Stabilised A/M/X materials
    8.
    发明授权

    公开(公告)号:US11820927B2

    公开(公告)日:2023-11-21

    申请号:US17259708

    申请日:2019-07-12

    摘要: The present invention relates to a method for preparing a stabilised crystalline A/M/X material comprising an oxide of formula [Z]pOq and a compound of formula [A]a[M]b[X]c, wherein [Z] comprises at least one element Z capable of forming an oxide with a band gap of at least 3 eV; p and q are positive numbers; [A] comprises one or more A cations; [M] comprises one or more M cations; [X] comprises one or more X anions; a is an integer from 1 to 6; b is an integer from 1 to 6; and c is an integer from 1 to 18. Often, the stabilised crystalline A/M/X material is a perovskite. The invention also provides a stabilised crystalline A/M/X material, which can be produced by the process of the invention. The invention further provides materials and devices containing the stabilised crystalline A/M/X material of the invention.