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    OPTOELECTRONIC DEVICE
    1.
    发明公开
    OPTOELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20230197869A1

    公开(公告)日：2023-06-22

    申请号：US18052325

    申请日：2022-11-03

    Applicant: OXFORD UNIVERSITY INNOVATION LIMITED

    Inventor： HENRY JAMES SNAITH ,  EDWARD JAMES WILLIAM CROSSLAND ,  ANDREW HEY ,  JAMES BALL ,  MICHAEL LEE ,  PABLO DOCAMPO

    IPC: H01L31/036 ,  C23C14/06 ,  H10K30/15 ,  H10K85/00 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0725 ,  H01L31/18

    CPC classification number: H01L31/036 ,  C23C14/06 ,  H01L31/0725 ,  H01L31/1864 ,  H01L31/1884 ,  H01L31/022466 ,  H01L31/035272 ,  H10K30/15 ,  H10K30/151 ,  H10K85/00 ,  H10K71/40 ,  Y02E10/549

    Abstract: The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p- type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer dis -posed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.

    Optoelectronic device comprising perovskites
    4.
    发明授权
    Optoelectronic device comprising perovskites 有权

    公开(公告)号：US11908962B2

    公开(公告)日：2024-02-20

    申请号：US17653795

    申请日：2022-03-07

    Applicant: OXFORD UNIVERSITY INNOVATION LIMITED

    Inventor： Henry Snaith ,  Michael Lee

    IPC: H01L31/0264 ,  H10K30/10 ,  H10K30/15 ,  H10K85/00 ,  H01G9/20 ,  H10K102/10 ,  H01L31/0256

    CPC classification number: H01L31/0264 ,  H01G9/2004 ,  H10K30/10 ,  H10K30/151 ,  H10K85/00 ,  H01G9/2036 ,  H01L2031/0344 ,  H10K30/15 ,  H10K2102/102 ,  Y02E10/549 ,  Y02P70/50

    Abstract: The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.

    PEROVSKITE TANDEM SOLAR CELLS BASED ON A TUNNELING LAYER OF TWO-DIMENSIONAL LAYERED METAL CARBIDES AND METAL NITRIDES
    9.
    发明公开
    PEROVSKITE TANDEM SOLAR CELLS BASED ON A TUNNELING LAYER OF TWO-DIMENSIONAL LAYERED METAL CARBIDES AND METAL NITRIDES 审中-公开

    公开(公告)号：US20240292637A1

    公开(公告)日：2024-08-29

    申请号：US18652841

    申请日：2024-05-02

    Applicant: HEFEI UNIVERSITY OF TECHNOLOGY

    Inventor： Yang JIANG ,  Jingting YANG ,  Guoqing TONG

    IPC: H10K30/40 ,  H10K30/15 ,  H10K30/57 ,  H10K71/12

    CPC classification number: H10K30/40 ,  H10K30/15 ,  H10K30/57 ,  H10K71/125

    Abstract: The invention relates to a perovskite tandem solar cell based on a tunneling layer of two-dimensional layered metal carbides and metal nitrides, the tunneling junction composite layer is prepared by using two-dimensional layered metal carbides and metal nitrides, a dense layer is arranged on one side of the tunneling junction composite layer, and a transport layer is arranged on the other side. The two-dimensional layered metal carbide and metal nitride materials are selected from graphene, Ti3C2Tx, Mo2CTx, V2CTx, Nb2CTx and Ti2CTx. The tunneling junction structure of the invention can effectively reduce the light loss in the tandem solar cell and the interface recombination of the tandem cell, which can significantly improve the photocurrent generation and charge transfer of the perovskite/perovskite tandem solar cell, and improve the power conversion efficiency of the perovskite/perovskite tandem solar cell.

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