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    Solid state image pickup device
    1.
    发明授权
    Solid state image pickup device 有权
    固态图像拾取装置

    公开(公告)号：US06504188B1

    公开(公告)日：2003-01-07

    申请号：US09708811

    申请日：2000-11-08

    申请人： Yasushi Maruyama ,  Dai Sugimoto

    发明人： Yasushi Maruyama ,  Dai Sugimoto

    IPC分类号： H01L29768

    CPC分类号： H01L27/14812 ,  H01L27/14627 ,  H01L27/14843

    摘要： A solid image pickup device that can be operated at high speed and can suppress the dark current with high sensitivity, and a process for producing the same are provided. The solid image pickup device comprises a shunt wiring layers 7a and 7d of the transfer electrodes are formed with an accumulated film of a high melting point metal 13 and a nitride or an oxide of a high melting point metal 14. The solid image pickup device is produced by the process comprising a step of forming, on transfer electrodes 3a and 4b, shunt wiring layers 7a and 7d comprising an accumulated film comprising a nitride layer or an oxide layer of a high melting point metal 14 having a high melting point metal layer 13 formed thereon, and a step of conducting, after forming a dielectric film 36 to have a concave part on a sensor 2, a heat treatment at a temperature of from 800 to 900° C.

    摘要翻译： 提供可以高速操作并且可以高灵敏度地抑制暗电流的固体图像拾取装置及其制造方法。 固体摄像装置包括转印电极的分流布线层7a和7d，其形成有高熔点金属13的积聚膜和高熔点金属14的氮化物或氧化物。固体图像拾取装置是 该方法包括在转移电极3a和4b上形成分流布线层7a和7d的步骤，该布线层7a和7d包括含有氮化物层或具有高熔点金属层13的高熔点金属14的氧化物层的积聚膜 形成在其上的步骤，以及在形成介电膜36以在传感器2上具有凹形部分之后，在800-900℃的温度下进行热处理的步骤。

    Solid-state imaging device and method for manufacturing the same
    2.
    发明授权
    Solid-state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US08993369B2

    公开(公告)日：2015-03-31

    申请号：US13181630

    申请日：2011-07-13

    申请人： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    发明人： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC分类号： H01L21/00 ,  H01L27/146

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    摘要： A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.

    摘要翻译： 一种固体摄像装置的制造方法，其特征在于，在基板上形成有硅传感器部，在所述光传感器部中包含第一导电型区域，在所述硅层中形成第二导电型区域 通过离子注入从固态成像装置的后表面注入; 在硅层上形成配线部分; 并且支撑基板被接合到布线部分，其中，固态成像装置被配置为经由固态成像装置的后表面接收入射光。

    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    6.
    发明申请
    SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    固态成像装置及其制造方法

    公开(公告)号：US20110269258A1

    公开(公告)日：2011-11-03

    申请号：US13181630

    申请日：2011-07-13

    申请人： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    发明人： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC分类号： H01L31/18

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    摘要： A method for manufacturing a solid-state imaging device in which: photo sensor portions are formed in a silicon layer over a substrate, a first conductivity type region being included in the photo sensor portions and a second conductivity type region being formed in the silicon layer implanted from a rear-surface of the solid-state imaging device by ion implantation; a wiring portion is formed above the silicon layer; and a supporting substrate is bonded to the wiring portion, wherein, the solid-state imaging device is configured for receiving incident light via the rear-surface of the solid-state imaging device.

    摘要翻译： 一种固体摄像装置的制造方法，其特征在于，在基板上形成有硅传感器部，在所述光传感器部中包含第一导电型区域，在所述硅层中形成第二导电型区域 通过离子注入从固态成像装置的后表面注入; 在硅层上形成配线部分; 并且支撑基板被接合到布线部分，其中，固态成像装置被配置为经由固态成像装置的后表面接收入射光。

    Solid state image pickup device
    7.
    发明授权
    Solid state image pickup device 有权
    固态图像拾取装置

    公开(公告)号：US07687831B2

    公开(公告)日：2010-03-30

    申请号：US10382058

    申请日：2003-03-05

    申请人： Hiroaki Fujita ,  Ryoji Suzuki ,  Nobuo Nakamura ,  Yasushi Maruyama

    发明人： Hiroaki Fujita ,  Ryoji Suzuki ,  Nobuo Nakamura ,  Yasushi Maruyama

    IPC分类号： H01L27/148 ,  H01L31/113 ,  H01L31/00 ,  H01L31/06

    CPC分类号： H01L27/14609 ,  H01L27/1463 ,  H01L27/14643

    摘要： P type semiconductor well regions 8 and 9 for device separation are provided in an upper and lower two layer structure in conformity with the position of a high sensitivity type photodiode PD, and the first P type semiconductor well region 8 at the upper layer is provided in the state of being closer to the pixel side than an end portion of a LOCOS layer 1A, for limiting a dark current generated at the end portion of the LOCOS layer 1A. In addition, the second P type semiconductor well region 9 at the lower layer is formed in a narrow region receding from the photodiode PD, so that the depletion layer of the photodiode PD is prevented from being obstructed, and the depletion is secured in a sufficiently broad region, whereby enhancement of the sensitivity of the photodiode PD can be achieved.

