公开(公告)号：US09597754B2

公开(公告)日：2017-03-21

申请号：US14000886

申请日：2012-02-15

申请人： Gaku Kanou

发明人： Gaku Kanou

IPC分类号： B23K35/30 ,  C22C9/00 ,  C25C1/12 ,  C22C9/08 ,  H01L23/00

CPC分类号： B23K35/302 ,  C22C9/00 ,  C22C9/08 ,  C25C1/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01204 ,  H01L2924/01005 ,  H01L2924/01056 ,  H01L2924/01004 ,  H01L2924/01083 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01027 ,  H01L2924/01024 ,  H01L2924/01066 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01057 ,  H01L2924/01012 ,  H01L2924/01042 ,  H01L2924/0106 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01045 ,  H01L2924/01044 ,  H01L2924/01051 ,  H01L2924/0105 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01022 ,  H01L2924/0107 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01092 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2224/48

摘要： Copper or a copper alloy characterized in having an α-ray emission of 0.001 cph/cm2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of α rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in α-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which α rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in α-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.

公开(公告)号：US20140010705A1

公开(公告)日：2014-01-09

申请号：US14000886

申请日：2012-02-15

申请人： Gaku Kanou

发明人： Gaku Kanou

IPC分类号： C25C1/12 ,  B23K35/30

CPC分类号： B23K35/302 ,  C22C9/00 ,  C22C9/08 ,  C25C1/12 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00 ,  H01L2924/01204 ,  H01L2924/01005 ,  H01L2924/01056 ,  H01L2924/01004 ,  H01L2924/01083 ,  H01L2924/0102 ,  H01L2924/01058 ,  H01L2924/01027 ,  H01L2924/01024 ,  H01L2924/01066 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01032 ,  H01L2924/01049 ,  H01L2924/01077 ,  H01L2924/01057 ,  H01L2924/01012 ,  H01L2924/01042 ,  H01L2924/0106 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01045 ,  H01L2924/01044 ,  H01L2924/01051 ,  H01L2924/0105 ,  H01L2924/01038 ,  H01L2924/01039 ,  H01L2924/01022 ,  H01L2924/0107 ,  H01L2924/0103 ,  H01L2924/0104 ,  H01L2924/01092 ,  H01L2924/20752 ,  H01L2924/013 ,  H01L2224/48

摘要： Copper or a copper alloy characterized in having an α-ray emission of 0.001 cph/cm2 or less. Since recent semiconductor devices are produced to have higher density and higher capacity, there is greater risk of soft errors caused by the influence of α rays emitted from materials positioned near semiconductor chips. In particular, there are strong demands for achieving higher purification of copper and copper alloys which are used near the semiconductor device, such as copper or copper alloy wiring lines, copper or copper alloy bonding wires, and soldering materials, and materials reduced in α-ray emission are also demanded. Thus, the present invention elucidates the phenomenon in which α rays are emitted from copper or copper alloys, and provides copper or copper alloy reduced in α-ray emission which is adaptable to the demanded material, and a bonding wire in which such copper or copper alloy is used as its raw material.

摘要翻译： 铜或铜合金，其特征在于具有0.001cph / cm 2以下的α射线发射。 由于最近制造的半导体器件具有更高的密度和更高的容量，所以由位于半导体芯片附近的材料发射的α射线的影响引起的软错误的风险更大。 特别是对于半导体器件附近使用的铜，铜合金，铜或铜合金布线，铜或铜合金接合线以及焊接材料，以及α- 还要求射线辐射。 因此，本发明阐明了从铜或铜合金发射α射线的​​现象，并且提供了能够适应所需材料的减少的α射线发射的铜或铜合金;以及接合线，其中这种铜或铜 合金作为原料。

公开(公告)号：US08980169B2

公开(公告)日：2015-03-17

申请号：US12810319

申请日：2008-10-31

申请人： Masahiro Takahata ,  Yuichiro Shindo ,  Gaku Kanou

发明人： Masahiro Takahata ,  Yuichiro Shindo ,  Gaku Kanou

IPC分类号： C22C28/00 ,  C21D1/00 ,  C23C14/00 ,  C22B9/22 ,  C22B59/00 ,  C23C14/34 ,  H01L21/28 ,  H01L21/285 ,  H01L29/49

CPC分类号： C22C28/00 ,  C22B9/228 ,  C22B59/00 ,  C23C14/3414 ,  H01L21/28079 ,  H01L21/2855 ,  H01L29/495

摘要： Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

摘要翻译： 提供高纯度镧，其中不包括稀土元素和气体成分的纯度为4N以上，镧中的铝，铁，铜的含量分别为100重量ppm以下。 以及高纯度镧，其中除了稀土元素和气体组分之外的纯度为4N以上，镧中的铝，铁和铜的含量分别为100重量ppm以下，氧含量为1500重量ppm以下，元素 碱金属和碱土金属的含量分别为1重量ppm以下，过渡金属和除上述以外的高熔点金属元素分别为10重量ppm以下，放射性元素分别为10重量ppm以下。 本发明旨在提供能够高效稳定地提供高纯度镧，包含高纯度镧的溅射靶和主要包含高纯度镧的金属栅薄膜的技术。

