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公开(公告)号:US20060186544A1
公开(公告)日:2006-08-24
申请号:US11252646
申请日:2005-10-18
申请人: Sung-Joon Won , Oh Kwon , Sung Lee
发明人: Sung-Joon Won , Oh Kwon , Sung Lee
IPC分类号: H01L23/48
CPC分类号: H01L24/45 , H01L24/43 , H01L2224/43848 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48095 , H01L2224/48247 , H01L2224/48465 , H01L2224/78301 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01021 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/0105 , H01L2924/01055 , H01L2924/01059 , H01L2924/01061 , H01L2924/01064 , H01L2924/01073 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01087 , H01L2924/01088 , H01L2924/01203 , H01L2924/01205 , H01L2924/10252 , H01L2924/10253 , H01L2924/14 , H01L2924/20755 , H01L2924/30105 , H01L2924/0106 , H01L2924/01004 , H01L2924/00014 , H01L2924/00 , H01L2924/013 , H01L2924/00015 , H01L2924/01062 , H01L2924/01071 , H01L2924/01085
摘要: Provided is a copper bonding wire formed of a high purity copper of 99.999% or more including at least one of P and Nb within a range between 20 wt ppm and 100 wt ppm and at least one of Zr, Sn, Be, Nd, Sc, Ga, Fr, and Ra within a range between 1 wt ppm and 100 wt ppm. Here, a total content of the added elements is restricted within a range between 20 wt ppm and 200 wt ppm, and a residual amount of the copper bonding wire is a high purity copper of 99.98% or more. As a result, metal squeeze out and chip cratering can be reduced in a general semiconductor chip and a low dielectric semiconductor chip. Also, a short tail of the copper bonding wire occurring during bonding of the copper bonding wire to a lead finger can be reduced.
摘要翻译: 提供一种由99.999%以上的高纯度铜构成的铜键合线,其包含在20〜100重量ppm的范围内的P和Nb中的至少一种,以及Zr,Sn,Be,Nd,Sc中的至少一种 ,Ga,Fr和Ra在1重量ppm至100重量ppm的范围内。 这里,添加元素的总含量限制在20重量ppm〜200重量ppm的范围内,铜键合线的残留量为99.98%以上的高纯度铜。 结果,在一般的半导体芯片和低介电半导体芯片中,可以减少金属挤出和芯片凹坑。 此外,可以减少在铜接合线与引线指的接合期间发生的铜接合线的短尾。