公开(公告)号：US06867086B1

公开(公告)日：2005-03-15

申请号：US10389164

申请日：2003-03-13

申请人： David Chen ,  Robert A. Shepherd, Jr. ,  Vishal Gauri ,  George D. Papasouliotis

发明人： David Chen ,  Robert A. Shepherd, Jr. ,  Vishal Gauri ,  George D. Papasouliotis

IPC分类号： C23C16/04 ,  C23C16/40 ,  H01L21/311 ,  H01L21/316 ,  H01L21/762 ,  H01L21/338 ,  H01L21/31 ,  H01L21/336 ,  H01L21/76 ,  H01L21/439

CPC分类号： H01L21/02164 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/31116 ,  H01L21/31612 ,  H01L21/76224

摘要： High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. This deposition part of the process may involve the use of any suitable high density plasma chemical vapor deposition (HDP CVD) chemistry. The etch back part of the process involves an integrated multi-step (for example, two-step) procedure including an anisotropic dry etch followed by an isotropic dry etch. The all dry deposition and etch back process in a single tool increases throughput and reduces handling of wafers resulting in more efficient and higher quality gap fill operations.

摘要翻译： 高密度等离子体化学气相沉积和回蚀工艺，其可以填充高纵横比（通常至少5:1，例如6:1），窄宽度（通常小于0.13微米，例如0.1微米或更小）的间隙，显着降低 提供了空隙或弱点的发生。 该方法的该沉积部分可以涉及使用任何合适的高密度等离子体化学气相沉积（HDP CVD）化学。 该方法的回蚀部分涉及包括各向异性干蚀刻以及各向同性干法蚀刻的集成多步骤（例如两步）程序。 在单一工具中的全部干沉积和回蚀工艺增加了生产量并减少了晶片的处理，从而产生了更有效和更高质量的间隙填充操作。