摘要:
Any metal having a low α-ray emission, the metal being any one of tin, silver, copper, zinc, or indium, wherein an emission of an α-ray after heating the metal at 100° C. in an atmosphere for six hours is 0.002 cph/cm2 or less. Any metal of tin, silver, copper, zinc and indium each including lead as an impurity is dissolved to prepare a hydrosulfate aqueous solution of the metal and lead sulfate is precipitated and removed in the solution. The lead sulfate is precipitated in the hydrosulfate aqueous solution by adding a lead nitrate aqueous solution including lead having an α-ray emission of 10 cph/cm2 or less to the hydrosulfate aqueous solution, from which the lead sulfate has been removed, and, at the same time, the solution is circulated while removing the lead sulfate to electrowinning the metal using the hydrosulfate aqueous solution as an electrolytic solution.
摘要:
Provided is a high purity tin (Sn) having an extremely low oxygen content. A high purity tin having a tin purity of 5N (99.999% by mass, provided that carbon, nitrogen, oxygen and hydrogen are excluded) or more, wherein the high purity tin has an oxygen content of less than 10 ppb by mass, as measured by elemental analysis using Dynamic-SIMS.
摘要:
A method of recovering metals from electronic waste comprises providing a powder comprising electronic waste in at least a first reactor and a second reactor and providing an electrolyte comprising at least ferric ions in an electrochemical cell in fluid communication with the first reactor and the second reactor. The method further includes contacting the powders within the first reactor and the second reactor with the electrolyte to dissolve at least one base metal from each reactor into the electrolyte and reduce at least some of the ferric ions to ferrous ions. The ferrous ions are oxidized at an anode of the electrochemical cell to regenerate the ferric ions. The powder within the second reactor comprises a higher weight percent of the at least one base metal than the powder in the first reactor. Additional methods of recovering metals from electronic waste are also described, as well as an apparatus of recovering metals from electronic waste.
摘要:
Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower α rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of α rays in tin and tin alloys, and to obtain high-purity tin, in which the α dose has been reduced, suitable for the required materials, as well as a method for producing the same.
摘要翻译:公开了锡,其特征在于熔融和铸造后的锡样品的α剂量小于0.0005cph / cm 2。 由于近来的半导体器件具有高度致密化和高容量性,所以存在由半导体芯片附近的材料发射的α射线的影响引起的软误差的风险增加。 特别是对于在半导体器件附近使用的焊料材料和锡的高纯化性以及对α射线较低的材料的要求的要求较高。 因此,本发明的目的在于明确在锡和锡合金中产生α射线的现象,并获得适合所需材料的α剂量已经降低的高纯度锡 作为其制造方法。
摘要:
High purity tin and tin alloy are provided in which the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher, provided that this excludes the gas components of O, C, N, H, S and P. A cast ingot of the tin or alloy has an α ray count of 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and of large capacity, there is risk of a soft error occurring due to α ray from materials in the vicinity of the semiconductor chip. Thus, there are demands for purifying soldering material used in the vicinity of semiconductor devices, and materials with fewer α rays. The disclosed tin, alloy, and method reduce α dose of tin so as to be adaptable as the foregoing material.
摘要翻译:提供高纯度锡和锡合金,其中U和Th的各自的含量为5ppb以下,Pb和Bi的各自的含量为1ppm以下,纯度为5N以上,只要不排除气体 O,C,N,H,S和P的组分。锡或合金的铸锭具有0.001cph / cm 2以下的α射线计数。 由于最近的半导体器件致密化并且容量大,所以存在由于半导体芯片附近的材料的α射线而产生软错误的风险。 因此,需要对半导体器件附近使用的焊接材料进行纯化,并且需要具有较少α射线的材料。 所公开的锡,合金和方法减少了锡剂量,以适应上述材料。
摘要:
Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode 11 by electrowinning in an electrolytic bath in which a diaphragm 14 is placed between an anode 12 and the cathode 11, by using a raw material for tin as the anode 12 and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.
摘要:
Proposed is a method for collecting valuable metal from an ITO scrap including a step of collecting tin by subjecting the ITO scrap to electrolysis. Further proposed is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and a tin collecting bath, dissolving the ITO scrap in the electrolytic bath, and thereafter collecting tin in the tin collecting bath. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of dissolving the ITO scrap by subjecting it to electrolysis as an anode in electrolyte, precipitating only tin contained in the solution as tin itself or a substance containing tin, extracting the precipitate, placing it in a collecting bath, re-dissolving this to obtain a solution of tin hydroxide, and performing electrolysis or neutralization thereto in order to collect tin. Consequently, provided is a method for efficiently collecting tin from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arising during the manufacture of such ITO sputtering target.
摘要:
Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and collecting indium or tin as oxides. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane to precipitate hydroxide of tin, thereafter extracting anolyte temporarily, and precipitating and collecting indium contained in the anolyte as hydroxide. With the methods for collecting valuable metal from an ITO scrap described above, indium or tin may be collected as oxides by roasting the precipitate containing indium or tin. Consequently, provided is a method for efficiently collecting indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.
摘要:
It is herein described an electrowinning cell with a spouted bed electrode of growing metallic beads, separated by a semi-permeable diaphragm and suitable for being assembled in a stack in a modular arrangement.
摘要:
The present invention relates to metal anodes for oxygen evolution from solutions containing fluorides or artionic fluorocomplexes such as tetrafluoroborates and hexafluorosilicates, the anodes having a metal substrate or matrix selected in the group comprising nickel-copper alloys with a copper content in the range of 2.5 and 30% by weight, tungsten or tantalum, niobium or titanium, combinations thereof or alloys of the same with palladium, nickel or yttrium. The anodes further comprise electrocatalytic compounds for oxygen evolution dispersed in the metal matrix. In the case of nickel- copper alloys, useful electrocatalytic compounds are cerium or tin dioxides, with suitable additives, while for tungsten, cobalt added with nickel, iron, copper or palladium may be used. The same electrocatalytic compounds may be advantageously applied to said metal substrate or matrix in the form of a coating using the conventional technique of thermal decomposition of paints containing suitable precursors or by thermal deposition such as plasma-spray.