Abstract:
There is disclosed a method of making a material comprising an assembly of at least one spun yarn, comprising: synthetic inorganic fibers, such as carbon, metal, oxides, carbides or alloys or combinations thereof, wherein a majority of the fibers: (a) are longer than 300 µm, (b) have a diameter ranging from 0.25 nm and 700 nm, and (c) are substantially crystalline, wherein the yarn has substantial flexibility and uniformity in diameter. In one embodiment, the method comprises spinning yarn by pulling fibers from a bulk material with at least one spinner that has real time feedback controls.
Abstract:
A method for detecting particles is presented. The method comprises generating a reaction to a plurality of particles using a converter material, wherein the converter material is operable to interact with the plurality of particles, and wherein a subset of the plurality of particles comprises neutrons. Further, the method comprises converting a response to the reaction to a readable electrical signal using a sensor, wherein the sensor comprises an array of pixels. Also, the method comprises processing the readable electrical signal from the sensor to generate information for each pixel on the array of pixels and transmitting the information to a processing unit. Also, the method comprises executing a discrimination procedure using the information for distinguishing between instances of impingement of neutrons and non-neutron particles on the array of pixels. Further, the method comprises determining the radionuclide or non-radionuclide source of origin of the neutron and non-neutron particles.
Abstract:
Self-aligned carbon nanostructure field effect transistor structures are provided, which are formed using selective dielectric deposition techniques. For example, a transistor device includes an insulating substrate and a gate electrode embedded in the insulating substrate. A dielectric deposition-prohibiting layer is formed on a surface of the insulating substrate surrounding the gate electrode. A gate dielectric is selectively formed on the gate electrode. A channel structure (such as a carbon nanostructure) is disposed on the gate dielectric A passivation layer is selectively formed on the gate dielectric. Source and drain contacts are formed on opposing sides of the passivation layer in contact with the channel structure. The dielectric deposition-prohibiting layer prevents deposition of dielectric material on a surface of the insulating layer surrounding the gate electrode when selectively forming the gate dielectric and passivation layer.
Abstract:
Methods of concurrently forming ammonia and solid carbon products include reacting a carbon oxide, nitrogen, and a reducing agent at preselected reaction conditions in the presence of a catalyst to form a solid carbon product entrained in a tail gas mixture comprising water and ammonia; separating entrained solid carbon product from the tail gas mixture; and recovering water and ammonia from the tail gas mixture. Systems for forming ammonia and solid carbon products from a gaseous source containing carbon oxides include mixing means for mixing the gaseous source with a reducing agent, reactor means for reacting at least a portion of the gaseous source with the reducing agent in the presence of a catalyst to produce the solid carbon products and a tail gas mixture comprising the ammonia, and solid separation means for separating the solid carbon products from the tail gas mixture.
Abstract:
본 발명은 카본나노튜브 및 이들의 제조방법에 관한 것으로, 촉매성분과 활성성분의 이성분계 카본나노튜브 촉매를 포함하되, 벌크 밀도(bulk density)가 80~250kg/m 3 이고, 편평률이 0.9~1.0이고, 입도 분포값(Dcnt)이 0.5~1.0인 포테이토 (potato) 또는 구형(sphere)의 비-번들(non-bundle) 타입 카본나노튜브를 고 수율로 제공하는 효과가 있다.
Abstract:
Syntheses of carbon nanotubes (CNT) are disclosed. The syntheses can take place on a thermally oxidized silicon surface placed inside a furnace prior to a reaction. The setup can have many variables that could affect the resulting CNT arrays, including flow rate and composition of carrier gas, flow rate and composition of precursor solution, and temperature. By varying such variables the density of the resulting CNT arrays can be controlled.