公开(公告)号：US08760919B2

公开(公告)日：2014-06-24

申请号：US13598892

申请日：2012-08-30

Applicant: Jung-Ho Song ,  Jin-Yub Lee ,  Jae-Woo Im ,  Seung-Jae Lee ,  Sang-So Park

Inventor： Jung-Ho Song ,  Jin-Yub Lee ,  Jae-Woo Im ,  Seung-Jae Lee ,  Sang-So Park

IPC: G11C11/56 ,  G11C16/04

CPC classification number: G11C11/56 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3404 ,  G11C2211/56

Abstract: A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.

Abstract translation: 提供了一种用于在非易失性存储器件中读取数据的方法。 该方法包括：对多个多电平存储器单元（MLC），在对应于MLC中的至少一个标志单元，基于所述结果选择性地执行上的MLC的第二读取操作执行第一读出操作的第一次读操作 第一感测操作，并且当执行第二读取操作时对所述至少一个标志单元执行第二感测操作。 在不执行第二读取操作时，基于第一读取操作和第一感测操作的结果输出读取数据，并且基于第一读取操作，第一感测操作，第二读取操作的结果来输出读取数据 以及执行第二读取操作时的第二感测操作。 读取数据对应于MLC中的编程数据。

公开(公告)号：US20130128662A1

公开(公告)日：2013-05-23

申请号：US13598892

申请日：2012-08-30

Applicant: JUNG-HO SONG ,  JIN-YUB LEE ,  JAE-WOO IM ,  SEUNG-JAE LEE ,  SANG-SO PARK

Inventor： JUNG-HO SONG ,  JIN-YUB LEE ,  JAE-WOO IM ,  SEUNG-JAE LEE ,  SANG-SO PARK

IPC: G11C16/04 ,  G11C16/26

CPC classification number: G11C11/56 ,  G11C11/5642 ,  G11C16/04 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3404 ,  G11C2211/56

Abstract: A method is provided for reading data in a nonvolatile memory device. The method includes performing a first read operation on multiple multi-level memory cells (MLCs), performing a first sensing operation on at least one flag cell corresponding to the MLCs, selectively performing a second read operation on the MLCs based on a result of the first sensing operation, and performing a second sensing operation on the at least one flag cell when the second read operation is performed. Read data is output based on results of the first read operation and the first sensing operation when the second read operation is not performed, and the read data is output based on result of the first read operation, the first sensing operation, the second read operation and the second sensing operation when the second read operation is performed. The read data corresponds to programmed data in the MLCs.

Abstract translation: 提供了一种用于在非易失性存储器件中读取数据的方法。 该方法包括对多个多级存储器单元（MLC）执行第一读取操作，对与MLC相对应的至少一个标志单元执行第一感测操作，基于MLC的结果选择性地执行第二读取操作 第一感测操作，并且当执行第二读取操作时对所述至少一个标志单元执行第二感测操作。 在不执行第二读取操作时，基于第一读取操作和第一感测操作的结果输出读取数据，并且基于第一读取操作，第一感测操作，第二读取操作的结果来输出读取数据 以及执行第二读取操作时的第二感测操作。 读取数据对应于MLC中的编程数据。

公开(公告)号：US20140173173A1

公开(公告)日：2014-06-19

申请号：US13713921

申请日：2012-12-13

Applicant: ELPIDA MEMORY, INC.

Inventor： Luca Battu ,  Antonino Geraci ,  Mauro Pagliato ,  Stefano Surico

IPC: G06F12/02 ,  G06F12/06

CPC classification number: G06F12/0246 ,  G06F12/06 ,  G11C11/5621 ,  G11C2211/56 ,  G11C2211/5641

Abstract: A method includes providing a partition command to a device that includes a memory array including a plurality of memory cells. In response to the providing of the partition command, the memory cells of the memory array are partitioned to select a portion of the memory array. In response to the providing of the partition command, one of bit numbers that are to be stored in one memory cell is selected, so that each of the memory cells included in the selected portion stores data with the selected one of the bit numbers.

Abstract translation: 一种方法包括向包括包括多个存储单元的存储器阵列的设备提供分区命令。 响应于提供分区命令，存储器阵列的存储单元被分割以选择存储器阵列的一部分。 响应于提供分区命令，选择要存储在一个存储器单元中的一个位数，使得包括在所选部分中的每个存储单元存储具有所选择的一个位数的数据。