公开(公告)号：US20230217136A1

公开(公告)日：2023-07-06

申请号：US17928249

申请日：2021-05-28

申请人： VOXELSENSOR SRL

发明人： Ward VAN DER TEMPEL ,  Johannes Willern PEETERS ,  André Bernard MIODEZKY

IPC分类号： H04N25/773 ,  H04N25/441 ,  H04N25/626

CPC分类号： H04N25/773 ,  H04N25/441 ,  H04N25/626

摘要： The present invention relates to a high-speed imaging sensor system in which single-photon detectors are provided in an architecture adapted for high-speed processing of the output of the detectors with high reliability to filter out false positives.

公开(公告)号：US12096143B2

公开(公告)日：2024-09-17

申请号：US17981258

申请日：2022-11-04

申请人： Teledyne FLIR Commercial Systems, Inc.

发明人： Joseph Kostrzewa

IPC分类号： H04N25/626 ,  H04N5/33 ,  H04N25/683

CPC分类号： H04N25/626 ,  H04N5/33 ,  H04N25/683

摘要： Techniques for facilitating burn-in mitigation and associated imaging systems and methods are provided. In one example, a method applying a bias signal to a sensor array of an imaging device to increase a temperature of the sensor array to perform burn-in mitigation. The method further includes reducing the temperature of the sensor array. The method further includes determining whether a burn-in is present in the sensor array. Related systems and devices are also provided.

公开(公告)号：US20230187469A1

公开(公告)日：2023-06-15

申请号：US17998522

申请日：2021-04-02

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： SHUNSUKE MARUYAMA

IPC分类号： H01L27/146 ,  H04N25/778 ,  H04N25/78 ,  H04N25/79 ,  H04N25/626 ,  H01L25/065

CPC分类号： H01L27/14643 ,  H04N25/778 ,  H04N25/78 ,  H04N25/79 ,  H04N25/626 ,  H01L27/14636 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14612 ,  H01L25/0657

摘要： Provided is a solid-state imaging element with which it is possible to minimize crosstalk between different pixel columns while suppressing a decrease in quantum efficiency of a photoelectric conversion unit due to a pixel separating section. The solid-state imaging element includes a plurality of pixels arranged in a two-dimensional matrix in the X direction and the Y direction and including a photoelectric conversion unit (N-type semiconductor thin film) containing a compound semiconductor. In addition, the solid-state imaging element includes a pixel separating section disposed only at a pixel boundary extending in the X direction.

公开(公告)号：US20230308782A1

公开(公告)日：2023-09-28

申请号：US18187274

申请日：2023-03-21

申请人： Sony Semiconductor Solutions Corporation

发明人： Takeshi Takeda

IPC分类号： H04N25/75 ,  H04N25/59 ,  H04N25/77 ,  H04N25/626 ,  H04N25/709 ,  H04N25/771

CPC分类号： H04N25/75 ,  H04N25/59 ,  H04N25/626 ,  H04N25/709 ,  H04N25/77 ,  H04N25/771

摘要： A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

公开(公告)号：US20230307483A1

公开(公告)日：2023-09-28

申请号：US18186771

申请日：2023-03-20

申请人： CANON KABUSHIKI KAISHA

发明人： SATOSHI KUMAKI

IPC分类号： H01L27/146 ,  H04N25/772 ,  H04N25/626

CPC分类号： H01L27/14643 ,  H01L27/14627 ,  H04N25/772 ,  H04N25/626 ,  H01L27/14636 ,  H01L27/14612 ,  H01L27/14641

摘要： A photoelectric conversion device includes a first photoelectric conversion element, a second photoelectric conversion element, a microlens that guides incident light to the first photoelectric conversion element and the second photoelectric conversion element, a floating diffusion to which charges accumulated in at least one of the first photoelectric conversion element and the second photoelectric conversion element are transferred, and a transistor that, when switched on, adds a capacitance to a node of the floating diffusion. First and second reading operations are performed. In the first reading operation, a signal based on charges transferred to the floating diffusion is read at a first conversion gain caused by a state where the transistor is in an off-state. In the second reading operation, a signal based on charges transferred to the floating diffusion is read at a second conversion gain caused by a state where the transistor is in an on-state.

