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    Cement kiln burner device and method for operating the same
    1.
    发明授权
    Cement kiln burner device and method for operating the same 有权

    公开(公告)号：US11306915B2

    公开(公告)日：2022-04-19

    申请号：US16643155

    申请日：2018-09-26

    申请人： Taiheiyo Cement Corporation

    发明人： Yuya Sano ,  Kana Horiba ,  Kouichi Naitou

    IPC分类号： F23D99/00 ,  F23D1/02 ,  F23L1/00 ,  F27B7/34 ,  F27D99/00

    摘要： A cement kiln burner device includes a powdered-solid-fuel flow channel having means for swirling a powdered-solid-fuel flow; a first air flow channel placed inside the powdered-solid-fuel flow channel to be adjacent to the powdered-solid-fuel flow channel having means for swirling an air flow; a second air flow channel placed in an outermost side outside the powdered-solid-fuel flow channel having means for straightly forwarding an air flow; and a combustible-solid-waste flow channel placed inside the first air flow channel. The second air flow channel is divided in a circumferential direction into four or more opening portions adapted to form ports for injecting air flows, and is configured to control flow rates of the air flows ejected from the opening portions, independently for each opening portion.

    COMBUSTIBLE WASTE INJECTION DEVICE AND METHOD FOR OPERATING THE SAME
    2.
    发明申请
    COMBUSTIBLE WASTE INJECTION DEVICE AND METHOD FOR OPERATING THE SAME 有权

    公开(公告)号：US20210054996A1

    公开(公告)日：2021-02-25

    申请号：US16976724

    申请日：2019-08-14

    申请人： Taiheiyo Cement Corporation

    发明人： Yuya SANO ,  Kouichi NAITOU ,  Hidenori TSUKIDATE ,  Hideyuki SUGAYA

    IPC分类号： F23G5/20 ,  F23G5/44 ,  F27B7/34

    摘要： There is provided a combustible waste injection device and a method for operating the same which can suppress a landing combustion of a combustible waste and suppress excessive change of a flame state from a cement kiln burner even if a rate of using the combustible waste fluctuates. A combustible waste injection device according to the present invention has a combustible waste flow channel which is arranged in an inner side of the air flow channel in an innermost shell, is installed in parallel to an axial direction of the cement kiln burner device and is provided for flow feeding a combustible waste flow, and the combustible waste flow channel has an inclined surface having a rising slope toward the injection port near the injection port in such a manner that a flow channel width in a vertical direction is narrowed toward the injection port.

    Material Heating Device
    4.
    发明申请
    Material Heating Device 审中-公开

    公开(公告)号：US20190093017A1

    公开(公告)日：2019-03-28

    申请号：US16185424

    申请日：2018-11-09

    申请人： Shuhong ZHU

    发明人： Shuhong ZHU

    IPC分类号： C10B5/10 ,  F27B7/14 ,  F27B7/20 ,  F27B7/34 ,  F27B7/36 ,  F27B7/42 ,  C10B27/06 ,  C10B41/00 ,  C10B47/30 ,  C10B57/14

    摘要： A material heating device comprises a rotary kiln, a plurality of heat exchange tubes, a hot air hood, a high-temperature gas input mechanism, an exhaust-gas collecting chamber, and an exhaust-gas output pipeline. The rotary kiln is provided with a material feed end and a material discharge end. The heat exchange tubes are in the rotary kiln. The hot air hood is outside the rotary kiln. The air inlet ends of the heat exchange tubes communicate with the hot air hood, and the air outlet ends of the heat exchange tubes communicate with the exhaust-gas collecting chamber. The exhaust-gas collecting chamber communicates with the exhaust-gas output pipeline. The hot air hood communicates with the high-temperature gas input mechanism, and the cavity between the heat exchange tubes and the heat insulation layer of the rotary kiln is a material channel. The heat exchange tubes are directly in contact with the material.

