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公开(公告)号:US11605750B2
公开(公告)日:2023-03-14
申请号:US17183164
申请日:2021-02-23
申请人: SunPower Corporation
发明人: Richard M. Swanson , Marius M. Bunea , Michael C. Johnson , David D. Smith , Yu-Chen Shen , Peter J. Cousins , Tim Dennis
IPC分类号: H01L21/00 , H01L31/0747 , H01L31/068 , H01L31/0745 , H01L31/072 , H01L31/0216 , H01L31/18 , H01L31/0224 , H01L31/0236
摘要: Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.
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公开(公告)号:US11563132B2
公开(公告)日:2023-01-24
申请号:US16563994
申请日:2019-09-09
IPC分类号: H01L31/0445 , H02S40/38 , H01L31/0224 , H01L31/032 , H01L31/0687 , H01L31/072 , H01L31/0725
摘要: A solar cell of an embodiment includes: a p-electrode in which a first p-electrode and a second p-electrode are laminated; a p-type light-absorbing layer in direct contact with the first p-electrode; an n-type layer in direct contact with the p-type light-absorbing layer; and an n-electrode. The first p-electrode is disposed between the p-type light-absorbing layer and the second p-electrode. The p-type light-absorbing layer is disposed between the n-type layer and the first p-electrode. The n-type layer is disposed between the p-type light-absorbing layer and the n-electrode. The first p-electrode includes a metal oxide containing Sn as a main component.
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公开(公告)号:US11557688B2
公开(公告)日:2023-01-17
申请号:US16567684
申请日:2019-09-11
IPC分类号: H01L31/0725 , H01L31/0216 , H01L31/0224 , H01L31/032 , H01L31/075 , H01L31/072
摘要: A solar cell of an embodiment includes: a substrate; an n-electrode; an n-type layer; a p-type light absorption layer which is a semiconductor of a Cu-based oxide; and a p-electrode. The n-electrode is disposed between the substrate and the n-type layer. The n-type layer is disposed between the n-electrode and the p-type light absorption layer. The p-type light absorption layer is disposed between the n-type layer and the p-electrode. The n-type layer is disposed closer to a light incident side than the p-type light absorption layer. The substrate is a single substrate included in the solar cell.
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公开(公告)号:US20220293808A1
公开(公告)日:2022-09-15
申请号:US17686288
申请日:2022-03-03
申请人: SOLARIA CORPORATION
发明人: Arnaud LEPERT , Ricky DUNBAR , Lili WANG
IPC分类号: H01L31/05 , H01L31/072 , H01L31/0224 , H01L31/18
摘要: A semiconductor module comprises a string made up of a plurality of cells or strips arranged in series. A front surface of at least one cell or strip, has a polarity opposite to that of the front surface of another cell or strip in the string. In some embodiments the strips may comprise photovoltaic devices of different structures, for example Heterojunction (HJT) and Tunnel Oxide Passivated Contact (TOPCon). According to certain embodiments, one or more cells or strips of the string may be arranged in an overlapping shingled configuration, such that a front surface of the overlapped strip exhibits the appropriate polarity. For particular embodiments, one or more cells or strips may be adjacent in the string, such that a cell or strip has a front or back surface of polarity appropriate to connect with the adjacent cell or strip (e.g., using a ribbon located on a same surface).
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公开(公告)号:US11362222B2
公开(公告)日:2022-06-14
申请号:US17087924
申请日:2020-11-03
申请人: ASM IP HOLDING B.V.
发明人: Tom E. Blomberg , Hannu Huotari
IPC分类号: H01L31/0232 , H01L31/032 , H01L31/062 , H01L31/072 , C23C14/06 , C23C16/455 , C23C16/30 , H01L31/18 , H01L33/00 , H01L33/58 , C23C16/22
摘要: Deposition processes are disclosed herein for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconducting transition metal compound phase on a substrate in a reaction space. Deposition processes can include a plurality of super-cycles. Each super-cycle may include a dielectric transition metal compound sub-cycle and a reducing sub-cycle. The dielectric transition metal compound sub-cycle may include contacting the substrate with a dielectric transition metal compound. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant. The thin film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase.
