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1.发明授权Methods of operating an imaging pixel to accumulate charge from a photocurrent 有权操作成像像素以从光电流累积电荷的方法公开(公告)号：US08586907B2
公开(公告)日：2013-11-19
申请号：US13212271
申请日：2011-08-18
申请人： Bryan D. Ackland
发明人： Bryan D. Ackland
CPC分类号： H04N5/3742 , H04N5/3559 , H04N5/3745
摘要： An improved CMOS pixel with a combination of analog and digital readouts to provide a large pixel dynamic range without compromising low-light performance using a comparator to test the value of an accumulated charge at a series of exponentially increasing exposure times. The test is used to stop the integration of photocurrent once the accumulated analog voltage has reached a predetermined threshold. A one-bit output value of the test is read out of the pixel (digitally) at each of the exponentially increasing exposure periods. At the end of the integration period, the analog value stored on the integration capacitor is read out using conventional CMOS active pixel readout circuits.
摘要翻译： 具有模拟和数字读数组合的改进的CMOS像素，以提供大的像素动态范围，而不会在使用比较器的低亮度性能的情况下以一系列指数增长的曝光时间来测试累积电荷的值。 一旦累积的模拟电压达到预定阈值，该测试用于停止光电流的积分。 在每个指数增长的曝光周期中，从像素（数字地）读出测试的一位输出值。 在积分周期结束时，使用常规CMOS有源像素读出电路读出存储在积分电容器上的模拟值。
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公开(公告)号：US08686365B2
公开(公告)日：2014-04-01
申请号：US12510109
申请日：2009-07-27
申请人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
发明人： Conor S. Rafferty , Anders Ingvar Aberg , Tirunelveli Subramaniam Sriram , Bryan D. Ackland , Clifford A. King
IPC分类号： G01J5/02 , H01L31/0232
CPC分类号： H01L27/14627 , G01J3/02 , G01J3/0294 , G01J3/51 , G01J3/513 , H01L27/14621 , H01L27/14629 , H01L27/14632 , H01L27/14636 , H01L27/14647 , H01L27/14685
摘要： Optical imaging structures and methods are disclosed. One structure may be implemented as an imaging pixel having multiple photodetectors. The photodetectors may detect different wavelengths of incident radiation, and may be operated simultaneously or at separate times. An imager may include an imaging array of pixels of the type described. Methods of operating such structures are also described.
摘要翻译： 公开了光学成像结构和方法。 一个结构可以被实现为具有多个光电检测器的成像像素。 光电检测器可以检测入射辐射的不同波长，并且可以同时或在不同的时间运行。 成像器可以包括所述类型的像素的成像阵列。 还描述了操作这种结构的方法。
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公开(公告)号：US08063422B2
公开(公告)日：2011-11-22
申请号：US12109846
申请日：2008-04-25
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14612
摘要： MOS imaging pixels are described. The MOS imaging pixels may comprise bootstrapped source followers, having their bodies connected to their sources. The source followers of the MOS imaging pixels may be used to buffer a signal indicative of an amount of radiation incident on the pixel. MOS imagers are also described, which may comprise one or more MOS imaging pixels of the type described.
摘要翻译： 描述了MOS成像像素。 MOS成像像素可以包括引导源跟随器，其主体连接到它们的源。 可以使用MOS成像像素的源跟随器来缓冲表示入射在像素上的辐射量的信号。 还描述了MOS成像器，其可以包括所描述类型的一个或多个MOS成像像素。
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4.发明申请IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY 有权包含与硅衬底和硅电路集成的隔离锗光电子的图像传感器公开(公告)号：US20140225214A1
公开(公告)日：2014-08-14
申请号：US14195590
申请日：2014-03-03
申请人： Infrared Newco, Inc.
IPC分类号： H01L27/146
CPC分类号： H01L27/14634 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L27/14632 , H01L27/14643 , H01L27/14649 , H01L31/028 , H01L2924/351
摘要： In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.
摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件的阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。
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5.发明授权Image sensor comprising isolated germanium photodetectors integrated with a silicon substrate and silicon circuitry 有权图像传感器包括与硅衬底和硅电路集成的孤立的锗光电探测器公开(公告)号：US08664739B2
公开(公告)日：2014-03-04
申请号：US13116411
申请日：2011-05-26
IPC分类号： H01L31/00 , H01L31/06 , H01L29/732 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14634 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L27/14632 , H01L27/14643 , H01L27/14649 , H01L31/028 , H01L2924/351
摘要： In accordance with the invention, an improved image sensor includes an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers.
摘要翻译： 根据本发明，改进的图像传感器包括与硅衬底集成并与硅读出电路集成的锗感光元件阵列。 首先使用公知的硅晶片制造技术在硅衬底上形成硅晶体管。 随后通过外延生长将锗元素覆盖在硅上。 有利地，锗元素在电介质包层的表面开口内生长。 将晶片制造技术应用于元件以形成分离的锗光电二极管。 由于锗处理所需的温度低于硅处理所需的温度，锗器件的形成不必影响先前形成的硅器件。 然后沉积和图案化绝缘和金属层以互连硅器件并将锗器件连接到硅电路。 因此，锗元素通过外延生长与硅集成到一起，并通过公共金属层与硅电路集成。
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公开(公告)号：US20140042304A1
公开(公告)日：2014-02-13
申请号：US14060099
申请日：2013-10-22
申请人： Infrared Newco, Inc.
