公开(公告)号：WO98055264A1

公开(公告)日：1998-12-10

申请号：PCT/US1998/011038

申请日：1998-05-28

IPC: B24B37/013 ,  B24B49/00 ,  B24B49/04 ,  B24B53/007 ,  B24B53/017

CPC classification number: B24B37/013 ,  B24B49/003 ,  B24B49/04 ,  B24B53/017

Abstract: The chemical-mechanical polishing (CMP) of products in general and semiconductor wafers in particular is controlled by monitoring the acoustic emissions generated during CMP. A signal (54) is generated with the acoustic emissions which is reflective of the energy of the acoustic emissions. The signals are monitored (75) and the CMP process (48/52) is adjusted in response to a change in the acoustic emission energy. Changes in the acoustic emission energy signal can be used to determine the end-point for CMP, particularly when fabricating semiconductor wafers for planarizing/polishing a given surface thereof. Long-term changes in the acoustic emission energy signals resulting from process changes including, for example, wear of the polishing pad (20), can also be detected with the acoustic emission energy signals so that desired or necessary process adjustments, such as a reconditioning of the polishing pad (20), for example, can be detected or the process can be stopped or an alarm signal can be generated when unacceptable process abnormalities occur.

Abstract translation: 特别是产品的化学 - 机械抛光（CMP）特别是通过监测在CMP期间产生的声发射来控制。 产生具有反映声发射能量的声发射的信号（54）。 监测信号（75），并且响应于声发射能量的变化来调整CMP处理（48/52）。 可以使用声发射能量信号的变化来确定CMP的终点，特别是当制造用于平坦化/抛光给定表面的半导体晶片时。 还可以利用声发射能量信号来检测由包括例如抛光垫（20）的磨损在内的过程变化引起的声发射能量信号的长期变化，从而使得所需的或必需的过程调节，例如修复 可以检测到抛光垫（20），或者可以停止处理，或者当发生不可接受的过程异常时可以产生报警信号。

公开(公告)号：WO2022052899A1

公开(公告)日：2022-03-17

申请号：PCT/CN2021/116845

申请日：2021-09-07

Applicant: 湖南理工学院

Inventor： 张晓红 ,  石照耀 ,  丁跃浇 ,  宁立伟 ,  汤小红 ,  张松辉 ,  李锶 ,  李伟 ,  田万一

IPC: B24B55/02 ,  B24B53/007 ,  B24B49/14 ,  B24B41/06 ,  B24B49/00

Abstract: 一种基于冲击波空化效应的纳米层（41）润滑金刚石砂轮（20）磨削方法，当气压调节阀（9）打开后，加速管（10）产生的激波推动纳米颗粒（11）向前运动，再由小拉法尔管（29）加速使其获得较高的初速度；同时冲击波提速模块的一个波源用来产生高频率高强度的冲击波，冲击具有初速度的纳米颗粒（11），使其沿大拉法尔管（19）的轴向不断向下加速，直至以最高速度嵌入砂轮（20）表面形成纳米层（41）；另一个波源则用来清洗砂轮（20）表面杂质；在加工过程中纳米层（41）的纳米颗粒（11）自主释放在磨削核心区，实现磨削区内部自润滑冷却。

公开(公告)号：WO2017072726A1

公开(公告)日：2017-05-04

申请号：PCT/IB2016/056525

申请日：2016-10-28

Applicant: ANCORA S.P.A.

Inventor： CORRADINI, Mario

IPC: B24B53/007 ,  B24B7/22 ,  B24B27/06 ,  B24B55/02

CPC classification number: B24B53/007 ,  B24B7/22 ,  B24B27/06 ,  B24B55/02

Abstract: Device (1) for working ceramic objects provided with at least one tool (2) operating in rotation to cut at least one ceramic article (4) positioned on a worktop (5), and comprising: at least one cooling element (6) adapted to send compressed air in correspondence with the area of contact between the tool and the article; at least one cleaning element (9) adapted to send compressed air from the tool and distinguished from the cooling element (6).

Abstract translation: 一种用于加工陶瓷物体的设备（1），该陶瓷加工设备具有至少一个旋转操作的工具（2）以切割位于工作台（5）上的至少一个陶瓷制品（4），并且包括：at 至少一个冷却元件（6），其适于根据工具和物品之间的接触区域发送压缩空气; 至少一个清洁元件（9），其适于从工具发送压缩空气并与冷却元件（6）区分开。

公开(公告)号：WO2011133386A3

公开(公告)日：2012-02-02

申请号：PCT/US2011032447

申请日：2011-04-14

Applicant: APPLIED MATERIALS INC ,  DHANDAPANI SIVAKUMAR ,  QIAN JUN ,  COCCA CHRISTOPHER D ,  FUNG JASON GARCHEUNG ,  CHANG SHOU-SUNG ,  GARRETSON CHARLES C ,  MENK GREGORY E ,  TSAI STAN D

