公开(公告)号：US08860083B1

公开(公告)日：2014-10-14

申请号：US13892737

申请日：2013-05-13

申请人： Sensors Unlimited, Inc.

发明人： John Alfred Trezza

IPC分类号： H01L31/101 ,  H01L31/112 ,  H01L31/11 ,  H01L31/18 ,  H01L33/00 ,  H01L31/105 ,  H01L27/146 ,  H01L31/107

CPC分类号： H01L31/1129 ,  H01L27/14612 ,  H01L27/14649 ,  H01L27/14679 ,  H01L27/14694 ,  H01L31/105 ,  H01L31/1075 ,  H01L31/1105 ,  H01L31/1122 ,  H01L31/1123 ,  H01L31/1844 ,  H01L33/0016

摘要： A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells.

摘要翻译： 低噪声红外光电探测器具有包括光电二极管和晶体管的外延异质结构。 光电二极管包括第一导电类型的高灵敏度窄带隙光电检测器层和与光电检测器层接触的第二导电类型的收集阱。 晶体管包括收集阱，与收集阱和光电检测器层隔开的第二导电类型的转移阱以及在收集阱和转移阱之间的第一导电类型的区域。

公开(公告)号：US20090075417A1

公开(公告)日：2009-03-19

申请号：US12179433

申请日：2008-07-24

申请人： Maki SAITO

发明人： Maki SAITO

IPC分类号： H01L21/00

CPC分类号： H01L31/1122 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14689

摘要： In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

摘要翻译： 在具有光电转换部分和配备有用于转移在光电转换部分中产生的电荷的电荷转移电极的电荷转移部分的本发明的固态成像装置中，电荷转移电极具有第一 其包括第一层导电膜和包括第二层导电膜的第二层电极，所述第二层电极形成在包括由氧化硅膜和金属氧化物薄膜构成的层压膜的栅极氧化物膜上，并且所述第一层导电膜 层间电极和第二层电极通过绝缘体分离，该电极间绝缘膜包括通过CVD工艺形成的侧壁绝缘膜以覆盖第一层电极的侧壁。

公开(公告)号：US07772017B2

公开(公告)日：2010-08-10

申请号：US12179433

申请日：2008-07-24

申请人： Maki Saito

发明人： Maki Saito

IPC分类号： H01L21/66 ,  H01L21/98 ,  H01L21/8238 ,  H01L21/302

CPC分类号： H01L31/1122 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14689

摘要： In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

摘要翻译： 在具有光电转换部分和配备有用于转移在光电转换部分中产生的电荷的电荷转移电极的电荷转移部分的本发明的固态成像装置中，电荷转移电极具有第一 其包括第一层导电膜和包括第二层导电膜的第二层电极，所述第二层电极形成在包括由氧化硅膜和金属氧化物薄膜构成的层压膜的栅极氧化物膜上，并且所述第一层导电膜 层间电极和第二层电极通过绝缘体分离，该电极间绝缘膜包括通过CVD工艺形成的侧壁绝缘膜以覆盖第一层电极的侧壁。

公开(公告)号：US5001530A

公开(公告)日：1991-03-19

申请号：US315246

申请日：1989-02-24

申请人： Jerzy M. Kurianski ,  Martin A. Green

发明人： Jerzy M. Kurianski ,  Martin A. Green

IPC分类号： H01L27/148 ,  H01L31/0232 ,  H01L31/108 ,  H01L31/112

CPC分类号： H01L31/0232 ,  H01L27/14875 ,  H01L31/108 ,  H01L31/1122 ,  H01L31/1125

摘要： A Schottky barrier CCD infra-red (IR) detector array having Schottky junction IR sensitive gates as the transfer gates of the CCD array. These Schottky gates perform both IR detection and CCD shift register function within the array, thereby improving the fill factor and/or pixel size of the device.

