METAL AND TIN ALLOY HAVING LOW ALPHA-RAY EMISSION, AND METHOD FOR PRODUCING SAME

    公开(公告)号:US20230085708A1

    公开(公告)日:2023-03-23

    申请号:US17991018

    申请日:2022-11-21

    摘要: Any metal having a low α-ray emission, the metal being any one of tin, silver, copper, zinc, or indium, wherein an emission of an α-ray after heating the metal at 100° C. in an atmosphere for six hours is 0.002 cph/cm2 or less. Any metal of tin, silver, copper, zinc and indium each including lead as an impurity is dissolved to prepare a hydrosulfate aqueous solution of the metal and lead sulfate is precipitated and removed in the solution. The lead sulfate is precipitated in the hydrosulfate aqueous solution by adding a lead nitrate aqueous solution including lead having an α-ray emission of 10 cph/cm2 or less to the hydrosulfate aqueous solution, from which the lead sulfate has been removed, and, at the same time, the solution is circulated while removing the lead sulfate to electrowinning the metal using the hydrosulfate aqueous solution as an electrolytic solution.

    Low α-dose tin or tin alloy, and method for producing same
    4.
    发明授权
    Low α-dose tin or tin alloy, and method for producing same 有权
    低α值锡或锡合金及其制造方法

    公开(公告)号:US09394590B2

    公开(公告)日:2016-07-19

    申请号:US13634946

    申请日:2011-02-14

    申请人: Gaku Kanou

    发明人: Gaku Kanou

    摘要: Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower α rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of α rays in tin and tin alloys, and to obtain high-purity tin, in which the α dose has been reduced, suitable for the required materials, as well as a method for producing the same.

    摘要翻译: 公开了锡,其特征在于熔融和铸造后的锡样品的α剂量小于0.0005cph / cm 2。 由于近来的半导体器件具有高度致密化和高容量性,所以存在由半导体芯片附近的材料发射的α射线的影响引起的软误差的风险增加。 特别是对于在半导体器件附近使用的焊料材料和锡的高纯化性以及对α射线较低的材料的要求的要求较高。 因此,本发明的目的在于明确在锡和锡合金中产生α射线的现象,并获得适合所需材料的α剂量已经降低的高纯度锡 作为其制造方法。

    Process for producing high-purity tin
    5.
    发明授权
    Process for producing high-purity tin 有权
    高纯锡生产工艺

    公开(公告)号:US09340850B2

    公开(公告)日:2016-05-17

    申请号:US14340933

    申请日:2014-07-25

    摘要: High purity tin and tin alloy are provided in which the respective contents of U and Th are 5 ppb or less, the respective contents of Pb and Bi are 1 ppm or less, and the purity is 5N or higher, provided that this excludes the gas components of O, C, N, H, S and P. A cast ingot of the tin or alloy has an α ray count of 0.001 cph/cm2 or less. Since recent semiconductor devices are densified and of large capacity, there is risk of a soft error occurring due to α ray from materials in the vicinity of the semiconductor chip. Thus, there are demands for purifying soldering material used in the vicinity of semiconductor devices, and materials with fewer α rays. The disclosed tin, alloy, and method reduce α dose of tin so as to be adaptable as the foregoing material.

    摘要翻译: 提供高纯度锡和锡合金,其中U和Th的各自的含量为5ppb以下,Pb和Bi的各自的含量为1ppm以下,纯度为5N以上,只要不排除气体 O,C,N,H,S和P的组分。锡或合金的铸锭具有0.001cph / cm 2以下的α射线计数。 由于最近的半导体器件致密化并且容量大,所以存在由于半导体芯片附近的材料的α射线而产生软错误的风险。 因此,需要对半导体器件附近使用的焊接材料进行纯化,并且需要具有较少α射线的材料。 所公开的锡,合金和方法减少了锡剂量,以适应​​上述材料。