    ROTATING FURNACE INERTING
    5.
    发明申请
    ROTATING FURNACE INERTING 审中-公开

    公开(公告)号：US20180017328A1

    公开(公告)日：2018-01-18

    申请号：US15207686

    申请日：2016-07-12

    申请人： Air Liquide Industrial U.S. LP

    发明人： Stewart C. JEPSON

    IPC分类号： F27D3/16 ,  F27B7/10 ,  F27B7/34 ,  F27D7/02 ,  F27B7/06 ,  F27B7/36 ,  F27B7/20

    CPC分类号： F27D3/16 ,  F27B7/06 ,  F27B7/10 ,  F27B7/2083 ,  F27B7/34 ,  F27B7/362 ,  F27B2007/367 ,  F27D7/02 ,  F27D2003/167 ,  F27D2007/023

    摘要： A gas inerting system and method is provided. This system includes a rotary melting furnace with a furnace barrel, a burner, and a charge of metal to be melted; and an injection manifold with a plurality of injection orifices. The burner is configured to produce a flame directed into the furnace barrel, and the plurality of injection orifices are configured to disperse inert gas streams into the furnace barrel, into an inerting region between the burner flame and the charge of aluminum. The metal to be melted may be aluminum. The method of inerting includes rotating the rotary furnace and introducing heat into the furnace barrel by generating the flame, thereby beginning a melt cycle, then introducing the inert gas streams into an inlet to the injection manifold, thereby directing the inert gas streams through the injection orifices and into the inerting region, after a predetermined condition has been met.

    Method and System for the Thermal Processing of a Material
    7.
    发明申请
    Method and System for the Thermal Processing of a Material 审中-公开
    材料热处理方法与系统

    公开(公告)号：US20150211794A1

    公开(公告)日：2015-07-30

    申请号：US14609692

    申请日：2015-01-30

    申请人： EISENMANN SE

    发明人： Carolina Acuna Caro ,  Uwe Neumann

    IPC分类号： F27B7/08 ,  F27B7/14 ,  F27B7/34 ,  F27B7/10

    CPC分类号： F27B7/08 ,  F27B7/10 ,  F27B7/14 ,  F27B7/20 ,  F27B7/34

    摘要： A method and system for thermal processing of a material conveyed in a rotary kiln with a rotatable kiln drum, the drum wall of which delimits a heatable drum chamber, from a drum inlet to a drum outlet of the kiln drum. The drum chamber is heated directly by conducting a heating gas into the drum chamber. The drum chamber is also heated indirectly by warming the drum wall at least in areas.

    摘要翻译： 一种用于在回转窑中输送的材料的热处理的方法和系统，其中可旋转窑鼓（其鼓壁限定可加热鼓室）从鼓入口到窑鼓的鼓出口。 通过将加热气体引入鼓室中直接加热鼓室。 鼓室也通过至少在区域中加热鼓壁间接加热。

    Fabrication method for semiconductor device and manufacturing apparatus for the same
    8.
    发明申请
    Fabrication method for semiconductor device and manufacturing apparatus for the same 有权
    半导体装置及其制造装置的制造方法

    公开(公告)号：US20050124123A1

    公开(公告)日：2005-06-09

    申请号：US10980232

    申请日：2004-11-04

    申请人： Takaharu Itani ,  Takayuki Ito ,  Kyoichi Suguro

    发明人： Takaharu Itani ,  Takayuki Ito ,  Kyoichi Suguro

    IPC分类号： H01L21/265 ,  H01L21/324 ,  H01L21/336 ,  H01L29/78 ,  F27B3/20 ,  F27B7/34 ,  F27B9/36 ,  H01L21/26 ,  H01L21/42 ,  H01L21/477

    CPC分类号： H01L21/26533 ,  H01L21/324 ,  H01L29/6659

    摘要： A shallow p-n junction diffusion layer having a high activation rate of implanted ions, low resistivity, and a controlled leakage current is formed through annealing. Annealing after impurities have been doped is carried out through light irradiation. Those impurities are activated by annealing at least twice through light irradiation after doping impurities to a semiconductor substrate 11. The light radiations are characterized by usage of a W halogen lamp RTA or a flash lamp FLA except for the final light irradiation using a flash lamp FLA. Impurity diffusion maybe controlled to a minimum, and crystal defects, which have developed in an impurity doping process, may be sufficiently reduced when forming ion implanted layers in a source and a drain extension region of the MOSFET or ion implanted layers in a source and a drain region.

    摘要翻译： 通过退火形成具有注入离子的高激活速率，低电阻率和受控的漏电流的浅p-n结扩散层。 通过光照射进行杂质掺杂后的退火。 这些杂质通过在将杂质掺杂到半导体衬底11之后通过光照射退火至少两次来激活。光辐射的特征在于使用W卤素灯RTA或闪光灯FLA，除了使用闪光灯FLA的最终光照射 。 杂质扩散可以被控制到最小，并且当在MOSFET的源极和漏极延伸区域中形成离子注入层时，在杂质掺杂过程中已经发展出的晶体缺陷可以被充分地减小，或者源中的离子注入层和 漏区。