发明人： Bryan D. Ackland
IPC分类号： H04N5/374
CPC分类号： H04N5/3742 , H04N5/3559 , H04N5/3745
摘要： An improved CMOS pixel with a combination of analog and digital readouts to provide a large pixel dynamic range without compromising low-light performance using a comparator to test the value of an accumulated charge at a series of exponentially increasing exposure times. The rest is used to stop the integration of photocurrent once the accumulated analog voltage has reached a predetermined threshold. A one-bit output value of the test is read out of the pixel (digitally) at each of the exponentially increasing exposure periods. At the end of the integration period, the analog value stored on the integration capacitor is read out using conventional CMOS active pixel readout circuits.
摘要翻译： 具有模拟和数字读数组合的改进的CMOS像素，以提供大的像素动态范围，而不会在使用比较器的低亮度性能的情况下以一系列指数增长的曝光时间来测试累积电荷的值。 其余的用于一旦累积的模拟电压达到预定阈值就停止光电流的积分。 在每个指数增长的曝光周期中，从像素（数字地）读出测试的一位输出值。 在积分周期结束时，使用常规CMOS有源像素读出电路读出存储在积分电容器上的模拟值。
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公开(公告)号：US20120217376A1
公开(公告)日：2012-08-30
申请号：US13463007
申请日：2012-05-03
IPC分类号： H01L27/146 , H01L31/00
CPC分类号： H04N5/3575 , H04N5/3745
摘要： Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.
摘要翻译： 提供了用于在像素的单个积分周期期间对成像像素执行多个相关双采样（CDS）操作，并且在一些情况下在成像像素阵列上执行的方法和装置。 多个CDS操作可以产生多个CDS值，其可以组合处理以产生基本上不含各种类型的噪声的结果值。 可以使用包括具有输入电容器的单端电荷放大器的CDS电路来执行CDS操作。 电荷放大器还可以包括提供可变增益的可变电容。 可变电容可由反馈电容器提供。
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公开(公告)号：US20120025082A1
公开(公告)日：2012-02-02
申请号：US13230715
申请日：2011-09-12
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods: (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions; (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor; (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流：（a）未钝化的表面通过至少两个接头与光电收集触点分离; （b）未钝化的表面被掺杂到非常高的水平，至少等于半导体状态的导带或价带密度; （c）通过施加电场在未钝化的表面上形成堆积或反转层。
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公开(公告)号：US08072525B1
公开(公告)日：2011-12-06
申请号：US12141542
申请日：2008-06-18
IPC分类号： H04N5/335
CPC分类号： H04N5/3575 , H04N5/3745
摘要： Methods and apparatus are provided for performing multiple correlated double sampling (CDS) operations on an imaging pixel, and in some cases on an array of imaging pixels, during a single integration cycle of the pixel(s). The multiple CDS operations may produce multiple CDS values, which may be processed in combination to produce a resulting value substantially free of various types of noise. The CDS operations may be performed using a CDS circuit including a single-ended charge amplifier having an input capacitor. The charge amplifier may also include a variable capacitance providing a variable gain. The variable capacitance may be provided by a feedback capacitor.
摘要翻译： 提供了用于在像素的单个积分周期期间对成像像素执行多个相关双采样（CDS）操作，并且在一些情况下在成像像素阵列上执行的方法和装置。 多个CDS操作可以产生多个CDS值，其可以组合处理以产生基本上不含各种类型的噪声的结果值。 可以使用包括具有输入电容器的单端电荷放大器的CDS电路来执行CDS操作。 电荷放大器还可以包括提供可变增益的可变电容。 可变电容可由反馈电容器提供。
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公开(公告)号：US08035186B2
公开(公告)日：2011-10-11
申请号：US11978276
申请日：2007-10-29
CPC分类号： H01L31/0352 , H01L27/14649 , H01L31/03529 , H01L31/101 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： A photodetector is formed from a body of semiconductor material substantially surrounded by dielectric surfaces. A passivation process is applied to at least one surface to reduce the rate of carrier generation and recombination on that surface. Photocurrent is read out from at least one electrical contact, which is formed on a doped region whose surface lies entirely on a passivated surface. Unwanted leakage current from un-passivated surfaces is reduced through one of the following methods. (a) The un-passivated surface is separated from the photo-collecting contact by at least two junctions (b) The un-passivated surface is doped to a very high level, at least equal to the conduction band or valence band density of states of the semiconductor (c) An accumulation or inversion layer is formed on the un-passivated surface by the application of an electric field. Electrical contacts are made to all doped regions, and bias is applied so that a reverse bias is maintained across all junctions.
摘要翻译： 光电检测器由基本上被电介质表面包围的半导体材料体形成。 钝化过程被应用于至少一个表面以降低载体在该表面上的产生和重组的速率。 从至少一个电触点读出光电流，该电触点形成在其表面完全位于钝化表面上的掺杂区域上。 通过以下方法之一减少未钝化表面的不需要的泄漏电流。 （a）未钝化的表面通过至少两个结与光电收集接触分离（b）未钝化的表面被掺杂到非常高的水平，至少等于状态的导带或价带密度 的半导体（c）通过施加电场在未钝化的表面上形成堆积或反转层。 对所有掺杂区域进行电触点，并且施加偏压，使得跨所有接合部保持反向偏压。
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