Inventor： DHANDAPANI SIVAKUMAR ,  QIAN JUN ,  COCCA CHRISTOPHER D ,  FUNG JASON GARCHEUNG ,  CHANG SHOU-SUNG ,  GARRETSON CHARLES C ,  MENK GREGORY E ,  TSAI STAN D

IPC: B24B37/00 ,  B24B49/03 ,  B24B53/007 ,  H01L21/304

CPC classification number: B24B53/017 ,  B24B37/042

Abstract: Embodiments described herein use closed-loop control (CLC) of conditioning sweep to enable uniform groove depth removal across the pad, throughout pad life. A sensor integrated into the conditioning arm enables the pad stack thickness to be monitored in-situ and in real time. Feedback from the thickness sensor is used to modify pad conditioner dwell times across the pad surface, correcting for drifts in the pad profile that may arise as the pad and disk age. Pad profile CLC enables uniform reduction in groove depth with continued conditioning, providing longer consumables lifetimes and reduced operating costs.

Abstract translation: 本文描述的实施例使用调节扫描的闭环控制（CLC），以在整个衬垫寿命期间跨越焊盘实现均匀的凹槽深度去除。 集成到调节臂中的传感器使得可以在现场和实时监测焊盘堆叠厚度。 来自厚度传感器的反馈用于修改焊盘表面上的焊盘调节器停留时间，以校正可能随焊盘和磁盘寿命而出现的焊盘轮廓中的漂移。 焊盘轮廓CLC可以通过持续的调节来均匀地减小槽深度，提供更长的消耗品寿命和降低的操作成本。

公开(公告)号：WO2010019774A2

公开(公告)日：2010-02-18

申请号：PCT/US2009/053717

申请日：2009-08-13

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  O'MALLEY, Keith, L.

Inventor： O'MALLEY, Keith, L.

IPC: B24B53/007 ,  B24B53/053 ,  B23Q3/04 ,  B23Q3/06

CPC classification number: B24B53/003 ,  B24B53/007 ,  B24B53/053

Abstract: A truing and dressing machine for profiling an abrasive wheel. The truing and dressing machine includes a truing wheel assembly for positioning the truing wheel relative to an abrasive wheel mounted on an abrasive wheel spindle. The truing wheel assembly includes a truing wheel swivel located between a truing wheel spindle housing and a reciprocation slide that is attached to an infeed slide. An infeed slide swivel is located between the infeed slide and a bottom support swivel plate which is rotatably connected to a base plate. Utilization of both an infeed slide swivel and a truing wheel swivel allows for dressing both sides and the face of the abrasive wheel without having to remove, flip, and reinsert the abrasive wheel into the machine.

Abstract translation: 用于轮廓研磨的修整和修整机。 修整和修整机包括修整轮组件，用于相对于安装在砂轮主轴上的研磨轮定位修整轮。 修整轮组件包括位于修整轮主轴壳体和附接到进给滑块的往复运动滑块之间的修整轮旋转件。 进料滑块旋转件位于进料滑块和可旋转地连接到基板的底部支撑旋转板之间。 使用进给滑块回转和修整轮回转可以使磨砂轮的两侧和面均匀，而无需将砂轮拆下，翻转并重新插入机器。

公开(公告)号：WO2009114413A1

公开(公告)日：2009-09-17

申请号：PCT/US2009/036313

申请日：2009-03-06

Applicant: MORGAN ADVANCED CERAMICS, INC. ,  SLUTZ, David, E.

Inventor： SLUTZ, David, E.

IPC: B24B37/04 ,  B24B53/007 ,  B24B53/12 ,  B24D3/14 ,  B24D18/00

CPC classification number: B24B53/017 ,  B24B53/12 ,  B24D3/14 ,  B24D18/00

Abstract: The present invention relates to a composite material having non-planar geometries and edge-shaving surfaces comprising a CVD diamond coating applied to a composite substrate made from a ceramic material and a preferably unreacted carbide-forming material of various configurations and for a variety of applications.

Abstract translation: 本发明涉及具有非平面几何形状和边缘剃削表面的复合材料，该复合材料包括施加到由陶瓷材料制成的复合基材上的CVD金刚石涂层，以及各种构造的优选未反应的碳化物形成材料和用于各种应用 。

公开(公告)号：WO2005095055A1

公开(公告)日：2005-10-13

申请号：PCT/US2005/002309

申请日：2005-01-25

Applicant: 3M INNOVATIVE PROPERTIES COMPANY

Inventor： PALMGREN, Gary M., ,  GOERS, Brian D., ,  PYSHER, Douglas J.,

IPC: B24B53/007

CPC classification number: B24B53/017 ,  B24B37/042 ,  B24B37/046

Abstract: A wafer planarization process with a conditioning tool (14) having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool (14). The electrical insulator extends the useful life of the abrasive surface of the conditioning tool (14) by reducing the level of electrochemically driven corrosion.

