公开(公告)号：WO01096062A1

公开(公告)日：2001-12-20

申请号：PCT/US2000/018399

申请日：2000-07-03

IPC: B24B49/00 ,  B24B49/12 ,  B24D13/14 ,  H01L21/304 ,  B24B1/00

CPC classification number: B24B37/205 ,  B24B37/013 ,  B24B49/12

Abstract: An optical sensor that includes a light source (28) and a detector (30) is located within a cavity (14) in a polishing pad (10) so as to face the surface that is being polished. Light from the light source is reflected from the surface being polished and the reflected light is detected by the detector. The electrical signal produced by the detector is conducted to a hub (20) located at the central aperture (12) of the polishing pad. The disposable polishing pad is removably connected, both mechanically and electrically to the hub. The hub contains electronic circuitry (78, 58) that is concerned with supplying power to the optical sensor and with transmitting the electrical signal to a non-rotating station (26). Several techniques are described for accomplishing these tasks. The system permits continuous monitoring of an optical characteristic of a surface that is being polished, even while the polishing machine is in operation, and permits the end point of the polishing process to be determined.

Abstract translation: 包括光源（28）和检测器（30）的光学传感器位于抛光垫（10）内的空腔（14）内，以面对被抛光的表面。 来自光源的光从被抛光的表面反射，并且由检测器检测反射光。 由检测器产生的电信号被传导到位于抛光垫的中心孔（12）处的轮毂（20）。 一次性抛光垫可机械地和电气地连接到轮毂上。 集线器包含电子电路（78,58），其涉及向光学传感器供电并且将电信号传送到非旋转站（26）。 描述了几种完成这些任务的技术。 该系统即使在抛光机工作时也允许连续监测被抛光表面的光学特性，并允许确定抛光过程的终点。

公开(公告)号：WO01072470A1

公开(公告)日：2001-10-04

申请号：PCT/JP2001/002526

申请日：2001-03-28

IPC: G01B11/06 ,  B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/12 ,  G01B9/02 ,  G01B11/28 ,  H01J40/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/66 ,  B24B37/00 ,  H01L21/00

CPC classification number: B24B37/013 ,  B24B37/04 ,  B24B49/04 ,  B24B49/12

Abstract: A detection apparatus for detecting the process end point in the removal process of a layer on a wafer in an IC or other semiconductor device manufacturing process. This point can be detected in-situ and at high precision even when there is a pattern on the surface, or when there is no distinct change in the polishing layer, or when there is disturbance caused by a difference in the detection position or the slurry. Two or more characteristic quantities are extracted from a signal waveform obtained by irradiating a substrate surface with white light and detecting the reflected signal light or the transmitted signal light or both, fuzzy rules, etc., are used in performing detection by using these two or more characteristic quantities to perform a logical operation, and tuning is performed.

Abstract translation: 一种用于检测IC或其它半导体器件制造工艺中的晶片上的层的去除处理中的处理终点的检测装置。 即使在表面存在图形，或者当抛光层没有明显变化时，或者当由于检测位置或浆料的差异引起的干扰时，该点可以原位和高精度地检测 。 从通过用白光照射基板表面而获得的信号波形中提取两个或更多个特征量，并且检测反射信号光或透射信号光或两者，使用模糊规则等进行检测，通过使用这两个或 执行逻辑操作的更多特征量，并且执行调谐。

公开(公告)号：WO01053039A1

公开(公告)日：2001-07-26

申请号：PCT/US2001/001485

申请日：2001-01-18

IPC: B24B31/16 ,  B24B37/04 ,  B24B49/04 ,  B24B49/12 ,  B24B1/00 ,  B24B53/013

CPC classification number: B24B37/013 ,  B24B31/16 ,  B24B37/042 ,  B24B49/04 ,  B24B49/12

Abstract: A method for polishing a surface of metal on a semiconductor substrate by using a polishing pad and hydrogen peroxide, and removing particles of metal from the semiconductor substrate by polishing, and dissolving the particles in the quantity of hydrogen peroxide.