    Method For Manufacturing High Purity Tin, Electrowinning Apparatus For High Purity Tin And High Purity Tin
    6.
    发明申请

    公开(公告)号:US20160097139A1

    公开(公告)日:2016-04-07

    申请号:US14872316

    申请日:2015-10-01

    IPC分类号: C25C1/14 C22C13/00 C25C7/06

    CPC分类号: C25C1/14 C22C13/00 C25C7/06

    摘要: Provided is a method for manufacturing high purity tin including: depositing electrodeposited tin on the surface of a cathode 11 by electrowinning in an electrolytic bath in which a diaphragm 14 is placed between an anode 12 and the cathode 11, by using a raw material for tin as the anode 12 and a leachate obtained by electrolytically leaching the raw material for tin in a sulfuric acid solution as an electrolytic solution, the electrolytic solution containing a smoothing agent for improving a surface property of the electrodeposited tin; discharging the electrolytic solution from the electrolytic bath such that lead in the discharged electrolytic solution is removed; and putting the electrolytic solution from which lead is removed back into the electrolytic bath.

    摘要翻译: 本发明提供一种制造高纯度锡的方法,包括:通过在阳极12和阴极11之间放置隔膜14的电解槽中电沉积在阴极11的表面上沉积电沉积锡,使用锡原料 作为阳极12和通过电解浸提硫酸原料中的锡作为电解液而获得的渗滤液,所述电解液含有用于提高电沉积锡的表面性质的平滑剂; 从电解槽排出电解液,使排出的电解液中的铅被除去; 并将从其中除去铅的电解溶液返回到电解槽中。

    Method for collection of valuable metal from ITO scrap
    7.
    发明授权
    Method for collection of valuable metal from ITO scrap 有权
    从ITO废料中收集贵重金属的方法

    公开(公告)号:US08012335B2

    公开(公告)日:2011-09-06

    申请号:US12445763

    申请日:2007-06-27

    摘要: Proposed is a method for collecting valuable metal from an ITO scrap including a step of collecting tin by subjecting the ITO scrap to electrolysis. Further proposed is a method for collecting valuable metal from an ITO scrap including the steps of providing an ITO electrolytic bath and a tin collecting bath, dissolving the ITO scrap in the electrolytic bath, and thereafter collecting tin in the tin collecting bath. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of dissolving the ITO scrap by subjecting it to electrolysis as an anode in electrolyte, precipitating only tin contained in the solution as tin itself or a substance containing tin, extracting the precipitate, placing it in a collecting bath, re-dissolving this to obtain a solution of tin hydroxide, and performing electrolysis or neutralization thereto in order to collect tin. Consequently, provided is a method for efficiently collecting tin from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arising during the manufacture of such ITO sputtering target.

    摘要翻译: 提出了从ITO废料中收集有价金属的方法,包括通过使ITO废料电解而收集锡的步骤。 进一步提出的是从ITO废料中收集有价金属的方法,包括提供ITO电解槽和锡收集槽,将ITO废料溶解在电解槽中,然后在锡收集槽中收集锡的步骤。 另外提出了一种从ITO废料中收集有价值的金属的方法,包括以下步骤:通过将ITO废料作为电解液中的阳极进行电解而溶解,使锡本身或含有锡的物质仅沉淀在溶液中, 沉淀,将其置于收集浴中,将其再溶解以获得氢氧化锡溶液,并进行电解或中和以收集锡。 因此,提供了一种用于在制造这种ITO溅射靶时产生的铟锡氧化物(ITO)溅射靶的ITO废料或诸如ITO磨机末端的ITO废料的有效收集锡的方法。

    Method for collection of valuable metal from ITO scrap
    8.
    发明授权
    Method for collection of valuable metal from ITO scrap 有权
    从ITO废料中收集贵重金属的方法

