-
公开(公告)号：US06440212B1
公开(公告)日：2002-08-27
申请号：US09794194
申请日：2001-02-27
申请人： Donald J. Hayes
发明人： Donald J. Hayes
IPC分类号： C30B1912
CPC分类号： C30B19/066
摘要： A process of making thermoelectric coolers by direct printing of n- and p-type semiconductor materials suitable for making thermoelectric coolers is disclosed. Micro Jet Printing of arrays on n and p-type materials belong to conductive site pads on non-conductive substrate and crystalization of these materials in the preferred direction as they cool produces thermoelectric cooler components without the need for sawing and machining operations. A non-conductive top substrate having conductive bonding pads is secured to the tops of the columns n and p-type semiconductor materials thereby forming an electrical and physical bond to make a thermoelectric cooler package.
摘要翻译： 公开了通过直接印刷适合于制造热电冷却器的n型和p型半导体材料制造热电冷却器的工艺。 在n和p型材料上的阵列的微喷射印刷属于非导电基底上的导电性位置焊盘，并且在冷却时，这些材料的结晶化在优选的方向上产生热电冷却器部件，而不需要锯切和加工操作。 具有导电接合焊盘的非导电顶层基板固定到列n和p型半导体材料的顶部，从而形成电和物理结合以制造热电冷却器封装。
-
公开(公告)号：US3756194A
公开(公告)日：1973-09-04
申请号：US3756194D
申请日：1972-03-29
申请人： WESTERN ELECTRIC CO
发明人： LIEN S
CPC分类号： C30B19/066 , H01L21/00 , Y10S148/107
摘要： A vertically oriented rotatable drum includes a receptacle centrally disposed therein. Positioning means disposed within the annulus defined by the drum and receptacle side walls are adapted to confine a substrate against vertical movement while permitting lateral movement. The direction of such movement is determinable by densities of materials handled and drum speed. Means communicate the receptacle with the annular region whereby fluid material may coat alternate sides of the laterally shifting substrate.
摘要翻译： 垂直取向的可旋转滚筒包括居中设置在其中的容器。 设置在由滚筒和容器侧壁限定的环形空间内的定位装置适于限制衬底抵抗垂直运动，同时允许侧向移动。 这种运动的方向可以通过处理材料的密度和鼓速度来确定。 装置将容器与环形区域连通，由此流体材料可以涂覆横向移动衬底的交替侧面。
-
3.发明授权
公开(公告)号：US3755011A
公开(公告)日：1973-08-28
申请号：US3755011D
申请日：1972-06-01
申请人： RCA CORP
发明人： KLEINKNECHT H , OBERHOLZER A
CPC分类号： C30B19/066 , H01L21/00
摘要： An epitaxial layer of a semiconductive material is deposited on a substrate in a furnace boat having a well and a cup-shaped piston fitting in the well with the piston having a small hole in its top end. A heated solution of the semiconductive material dissolved in a molten metal solvent is provided in the well. The piston is pressed down against the solution to force some of the solution through the hole in the piston onto the top end of the piston. As the solution passes through the hole in the piston the solution is scraped clean of contaminants. The substrate is placed against the cleaned portion of the solution on the top end of the piston and the solution is cooled to deposit an epitaxial layer of the semiconductive material onto the substrate.