Abstract translation: 一种通过使用抛光垫和过氧化氢在半导体衬底上抛光金属表面的方法，并且通过抛光从半导体衬底去除金属颗粒，并将该颗粒溶解在过氧化氢中。

公开(公告)号：WO01044802A1

公开(公告)日：2001-06-21

申请号：PCT/DE1999/004014

申请日：1999-12-16

IPC: C23C14/54 ,  G01N33/00 ,  H01J37/32 ,  H01L21/66

CPC classification number: B24B37/013 ,  C23C14/54 ,  G01N2033/0095 ,  H01J37/32935 ,  H01L22/20 ,  H01L22/26

Abstract: The invention relates to a method for determining gaseous chemical components, in particular chemical gas compositions, in a process reactor (10) for treating electrical components, in particular wafers are disclosed. Said process reactors can be embodied as sputter-process reactors. The process reactor has at least one process chamber (12), wherein said electrical components are treated. In order to perform exact measurements of the chemical gas compositions and enable long-term monitoring of the process reactor, according to the invention, measurement of the gaseous chemical components in the process chamber are performed by at least one rest gas analysis device (13) preferably an OIS-mass spectrometer, whereby at least one rest gas analysis device is connected to the process chamber. Measurement is preferably performed at base pressure. Determination of the gaseous chemical components are performed in-situ, whereby the in-situ measurement of the gaseous chemical components is performed directly after termination of a treatment step carried out on components in the process chamber, in particular between two sequential treatment steps in the process chamber.

Abstract translation: 有用于治疗的电气部件，尤其是晶片描述了一种用于气体的化学成分，特别是化学气体组成，在处理反应器（10）的测量的方法。 这种过程的反应器可以是例如溅射工艺的反应器。 工艺反应器具有其中要治疗的电气部件的至少一个处理室（12）。 为了根据提出的发明进行简单且廉价的方式中，化学气体组成的精确测量，因此所述工艺反应器的长期监测，在处理腔室通过至少一个残余气体分析装置中的气体化学物质的测量（13） - 优选为OIS质谱仪 - 进行时，其中至少一种残留气体分析装置被连接到所述处理室。 测量优选在基础压力。 此外，气态化学组分的测定原位进行时，所述气态化学组分的在处理室中的电气部件的一个处理步骤完成之后，立即在原位测量，特别地，在处理室中的两个连续的处理步骤之间进行。

公开(公告)号：WO01027990A1

公开(公告)日：2001-04-19

申请号：PCT/US2000/024945

申请日：2000-09-12

IPC: B24B37/04 ,  B24B49/03 ,  G05B19/416 ,  H01L21/304 ,  H01L21/66 ,  G05B19/418 ,  G05B21/02

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  G05B19/4163 ,  G05B2219/37398 ,  G05B2219/37602 ,  G05B2219/45232 ,  G05B2219/49085

Abstract: A method for optimizing CMP (chemical mechanical polishing) processing of semiconductor wafers on a CMP machine. The optimization method includes the steps of polishing a test series of semiconductor wafers on a CMP machine. During the CMP processing, a film thickness is measured at a first point proximate to the center of each respective wafer using a film thickness detector coupled to the machine. A film thickness at a second point proximate to the outside edge of the respective wafers is also measured. Based upon the in-process film thickness measurements at the first point and the second points, the optimization process determines a polishing profile describing a removal rate and a removal uniformity with respect to a set of process variables. The process variables include different CMP machine settings for the polishing process, such as the amount of down force applied to the wafer. The polishing profile is subsequently used to polish production wafers accordingly. For each production wafer, their respective removal rate and removal uniformity is determined by measuring a film thickness at the center of each production wafer and a film thickness at the outside edge of each production wafer using the film thickness detector. Based upon these measurements, the set of process variables is adjusted in accordance the removal rate and the removal uniformity measurements to optimize the CMP process for the production wafer as each respective wafer is being polished.

