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公开(公告)号：US20240182770A1
公开(公告)日：2024-06-06
申请号：US18413405
申请日：2024-01-16
IPC分类号： C09K5/14 , C04B35/587 , H01L23/373
CPC分类号： C09K5/14 , C04B35/587 , H01L23/3735 , C04B2235/3873 , C04B2235/723 , C04B2235/786 , C04B2235/85 , C04B2235/9607
摘要： According to an embodiment, a highly thermally conductive silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. A thermal conductivity of the silicon nitride sintered body is not less than 80 W/(m·K). An average value of solid solution oxygen amounts of the silicon nitride crystal grains existing in a 20 μm×20 μm unit area in any cross section is not more than 0.2 wt %. An average value of major diameters of the silicon nitride crystal grains existing in a 50 μm×50 μm unit area in any cross section is not less than 1 μm and not more than 10 μm. An average of aspect ratios of the silicon nitride crystal grains existing in the 50 μm×50 μm unit area is not less than 2 and not more than 10.
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2.发明公开公开(公告)号：US20230391677A1
公开(公告)日：2023-12-07
申请号：US18451438
申请日：2023-08-17
发明人： Shoya SANO , Katsuyuki AOKI , Kai FUNAKI , Kazuya OOKUBO
IPC分类号： C04B35/587 , C04B35/63 , C04B35/626 , C04B35/64 , F16C19/06
CPC分类号： C04B35/587 , C04B35/6303 , C04B35/6261 , C04B35/64 , F16C19/06 , C04B2235/3873 , C04B2235/3225 , C04B2235/3217 , C04B2235/3232 , C04B2235/3865 , C04B2235/3258 , C04B2235/85 , C04B2235/96 , F16C2206/60
摘要： According to an embodiment, a silicon nitride sintered body includes silicon nitride crystal grains and a grain boundary phase. In a case where Raman spectroscopy of a 20 μm×20 μm region at any cross section of the silicon nitride sintered body is performed, seven or more peaks are detected within a range of not less than 400 cm−1 and not more than 1200 cm−1, and the most intense peak of the seven or more peaks is not in a range of not less than 515 cm−1 and not more than 525 cm−1. Favorably, at least three of the seven or more peaks exist within a range of not less than 530 cm−1 and not more than 830 cm−1. It is favorable for at least one of the seven or more peaks to be within a range of not less than 440 cm−1 and not more than 460 cm−1.
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公开(公告)号：US20210088259A1
公开(公告)日：2021-03-25
申请号：US17092506
申请日：2020-11-09
申请人： CARBO Ceramics Inc.
发明人： Claude KRAUSE , Benjamin ELDRED , Steve CANOVA
IPC分类号： F24S70/16 , C04B35/628 , C04B35/63 , C04B35/64 , F24S80/20 , F24S20/20 , C04B33/04 , C04B35/111 , C04B35/486 , C04B35/18 , C04B35/565 , C04B35/622 , C04B35/587 , C04B35/14
摘要： Ceramic particles for use in a solar power tower and methods for making and using the ceramic particles are disclosed. The ceramic particle can include a sintered ceramic material formed from a mixture of a raw material and MnO. The sintered ceramic material can include about 0.01 wt % to about 10 wt % MnO, about 0.1 wt % to about 20 wt % Fe2O3, and about 0.01 wt % to about 10 wt % Mn2O3. The ceramic particle can have a size from about 8 mesh to about 170 mesh.
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公开(公告)号：US20190323112A1
公开(公告)日：2019-10-24
申请号：US16388087
申请日：2019-04-18
发明人： Sungbo Shim , Li Li
IPC分类号： C23C4/10 , C23C4/134 , C04B35/622 , C04B35/565 , C04B35/587 , C04B41/50 , C04B41/87 , C04B41/00 , C04B41/45
摘要： A composite bond coat may include a matrix and a reinforcing component. The matrix may be formed from silicon-based particles, and the reinforcing component includes silicon-based ceramic particles. The composite bond coat may be formed by introducing a precursor composition into a plume generated by a thermal spray gun to generate a thermal spray stream. The thermal spray stream may be directed at a major surface defined by a substrate of the component to form the composite bond coat. The precursor composition includes the matrix component and the reinforcing component.
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公开(公告)号：US10340886B2
公开(公告)日：2019-07-02
申请号：US15317563
申请日：2016-04-26
发明人： Keiichiro Geshi , Shigeru Nakayama
IPC分类号： H03H9/25 , C04B35/111 , B32B9/00 , H03H9/02 , H03H9/05 , H03H9/08 , H03H3/08 , B32B18/00 , C04B35/053 , C04B35/057 , C04B35/14 , C04B35/185 , C04B35/195 , C04B35/443 , C04B35/46 , C04B35/495 , C04B35/565 , C04B35/581 , C04B35/587
摘要： A ceramic substrate is formed of a polycrystalline ceramic and has a supporting main surface. The supporting main surface has a roughness of 0.01 nm or more and 3.0 nm or less in terms of Sa. The number of projections and depressions with a height of 1 nm or more in a square region with 50 μm sides on the supporting main surface is less than 5 on average, and the number of projections and depressions with a height of 2 nm or more in the square region is less than 1 on average.
