公开(公告)号：WO2022212478A1

公开(公告)日：2022-10-06

申请号：PCT/US2022/022514

申请日：2022-03-30

Applicant: TERECIRCUITS CORPORATION

Inventor： SHEATS, Jayna

IPC: H01L33/00 ,  H01L23/00 ,  H01L21/67 ,  H01L21/683 ,  H01L25/075 ,  H01L27/15 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L24/97 ,  H01L25/0753 ,  H01L2933/0008 ,  H01L33/0093 ,  H01L33/0095

Abstract: Selective donor plates comprising at least one raised "mesa" and a release layer disposed over the top mesa surface are described, as well as their methods of use and their methods of fabrication. The use of selective donor plates including mesas and a release layer may enable reduced standoff distances and misplacement of components, as well as improve assembly time of devices.

公开(公告)号：WO2022002733A1

公开(公告)日：2022-01-06

申请号：PCT/EP2021/067266

申请日：2021-06-23

Applicant: IMEC VZW ,  UNIVERSITEIT GENT

Inventor： STERKEN, Tom ,  VAN STEENBERGE, Geert

IPC: H01L21/683 ,  H01L33/00 ,  H01L21/6835 ,  H01L2221/68318 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/95 ,  H01L2224/95136 ,  H01L33/0095

Abstract: A method for accurately positioning a component on a receiver substrate is provided, wherein the component is transferred from a donor substrate to a receiver substrate facing the donor substrate. The method comprises creating at least one nozzle at a predefined location in the area of contact between a blister forming layer on the donor substrate, and a component attached to the donor substrate by adhesion to the blister forming layer. The blister forming layer comprises at least a dynamic release layer, consisting of a dynamic release material, i.e. material that is vaporised when a laser beam of a given wavelength and flux density is directed to the donor substrate at the location of the component, from the back side of the donor substrate. The application of the laser beam thus creates a blister that contains vaporized dynamic release material.The blister expands until a nozzle is created, the nozzle allowing the vaporized dynamic release material to exit the blister and cause the release of the component and its propulsion towards the receiver substrate. The nozzle releases the material in the form of a narrow jet of gas, which improves the directionality of the transfer.

公开(公告)号：WO2021196311A1

公开(公告)日：2021-10-07

申请号：PCT/CN2020/086104

申请日：2020-04-22

Applicant: TCL华星光电技术有限公司

Inventor： 张玮 ,  孙洋 ,  柳铭岗 ,  陈书志

IPC: H01L21/677 ,  H01L21/683 ,  H01L33/48 ,  G09F9/33 ,  H01L21/67778 ,  H01L21/6835 ,  H01L2221/68313 ,  H01L2933/0033

Abstract: 本申请的微型发光二极管转移装置包括收集管和驱动装置，收集管具有相对设置的第一端和第二端，收集管包括收集口和存储管，收集口与存储管连通，收集口设置在第一端，驱动装置设置在第二端，驱动装置用于提供驱动力，其中，驱动装置用于提供驱动力以使得微型发光二极管从收集口被拾取到存储管内，存储管可层叠存储至少两个微型发光二极管。本申请可以有效提高转移速度。

公开(公告)号：WO2021122682A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/086335

申请日：2020-12-16

Applicant: HUAWEI TECHNOLOGIES DUESSELDORF GMBH ,  FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Inventor： OPPERMANN, Hans-Hermann ,  ZOSCHKE, Kai ,  MANIER, Charles-Alix

IPC: H01L21/683 ,  H01L33/00 ,  H01L25/075 ,  H01L21/6835 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/04026 ,  H01L2224/05644 ,  H01L2224/29144 ,  H01L2224/83815 ,  H01L2224/95 ,  H01L2224/95136 ,  H01L24/83 ,  H01L24/95 ,  H01L25/0753 ,  H01L33/0093

Abstract: Embodiments provide a method for manufacturing a device. The method comprises providing a first carrier having attached thereto a plurality of chips by means of an adhesive layer of the first carrier, a first surface of the plurality of chips being attached to the first carrier. Further, the method comprises selectively attaching a second surface of a subset of the plurality of chips to a conveyor carrier by means of a structured adhesive layer of the conveyor layer. Further, the method comprises selectively releasing the subset of the plurality of chips from the first carrier by means of debonding corresponding sections of the adhesive layer of the first carrier. Further, the method comprises attaching the first surface of the subset of the plurality of chips to a substrate of the device. Further, the method comprises releasing the subset of the plurality of chips from the conveyor carrier by means of debonding at least corresponding sections of the structured adhesive layer of the conveyor carrier. Thereby, at least one out of selectively releasing the proper subset of the plurality of chips from the first carrier and releasing the proper subset of the plurality of chips from the conveyor carrier is performed by means of laser debonding.