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公开(公告)号:US11342916B2
公开(公告)日:2022-05-24
申请号:US16883753
申请日:2020-05-26
申请人: Schottky LSI, Inc.
IPC分类号: H03K19/09 , H03K19/0956 , H03K19/0948 , H03K19/017 , H01L27/11546 , H01L27/118 , H01L31/0376 , H03K19/17728 , H01L25/065 , H01L31/032 , H01L27/112 , H01L27/105 , H01L27/108 , H01L31/074 , H01L27/02 , H01L27/11526 , H01L31/072 , H01L49/02
摘要: Integrated circuits described herein implement an x-input logic gate. The integrated circuit includes a plurality of Schottky diodes that includes x Schottky diodes and a plurality of source-follower transistors that includes x source-follower transistors. Each respective source-follower transistor of the plurality of source-follower transistors includes a respective gate node that is coupled to a respective Schottky diode. A first source-follower transistor of the plurality of source-follower transistors is connected serially to a second source-follower transistor of the plurality of source-follower transistors.
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公开(公告)号:US11271123B2
公开(公告)日:2022-03-08
申请号:US15937530
申请日:2018-03-27
IPC分类号: H01L31/032 , H01L31/072 , H01L51/44 , H01L31/054 , C01B19/00 , H01L51/00 , C07F9/94 , H01L51/42
摘要: An alloyed halide double perovskite material, an alloyed halide double perovskite solar-cell absorber and solar cells constructed with such absorbers, the alloyed halide double perovskite material having the formula A2B1-aB′1-bDxX6, where A is an inorganic cation, an organic cation, a mixture of inorganic cations, a mixture of organic cations, or a mixture of one or more inorganic cations and one or more organic cations, where B is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where B′ is a metal, a mixture of metals, a metalloid, a mixture of metalloids, any mixture thereof, or is a vacancy, where D is a dopant, and where X is a halide, a pseudohalide, a mixture of halides, a mixture of pseudohalides, or a mixture of halides and pseudohalides, and where x=a+b.
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公开(公告)号:US20220037544A1
公开(公告)日:2022-02-03
申请号:US17274975
申请日:2019-09-10
申请人: QD SOLAR INC.
IPC分类号: H01L31/0352 , H01L31/072
摘要: Disclosed is a quantum dot based solar cell device which includes a substrate, a light harvesting structure sandwiched between electrically conducing layers, with at least one electrically conducting layer being substantially transparent with the light harvesting structure being located on the substrate. The light harvesting structure includes a layer of semiconducting quantum dots, with this layer of semiconducting quantum dots including at least two distinct sets of semiconducting quantum dots which are homogenously mixed. One of the two distinct sets of semiconducting quantum dots has a first bandgap and the at least one other distinct set of semiconducting quantum dots has a second bandgap different from the first bandgap. Both sets of semiconducting quantum dots are passivated with any one or combination of halides and pseudo-halides. Upon illumination, the quantum dot solar cell device exhibits a photovoltage that is intermediate between a photovoltage that would generated separately if the solar cell device had only the first set of quantum dots and a photovoltage that would be generated separately if the solar cell device had only the second set of quantum dots.
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公开(公告)号:US11125389B2
公开(公告)日:2021-09-21
申请号:US16857627
申请日:2020-04-24
发明人: Mohamed M. Hilali
IPC分类号: H01L31/068 , H01L31/0352 , H01L31/18 , H01L31/0236 , H01L31/072 , H01L31/0224 , F17C3/02 , H01L33/44
摘要: Screen-printable metallization pastes for forming thin oxide tunnel junctions on the back-side surface of solar cells are disclosed. Interdigitated metal contacts can be deposited on the oxide tunnel junctions to provide all-back metal contact to a solar cell.
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公开(公告)号:US20210288204A1
公开(公告)日:2021-09-16
申请号:US17335874
申请日:2021-06-01
申请人: First Solar, Inc.
发明人: David Eaglesham , Peter V. Meyers
IPC分类号: H01L31/073 , H01L31/072
摘要: A photovoltaic cell can include an interfacial layer in contact with a semiconductor layer.
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