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公开(公告)号:WO2021253225A1
公开(公告)日:2021-12-23
申请号:PCT/CN2020/096347
申请日:2020-06-16
申请人: 广东省科学院半导体研究所
IPC分类号: H01L23/31 , H01L23/498 , H01L23/48 , H01L21/56 , H01L25/065 , H01L21/486 , H01L21/568 , H01L2225/06541 , H01L23/3157 , H01L23/49827 , H01L25/0657
摘要: 一种芯片封装结构及方法,采用了背对背的封装结构,并通过完全穿过两个芯片的TSV孔,或TSV和TMV孔的配合实现芯片间的电性连接。如此,将芯片贴合之前可以不用预先在芯片形成穿过硅材料的TSV孔,可以降低对芯片贴合对准精确性的要求,降低了工艺难度。另外由于采用背对背的封装工艺,可以提高芯片的散热效率低,并且可以避免因芯片之间存在不同膨胀系数的材料导致电路破裂的问题。
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公开(公告)号:WO2021194858A1
公开(公告)日:2021-09-30
申请号:PCT/US2021/023038
申请日:2021-03-18
发明人: PAYNTER, Charles David , LANE, Ryan , EATON, John , MANO, Amit
IPC分类号: H01L23/552 , H01L25/065 , H01L23/538 , H01L21/683 , H01L25/00 , H01L21/56 , H01L21/568 , H01L21/6835 , H01L2221/68345 , H01L2221/68354 , H01L2221/68386 , H01L2224/131 , H01L2224/16227 , H01L2224/73253 , H01L2224/81005 , H01L2224/81815 , H01L2224/95 , H01L2225/06517 , H01L2225/0652 , H01L2225/06537 , H01L2225/06562 , H01L2225/06572 , H01L2225/1023 , H01L2225/1058 , H01L2225/107 , H01L2225/1088 , H01L23/13 , H01L23/49816 , H01L23/5385 , H01L23/5389 , H01L23/66 , H01L24/13 , H01L24/16 , H01L24/73 , H01L24/81 , H01L25/03 , H01L25/0652 , H01L25/0657 , H01L25/105 , H01L25/50 , H01L2924/10253 , H01L2924/10272 , H01L2924/10329 , H01L2924/12041 , H01L2924/1434 , H01L2924/15311 , H01L2924/15321 , H01L2924/15331 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/3025 , H05K1/0213 , H05K1/119 , H05K3/30 , H05K5/0017 , H05K9/0022
摘要: A device that includes a board, a package and a patch substrate. The board includes a cavity. The package is coupled to a first side of the board. The package includes a substrate and an integrated device coupled to the substrate. The integrated device is located at least partially in the cavity of the board. The patch substrate is coupled to a second side of the board. The patch substrate is located over the cavity of the board. The patch substrate is configured as an electromagnetic interference (EMI) shield for the package.
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公开(公告)号:WO2021191501A1
公开(公告)日:2021-09-30
申请号:PCT/FI2021/050195
申请日:2021-03-19
申请人: IQM FINLAND OY
发明人: HASSEL, Juha , LÄHTEENMÄKI, Pasi
IPC分类号: G06N10/00 , B82Y10/00 , H01L39/00 , H01L27/18 , H03D7/00 , H03F19/00 , H03B15/00 , H01L25/0657 , H01L25/105 , H03F2200/447 , H03K3/38
摘要: A cryogenic integrated circuit or integrated module (1201) comprises a travelling wave parametric amplifier or a Josephson parametric amplifier (1001). An oscillator (1004) is configured to produce an oscillating drive signal and to couple said oscillating drive signal into said amplifier. A signal input (1203) couples input signals into said amplifier. A biasing input (1205) couples biasing signals into said oscillator. A signal output conveys output signals from said amplifier out of the cryogenic integrated circuit or integrated module (1201).
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公开(公告)号:WO2021138794A1
公开(公告)日:2021-07-15
申请号:PCT/CN2020/070614
申请日:2020-01-07
发明人: HE, Jialan
IPC分类号: H01L21/98 , H01L21/78 , H01L25/18 , H01L2224/08145 , H01L2224/80006 , H01L2224/80895 , H01L2224/80896 , H01L2225/06524 , H01L24/08 , H01L24/80 , H01L25/0657 , H01L25/50 , H01L2924/1436 , H01L2924/1437 , H01L2924/14511
摘要: A method includes providing a structure including a carrier wafer, and a first device wafer with an adhesion layer between the carrier wafer and the first device wafer; and forming a plurality of first ablation structures in the structure, each of the plurality of first ablation structures extending through the first device wafer, the adhesion layer and a portion of the carrier wafer. Each of the plurality of first ablation structures has a portion inside the carrier wafer with a depth no greater than one half of a thickness of the carrier wafer. The first device wafer includes a plurality of first dies, each pair of adjacent first dies being separated by one of the plurality of first ablation structures. The plurality of first ablation structures are formed by either laser grooving or mechanical sawing.
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公开(公告)号:WO2015069184A1
公开(公告)日:2015-05-14
申请号:PCT/SG2014/000470
申请日:2014-10-07
申请人: THALES SOLUTIONS ASIA PTE LTD. , CNRS - CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (EPST) , NANYANG TECHNOLOGICAL UNIVERSITY
IPC分类号: H01L23/552 , H01L23/04 , H01L23/498 , H01L23/66 , H01L25/065 , H01L25/16 , H05K9/00 , B82Y10/00 , H01L2223/6616 , H01L2223/6683 , H01L2224/16225 , H01L2224/16227 , H01L2224/16235 , H01L2224/32165 , H01L2224/32225 , H01L2224/48091 , H01L2224/48106 , H01L2224/48227 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06548 , H01L2225/06572 , H01L23/3677 , H01L23/373 , H01L23/49827 , H01L23/49838 , H01L23/49877 , H01L23/5384 , H01L23/5385 , H01L24/16 , H01L24/17 , H01L24/32 , H01L24/48 , H01L24/73 , H01L25/0652 , H01L25/0655 , H01L25/0657 , H01L29/0676 , H01L29/413 , H01L2924/00014 , H01L2924/01006 , H01L2924/14 , H01L2924/1421 , H01L2924/1423 , H01L2924/157 , H01L2924/3025 , H05K9/0022
摘要: A method of fabricating an electrical guard structure for providing signal isolation is provided. The method includes providing a substrate having a mounting surface comprising a first area for hosting at least one electronic component. The method further comprises synthesizing a plurality of thread-like structures over the substrate to collectively form one or more electrically conductive projections extending transverse to the mounting surface. The one or more electrically conductive projections include one or more wall-like structures which are elongate parallel to the mounting surface. The electrically conductive projections can be transferred to another surface such as a major surface of a second substrate. There are further provided a support structure and a guard structure having the wall-like electrically conductive projections which are electrically grounded when in use to provide signal isolation.
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