摘要翻译： 将半导体材料的外延层沉积在具有孔的炉船中的基板上，并且杯形活塞安装在井中，活塞在其顶端具有小孔。 将溶解在熔融金属溶剂中的半导体材料的加热溶液设置在该孔中。 活塞被压靠在溶液上以迫使一些溶液通过活塞中的孔穿过活塞的顶端。 当溶液通过活塞中的孔时，溶液被刮去清洁的污染物。 将衬底放置在活塞的顶端上的溶液的清洁部分上，并将溶液冷却以将半导体材料的外延层沉积到衬底上。
-
公开(公告)号：US3713883A
公开(公告)日：1973-01-30
申请号：US3713883D
申请日：1970-05-27
申请人： WESTERN ELECTRIC CO
发明人： LIEN S
CPC分类号： C30B19/066 , H01L21/00 , Y10S148/006 , Y10S148/107
摘要： A mixture (liquid or solid), including a solvent, a solute (comprising the constituents of a crystal to be grown), and any desired dopant, is placed in a drum rotatable on a major (and preferably generally vertical) axis. Substrates are mounted in the drum above the mixture level. The mixture is heated to dissolve the solute and form a solution. The solution is moved over and covers the substrates via a centrifugally induced forced vortex by rotating the drum. The system is controllably cooled, or otherwise affected, to effect crystal growth on the substrate. Expedients are provided to accomodate substrates both denser than and less dense than the solution and to obviate undesirable effects of contaminants in the solution. Defects in the grown crystals caused by temperature gradients, solution concentration gradients and turbulence are also obviated by appropriate facilities.
摘要翻译： 将包含溶剂，溶质（包括待生长的晶体的组分）和任何所需的掺杂剂的混合物（液体或固体）放置在可旋转主轴（优选大致垂直）的滚筒中。 衬底安装在混合物层上方的鼓中。 将混合物加热以溶解溶质并形成溶液。 通过旋转滚筒通过离心诱导的强制涡流将溶液移动并覆盖基底。 该系统被可控制地冷却或以其他方式影响，以在衬底上实现晶体生长。 提供了适应性以适应比溶液更致密且密度低的底物，并消除溶液中污染物的不良影响。 由温度梯度，溶液浓度梯度和湍流引起的生长晶体的缺陷也被适当的设施所消除。
-
5.发明授权
公开(公告)号：US4594126A
公开(公告)日：1986-06-10
申请号：US630211
申请日：1984-07-12
申请人： Melvin S. Cook
发明人： Melvin S. Cook
CPC分类号： C30B19/066 , C30B19/08
摘要： An apparatus and method for the growth of thin epitaxial layers on crystalline substrates. A portion of the growth surface of a substrate held at temperature T.sub.2 is contacted with a solution with a saturation temperature T.sub.s in a narrow channel while the solution is in streamline flow in the channel. The substrate is mounted on a slider. As the slider is moved across the narrow channel, progressively different portions of the growth surface are exposed to, and withdrawn from exposure to, the flowing solution. The rate of growth of epitaxial material on the growth surface of the substrate is determined by the relationship between T.sub.s, T.sub.2 and the temperature T.sub.1 of the solution as it enters the narrow channel. The thickness of the epitaxial layer on a portion of the growth surface is determined by the rate of growth of epitaxial material and the dwell time during which the portion of the growth surface is exposed to the flowing solution.
摘要翻译： 一种用于在晶体衬底上生长薄外延层的装置和方法。 将保持在温度T2的衬底的生长表面的一部分与窄通道中的饱和温度Ts的溶液接触，同时溶液在通道中处于流线中。 基板安装在滑块上。 当滑块移动穿过窄通道时，生长表面的逐渐不同部分暴露于暴露于流动溶液中并从曝光中排出。 外延材料在衬底的生长表面上的生长速率由溶液在进入窄通道时的Ts，T2与溶液温度T1之间的关系决定。 生长表面的一部分上的外延层的厚度由外延材料的生长速率和生长表面部分暴露于流动溶液的停留时间决定。
-
公开(公告)号：US3809010A
公开(公告)日：1974-05-07
申请号：US29990672
申请日：1972-10-24
发明人： SPRINGTHORPE A
CPC分类号： C30B19/068 , C30B19/066
摘要： A holder for liquid epitaxial growth includes a vertically slotted wall and a plurality of stacked recessed receptacles closely fitted within the holder and adapted to support the substrates. Each support is slotted through the peripheral wall thereof whereby to communicate the recess with the vertical slot. The loaded holder is contained in a crucible and pressurized means charge the crucible with the growth material.
