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1.发明授权公开(公告)号：US11744159B2
公开(公告)日：2023-08-29
申请号：US16292873
申请日：2019-03-05
IPC分类号： H10N30/85 , H10N30/853 , C04B35/495 , H10N30/076 , H10N30/097 , H10N30/87 , H10N30/00
CPC分类号： H10N30/8542 , C04B35/495 , H10N30/076 , H10N30/097 , H10N30/1051 , H10N30/871 , C04B2235/768
摘要： There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film contains an alkali niobium oxide represented by a composition formula of (K1−xNax)NbO3 (0
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2.发明授权公开(公告)号：US11094539B2
公开(公告)日：2021-08-17
申请号：US16490704
申请日：2018-02-28
IPC分类号： H01L21/02 , H01L29/20 , H01L29/04 , H01L21/265
摘要： A nitride semiconductor substrate is manufactured by a method which includes growing nitride semiconductor crystal along a c-axis direction on a +C-plane of a seed crystal substrate formed of nitride semiconductor crystal to form an n−-type first nitride semiconductor layer; growing the nitride semiconductor crystal along the c-axis direction on the +C-plane of the first nitride semiconductor layer to form a second nitride semiconductor layer; and removing the seed crystal substrate and exposing a −C-plane of the first nitride semiconductor layer to obtain as a semiconductor substrate a laminate of the first nitride semiconductor layer and the second nitride semiconductor layer, with the −C plane as a main surface.
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公开(公告)号：US10211044B2
公开(公告)日：2019-02-19
申请号：US15561360
申请日：2016-03-02
IPC分类号： H01L21/02 , H01L21/311 , H01L21/66 , H01L21/78 , H01L37/02 , H01L41/187 , H01L41/29 , H01L49/02 , H01L41/332 , H01L21/3213 , H01L27/11507 , H01L41/314 , H01L41/047
摘要： This method for manufacturing a ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a sodium potassium niobate on the lower electrode film; an upper electrode film formation step of forming an upper electrode film on the ferroelectric thin film; and an upper electrode film etching step of shaping the upper electrode film into a desired micro-pattern by performing a reactive ion etching process on the upper electrode film. The upper electrode film etching step is a step of calculating a rate of change of sodium emission intensity in an ion plasma generated by the reactive ion etching process and determining that the etching process is completed when the rate of change falls below a predetermined threshold.
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公开(公告)号：US10199564B2
公开(公告)日：2019-02-05
申请号：US15548543
申请日：2016-01-19
发明人： Fumimasa Horikiri , Kenji Shibata , Kazutoshi Watanabe , Kazufumi Suenaga , Masaki Noguchi , Kenji Kuroiwa
IPC分类号： H01L41/316 , H01L41/332 , H01L41/187 , H01L41/113 , C23C14/34 , C23C14/08 , H01L21/308
摘要： This method for manufacturing a lead-free niobate-system ferroelectric thin film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a predetermined chelating agent including at least one selected from EDTMP, NTMP, CyDTA, HEDP, GBMP, DTPMP, and citric acid; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
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公开(公告)号：US10181407B2
公开(公告)日：2019-01-15
申请号：US15560679
申请日：2016-03-17
发明人： Fumimasa Horikiri , Kenji Shibata , Kazutoshi Watanabe , Kazufumi Suenaga , Masaki Noguchi , Kenji Kuroiwa
IPC分类号： H01L21/308 , H01L41/187 , H01L41/316 , H01L41/332
摘要： This method for manufacturing a niobate-system ferroelectric thin-film device includes: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask pattern formation step of forming an etch mask in a desired pattern on the niobate-system ferroelectric thin film, the etch mask being an amorphous fluororesin film laminated via a noble metal film; and a ferroelectric thin film etching step of shaping the niobate-system ferroelectric thin film into a desired fine pattern by wet etching using an etchant comprising: a chelating agent; an aqueous alkaline solution containing an aqueous ammonia solution; and an aqueous hydrogen peroxide solution.
