RESONATOR DEVICE AND METHOD OF OPTIMIZING A Q-FACTOR
    1.
    发明申请
    RESONATOR DEVICE AND METHOD OF OPTIMIZING A Q-FACTOR 有权
    谐振器装置和优化Q因子的方法

    公开(公告)号:US20120105163A1

    公开(公告)日:2012-05-03

    申请号:US13257053

    申请日:2010-03-15

    申请人: Peter Steeneken

    发明人: Peter Steeneken

    IPC分类号: H03H9/24 G06F17/50 H03H9/02

    摘要: A resonator device (200) comprises a base (206) comprising an anchor (204) and a vibration unit (212) connected to the anchor (204). The vibration unit (212) is configured to have a first vibration mode (218) and a second vibration mode (216) different from the first vibration mode (218). According to an embodiment, the vibration unit (212) is configured such that the first vibration mode (218) and the second vibration mode (216) destructively interfere at the anchor (204).

    摘要翻译: 谐振器装置(200)包括基座(206),其包括锚(204)和连接到锚(204)的振动单元(212)。 振动单元(212)被配置为具有与第一振动模式(218)不同的第一振动模式(218)和第二振动模式(216)。 根据实施例,振动单元(212)构造成使得第一振动模式(218)和第二振动模式(216)在锚(204)处相消干涉。

    Resonator device and method of optimizing a Q-factor
    3.
    发明授权
    Resonator device and method of optimizing a Q-factor 有权
    谐振器器件和优化Q因子的方法

    公开(公告)号:US08981874B2

    公开(公告)日:2015-03-17

    申请号:US13257053

    申请日:2010-03-15

    申请人: Peter Steeneken

    发明人: Peter Steeneken

    IPC分类号: H03H9/24 G06F17/50 H03H9/02

    摘要: A resonator device (200) comprises a base (206) comprising an anchor (204) and a vibration unit (212) connected to the anchor (204). The vibration unit (212) is configured to have a first vibration mode (218) and a second vibration mode (216) different from the first vibration mode (218). According to an embodiment, the vibration unit (212) is configured such that the first vibration mode (218) and the second vibration mode (216) destructively interfere at the anchor (204).

    摘要翻译: 谐振器装置(200)包括基座(206),其包括锚(204)和连接到锚(204)的振动单元(212)。 振动单元(212)被配置为具有与第一振动模式(218)不同的第一振动模式(218)和第二振动模式(216)。 根据实施例,振动单元(212)构造成使得第一振动模式(218)和第二振动模式(216)在锚(204)处相消干涉。

    MEMS resonator
    6.
    发明授权
    MEMS resonator 有权
    MEMS谐振器

    公开(公告)号:US08680951B2

    公开(公告)日:2014-03-25

    申请号:US12993486

    申请日:2009-05-08

    IPC分类号: H03H9/00 H01P7/00

    摘要: A micro-electromechanical resonator comprising a material having anisotropic directional elasticity characteristics. A shape of the resonator is such that a first distance in a first direction from a centroid of the resonator to a first point on a peripheral edge of the resonator is greater than a second distance in a second direction from the centroid to a second different point on the edge. This is true for every first direction and every second direction wherein the material has a lesser modulus of elasticity in the first direction than the second direction.

    摘要翻译: 包括具有各向异性方向弹性特性的材料的微机电谐振器。 谐振器的形状使得从谐振器的质心到谐振器的周边边缘上的第一点的第一方向上的第一距离大于从质心到第二不同点的第二方向上的第二距离 在边缘。 对于每个第一方向和每第二方向都是如此,其中材料在第一方向上具有比第二方向更小的弹性模量。

    MEMS RESONATOR
    7.
    发明申请
    MEMS RESONATOR 有权
    MEMS谐振器

    公开(公告)号:US20110063052A1

    公开(公告)日:2011-03-17

    申请号:US12993486

    申请日:2009-05-08

    IPC分类号: H03H9/02 H05K13/00

    摘要: A micro-electromechanical resonator comprising a material having anisotropic directional elasticity characteristics. A shape of the resonator is such that a first distance in a first direction from a centroid of the resonator to a first point on a peripheral edge of the resonator is greater than a second distance in a second direction from the centroid to a second different point on the edge. This is true for every first direction and every second direction wherein the material has a lesser modulus of elasticity in the first direction than the second direction.

    摘要翻译: 包括具有各向异性方向弹性特性的材料的微机电谐振器。 谐振器的形状使得从谐振器的质心到谐振器的周边边缘上的第一点的第一方向上的第一距离大于从质心到第二不同点的第二方向上的第二距离 在边缘。 对于每个第一方向和每第二方向都是如此,其中材料在第一方向上具有比第二方向更小的弹性模量。

    HIGH-Q DISK NANO RESONATOR DEVICE AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    HIGH-Q DISK NANO RESONATOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    高Q盘纳米谐振器装置及其制造方法

    公开(公告)号:US20090315644A1

    公开(公告)日:2009-12-24

    申请号:US12142487

    申请日:2008-06-19

    IPC分类号: H03H9/00 H01L21/00

    CPC分类号: H03H9/2436 H03H2009/0237

    摘要: A nanoresonator device with high quality factor and method for fabricating the same is disclosed herein. The nanoresonator device generally includes an input electrode, an output electrode, a nanoresonator anchored at its motionless nodal points of its resonance modes by support beam(s) and/or anchor. The nanoresonator device can be fabricated on various wafers including a silicon on insulator (SOI) wafer, which includes an insulating layer and a heavily doped silicon layer. The nano structures with high quality factor can be patterned on a film utilizing nano fabrication tools and the patterned structures can be utilized as a mask to form permanent nano structures on the silicon layer by reactive ion etching (RIE). The insulating layer can be removed to form the anchor beams and a cavity by wet etching utilizing an etching solution.

    摘要翻译: 本文公开了具有高质量因素的纳米谐振器器件及其制造方法。 纳米谐振器装置通常包括输入电极,输出电极,通过支撑束和/或锚固在其谐振模式的静止节点处的纳米谐振器。 可以在包括绝缘层和重掺杂硅层的绝缘体上硅(SOI)晶片的各种晶片上制造纳米谐振器器件。 具有高质量因子的纳米结构可以利用纳米制造工具在膜上图案化,并且图案化结构可以用作掩模,以通过反应离子蚀刻(RIE)在硅层上形成永久性纳米结构。 可以通过使用蚀刻溶液的湿蚀刻来去除绝缘层以形成锚梁和空腔。