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    SOLAR CELL MODULE WITH DUAL PURPOSE VAPOR BARRIER/BUSBAR
    1.
    发明申请
    SOLAR CELL MODULE WITH DUAL PURPOSE VAPOR BARRIER/BUSBAR 审中-公开
    具有双用途蒸汽障碍物/母线的太阳能电池模块

    公开(公告)号：US20140261610A1

    公开(公告)日：2014-09-18

    申请号：US13799060

    申请日：2013-03-13

    申请人： Eric Ng

    发明人： Eric Ng

    IPC分类号： H01L31/048

    CPC分类号： H01L31/03928 ,  H01L31/02013 ,  H01L31/049 ,  Y02E10/541

    摘要： In a photovoltaic module, the solar cells and other necessary layers are placed on a backsheet with a multi-layer structure. A conductive part of a backsheet may provide a vapor barrier as well as replace busbars to route the circuit from one location of the module to another. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 在光伏模块中，太阳能电池和其它必需的层被放置在具有多层结构的底片上。 底片的导电部分可以提供蒸汽屏障以及替换母线以将电路从模块的一个位置引导到另一个位置。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    INTEGRATED JUNCTION INSULATION FOR PHOTOVOLTAIC MODULE
    2.
    发明申请
    INTEGRATED JUNCTION INSULATION FOR PHOTOVOLTAIC MODULE 审中-公开
    光电模块的集成连接绝缘

    公开(公告)号：US20140182651A1

    公开(公告)日：2014-07-03

    申请号：US13797284

    申请日：2013-03-12

    申请人： Michael Rogerson ,  Jing Tian

    发明人： Michael Rogerson ,  Jing Tian

    IPC分类号： H01L31/048

    CPC分类号： H02S40/34 ,  H01L31/0201 ,  H01L31/02013 ,  H01L31/048 ,  Y02E10/50

    摘要： The disclosure relates to apparatus and methods of photovoltaic or solar module design and fabrication. A photovoltaic module includes one or more photovoltaic (PV) cells arranged in an array and sandwiched between a support and a top layer, one or more junction insulation structures laminated and integrated within the PC module between the support and the top layer. The one or more junction insulation structures are configured to protect at least one electrical connections formed between an output wire and a busbar electrically connected to at least one of the one or more PC cells. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译： 本公开涉及光伏或太阳能模块设计和制造的装置和方法。 光伏模块包括以阵列布置并夹在支撑件和顶层之间的一个或多个光伏（PV）单元，一个或多个结合绝缘结构，其在PC模块之间层压并集成在支撑件和顶层之间。 一个或多个接合绝缘结构被配置为保护形成在电连接到一个或多个PC单元中的至少一个PC单元的输出线和母线之间的至少一个电连接。 要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

    Bandgap grading in thin-film devices via solid group IIIA particles
    5.
    发明授权
    Bandgap grading in thin-film devices via solid group IIIA particles 失效
    通过固体IIIA颗粒在薄膜器件中带隙分级

    公开(公告)号：US08372685B2

    公开(公告)日：2013-02-12

    申请号：US11762060

    申请日：2007-06-12

    申请人： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K. J. Van Duren

    发明人： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K. J. Van Duren

    IPC分类号： H01L22/00

    CPC分类号： H01L31/0322 ,  Y02E10/541

    摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment, a method is provided for bandgap grading in a thin-film device using such particles. The method may be comprised of providing a bandgap grading material comprising of an alloy having: a) a IIIA material and b) a group IA-based material, wherein the alloy has a higher melting temperature than a melting temperature of the IIIA material in elemental form. A precursor material may be deposited on a substrate to form a precursor layer. The precursor material comprising group IB, IIIA, and/or VIA based particles. The bandgap grading material of the alloy may be deposited after depositing the precursor material. The alloy in the grading material may react after the precursor layer has begun to sinter and thus maintains a higher concentration of IIIA material in a portion of the compound film that forms above a portion that sinters first.

    摘要翻译： 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在一个实施例中，提供了使用这种颗粒在薄膜装置中进行带隙分级的方法。 该方法可以包括提供一种带隙分级材料，其包括合金，其具有：a）IIIA材料和b）基于IA的材料，其中该合金具有比元素中IIIA材料的熔融温度更高的熔融温度 形成。 可以将前体材料沉积在基底上以形成前体层。 包含IB，IIIA和/或VIA基颗粒的前体材料。 合金的带隙分级材料可以在沉积前体材料之后沉积。 在前体层开始烧结之后，分级材料中的合金可能会发生反应，从而在化合物膜的形成于部分首先烧结的部分之上维持更高浓度的IIIA材料。

    High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles
    6.
    发明申请
    High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles 审中-公开
    从纳米片颗粒中高通量印刷半导体前体层

    公开(公告)号：US20120315722A1

    公开(公告)日：2012-12-13

    申请号：US13589099

    申请日：2012-08-18

    申请人： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm

    发明人： Matthew R. Robinson ,  Jeroen K. J. Van Duren ,  Craig Leidholm

    IPC分类号： H01L31/18

    CPC分类号： H01L31/0322 ,  C23C18/1204 ,  C23C18/127 ,  C23C18/1279 ,  H01L31/0352 ,  H01L31/0749 ,  H01L31/078 ,  H01L31/1864 ,  Y02E10/541 ,  Y02P70/521

    摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.