摘要翻译： 用于液体外延生长的保持器包括垂直开槽的壁和紧密地装配在保持器内并适于支撑基板的多个堆叠的凹槽。 每个支撑件穿过其周壁开槽，从而将凹槽与垂直槽连通。 加载的保持器容纳在坩埚中，加压装置用成长材料对坩埚充电。
-
公开(公告)号：US09315917B2
公开(公告)日：2016-04-19
申请号：US13561350
申请日：2012-07-30
CPC分类号： C30B29/06 , C30B11/001 , C30B11/04 , C30B13/005 , C30B19/066 , C30B19/068 , C30B19/10 , Y10T117/1068
摘要： Apparatus and method for a crucible-less production of silicon ingots, wherein a support with a seed layer and a liquid layer is gradually lowered in a temperature field with a vertical gradient to solidify the liquid layer in a controlled way.
摘要翻译： 用于无坩埚生产硅锭的装置和方法，其中具有种子层和液体层的载体在垂直梯度的温度场中逐渐降低，以受控的方式固化液体层。
-
公开(公告)号：US4597823A
公开(公告)日：1986-07-01
申请号：US531230
申请日：1983-09-12
申请人： Melvin S. Cook
发明人： Melvin S. Cook
CPC分类号： C30B19/066 , C30B19/08
摘要： An apparatus and a method for growth of material on substrates. A substrate at temperature T.sub.2 is placed with a surface in contact with solution in streamline flow through a narrow channel. The solution enters the channel with a temperature, T.sub.1, which is above its saturation temperature, T.sub.s, T.sub.2 is below T.sub.s, so material will deposit on the substrate surface. The flow of solution is maintained high enough to avoid the onset of constitutional supercooling.
摘要翻译： 用于在基底上生长材料的装置和方法。 在温度T2的衬底上放置一个与溶液接触的表面，在流线中流过窄通道。 溶液以高于其饱和温度的温度T1进入通道，Ts，T2低于Ts，因此材料将沉积在基板表面上。 溶液的流动保持足够高以避免结构过冷的发生。
-
公开(公告)号：US4594128A
公开(公告)日：1986-06-10
申请号：US590469
申请日：1984-03-16
申请人： Melvin S. Cook
发明人： Melvin S. Cook
CPC分类号： C30B19/08 , C30B19/066
摘要： An apparatus and a method for the growth of an epitaxial layer on a substrate from a solution. Solution is brought into contact with a substrate in a narrow channel. Cooling fluid flowing through a second channel maintains the substrate temperature below the saturation temperature of the solution, and heating fluid flowing through a third channel maintains the wall of the narrow channel opposite the substrate above the saturation temperature of the solution.
摘要翻译： 一种用于从溶液在衬底上生长外延层的装置和方法。 溶液与窄通道中的基底接触。 流过第二通道的冷却流体将衬底温度保持在溶液的饱和温度以下，并且流过第三通道的加热流体将与衬底相对的窄通道的壁保持在溶液的饱和温度以上。
-
公开(公告)号：US4519871A
公开(公告)日：1985-05-28
申请号：US555276
申请日：1983-11-25
申请人： Melvin S. Cook
发明人： Melvin S. Cook
CPC分类号： C30B19/066
摘要： A method and apparatus for growing multiple epitaxial layers with at least two different compositions on a substrate from solutions. The substrate is mounted in a channel communicating with solutions of different compositions. A gas bubble located in the channel separates the solutions from each other. The different solutions are moved into sequential contact with the substrate in order to grow the epitaxial layers in the sequence desired, with a gas bubble sweeping across the substrate between sequential contact with the substrate of the different solutions.
摘要翻译： 一种用于在溶液中在衬底上生长具有至少两种不同组成的多个外延层的方法和装置。 衬底安装在与不同组成的溶液连通的通道中。 位于通道中的气泡将溶液彼此分离。 将不同的溶液移动到与衬底的顺序接触中，以便以期望的顺序生长外延层，气泡在与不同溶液的衬底的顺序接触之间扫过衬底。
-
-
-
-
-
-
-
-
-
搜索结果
16 条记录 (耗时 0.011 秒)