    摘要翻译： 以与高灵敏度型光电二极管PD的位置一致的上下两层结构设置用于器件分离的P型半导体阱区域8和9，并且上层的第一P型半导体阱区域8设置在 比LOCOS层1A的端部更靠近像素侧的状态，用于限制在LOCOS层1A的端部处产生的暗电流。 此外，下层的第二P型半导体阱区9形成在从光电二极管PD后退的窄区域中，从而防止光电二极管PD的耗尽层受到阻碍，并且充分确保耗尽 从而可以实现光电二极管PD的灵敏度的提高。

    Solid-state imaging device and method for manufacturing the same
    9.
    发明授权
    Solid-state imaging device and method for manufacturing the same 有权
    固态成像装置及其制造方法

    公开(公告)号：US07659183B2

    公开(公告)日：2010-02-09

    申请号：US11466523

    申请日：2006-08-23

    申请人： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    发明人： Yasushi Maruyama ,  Hideshi Abe ,  Hiroyuki Mori

    IPC分类号： H01L21/30

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14689

    摘要： A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can be manufactured with a high yield ratio are provided.The solid-state imaging device includes at least a silicon layer formed with a photo sensor portion and a wiring layer formed on the front-surface side of the silicon layer, and in which light L is made to enter from the rear-surface side opposite to the front-surface side of the silicon layer and the thickness of the silicon layer 4 is 10 μm or less. Also, the method for manufacturing the solid-state imaging device at least includes the steps of: forming a semiconductor region of a photo sensor portion in a silicon layer of a layered substrate in which a silicon substrate, an intermediate layer and a silicon layer are laminated; bonding a first supporting substrate onto the silicon layer; removing the silicon substrate and the intermediate layer; forming thereafter a wiring portion above the silicon layer; bonding a second supporting substrate onto the wiring portion, and removing the first supporting substrate to make the silicon layer exposed.

    摘要翻译： 具有高灵敏度的固态成像装置和获得小型化像素的结构，以及其中界面稳定的固态成像装置的制造方法，光谱特性优异并且可以用 提供高产率。 固态成像装置至少包括形成有光传感器部分的硅层和形成在硅层的表面侧的布线层，并且使光L从相对的背面侧进入 到硅层的表面侧，硅层4的厚度为10μm以下。 此外，制造固态成像装置的方法至少包括以下步骤：在硅衬底，中间层和硅层的层叠衬底的硅层中形成光电传感器部分的半导体区域 层压; 将第一支撑衬底接合到所述硅层上; 去除硅衬底和中间层; 然后形成硅层上方的布线部分; 将第二支撑基板接合到布线部分上，并且移除第一支撑基板以使硅层暴露。

    Solid-state imaging device and manufacturing method thereof
    10.
    发明授权
    Solid-state imaging device and manufacturing method thereof 有权
    固态成像装置及其制造方法

    公开(公告)号：US07105867B2

    公开(公告)日：2006-09-12

    申请号：US11073865

    申请日：2005-03-08

    申请人： Yasushi Maruyama ,  Hideshi Abe

    发明人： Yasushi Maruyama ,  Hideshi Abe

    IPC分类号： H01L31/0328

    CPC分类号： H01L27/14623 ,  H01L27/14603 ,  H01L27/1462 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14683 ,  H01L27/14806 ,  H01L31/02164 ,  H01L31/022408 ,  Y10S257/929

    摘要： There is a demand of a solid-state imaging device capable of being driven at a high speed and in which the shading of sensitivity and illuminance defect can be prevented from being caused. A solid-state imaging device (20) comprises a light-receiving sensor section disposed on the surface layer portion of a substrate (21) for performing a photoelectric conversion, a charge transfer section for transferring a signal charge read out from the light-receiving sensor section, a transfer electrode (27) (28) made of polysilicon formed on a substrate (21) at its position approximately above the charge transfer section through an insulating film (26), and an interconnection made of polysilicon and interconnected to the transfer electrode (27) (28). At least one of the polysilicon transfer electrode (27)(28) and the interconnection is formed on a polysilicon layer (27a) (28a) by selectively depositing a high-melting point metal having a resistance value lower than that of polysilicon. Also, there is provided a solid-state imaging device in which a fluctuation of a work function of the transfer electrode can be avoided and a manufacturing method thereof. The solid-state imaging device (10) comprises a buffer layer (1) containing a metal silicide layer (16) is formed between the transfer electrodes (3), (4) and a shunt interconnection layer (7) formed of a metal layer.

    摘要翻译： 需要能够高速驱动并且可以防止引起灵敏度和照度缺陷的阴影的固态成像装置。 固态成像装置（20）包括设置在用于进行光电转换的基板（21）的表层部分上的光接收传感器部分，用于传送从光接收读出的信号电荷的电荷转移部分 传感器部分，通过绝缘膜（26）在其位于大致高于电荷转移部分的位置处形成在基板（21）上的由多晶硅制成的转移电极（27）（28），以及由多晶硅制成并且互连到转移 电极（27）（28）。 通过选择性地沉积具有比多晶硅低的电阻值的高熔点金属，在多晶硅层（27a）（28a）上形成多晶硅转移电极（27）（28）和互连中的至少一个。 另外，提供了可以避免转移电极的功函数波动的固态成像装置及其制造方法。 固态成像装置（10）包括在转移电极（3），（4）和由金属层形成的分流互连层（7）之间形成有包含金属硅化物层（16）的缓冲层（1） 。