    摘要翻译： 提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。 特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的纳米片。 由纳米片形成的致密膜特别适用于形成光电器件。

    High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles
    7.
    发明授权
    High-throughput printing of semiconductor precursor layer from inter-metallic microflake particles 失效
    半金属微花纹片的半导体前体层的高通量印刷

    公开(公告)号：US08329501B1

    公开(公告)日：2012-12-11

    申请号：US12176312

    申请日：2008-07-18

    申请人： Matthew R. Robinson ,  Brian M. Sager ,  Jeoren K. J. Van Duren

    发明人： Matthew R. Robinson ,  Brian M. Sager ,  Jeoren K. J. Van Duren

    IPC分类号： H01L21/00

    CPC分类号： B22F1/0055 ,  B22F2001/0033 ,  B22F2998/00 ,  B22F2999/00 ,  C23C4/123 ,  C23C18/1204 ,  C23C18/1225 ,  C23C18/1229 ,  C23C18/1241 ,  C23C18/127 ,  C23C18/1275 ,  C23C18/1283 ,  C23C18/14 ,  C23C24/10 ,  C23C26/00 ,  C23C26/02 ,  H01L31/022466 ,  H01L31/0322 ,  H01L31/06 ,  H01L31/0749 ,  H01L31/18 ,  H01L51/0004 ,  H01L51/0026 ,  H01L51/426 ,  Y02E10/541 ,  Y02E10/549 ,  B22F1/0022

    摘要： Methods and devices are provided for high-throughput printing of semiconductor precursor layer from microflake particles. In one embodiment, the method comprises of transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be microflakes that have a high aspect ratio. The resulting dense film formed from microflakes is particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.

    摘要翻译： 提供了用于从微片微粒高通量印刷半导体前体层的方法和装置。 在一个实施方案中，该方法包括在合适的条件下，在合适的载体中转化非平面或平面前体材料，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在沉降之后。 特别地，平面颗粒更容易分散，形成更密集的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。 这些平面颗粒可以是具有高纵横比的微片。 由微片形成的所得致密膜在形成光伏器件中特别有用。 在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

    Thin-film devices formed from solid particles
    8.
    发明授权
    Thin-film devices formed from solid particles 有权
    由固体颗粒形成的薄膜器件

    公开(公告)号：US08071419B2

    公开(公告)日：2011-12-06

    申请号：US12304683

    申请日：2007-06-12

    申请人： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K. J. Van Duren

    发明人： Matthew R. Robinson ,  Chris Eberspacher ,  Jeroen K. J. Van Duren

    IPC分类号： H01L21/00

    CPC分类号： H01L31/0322 ,  Y02E10/541

    摘要： Methods and devices are provided for forming thin-films from solid group IIIA-based particles. In one embodiment of the present invention, a method is described comprising of providing a first material comprising an alloy of a) a group IIIA-based material and b) at least one other material. The material may be included in an amount sufficient so that no liquid phase of the alloy is present within the first material in a temperature range between room temperature and a deposition or pre-deposition temperature higher than room temperature, wherein the group IIIA-based material is otherwise liquid in that temperature range. The other material may be a group IA material. A precursor material may be formulated comprising a) particles of the first material and b) particles containing at least one element from the group consisting of: group IB, IIIA, VIA element, alloys containing any of the foregoing elements, or combinations thereof. The temperature range described above may be between about 20° C. and about 200° C. It should be understood that the alloy may have a higher melting temperature than a melting temperature of the IIIA-based material in elemental form.

    摘要翻译： 提供了用于从基于固体IIIA的颗粒形成薄膜的方法和装置。 在本发明的一个实施方案中，描述了一种方法，其包括提供包含a）基于IIIA族的材料和b）至少一种其它材料的合金的第一材料。 可以以足够的量包含材料，使得在室温和高于室温的沉积或预沉积温度之间的温度范围内，第一材料中不存在液相，其中基于IIIA族的材料 在该温度范围内为液体。 另一种材料可以是IA族材料。 可以配制前体材料，其包括：a）第一材料的颗粒，和b）含有至少一种元素的颗粒，所述元素包括：IB，IIIA族，VIA族元素，含有任何上述元素的合金，或其组合。 上述温度范围可以在约20℃至约200℃之间。应当理解，该合金可以具有比基于IIIA的材料以元素形式的熔融温度更高的熔融温度。

    Solution-based fabrication of photovoltaic cell
    9.
    发明授权
    Solution-based fabrication of photovoltaic cell 有权
    光伏电池基于解决方案的制造

    公开(公告)号：US08038909B2

    公开(公告)日：2011-10-18

    申请号：US11933338

    申请日：2007-10-31

    申请人： Dong Yu ,  Jacqueline Fidanza ,  Brian M. Sager

    发明人： Dong Yu ,  Jacqueline Fidanza ,  Brian M. Sager

    IPC分类号： H01B1/10 ,  H01B1/12 ,  H01B1/14 ,  H01B1/20 ,  H01L31/20

    CPC分类号： H01L31/06 ,  B82Y5/00 ,  B82Y10/00 ,  B82Y30/00 ,  C23C18/1204 ,  C23C18/1266 ,  C23C18/1295 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541 ,  Y02P70/521

    摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.

    摘要翻译： 公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法，制备活性层的方法和由活性层制成的太阳能电池。 油墨含有IB，IIIA和（任选地）VIA组分的纳米颗粒的混合物。 颗粒的直径在约1nm至约500nm之间的所需粒度范围，其中大部分颗粒的质量包括尺寸不超过平均粒度的约40％或以下的颗粒，或 如果平均粒度小于约5纳米，高于或低于平均粒度的不超过约2纳米。 使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 Se气体的需要，并且允许在膜退火期间更均匀的熔融，更均匀的纳米颗粒的混合，并且允许形成更高质量的吸收膜。