Abstract translation: 具有调节工具（14）的晶片平面化工艺，所述调节工具具有使所述调节工具（14）的磨料表面电绝缘的电绝缘体。 电绝缘体通过减少电化学驱动腐蚀的水平来延长调节工具（14）的研磨表面的使用寿命。

公开(公告)号：WO2004077520A3

公开(公告)日：2004-10-14

申请号：PCT/US2004005563

申请日：2004-02-23

Applicant: ROHM & HAAS ELECT MATERIALS

Inventor： LAWING ANDREW SCOTT

IPC: B24B53/007 ,  B24B53/017 ,  B24B53/00

CPC classification number: B24B53/017

Abstract: Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra = 60%, or alternatively has an asymmetric surface height probability distribution characterized by an asymmetry factor A10

Abstract translation: 公开了当平坦化晶片表面时具有导致高平坦化效率的表面形态的抛光垫。 一个调理抛光垫是无孔的，具有表面粗糙度Ra <3微米的表面高度分布。 另一个调理的抛光垫是多孔的并且具有表面高度比R> = 60％的表面高度概率分布，或者具有以不对称因子A10 <= 0.50表征的不对称表面高度概率分布。 还公开了使用抛光垫调整和平坦化晶片的方法。

公开(公告)号：WO02053320A9

公开(公告)日：2004-03-04

申请号：PCT/US0150769

申请日：2001-10-23

Applicant: STRASBAUGH

Inventor： HALLEY DAVID G

IPC: B24B9/06 ,  B24B37/013 ,  B24B37/04 ,  B24B37/30 ,  B24B49/02 ,  B24B49/12 ,  B24B53/007 ,  B24B53/017 ,  B24B57/02 ,  H01L21/687 ,  B24B5/00

CPC classification number: B24B37/30 ,  B24B9/065 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042 ,  B24B49/02 ,  B24B49/12 ,  B24B53/017 ,  B24B57/02 ,  H01L21/68728

Abstract: The present invention provides an improved planarization apparatus for chemical mechanical planarization. In an exemplary embodiment, the invention provides an apparatus having a back support (118) operatively coupled to the edge support, the bac support having at least one surface for supporting a back side of the object during planarization. The surface for supporting the back side provides a substantially friction free interface between the surface and the back side of the object to allow the object to move across the surface of the back support. In some embodiments, an edge support (120) is movably coupled to an edge of an object for supporting and positioning the object during planarization.

Abstract translation: 本发明提供一种用于化学机械平面化的改进的平面化装置。 在一个示例性实施例中，本发明提供一种具有可操作地耦合到边缘支撑件的后支撑件（118）的装置，所述支架具有至少一个用于在平坦化期间支撑物体的背面的表面。 用于支撑背面的表面在物体的表面和背面之间提供基本上无摩擦的界面，以允许物体移动穿过背部支撑件的表面。 在一些实施例中，边缘支撑件（120）可移动地联接到物体的边缘，以在平坦化期间支撑和定位物体。

公开(公告)号：WO02060643A9

公开(公告)日：2003-09-12

申请号：PCT/US0151079

申请日：2001-10-23

Applicant: STRASBAUGH

Inventor： HALLEY DAVID G

IPC: B24B9/06 ,  B24B37/04 ,  B24B41/04 ,  B24B47/10 ,  B24B49/02 ,  B24B49/12 ,  B24B53/007 ,  B24B57/02 ,  H01L21/304 ,  H01L21/687 ,  B24B7/22 ,  B24B1/00

CPC classification number: B24B9/065 ,  B24B37/013 ,  B24B37/04 ,  B24B37/042 ,  B24B37/30 ,  B24B41/04 ,  B24B47/10 ,  B24B49/02 ,  B24B49/12 ,  B24B53/017 ,  B24B57/02 ,  H01L21/68728

Abstract: The present invention provides an improved planarization or polishing apparatus for chemical mechanical planarization and other types of polishing such as metal polishing and optical polishing. In an exemplary embodiment, an apparatus for polishing an object (115) comprises a pad (117) having a polishing surface to be placed on the target surface of the object (115) to be polished. A pad drive member (116) is connected to the pad to move the pad relative to the object to chenge a position of the polishing surface of the pad on the target surface of the object. A drive support (251) is movably coupled with the pad drive member (116) to support the pad drive member (116) for rotation relative to the drive support around a pivot point (252) which is disposed substantially on the target surface of the object (115) during polishing.

Abstract translation: 本发明提供了用于化学机械平面化和其它类型抛光的改进的平面化或抛光装置，例如金属抛光和光学抛光。 在一个示例性实施例中，用于抛光物体（115）的装置包括具有待抛光的物体（115）的目标表面上的抛光表面的焊盘（117）。 衬垫驱动构件（116）连接到衬垫以使衬垫相对于物体移动以使衬垫的抛光表面的位置在目标表面上沉降。 驱动支撑件（251）可与垫驱动构件（116）可移动地联接，以支撑垫驱动构件（116），用于相对于围绕枢转点（252）的驱动支撑件旋转，该枢转点基本上设置在 物体（115）。