摘要:
Provided are an optical coupler and an active optical module including the same. The optical coupler includes at least one first optical fiber, a second optical fiber, and a hollow optical block. The at least one first optical fiber transfers pump light. The second optical fiber includes a cladding with a facet enlarged from a first outer diameter to a second outer diameter, and passes the pump light which is transferred through the first optical fiber. The hollow optical block includes a through hole, an incident surface, and a coupling surface. The through hole passes the cladding with the first outer diameter. The incident surface is connected to the first optical fiber at a side end of the through hole. The coupling surface is joined to the facet of the second optical fiber at the other side end of the through hole facing the incident surface.
摘要:
A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
摘要:
Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.
摘要:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
摘要:
Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.
摘要:
A nonvolatile memory system is operated by performing a program loop on each of a plurality of memory cells, each program loop comprising at least one program-verify operation and selectively pre-charging bit lines associated with each of the plurality of memory cells during the at least one program-verify operation.
摘要:
A flash memory device controls a common source line voltage and performs a program verify method. A plurality of memory cells is connected between a bit line and the common source line. A data input/output circuit is connected to the bit line and is configured to store data to be programmed in a selected memory cell of the plurality of memory cells. The data input/output circuit maintains data to be programmed within the data input/output circuit during a program verify operation, and decreases noise in the common source line by selectively precharging the bit line based on the data to be programmed.
摘要:
Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.
摘要:
An analog translator for the IEEE 1394 serial bus by which it is possible to use an analog device as a part of a home network when the analog device is connected to the IEEE 1394 serial bus and a translating method thereof are provided. The analog translator includes a plurality of ports to which analog devices are connected, a status register for showing which analog devices are connected, a configuration ROM for storing the information on the connected analog devices, a controller for setting the corresponding bit of a status register assigned to an analog device, reading the bit status of the set status register, and recording connection information of the analog device to the configuration ROM which refer to the bit status of the status register, when an analog device is connected to the port, a 1394 interfacing unit for receiving a packet data from the IEEE 1394 bus, checking whether the packet data corresponds to the node thereof, and disintegrating packet data and thus removing a header from the packet data when the packet data corresponds to the node thereof, a storing unit for storing payload data removed of a header from the 1394 interface, a destination unit extractor for decoding the payload data of the storing unit and extracting information on the destination analog device of the payload data, and a data translating unit for translating the payload data removed of the information on the destination analog device into analog signal. According to the present invention, it is possible to interface both analog and digital devices in realizing an IEEE 1394 home network.
摘要:
A program verification method is for a nonvolatile memory device which programs a plurality of memory cells. The program verification method includes applying a plurality of verification voltages, and determining whether programming of memory cells, having different target threshold voltage distributions, from among the plurality of memory cells is completed based on one of the plurality of verification voltages.