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6.发明申请公开(公告)号：US20180301618A1
公开(公告)日：2018-10-18
申请号：US15767677
申请日：2016-10-11
IPC分类号： H01L41/18 , B41J2/14 , H03H9/02 , H01L41/318
摘要： There is provided a laminated substrate with a piezoelectric thin film, comprising: a substrate; an electrode film formed on the substrate; and a piezoelectric thin film formed on the electrode film, wherein the piezoelectric thin film is made of an alkali niobium oxide represented by a composition formula of (K1−xNax) NbO 3 (0
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公开(公告)号：US09893266B2
公开(公告)日：2018-02-13
申请号：US15198103
申请日：2016-06-30
IPC分类号： H01L41/187 , H01L41/08 , H01L41/332 , H01L41/314 , H01L41/316 , H01L41/318
CPC分类号： H01L41/0805 , H01L41/1873 , H01L41/314 , H01L41/316 , H01L41/318 , H01L41/332 , Y10T428/24479
摘要： A piezoelectric film element includes a substrate, and a piezoelectric film including an alkali niobate-based perovskite structure expressed in a composition formula (K1-xNax)NbO3 (0.4≦x≦0.7) formed on the substrate, the piezoelectric film including an etching cross section including a tapered inclined portion which is enlarged toward an outside. The inclined portion includes a slope angle made by a slope connecting an upper surface edge and a bottom surface edge of the piezoelectric film and a bottom surface of the piezoelectric film, and the slope angle is not greater than 70°.
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公开(公告)号：US12054847B2
公开(公告)日：2024-08-06
申请号：US17640003
申请日：2020-07-06
发明人： Fumimasa Horikiri , Noboru Fukuhara
IPC分类号： C25F3/12 , C25F7/00 , H01L21/3063
CPC分类号： C25F3/12 , C25F7/00 , H01L21/30635
摘要： A method for manufacturing a structure, including photoelectrochemically etching an etching object, the photoelectrochemical etching of the etching object including: injecting an alkaline or acidic etching solution containing an oxidizing agent that receives electrons, into a rotatably held container in which an etching object at least whose surface is composed of group III nitride is held, and immersing the surface in the etching solution; irradiating the surface of the etching object held in the container with light in a stationary state of the etching object and the etching solution; and rotating the container to scatter the etching solution toward an outer peripheral side, thereby discharging the etching solution from the container, after the surface is irradiated with the light.
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公开(公告)号：US12002880B2
公开(公告)日：2024-06-04
申请号：US17375947
申请日：2021-07-14
发明人： Fumimasa Horikiri , Noboru Fukuhara
IPC分类号： H01L29/778 , H01L21/02 , H01L29/04 , H01L29/20 , H01L29/66
CPC分类号： H01L29/7786 , H01L21/02389 , H01L21/02433 , H01L29/04 , H01L29/2003 , H01L29/66431
摘要： There is provided a method for manufacturing a nitride-based high electron mobility transistor, including: providing a conductive member on a nitride semiconductor crystal substrate, outside an element region in a plan view; forming a mask on the substrate, the mask having an opening in at least one of a source recess etching region and a drain recess etching region; performing photoelectrochemical etching by irradiating the substrate with light to form at least one of a source recess and a drain recess, in a state where the substrate on which the conductive member is provided and the mask is formed is in contact with an etching solution containing an oxidizing agent that receives electrons; and forming an element separation structure of the high electron mobility transistor.
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公开(公告)号：US11805700B2
公开(公告)日：2023-10-31
申请号：US16619871
申请日：2018-04-19
IPC分类号： H01L41/047 , H01L41/187 , H01L41/29 , H01L41/316 , H10N30/87 , H10N30/06 , H10N30/076 , H10N30/853
CPC分类号： H10N30/878 , H10N30/06 , H10N30/076 , H10N30/8542
摘要： There is provided a laminated substrate having a piezoelectric film, including: a substrate; a first electrode film provided on the substrate; and a piezoelectric film provided on the first electrode film, wherein an oxide film containing an oxide represented by a composition formula of RuOx or IrOx, is provided on the piezoelectric film.
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