公开(公告)号：WO2021122449A1

公开(公告)日：2021-06-24

申请号：PCT/EP2020/085958

申请日：2020-12-14

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： KREINER, Laura ,  MÜLLER, Jens

IPC: H01L33/00 ,  H01L21/6835 ,  H01L2221/68354 ,  H01L24/95 ,  H01L25/0753 ,  H01L33/0095

Abstract: Das Verfahren zur Herstellung einer Beleuchtungsvorrichtung umfasst einen Verfahrensschritt A), in dem ein Waferverbund mit einer auf einem Trägersubstrat angeordneten Halbleiterschichtenfolge bereitgestellt wird. Weiter umfasst das Verfahren einen Verfahrensschritt B), in dem der Waferverbund in eine Vielzahl erster optoelektronischer Halbleiterchips mit jeweils einem Abschnitt der Halbleiterschichtenfolge und des Trägersubstrats durchtrennt wird. In einem weiteren Verfahrensschritt C) werden zumindest einige der ersten optoelektronischen Halbleiterchips auf einen ersten Hilfsträger übertragen. Des Weiteren umfasst das Verfahren einen Verfahrensschritt D), in dem die ersten optoelektronischen Halbleiterchips auf dem ersten Hilfsträger zur Anpassung an eine vorgegebene Form zugeschnitten werden. In einem weiteren Verfahrensschritt E) werden die ersten optoelektronischen Halbleiterchips von dem ersten Hilfsträger auf einen Träger übertragen.

公开(公告)号：WO2023273582A1

公开(公告)日：2023-01-05

申请号：PCT/CN2022/089778

申请日：2022-04-28

Applicant: 矽磐微电子（重庆）有限公司

Inventor： 谭富耀 ,  谢雷

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/56 ,  H01L21/78 ,  H01L21/60 ,  H01L21/568 ,  H01L21/67132 ,  H01L21/6835 ,  H01L2221/68336 ,  H01L2224/0231 ,  H01L24/03

Abstract: 本发明提供了一种芯片封装结构的形成方法，包括：提供承载于可拉伸层的多个裸片，各个裸片在可拉伸层上的排布保持晶圆切割后的排布；拉伸可拉伸层至相邻裸片之间的距离为预设距离；将拉伸后的可拉伸层以及所承载的各个裸片整体转移至载板；去除拉伸后的可拉伸层；在载板上形成塑封层，以包覆各个裸片；去除载板，在各个裸片的活性面与塑封层上形成电连接结构；切割形成多个芯片封装结构，每个芯片封装结构至少包括一个裸片。根据本发明的实施例，1)利用可拉伸层可将晶圆切割后的多个裸片一次完成转移，贴装效率高；不需要芯片装贴设备，贴装成本低。2)转移至载板的裸片保留了晶圆原本的布局，可使用简单的良率测试技术进行不良追溯。

公开(公告)号：WO2022126016A2

公开(公告)日：2022-06-16

申请号：PCT/US2021/063094

申请日：2021-12-13

Applicant: QORVO US, INC.

Inventor： COSTA, Julio C. ,  MAXIM, George ,  SCOTT, Baker

IPC: H01L25/10 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/00 ,  H01L23/552 ,  H01L21/56 ,  H01L21/568 ,  H01L21/6835 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68345 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/96 ,  H01L2225/1041 ,  H01L2225/1047 ,  H01L2225/1088 ,  H01L24/10 ,  H01L24/19 ,  H01L25/0655 ,  H01L25/105 ,  H01L25/50 ,  H01L2924/10329

Abstract: The present disclosure relates to a multi-level three-dimensional (3D) package with multiple package levels vertically stacked. Each package level includes a redistribution structure and a die section over the redistribution structure. Each die section includes a thinned die that includes substantially no silicon substrate and has a thickness between several micrometers and several tens of micrometers, a mold compound, and an intermediary mold compound. Herein, the thinned die and the mold compound are deposed over the redistribution structure, the mold compound surrounds the thinned die and extends vertically beyond a top surface of the thinned die to define an opening over the thinned die and within the mold compound, the intermediary mold compound resides over the thinned die and fills the opening within the inner mold compound, such that a top surface of the intermediary mold compound and a top surface of the mold compound are coplanar.