摘要翻译： 肖特基势垒CCD红外（IR）检测器阵列具有肖特基结IR敏感门作为CCD阵列的传输门。 这些肖特基门在阵列内执行IR检测和CCD移位寄存器功能，从而提高器件的填充因子和/或像素大小。

公开(公告)号：US07420235B2

公开(公告)日：2008-09-02

申请号：US11499697

申请日：2006-08-07

申请人： Maki Saito

发明人： Maki Saito

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/148 ,  H01L29/747 ,  H01L29/768 ,  H01L29/74 ,  H01L31/06

CPC分类号： H01L31/1122 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14689

摘要： In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode including a first layer electrically conducting film and a second layer electrode including a second layer electrically conducting film, which are formed on a gate oxide film including a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film including a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

摘要翻译： 在具有光电转换部分和配备有用于转移在光电转换部分中产生的电荷的电荷转移电极的电荷转移部分的本发明的固态成像装置中，电荷转移电极具有第一 包括第一层导电膜的层状电极和包括第二层导电膜的第二层电极，其形成在包括由氧化硅膜和金属氧化物薄膜构成的层压膜的栅极氧化膜上，第一层 层间电极和第二层电极通过绝缘体分离，其中电极间绝缘膜包括通过CVD工艺形成的侧壁绝缘膜以覆盖第一层电极的侧壁。

公开(公告)号：US20070034981A1

公开(公告)日：2007-02-15

申请号：US11499697

申请日：2006-08-07

申请人： Maki Saito

发明人： Maki Saito

IPC分类号： H01L31/06

CPC分类号： H01L31/1122 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14689

摘要： In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode comprising a first layer electrically conducting film and a second layer electrode comprising a second layer electrically conducting film, which are formed on a gate oxide film comprising a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film comprising a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

摘要翻译： 在具有光电转换部分和配备有用于转移在光电转换部分中产生的电荷的电荷转移电极的电荷转移部分的本发明的固态成像装置中，电荷转移电极具有第一 其包括第一层导电膜和包括第二层导电膜的第二层电极，所述第二层电极形成在包括由氧化硅膜和金属氧化物薄膜构成的层压膜的栅极氧化物膜上，并且所述第一层导电膜 层间电极和第二层电极通过绝缘体分离，该电极间绝缘膜包括通过CVD工艺形成的侧壁绝缘膜以覆盖第一层电极的侧壁。

公开(公告)号：US6091092A

公开(公告)日：2000-07-18

申请号：US373237

申请日：1995-01-05

申请人： Sophie Caranhac ,  Yves Thenoz

发明人： Sophie Caranhac ,  Yves Thenoz

IPC分类号： H01L27/148 ,  H01L31/112 ,  H01L29/768

CPC分类号： H01L31/1122 ,  H01L27/14831

摘要： The invention relates to a charge-coupled device. Such devices comprise at least one insulated conducting gate (3) connecting two semiconductor zones. According to the invention, each insulated conducting gate (3) has a width progressively increasing from the first semiconductor zone (1) to the second semiconductor zone (2). The width of each gate (3) is sufficiently narrow for the potential well created by the application of a voltage V to the gate to have a depth increasing progressively from the first zone (1) to the second zone (2), thus enabling the charges to be driven away. The invention applies to any type of charge-coupled device and particularly to photodiodes.

摘要翻译： PCT No.PCP / FR94 / 00506 Sec。 371 1995年1月5日第 102（e）日期1995年1月5日PCT提交1994年5月3日PCT公布。 出版物WO94 / 27322 日期：1994年11月24日本发明涉及电荷耦合器件。 这种装置包括连接两个半导体区域的至少一个绝缘导电栅极（3）。 根据本发明，每个绝缘导电栅极（3）的宽度从第一半导体区域（1）逐渐增加到第二半导体区域（2）。 每个栅极（3）的宽度对于通过向栅极施加电压V以使深度从第一区域（1）逐渐增加到第二区域（2）而产生的势阱足够窄，从而使得 收费被赶走。 本发明适用于任何类型的电荷耦合器件，特别适用于光电二极管。