ,  H04B1/00 ,  H03F1/02 ,  H01L27/02 ,  H03F3/21 ,  H03F1/56 ,  H01Q23/00 ,  H03G3/30 ,  H04B1/04 ,  H03F1/22 ,  H03F3/189 ,  H03F3/217 ,  H03F3/68 ,  H04L27/04 ,  H03F3/19

    Abstract: A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

    Integrated RF front end with stacked transistor switch
    2.
    发明授权
    Integrated RF front end with stacked transistor switch 有权

    公开(公告)号：US11070244B2

    公开(公告)日：2021-07-20

    申请号：US16891519

    申请日：2020-06-03

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  James S. Cable

    IPC: H04B1/48 ,  H03G11/00 ,  H01B1/04 ,  H04B1/00 ,  H03F1/02 ,  H01L27/02 ,  H03F3/21 ,  H03F1/56 ,  H01Q23/00 ,  H03G3/30 ,  H04B1/04 ,  H04L27/04 ,  H03F3/19

    Abstract: A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

    Integrated RF front end with stacked transistor switch
    3.
    发明授权
    Integrated RF front end with stacked transistor switch 有权

    公开(公告)号：US10715200B2

    公开(公告)日：2020-07-14

    申请号：US16515967

    申请日：2019-07-18

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  James S. Cable

    IPC: H04B1/00 ,  H03F1/56 ,  H04B1/48 ,  H01Q23/00 ,  H03G3/30 ,  H03G11/00 ,  H04B1/04 ,  H04L27/04 ,  H03F1/02 ,  H01L27/02 ,  H03F3/19 ,  H03F3/21

    Abstract: A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF front end or transceiver elements for a portable communication device, including a power amplifier (PA), a matching, coupling and filtering network, and an antenna switch to couple the conditioned PA signal to an antenna. An output signal sensor senses at least a voltage amplitude of the signal switched by the antenna switch, and signals a PA control circuit to limit PA output power in response to excessive values of sensed output. Stacks of multiple FETs in series to operate as a switching device may be used for implementation of the RF front end, and the method and apparatus of such stacks are claimed as subcombinations. An iClass PA architecture is described that dissipatively terminates unwanted harmonics of the PA output signal. A preferred embodiment of the RF transceiver IC includes two distinct PA circuits, two distinct receive signal amplifier circuits, and a four-way antenna switch to selectably couple a single antenna connection to any one of the four circuits.

    Low noise charge pump method and apparatus
    5.
    发明授权
    Low noise charge pump method and apparatus 有权

    公开(公告)号：US10148255B2

    公开(公告)日：2018-12-04

    申请号：US14883525

    申请日：2015-10-14

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  Dylan J. Kelly ,  James S. Cable

    IPC: H02M3/18 ,  G05F3/16 ,  H03B5/00 ,  H03K3/013 ,  H02M3/07 ,  H03K3/03

    Abstract: A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

    Switch circuit and method of switching radio frequency signals
    6.
    发明授权
    Switch circuit and method of switching radio frequency signals 有权

    公开(公告)号：US11206017B2

    公开(公告)日：2021-12-21

    申请号：US16930215

    申请日：2020-07-15

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  James S. Cable ,  Robert H. Benton

    IPC: H03K17/687 ,  H01P1/15 ,  H03K17/06 ,  H03K17/10 ,  H03K19/0185 ,  H03K19/0944 ,  H04B1/40 ,  H03K17/693 ,  H03K17/08

    Abstract: A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

    SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS
    7.
    发明申请
    SWITCH CIRCUIT AND METHOD OF SWITCHING RADIO FREQUENCY SIGNALS 审中-公开

    公开(公告)号：US20200076427A1

    公开(公告)日：2020-03-05

    申请号：US16676350

    申请日：2019-11-06

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  James S. Cable ,  Robert H. Benton

    IPC: H03K17/687 ,  H01P1/15 ,  H03K17/06 ,  H03K17/10 ,  H03K17/693 ,  H03K19/0185 ,  H03K19/0944 ,  H04B1/40

    Abstract: A novel RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.

    Integrated Circuits with Components on Both Sides of a Selected Substrate And Methods of Fabrication
    8.
    发明申请
    Integrated Circuits with Components on Both Sides of a Selected Substrate And Methods of Fabrication 审中-公开

    公开(公告)号：US20190115367A1

    公开(公告)日：2019-04-18

    申请号：US15948939

    申请日：2018-04-09

    Applicant: pSemi Corporation

    Inventor： James S. Cable ,  Anthony Mark Miscione ,  Ronald Eugene Reedy

    IPC: H01L27/12 ,  H01L21/78 ,  H01L27/06

    Abstract: Novel integrated circuits (SOI ICs), and methods for making and mounting the ICs are disclosed. In one embodiment, an IC comprises a first circuit layer of the IC formed from an active layer of an SOI wafer. The first circuit layer is coupled to a first surface of buffer layer, and a second surface of the buffer layer is coupled to a selected substrate comprising an insulating material. The selected substrate may be selected, without limitation, from the following types: sapphire, quartz, silicon dioxide glass, piezoelectric materials, and ceramics. A second circuit layer of the IC are formed, coupled to a second surface of the selected substrate. In one embodiment of a mounted IC, the first circuit layer is coupled to contact pads on a package substrate via solder bumps or copper pillars. The second circuit layer is coupled to contact pads on the package substrate via wire bonds.

    Low Noise Charge Pump Method and Apparatus
    9.
    发明申请
    Low Noise Charge Pump Method and Apparatus 审中-公开

    公开(公告)号：US20190097612A1

    公开(公告)日：2019-03-28

    申请号：US16169831

    申请日：2018-10-24

    Applicant: pSemi Corporation

    Inventor： Mark L. Burgener ,  Dylan J. Kelly ,  James S. Cable

    IPC: H03K3/013 ,  H02M3/07 ,  H03K3/03

    Abstract: A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increasing a control node AC impedance of certain transfer capacitor coupling switches. A single-phase clock may be used to control as many as all active switches within a charge pump, and capacitive coupling may simplify biasing and timing for clock signals controlling transfer capacitor coupling switches. Any combination of such aspects of the method or apparatus may be employed to quiet and/or simplify charge pump designs over a wide range of charge pump architectures.

Patent Agency Ranking