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    TUNGSTEN BULK POLISHING METHOD WITH IMPROVED TOPOGRAPHY
    11.
    发明申请
    TUNGSTEN BULK POLISHING METHOD WITH IMPROVED TOPOGRAPHY 审中-公开

    公开(公告)号：WO2019139828A1

    公开(公告)日：2019-07-18

    申请号：PCT/US2019/012268

    申请日：2019-01-04

    Applicant: CABOT MICROELECTRONICS CORPORATION

    Inventor： WARD, William J. ,  CARNES, Matthew E. ,  CUI, Ji ,  LONG, Kim

    IPC: H01L21/321 ,  H01L21/304 ,  H01L21/3105 ,  C09G1/02 ,  C09K3/14

    Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising providing a substrate comprising a tungsten layer on a surface of the substrate and a silicon oxide layer on a surface of the substrate, providing a chemical-mechanical polishing composition comprising a tungsten layer and a silicon oxide layer using a chemical-mechanical polishing composition comprising a) surface-modified colloidal silica particles, comprising a negatively-charged group on the surface of the particles, wherein the surface-modified colloidal silica particles have a negative charge, a particle size of about 90 nm to about 350 nm, and a zeta potential of about -20 mV to about -70 mV at a pH of about 2, b) an iron compound, c) a stabilizing agent, and d) an aqueous carrier, and contacting the substrate with a polishing pad and the chemical mechanical polishing composition to polish the substrate.

    CONDITIONING DISKS TO CONDITION SEMICONDUCTOR WAFER POLISHING PADS
    12.
    发明申请
    CONDITIONING DISKS TO CONDITION SEMICONDUCTOR WAFER POLISHING PADS 审中-公开

    公开(公告)号：WO2018118047A1

    公开(公告)日：2018-06-28

    申请号：PCT/US2016/068054

    申请日：2016-12-21

    Applicant: INTEL CORPORATION

    Inventor： TREGUB, Alexander ,  DELBRIDGE, Ken A.

    IPC: H01L21/304 ,  H01L21/306 ,  H01L21/321

    CPC classification number: B24B53/017 ,  B24B37/105

    Abstract: Conditioning disks to condition semiconductor wafer polishing pads are disclosed. An example chemical mechanical planarization conditioning disk includes a substrate and a nodule projecting a first height from the substrate. The conditioning disk further includes a protective structure projecting from the substrate. The protective structure is adjacent the nodule. The protective structure has an upper surface at a second height relative to the baseline surface. An area of the upper surface of the protective structure is greater than a top surface of the nodule.

    SILICON CHALCOGENATE PRECURSORS, METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS, AND RELATED METHODS OF FORMING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES
    13.
    发明申请
    SILICON CHALCOGENATE PRECURSORS, METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS, AND RELATED METHODS OF FORMING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES 审中-公开
    硅烷基化合物前体，形成硅烷基化合物前体的方法以及形成氮化硅和半导体结构的相关方法

    公开(公告)号：WO2018017317A1

    公开(公告)日：2018-01-25

    申请号：PCT/US2017/040662

    申请日：2017-07-05

    Applicant: MICRON TECHNOLOGY, INC.

    Inventor： QUICK, Timothy A. ,  PANDEY, Sumeet C. ,  UHLENBROCK, Stefan

    IPC: H01L21/02 ,  H01L21/321 ,  H01L21/324

    Abstract: A silicon chalcogenate precursor comprising the chemical formula of Si(XR 1 ) n R 2 4-n , where X is sulfur, selenium, or tellurium, R 1 is hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, each R 2 is independently hydrogen, an alkyl group, a substituted alkyl group, an alkoxide group, a substituted alkoxide group, an amide group, a substituted amide group, an amine group, a substituted amine group, or a halogen group, and n is 1, 2, 3, or 4. Methods of forming the silicon chalcogenate precursor, methods of forming silicon nitride, and methods of forming a semiconductor structure are also disclosed.

    Abstract translation: 一种硅硫族化合物前体，其包含化学式Si（XR 1）nR 2 4-n，其中X是硫，硒或碲，R 1是氢，烷基，取代的烷基，醇盐基团，取代的醇盐基团， 酰胺基，取代酰胺基，胺基，取代胺基或卤素基，各R 2独立地为氢，烷基，取代烷基，烷氧基，取代烷氧基，酰胺基 ，取代的酰胺基团，胺基团，取代的胺基团或卤素基团，并且n是1,2,3或4.形成硅硫族化物前体的方法，形成氮化硅的方法以及形成 还公开了一种半导体结构。

    PAD STRUCTURE AND FABRICATION METHODS
    14.
    发明申请
    PAD STRUCTURE AND FABRICATION METHODS 审中-公开
    垫结构和制造方法

    公开(公告)号：WO2017155969A1

    公开(公告)日：2017-09-14

    申请号：PCT/US2017/021119

    申请日：2017-03-07

    Applicant: APPLIED MATERIALS, INC.