Abstract translation: 一种用于优化CMP机器上的半导体晶片的CMP（化学机械抛光）处理的方法。 优化方法包括在CMP机器上抛光半导体晶片的测试系列的步骤。 在CMP处理期间，使用耦合到机器的膜厚检测器在靠近每个相应晶片的中心的第一点处测量膜厚度。 还测量了在相应晶片的外边缘附近的第二点处的膜厚度。 基于在第一点和第二点处的过程中膜厚度测量，优化过程确定描述相对于一组过程变量的去除速率和去除均匀性的抛光轮廓。 过程变量包括抛光过程的不同CMP机器设置，例如施加到晶片的向下力的量。 随后抛光轮廓被用于相应地抛光生产晶片。 对于每个生产晶片，通过使用膜厚检测器测量每个生产晶片的中心处的膜厚度和在每个生产晶片的外边缘处的膜厚度来确定其各自的去除速率和去除均匀性。 基于这些测量，根据去除速率和去除均匀度测量来调整一组工艺变量，以在每个相应的晶片被抛光时优化用于生产晶片的CMP工艺。

公开(公告)号：WO01015861A1

公开(公告)日：2001-03-08

申请号：PCT/JP2000/005762

申请日：2000-08-25

IPC: B24B37/013 ,  B24B37/20 ,  B24B37/24 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  B24D13/12 ,  B24D13/14 ,  B24B37/04 ,  B24B37/00 ,  H01L21/304

CPC classification number: B24B37/013 ,  B24B37/205 ,  B24B49/04 ,  B24B49/12

Abstract: For detecting the end point of polishing by a CMP method, a transparent window member (11) having a positive refractive index distribution is provided in a light transmission area of a polishing pad. The window member (11) has areas (11a) having a high refractive index and areas (11b) having a low refractive index in its window face. In a cross section, perpendicular to the window face the high-refractive index areas (11a) and the low-refractive index areas (11b) are alternated in stripes. They are in a Fresnel zone plate arrangement where the first area (center circle) is a bright one (area having a high refractive index) in the window face. The Fresnel zone plates (F) are arrayed in a matrix in the window face of the window member (11).

Abstract translation: 为了通过CMP方法检测抛光的终点，在抛光垫的光透射区域中设置具有正折射率分布的透明窗构件（11）。 窗构件（11）具有折射率高的区域（11a）和窗口面折射率低的区域（11b）。 在垂直于面对高折射率区域（11a）和低折射率区域（11b）的窗口的横截面中，条纹交替。 它们处于菲涅尔带片布置中，其中第一区域（中心圆）是窗口中的明亮区域（具有高折射率的区域）。 菲涅耳带板（F）以窗口部件（11）的窗面内的矩阵排列。

公开(公告)号：WO01010599A1

公开(公告)日：2001-02-15

申请号：PCT/US2000/021486

申请日：2000-08-07

IPC: B24B37/005 ,  B24B37/013 ,  B24B37/20 ,  B24B49/04 ,  B24B49/12 ,  B24D7/12 ,  B24B37/04

CPC classification number: B24B37/205 ,  B24B37/0053 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12

Abstract: Method and apparatus for in-situ measurement of workpiece (140) displacement during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus (165) includes a platen (210) having a polishing material (170) attached thereto and a distance measurement device attached (240) to the platen. The distance measurement device includes a light source (410) and a light sensor (420). Distance between the device (240) and the workpiece (140) is measured by transmitting light through apertures (510) formed within the platen (210) and the polishing material (170) toward the workpiece (140) and focusing the light reflected from the workpiece (140) on an element (420) within the sensor (240).

Abstract translation: 公开了用于在化学机械抛光期间原位测量工件（140）位移的方法和装置。 化学机械抛光装置（165）包括具有附接到其上的抛光材料（170）的压板（210）和与压板连接的距离测量装置（240）。 距离测量装置包括光源（410）和光传感器（420）。 通过将形成在压板（210）和抛光材料（170）内的孔（510）朝向工件（140）透射光来测量装置（240）和工件（140）之间的距离，并将来自 传感器（240）内的元件（420）上的工件（140）。

公开(公告)号：WO00012263A1

公开(公告)日：2000-03-09

申请号：PCT/US1999/019710

申请日：1999-08-30

IPC: B24B49/00 ,  H01L21/66 ,  B24B37/04 ,  B24B49/04

CPC classification number: B24B37/013 ,  B24B49/00 ,  H01L22/26

Abstract: A method and apparatus (110) for the wireless transfer of measurements made during chemical-mechanical planarization of semiconductor wafers with a planarizing machine. The apparatus (110) includes a sensor (190) connected to the semiconductor substrate (112) or a movable portion of the planarizing machine. The apparatus (110) further comprises a display spaced apart from the sensor (190) and a wireless communication link coupled between the sensor (190) and the display (169) to transmit a signal from the sensor (190) to the display (169). The wireless communication link may include an infrared link, a radio link, an acoustic link, or an inductive link. The sensor (190) may measure force, pressure, temperature, pH, electrical resistance or other planarizing parameters. The sensor (190) may also detect light reflected from a reflective surface of a substrate (112) that is used to calibrate the planarizing machine.