公开(公告)号：US12114088B2

公开(公告)日：2024-10-08

申请号：US18187274

申请日：2023-03-21

申请人： Sony Semiconductor Solutions Corporation

发明人： Takeshi Takeda

IPC分类号： H04N25/75 ,  H04N25/59 ,  H04N25/626 ,  H04N25/709 ,  H04N25/77 ,  H04N25/771

CPC分类号： H04N25/75 ,  H04N25/59 ,  H04N25/626 ,  H04N25/709 ,  H04N25/77 ,  H04N25/771

摘要： A solid-state imaging device includes a plurality of pixels in a two-dimensional array. Each pixel includes a photoelectric conversion element that converts incident light into electric charge, and a charge holding element that receives the electric charge from the photoelectric conversion element, and transfers the electric charge to a corresponding floating diffusion. The charge holding element further includes a plurality of electrodes.

公开(公告)号：US20230353893A1

公开(公告)日：2023-11-02

申请号：US18245391

申请日：2021-09-10

申请人： Sony Semiconductor Solutions Corporation

发明人： Hirotaka Niikura ,  Yoshitaka Miyatani ,  Atsutake Kosuge ,  Daiki Nakagawa

IPC分类号： H04N25/53 ,  B05B5/00 ,  H04N25/626

CPC分类号： H04N25/53 ,  B05B5/005 ,  H04N25/626

摘要： The present technology relates to an information processing apparatus and an information processing system that enable accurate detection of a droplet from a dispenser.
The information processing apparatus includes: an event sensor including a pixel configured to photoelectrically convert an optical signal and output a pixel signal, the event sensor being configured to output a temporal luminance change of the optical signal as an event signal on the basis of the pixel signal; and a processor configured to detect a droplet injected from the dispenser on the basis of the event signal. The present technology can be applied to, for example, a dispenser control system that controls a dispenser, and the like.

公开(公告)号：US11792541B2

公开(公告)日：2023-10-17

申请号：US17901994

申请日：2022-09-02

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Taiichiro Watanabe ,  Tetsuji Yamaguchi ,  Yusuke Sato ,  Fumihiko Koga

IPC分类号： H04N25/626 ,  H10K39/32

CPC分类号： H04N25/626 ,  H10K39/32

摘要： A solid-state imaging device according to an embodiment of the disclosure includes a first electrode, a second electrode, a photoelectric conversion layer, and a voltage applier. The first electrode includes a plurality of electrodes independent from each other. The second electrode is disposed opposite to the first electrode. The photoelectric conversion layer is disposed between the first electrode and the second electrode. The voltage applier applies different voltages to at least one of the first electrode or the second electrode during a charge accumulation period and a charge non-accumulation period.

公开(公告)号：US20230328388A1

公开(公告)日：2023-10-12

申请号：US18324385

申请日：2023-05-26

申请人： ZHEJIANG DAHUA TECHNOLOGY CO., LTD.

发明人： Erli LU ,  Lu KUANG

IPC分类号： H04N23/741 ,  H04N23/73 ,  H04N25/626

CPC分类号： H04N23/73 ,  H04N23/741 ,  H04N25/626

摘要： A method for image acquisition may be provided. The method may include sending an exposure instruction to a plurality of image sensors. The method may further include controlling exposure time periods of at least one exposure group to obtain a plurality of frame images based on the exposure instruction. For each of the at least one exposure group, the exposure group may include a plurality of exposure regions corresponding to the plurality of image sensors, imaging positions corresponding to the plurality of exposure regions may be the same, and the exposure instruction may cause that a relationship between midpoints of exposure time periods of the plurality of exposure regions in the exposure group satisfies a condition.