公开(公告)号：US20100272596A1

公开(公告)日：2010-10-28

申请号：US12810319

申请日：2008-10-31

申请人： Masahiro Takahata ,  Yuichiro Shindo ,  Gaku Kanou

发明人： Masahiro Takahata ,  Yuichiro Shindo ,  Gaku Kanou

IPC分类号： C22C28/00 ,  C23C14/34 ,  C22B9/22

CPC分类号： C22C28/00 ,  C22B9/228 ,  C22B59/00 ,  C23C14/3414 ,  H01L21/28079 ,  H01L21/2855 ,  H01L29/495

摘要： Provided are high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, and amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less; as well as high-purity lanthanum, wherein the purity excluding rare-earth elements and gas components is 4N or higher, amounts of aluminum, iron and copper in the lanthanum are respectively 100 wtppm or less, oxygen content is 1500 wtppm or less, elements of alkali metals and alkali earth metals are respectively 1 wtppm or less, elements of transition metals and high-melting-point metals other than those above are respectively 10 wtppm or less, and radioactive elements are respectively 10 wtppb or less. The invention aims to provide technology capable of efficiently and stably providing high-purity lanthanum, a sputtering target comprising high-purity lanthanum, and a thin film for metal gate mainly comprising high-purity lanthanum.

摘要翻译： 提供高纯度镧，其中不包括稀土元素和气体成分的纯度为4N以上，镧中的铝，铁，铜的含量分别为100重量ppm以下。 以及高纯度镧，其中除了稀土元素和气体组分之外的纯度为4N以上，镧中的铝，铁和铜的含量分别为100重量ppm以下，氧含量为1500重量ppm以下，元素 碱金属和碱土金属的含量分别为1重量ppm以下，过渡金属和除上述以外的高熔点金属元素分别为10重量ppm以下，放射性元素分别为10重量ppm以下。 本发明旨在提供能够高效稳定地提供高纯度镧，包含高纯度镧的溅射靶和主要包含高纯度镧的金属栅薄膜的技术。

公开(公告)号：US09394590B2

公开(公告)日：2016-07-19

申请号：US13634946

申请日：2011-02-14

申请人： Gaku Kanou

发明人： Gaku Kanou

IPC分类号： C25C1/14 ,  C22C13/00 ,  B23K35/26 ,  B23K35/36 ,  B23K35/40

CPC分类号： C22C13/00 ,  B23K35/262 ,  B23K35/36 ,  B23K35/40 ,  B23K2101/40 ,  C22B25/08

摘要： Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower α rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of α rays in tin and tin alloys, and to obtain high-purity tin, in which the α dose has been reduced, suitable for the required materials, as well as a method for producing the same.

摘要翻译： 公开了锡，其特征在于熔融和铸造后的锡样品的α剂量小于0.0005cph / cm 2。 由于近来的半导体器件具有高度致密化和高容量性，所以存在由半导体芯片附近的材料发射的α射线的影响引起的软误差的风险增加。 特别是对于在半导体器件附近使用的焊料材料和锡的高纯化性以及对α射线较低的材料的要求的要求较高。 因此，本发明的目的在于明确在锡和锡合金中产生α射线的现象，并获得适合所需材料的α剂量已经降低的高纯度锡 作为其制造方法。

公开(公告)号：US20090280025A1

公开(公告)日：2009-11-12

申请号：US12088875

申请日：2006-06-19

申请人： Gaku Kanou ,  Yuichiro Shindo

发明人： Gaku Kanou ,  Yuichiro Shindo

IPC分类号： C22C5/04 ,  C23C14/34 ,  B22F1/00

CPC分类号： C23C14/3414 ,  C22C5/04 ,  H01L28/65

摘要： An object of the present invention is to provide a high-purity Ru alloy target for sputtering and its manufacturing method, which are capable of reducing harmful substances as much as possible, refining the crystal grains as much as possible so as to make the film thickness distribution during deposition to be uniform, and preventing deterioration in adhesiveness with an Si substrate, and which are suitable in forming a capacitor electrode material of a semiconductor memory, as well as a high-purity Ru alloy sputtered film obtained by sputtering this Ru alloy target.In order to achieve the foregoing object, the present invention provides a high-purity Ru alloy target, wherein the content of the platinum group elements excluding Ru is 15 to 200 and remnants are Ru and inevitable impurities. Also, provided is the manufacturing method of a high-purity Ru alloy target, wherein the content of platinum group elements excluding Ru is 15 to 200 wtppm and remnants are Ru and inevitable impurities, including the steps of mixing Ru powder having a purity level of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding the mixed powder to obtain a compact, performing electron beam melting to the compact to obtain an ingot, and performing forge processing to the ingot to obtain a target.