Abstract translation: 一种用于利用平面化机器在半导体晶片的化学 - 机械平面化期间进行无线传输测量的方法和装置（110）。 装置（110）包括连接到半导体衬底（112）的传感器（190）或平面化机器的可移动部分。 所述设备（110）还包括与所述传感器（190）间隔开的显示器以及耦合在所述传感器（190）和所述显示器（169）之间的无线通信链路，用于将来自所述传感器（190）的信号传输到所述显示器 ）。 无线通信链路可以包括红外线链路，无线电链路，声学链路或电感链路。 传感器（190）可以测量力，压力，温度，pH，电阻或其它平面化参数。 传感器（190）还可以检测从用于校准平面化机器的基板（112）的反射表面反射的光。

公开(公告)号：WO99023449A1

公开(公告)日：1999-05-14

申请号：PCT/US1998/016902

申请日：1998-08-14

IPC: G01N21/47 ,  B24B37/013 ,  B24B49/12 ,  B24B51/00 ,  G01B11/06 ,  H01L21/304 ,  H01L21/66

CPC classification number: B24B37/013 ,  B24B49/12 ,  B24B51/00 ,  G01B11/0683 ,  H01L22/26

Abstract: A predicted in-situ reflectivity measurement (ISRM) trace is calculated for a substrate undergoing a chemical mechanical polishing. This predicted ISRM trace is an estimate of the measured reflectivity of the substrate as a function of time. During polishing, a laser interferometric detector is used to measure the reflectivity of the substrate and generate a measured ISRM trace. The measured trace is compared to the predicted trace, and the polishing process may be adjusted based on the comparison. For example, the predicted ISRM trace may be used to detect the polishing endpoint.

Abstract translation: 对于进行化学机械抛光的基底，计算预测的原位反射率测量（ISRM）迹线。 这个预测的ISRM曲线是基于测量的反射率作为时间的函数的估计。 在抛光期间，使用激光干涉检测器来测量衬底的反射率并产生测量的ISRM迹线。 将测量的迹线与预测迹线进行比较，并且可以基于比较来调整抛光过程。 例如，预测的ISRM迹线可用于检测抛光终点。

公开(公告)号：WO1998014306A1

公开(公告)日：1998-04-09

申请号：PCT/US1997018346

申请日：1997-10-03

Applicant: EXCLUSIVE DESIGN COMPANY, INC. ,  WILLIAMS, Roger, O.

Inventor： EXCLUSIVE DESIGN COMPANY, INC.

IPC: B24B37/04

CPC classification number: B24B37/013 ,  B24B37/042 ,  B24B49/03 ,  Y10S438/959

Abstract: An improved method and apparatus for controlling the depth of removal by a chemical mechanical polishing of a selected material on a supporting semiconductor underlayer where it is desired to terminate removal of the selected material, such as silicon oxide, at a specified depth. In accordance with this novel method and system, the selected material such as a surface oxidization layer is polished to initiate removal thereof in the direction of the material-underlayer interface. This system includes three primary components: a chemical mechanical wafer polishing machine, a semiconductor thin film thickness measurement device, and statistical signal process algorithm and its associated computer system provides a chemical mechanical polishing system control by analysis and prediction of the current and future removal rates based on performance of past ratios for the before and after semiconductor thin film thickness measurements.

Abstract translation: 一种改进的方法和装置，用于通过在支撑半导体底层上的所选材料的化学机械抛光来控制去除深度，其中期望在特定深度处终止所选材料（例如氧化硅）的移除。 根据这种新颖的方法和系统，抛光所选择的材料如表面氧化层，以在材料 - 底层界面的方向上开始去除它。 该系统包括三个主要组件：化学机械晶片抛光机，半导体薄膜厚度测量装置和统计信号处理算法及其相关的计算机系统通过分析和预测当前和未来的去除率来提供化学机械抛光系统控制 基于前后半导体薄膜厚度测量的性能。