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公开(公告)号：US10322934B2
公开(公告)日：2019-06-18
申请号：US15833113
申请日：2017-12-06
发明人： Noritaka Nakayama , Katsuyuki Aoki , Takashi Sano
IPC分类号： C04B35/584 , C01B21/068 , H01L23/15 , H01L23/373 , H05K1/03 , H01L23/498 , H05K1/02 , C04B35/587 , C04B35/593 , B32B18/00 , C04B35/626 , C04B35/632 , C04B35/634 , C04B35/638 , C04B35/63 , C04B35/64
摘要： A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.
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公开(公告)号：US09884762B2
公开(公告)日：2018-02-06
申请号：US15430920
申请日：2017-02-13
发明人： Noritaka Nakayama , Katsuyuki Aoki , Takashi Sano
IPC分类号： C04B35/584 , C01B21/068 , C04B35/587 , C04B35/626 , C04B35/63 , C04B35/632 , C04B35/64 , H01L23/498 , H01L23/373
CPC分类号： C01B21/068 , B32B18/00 , C01P2006/32 , C04B35/584 , C04B35/587 , C04B35/593 , C04B35/6263 , C04B35/6264 , C04B35/63 , C04B35/632 , C04B35/6342 , C04B35/63424 , C04B35/638 , C04B35/64 , C04B2235/3206 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/383 , C04B2235/3873 , C04B2235/5436 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/661 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/95 , C04B2235/96 , C04B2235/9607 , C04B2237/368 , H01L23/15 , H01L23/3731 , H01L23/3735 , H01L23/49838 , H01L23/49877 , H01L23/49894 , H01L2924/0002 , H05K1/0201 , H05K1/0306 , H01L2924/00
摘要： A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.
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8.发明申请公开(公告)号：US20170297141A1
公开(公告)日：2017-10-19
申请号：US15509592
申请日：2015-08-28
发明人： Isao IKEDA , Kai FUNAKI , Yutaka ABE
IPC分类号： B23K20/12 , B28B3/00 , C04B35/63 , C04B35/645 , C04B35/587 , C04B35/626
摘要： The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. It is preferable that the content of the additive component is 3% by mass or more and 12.5% by mass or less. It is also preferable that the additive component includes four or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. Due to above structure, there can be provided a welding tool member for friction stir welding having a high durability.
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9.发明授权公开(公告)号：US09663407B2
公开(公告)日：2017-05-30
申请号：US14896775
申请日：2014-06-11
发明人： Haruhiko Yamaguti
IPC分类号： C04B35/587 , C04B35/593 , F16C33/32
CPC分类号： C04B35/593 , C04B35/5935 , C04B2235/3217 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/3826 , C04B2235/3839 , C04B2235/3865 , C04B2235/3878 , C04B2235/3882 , C04B2235/3895 , C04B2235/5445 , C04B2235/549 , C04B2235/608 , C04B2235/767 , C04B2235/77 , C04B2235/85 , C04B2235/96 , C04B2235/963 , F16C33/32 , F16C2206/60
摘要： The present invention provides a silicon nitride wear resistant member comprising a silicon nitride sintered compact containing β-Si3N4 crystal grains as a main component, 2 to 4% by mass of a rare earth element in terms of oxide, 2 to 6% by mass of Al in terms of oxide, and 0.1 to 5% by mass of Hf in terms of oxide, wherein the silicon nitride sintered compact has rare earth-Hf—O compound crystals; in an arbitrary section, an area ratio of the rare earth-Hf—O compound crystals in a grain boundary phase per unit area of 30 μm×30 μm is 5 to 50%; and variation of the area ratios of the rare earth-Hf—O compound crystals between the unit areas is 10% or less. Due to above structure, there can be provided a wear resistant member comprising the silicon nitride sintered compact having an excellent wear resistance and processability.
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公开(公告)号：US09630846B2
公开(公告)日：2017-04-25
申请号：US15027829
申请日：2014-10-21
发明人： Noritaka Nakayama , Katsuyuki Aoki , Takashi Sano
IPC分类号： C04B35/584 , C01B21/068 , H01L23/15 , H01L23/373 , H05K1/03 , H05K1/02 , C04B35/587 , C04B35/593 , H01L23/498
CPC分类号： C01B21/068 , B32B18/00 , C01P2006/32 , C04B35/584 , C04B35/587 , C04B35/593 , C04B35/6263 , C04B35/6264 , C04B35/63 , C04B35/632 , C04B35/6342 , C04B35/63424 , C04B35/638 , C04B35/64 , C04B2235/3206 , C04B2235/3224 , C04B2235/3225 , C04B2235/3232 , C04B2235/3244 , C04B2235/383 , C04B2235/3873 , C04B2235/5436 , C04B2235/5445 , C04B2235/6025 , C04B2235/604 , C04B2235/656 , C04B2235/6565 , C04B2235/6567 , C04B2235/6584 , C04B2235/661 , C04B2235/723 , C04B2235/77 , C04B2235/786 , C04B2235/85 , C04B2235/95 , C04B2235/96 , C04B2235/9607 , C04B2237/368 , H01L23/15 , H01L23/3731 , H01L23/3735 , H01L23/49838 , H01L23/49877 , H01L23/49894 , H01L2924/0002 , H05K1/0201 , H05K1/0306 , H01L2924/00
摘要： A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.
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