    公开(公告)号:US08003065B2

    公开(公告)日:2011-08-23

    申请号:US12445639

    申请日:2007-06-27

    摘要: Proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in pH-adjusted electrolyte, and collecting indium or tin as oxides. Additionally proposed is a method for collecting valuable metal from an ITO scrap including the steps of subjecting the ITO scrap to electrolysis in an electrolytic bath partitioned with a diaphragm or an ion-exchange membrane to precipitate hydroxide of tin, thereafter extracting anolyte temporarily, and precipitating and collecting indium contained in the anolyte as hydroxide. With the methods for collecting valuable metal from an ITO scrap described above, indium or tin may be collected as oxides by roasting the precipitate containing indium or tin. Consequently, provided is a method for efficiently collecting indium from an ITO scrap of an indium-tin oxide (ITO) sputtering target or an ITO scrap such as ITO mill ends arisen during the manufacture of such ITO sputtering target.

    摘要翻译: 提出了一种从ITO废料中收集有价金属的方法,包括以下步骤:将ITO废料在pH调节的电解液中电解,并收集铟或锡作为氧化物。 另外提出了一种从ITO废料中收集有价值的金属的方法,包括以下步骤:在用隔膜或离子交换膜分隔的电解槽中对ITO废料进行电解以沉淀锡的氢氧化物,然后暂时萃取阳极电解液,并沉淀 并收集阳极电解液中含有的铟作为氢氧化物。 利用从上述ITO废料中收集贵重金属的方法,通过焙烧含有铟或锡的沉淀物可以将铟或锡作为氧化物进行收集。 因此,在ITO溅射靶的制造过程中,提供了从铟锡氧化物(ITO)溅射靶的ITO废料或诸如ITO研磨端的ITO废料中高效收集铟的方法。

    Metal anodes for electrolytic acid solutions containing fluorides or
fluoroanionic complexes
    10.
    发明授权
    Metal anodes for electrolytic acid solutions containing fluorides or fluoroanionic complexes 失效
    含有氟化物或氟代阴离子络合物的电解酸溶液的金属阳极

    公开(公告)号:US5344530A

    公开(公告)日:1994-09-06

    申请号:US55210

    申请日:1993-04-29

    CPC分类号: C25C1/18 C25C7/02

    摘要: The present invention relates to metal anodes for oxygen evolution from solutions containing fluorides or artionic fluorocomplexes such as tetrafluoroborates and hexafluorosilicates, the anodes having a metal substrate or matrix selected in the group comprising nickel-copper alloys with a copper content in the range of 2.5 and 30% by weight, tungsten or tantalum, niobium or titanium, combinations thereof or alloys of the same with palladium, nickel or yttrium. The anodes further comprise electrocatalytic compounds for oxygen evolution dispersed in the metal matrix. In the case of nickel- copper alloys, useful electrocatalytic compounds are cerium or tin dioxides, with suitable additives, while for tungsten, cobalt added with nickel, iron, copper or palladium may be used. The same electrocatalytic compounds may be advantageously applied to said metal substrate or matrix in the form of a coating using the conventional technique of thermal decomposition of paints containing suitable precursors or by thermal deposition such as plasma-spray.

    摘要翻译: 本发明涉及从含有氟化物或挥发性氟化合物如四氟硼酸盐和六氟硅酸盐的溶液中产生的用于产生氧的金属阳极,所述阳极具有选自铜含量在2.5的镍 - 铜合金中的金属基体或基体, 30重量%的钨或钽,铌或钛,它们的组合或其与钯,镍或钇的合金。 阳极还包含用于分散在金属基质中的析氧的电催化化合物。 在镍铜合金的情况下,有用的电催化化合物是铈或锡二氧化物,具有合适的添加剂,而对于钨,可以使用添加有镍,铁,铜或钯的钴。 使用常规的含有合适前体的涂料的热分解技术或通过热沉积如等离子体喷涂,可以将相同的电催化化合物有利地以涂层形式施加到所述金属基材或基质上。