公开(公告)号：WO2021262421A1

公开(公告)日：2021-12-30

申请号：PCT/US2021/035914

申请日：2021-06-04

Applicant: TELEDYNE SCIENTIFIC & IMAGING, LLC

Inventor： URTEAGA, Miguel ,  CARTER, Andy

IPC: H01L29/08 ,  H01L21/683 ,  H01L23/36 ,  H01L29/40 ,  H01L29/417 ,  H01L21/331 ,  H01L29/737 ,  H01L29/45 ,  H01L29/47 ,  H01L21/3212 ,  H01L21/6835 ,  H01L21/8252 ,  H01L2221/68363 ,  H01L29/0821 ,  H01L29/401 ,  H01L29/41708 ,  H01L29/475 ,  H01L29/66318 ,  H01L29/7371

Abstract: A method of forming a bipolar transistor with a vertical collector contact requires providing a transistor comprising a plurality of epitaxial semiconductor layers on a first substrate, and providing a host substrate. A metal collector contact is patterned on the top surface of the host substrate, and the plurality of epitaxial semiconductor layers is transferred from the first substrate onto the metal collector contact on the host substrate. The first substrate is suitably the growth substrate for the plurality of epitaxial semiconductor layers. The host substrate preferably has a higher thermal conductivity than does the first substrate, which improves the heat dissipation characteristics of the transistor and allows it to operate at higher power densities. A plurality of transistors may be transferred onto a common host substrate to form a multi-finger transistor.

公开(公告)号：WO2021250333A1

公开(公告)日：2021-12-16

申请号：PCT/FR2021/050718

申请日：2021-04-26

Applicant: SOITEC

Inventor： BIARD, Hugo ,  GAUDIN, Gweltaz ,  ROUCHIER, Séverin ,  LANDRU, Didier

IPC: H01L21/683 ,  H01L21/6835 ,  H01L2221/6835 ,  H01L2221/68381

Abstract: L'invention concerne un substrat temporaire, démontable à une température de démontage supérieure à 1000°C et comprenant : - une couche utile semi-conductrice s'étendant selon un plan principal, - un substrat support, - une couche intermédiaire disposée entre la couche utile et le substrat support, et présentant une épaisseur, selon un axe normal au plan principal, inférieure à 20nm, - une interface de collage située dans la couche intermédiaire ou adjacente à celle-ci, - des atomes d'au moins une espèce gazeuse distribués selon un profil de concentration le long de l'axe normal au plan principal, avec un maximum de concentration supérieur à 1021/cm3, lesdits atomes restant piégés dans la couche intermédiaire et/ou dans une couche adjacente du substrat support d'épaisseur inférieure ou égale à 10nm et/ou dans une sous-couche adjacente de la couche utile d'épaisseur inférieure ou égale à 10nm, lorsque le substrat temporaire est soumis à une température inférieure à la température de démontage, et lesdits atomes étant destinés à diffuser à une interface de détachement lorsque le substrat temporaire est soumis à une température supérieure ou égale à la température de démontage. L'invention concerne également un procédé de fabrication dudit substrat temporaire. Enfin, l'invention concerne un procédé de transfert d'une couche utile sur un substrat receveur, à partir du substrat temporaire démontable, pour former une structure composite.

公开(公告)号：WO2020123851A2

公开(公告)日：2020-06-18

申请号：PCT/US2019/066054

申请日：2019-12-12

Applicant: TESORO SCIENTIFIC INC.

Inventor： HENLEY, Francois J.

IPC: H01L23/00 ,  H01L27/15 ,  H01L21/033 ,  H01L33/00 ,  H01L33/62 ,  H01L21/6835 ,  H01L22/14 ,  H01L2221/68318 ,  H01L2221/68322 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L25/0753 ,  H01L2933/0033 ,  H01L33/0095

Abstract: Embodiments relate to mass-transfer methods useful for fabricating products containing Light Emitting Diode (LED) structures. LED arrays are transferred from a source substrate to a target substrate by an in-process functional test Known-Good Die (KGD) driven mass-transfer of a plurality of LED devices in a high-speed flexible manner. Certain preferred embodiments using beam-addressed release (BAR) mass-transfer approaches are able to utilize a Known Good Die (KGD) data file of the source substrate in a manner that avoids additional steps, rework and yield losses.