摘要翻译： 本发明的目的是提供一种用于溅射的高纯度Ru合金靶及其制造方法，其能够尽可能地减少有害物质，尽可能地使晶粒细化以使膜厚度 沉积期间的分布均匀，并且防止与Si基板的粘合性的劣化，并且适合于形成半导体存储器的电容器电极材料，以及通过溅射该Ru合金靶获得的高纯度Ru合金溅射膜 。 为了实现上述目的，本发明提供了一种高纯度Ru合金靶，其中除Ru以外的铂族元素的含量为15〜200，残留物为Ru和不可避免的杂质。 此外，作为高纯度Ru合金靶的制造方法，除了Ru以外的铂族元素的含量为15〜200重量ppm，残留物为Ru和不可避免的杂质，其中包括将纯度等级为 99.9％以上，除了Ru以外的铂族元素粉末，对该混合粉末进行压制成型，得到致密的电子束熔融，获得锭，对锭进行锻造处理，得到靶。

公开(公告)号：US20130028786A1

公开(公告)日：2013-01-31

申请号：US13634946

申请日：2011-02-14

申请人： Gaku Kanou

发明人： Gaku Kanou

IPC分类号： C22C13/00 ,  C25C1/14 ,  B22D23/00

CPC分类号： C22C13/00 ,  B23K35/262 ,  B23K35/36 ,  B23K35/40 ,  B23K2101/40 ,  C22B25/08

摘要： Disclosed is tin characterized in that a sample of the tin after melting and casting has an α dose of less than 0.0005 cph/cm2. Since recent semiconductor devices are highly densified and of high capacity, there is an increasing risk of soft errors caused by the influence of α rays emitted from materials in the vicinity of semiconductor chips. In particular, there are strong demands for high purification of solder materials and tin for use in the vicinity of semiconductor devices, and demands for materials with lower α rays. Accordingly, an object of the present invention is to clarify the phenomenon of the generation of α rays in tin and tin alloys, and to obtain high-purity tin, in which the α dose has been reduced, suitable for the required materials, as well as a method for producing the same.

摘要翻译： 公开了锡，其特征在于熔融和铸造后的锡样品的α剂量小于0.0005cph / cm 2。 由于近来的半导体器件具有高度致密化和高容量性，所以存在由半导体芯片附近的材料发射的α射线的影响引起的软误差的风险增加。 特别是对于在半导体器件附近使用的焊料材料和锡的高纯化性以及对α射线较低的材料的要求的要求较高。 因此，本发明的目的在于明确在锡和锡合金中产生α射线的现象，并获得适合所需材料的α剂量已经降低的高纯度锡 作为其制造方法。

公开(公告)号：US07871564B2

公开(公告)日：2011-01-18

申请号：US12088875

申请日：2006-06-19

申请人： Gaku Kanou ,  Yuichiro Shindo

发明人： Gaku Kanou ,  Yuichiro Shindo

IPC分类号： C22C5/04

CPC分类号： C23C14/3414 ,  C22C5/04 ,  H01L28/65

摘要： In order to obtain a high purity sputtered film for a capacitor electrode of a semiconductor memory and to make the sputtered film have uniform thickness and good adhesiveness with Si substrate, a high-purity Ru alloy target is provided, wherein a total content of the platinum group elements excluding Ru is in a range of 15 to 200 wtppm and remnants are Ru and inevitable impurities. Also, provided is a manufacturing method of the high-purity Ru alloy target, comprising the steps of mixing Ru powder having a purity of 99.9% or higher and powder of platinum group elements excluding Ru, performing press molding of the mixed powder to obtain a compact, performing electron beam melting of the compact to obtain an ingot, and forging the ingot at 1400 to 1900° C.

摘要翻译： 为了获得用于半导体存储器的电容器电极的高纯度溅射膜，并且使溅射膜具有均匀的厚度和与Si衬底的良好粘附性，提供了高纯度Ru合金靶，其中铂的总含量 除Ru以外的组元素为15〜200重量ppm，残留物为Ru和不可避免的杂质。 此外，提供了高纯度Ru合金靶材的制造方法，其特征在于，包括将纯度为99.9％以上的Ru粉末和除了Ru以外的铂族元素的粉末混合的工序，进行所述混合粉末的压制成型，得到 紧凑，执行电子束熔化的压块以获得锭，并在1400至1900℃锻造锭。