Abstract:
A system includes an integrated circuit (IC) design data base having a feature, a source configured to generate a radiation beam, a pattern generator (PG) including a mirror array plate and an electrode plate disposed over the mirror array plate, wherein the electrode plate includes a lens let having a first dimension and a second dimension perpendicular to the first dimension with the first dimension larger than the second dimension so that the lens let modifies the radiation beam to form the long shaped radiation beam, and a stage configured secured the substrate. The system further includes an electric field generator connecting the mirror array plate. The mirror array plate includes a mirror. The mirror absorbs or reflects the radiation beam. The radiation beam includes electron beam or ion beam. The second dimension is equal to a minimum dimension of the feature.
Abstract:
Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.
Abstract:
Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.
Abstract:
Apparatuses and systems for a die-integrated aspheric mirror are described herein. One apparatus includes an ion trap die including a number of ion locations and an aspheric mirror integrated with the ion trap die.
Abstract:
Devices and systems for reflecting ions are provided. In general, the devices and systems include a plurality of curved lens plates adapted for connection to at least one voltage source and having a passage therein to allow the ions to pass therethrough. The plurality of curved lens plates generates electric fields having elliptic equipotential surfaces that reflect and focus the ions as they pass through the passage. Reflectron time-of-flight (RE-TOF) spectrometers are also provided that include an ion source, ion detector, and such a reflectron as described above. Mass spectrometer systems are provided that comprise an ion source that generates ions and a reflectron TOF spectrometer such as described above.
Abstract:
A system includes an integrated circuit (IC) design data base having a feature, a source configured to generate a radiation beam, a pattern generator (PG) including a mirror array plate and an electrode plate disposed over the mirror array plate, wherein the electrode plate includes a lens let having a first dimension and a second dimension perpendicular to the first dimension with the first dimension larger than the second dimension so that the lens let modifies the radiation beam to form the long shaped radiation beam, and a stage configured secured the substrate. The system further includes an electric field generator connecting the minor array plate. The mirror array plate includes a mirror. The mirror absorbs or reflects the radiation beam. The radiation beam includes electron beam or ion beam. The second dimension is equal to a minimum dimension of the feature.
Abstract:
Devices and systems for reflecting ions are provided. In general, the devices and systems include a plurality of curved lens plates adapted for connection to at least one voltage source and having a passage therein to allow the ions to pass therethrough. The plurality of curved lens plates generates electric fields having elliptic equipotential surfaces that reflect and focus the ions as they pass through the passage. Reflectron time-of-flight (RE-TOF) spectrometers are also provided that include an ion source, ion detector, and such a reflectron as described above. Mass spectrometer systems are provided that comprise an ion source that generates ions and a reflectron TOF spectrometer such as described above.
Abstract:
1. A GLASS FOR LASER USE COMPRISING THE FOLLOWING COMPONENTS, IN PRESENT BY WEIGHT-40-90% OF METAPHOSPHATES SELECTED FROM THE GROUP CONSISTING OF LI, NA, K, ZN, CD, BA, PB, MG, CA, AND SR, 5-50% OF PHOSPHATES OF ELEMENTS SELECTED FROM THE GROUP CONSISTING OF AL, ZR, B, AND CE, 1-7% OF TRIVALENT NEODYMIUM ND3+, AND 0.3-5% OF TRIVALENT YTTERBIUM UB3+, SAID GLASS HAVING A THERMAL EXPANSION COEFFICIENT IN THE RANGE OF 50-160X10**-7 1/DEGREE, A MICROHARDNESS IN THE RANGE OF 300-450 KG./MM,2,A QUANTUM EFFICIENCY OF TRANSMISSION OF ND3+>YB3+HIGHER THAN 0.7, THE SECTION OF STIMULATED EMISSION OF YTTERBIUM AT X=1060 NM. BEING EQUAL TO ABOUT 2.5-5X10**-21 CM.2, AND A MAXIMUM INVERSION AT ELECTRIC ENERGY OF PUMPING OF 80 JOULES/CM.3 IS 1.5 TO 2X10**19 1/CM.2.