    Inventor： NG, Hou T. ,  PATIBANDLA, Nag B. ,  BAJAJ, Rajeev ,  REDFIELD, Daniel ,  CHOCKALINGAM, Ashwin ,  YAMAMURA, Mayu ,  CORNEJO, Mario

    IPC: H01L21/306 ,  H01L21/304 ,  H01L21/321 ,  H01L21/02

    CPC classification number: B33Y10/00 ,  B24B37/22 ,  B29K2105/0058 ,  B33Y30/00 ,  B33Y80/00 ,  G03F7/0035 ,  G03F7/2014

    Abstract: A method and apparatus for manufacturing polishing articles used in polishing processes are provided. In one implementation, a method of forming a polishing pad is provided. The method comprises depositing an uncured first layer of a pad forming photopolymer on a substrate. The method further comprises positioning a first optical mask over the first layer of the uncured pad forming photopolymer. The first optical mask includes a patterned sheet of material having at least one aperture. The method further comprises exposing the uncured first layer of the pad forming photopolymer to electromagnetic radiation to selectively polymerize exposed portions of the uncured first layer of the pad forming photopolymer to form pad-supporting structures within the first layer of pad forming photopolymer.

    Abstract translation: 提供了用于制造用于抛光工艺的抛光制品的方法和设备。 在一个实施方式中，提供了一种形成抛光垫的方法。 该方法包括在衬底上沉积未固化的第一层形成光刻胶的光聚合物。 该方法还包括将第一光学掩模定位在未固化的焊盘形成光聚合物的第一层上。 第一光学掩模包括具有至少一个孔的图案化片材。 该方法还包括将未固化的形成光聚合物的垫的第一层暴露于电磁辐射，以选择性地聚合形成光聚合物的垫的未固化的第一层的曝光部分，以在形成第一垫的光聚合物层内形成垫支撑结构。 >

    METHOD AND APPARATUS FOR PULSE ELECTROCHEMICAL POLISHING
    18.
    发明申请
    METHOD AND APPARATUS FOR PULSE ELECTROCHEMICAL POLISHING 审中-公开
    脉冲电化学抛光方法与装置

    公开(公告)号：WO2013173998A1

    公开(公告)日：2013-11-28

    申请号：PCT/CN2012/075990

    申请日：2012-05-24

    Applicant: ACM RESEARCH (SHANGHAI) INC. ,  WANG, Jian ,  JIN, Yinuo ,  WANG, Jun ,  WANG, Hui

    Inventor： WANG, Jian ,  JIN, Yinuo ,  WANG, Jun ,  WANG, Hui

    IPC: H01L21/321 ,  B23H3/02 ,  B24B57/02 ,  C25F3/16

    CPC classification number: H01L21/32115 ,  C25F3/16 ,  C25F3/30 ,  C25F7/00 ,  H01L22/12 ,  H01L22/20

    Abstract: A method and apparatus for pulse electrochemical polishing a wafer are disclosed. The method comprises steps of: establishing a duty cycle table showing all points on the wafer, a removal thickness corresponding to every point and a duty cycle corresponding to the removal thickness; driving a wafer chuck (5) holding and positioning the wafer (8) to move at a preset speed so that a special point on the wafer (8) is right above a nozzle (6) ejecting charged electrolyte (7) onto the wafer (8); looking up the duty cycle table and obtaining the removal thickness and the duty cycle corresponding to the special point; and applying a preset pulse power source to the wafer (8) and the nozzle (6) and the actual polishing power source for polishing the special point being equal to the duty cycle multiplying by the preset power source.

    Abstract translation: 公开了用于脉冲电化学抛光晶片的方法和装置。 该方法包括以下步骤：建立表示晶片上所有点的占空比表，对应于每个点的去除厚度和对应于去除厚度的占空比; 驱动晶片卡盘（5），其保持并定位晶片（8）以预定速度移动，使得晶片（8）上的特殊点位于喷射带电电解质（7）到晶片上的喷嘴（6）的正上方 8）; 查找占空比表，获得与特殊点对应的去除厚度和占空比; 以及将预设的脉冲电源施加到晶片（8）和喷嘴（6）上的实际抛光功率源和用于抛光专用点的实际抛光功率等于乘以预设电源的占空比。

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