中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

340 records (took 0.023 seconds)

    OPTOELECTRONIC DEVICE WITH INTEGRATED WAVELENGTH FILTERING
    52.
    发明申请
    OPTOELECTRONIC DEVICE WITH INTEGRATED WAVELENGTH FILTERING 审中-公开
    具有集成波长滤波的光电器件

    公开(公告)号：WO0201604A3

    公开(公告)日：2002-06-20

    申请号：PCT/FR0102046

    申请日：2001-06-29

    Applicant: CENTRE NAT RECH SCIENT ,  LYON ECOLE CENTRALE ,  VIKTOROVITCH PIERRE ,  GARRIGUES MICHEL ,  LECLERCQ JEAN-LOUIS

    Inventor： VIKTOROVITCH PIERRE ,  GARRIGUES MICHEL ,  LECLERCQ JEAN-LOUIS

    IPC: G02B5/28 ,  G02B5/26 ,  H01L31/0232 ,  H01L31/10 ,  H01L33/46 ,  H01S5/14 ,  H01S5/50

    CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/26 ,  H01L27/14625 ,  H01L31/02325 ,  H01L33/465

    Abstract: The invention concerns an optoelectronic device comprising filtering means (3) for transmitting a selected spectral part of light waves and for reflecting a matching spectral part, placed between means (4) for reflecting the selected spectral part towards the filtering means, and converting means (1) for transmitting to the filtering means the light waves to be filtered. The converting means are at a first distance (d1) from the filtering means, selected so that the waves they transmit and the reflected matching spectral part generate a first stationary wave whereof the associated electric field has a node in the conversion means (1), and at a second distance (d2) from the reflecting means selected so that the selected spectral part and the selected and reflected spectral part generate a second stationary wave whereof the associated electric field has an anti-node in the conversion means.

    Abstract translation: 本发明涉及一种光电子器件，包括用于传输所选光谱部分光波并用于反射匹配光谱部分的滤光装置（3），放置在用于将所选频谱部分反射到滤光装置的装置（4）和转换装置 1）用于向滤波装置传送要滤波的光波。 转换装置与滤波装置处于距离滤波装置的第一距离（d1），以便其发射的波和反射的匹配频谱部分产生第一静止波，其中相关的电场在转换装置（1）中具有节点， 并且与所选择的反射装置相距第二距离（d2），使得所选择的光谱部分和所选择和反射的光谱部分产生第二静止波，其中相关联的电场在转换装置中具有反节点。

    OPTOELECTRONIC DEVICE WITH INTEGRATED WAVELENGTH FILTERING
    53.
    发明申请
    OPTOELECTRONIC DEVICE WITH INTEGRATED WAVELENGTH FILTERING 审中-公开
    具有集成波长滤波的光电子器件

    公开(公告)号：WO02001604A2

    公开(公告)日：2002-01-03

    申请号：PCT/FR2001/002046

    申请日：2001-06-29

    IPC: G02B5/28 ,  G02B5/26 ,  H01L31/0232 ,  H01L31/10 ,  H01L33/46 ,  H01S5/14 ,  H01S5/50 ,  H01L

    CPC classification number: G01J3/02 ,  G01J3/0256 ,  G01J3/26 ,  H01L27/14625 ,  H01L31/02325 ,  H01L33/465

    Abstract: The invention concerns an optoelectronic device comprising filtering means (3) for transmitting a selected spectral part of light waves and for reflecting a matching spectral part, placed between means (4) for reflecting the selected spectral part towards the filtering means, and converting means (1) for transmitting to the filtering means the light waves to be filtered. The converting means are at a first distance (d1) from the filtering means, selected so that the waves they transmit and the reflected matching spectral part generate a first stationary wave whereof the associated electric field has a node in the conversion means (1), and at a second distance (d2) from the reflecting means selected so that the selected spectral part and the selected and reflected spectral part generate a second stationary wave whereof the associated electric field has an anti-node in the conversion means.

    Abstract translation: 一种光电子器件包括能够发射光波的选定光谱部分并且反射互补光谱部分的滤波装置（3），其放置在用于将所选择的光谱部分反射到滤波装置的装置（4）之间，以及 转换装置（1），用于向滤波装置传输要滤波的光波。 转换装置处于第一距离（d1）滤波装置，其被选择为使得它们传送给它们的波和互补反射光谱部分产生第一静止波，其相关电场在装置中具有节点。 转换（1），并且在第二距离（d2）选择反射装置，使得所选择的光谱部分和所选择的和反射的光谱部分产生第二静止波，其相关电场具有腹部 转换。

    MICROLENS FOR SURFACE MOUNT PRODUCTS
    55.
    发明申请
    MICROLENS FOR SURFACE MOUNT PRODUCTS 审中-公开
    用于表面安装产品的MICROLENS

    公开(公告)号：WO00076002A1

    公开(公告)日：2000-12-14

    申请号：PCT/US2000/013086

    申请日：2000-05-11

    IPC: B29D11/00 ,  B29K101/10 ,  G02B3/00 ,  G02B6/122 ,  G02B6/124 ,  G02B6/42 ,  G03F7/00 ,  H01L27/14 ,  H01L31/0232 ,  G02B6/12

    CPC classification number: G02B3/0018 ,  G02B3/0056 ,  G02B6/1221 ,  G02B6/1245 ,  G02B6/4204 ,  G03F7/0005 ,  H01L31/02325 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

    Abstract: A photosensitive device (46) with a microlens array (44) may be packaged for surface mount packaging (48) and subsequent mass reflow processing without significantly degrading the optical performance of the microlens. The microlens may be formed using a series of heat steps of increasing time and temperature. In addition, the microlens may be bleached to prevent degradation of its optical transmissivity at temperatures normally associated with surface mount techniques.

    Abstract translation: 具有微透镜阵列（44）的光敏器件（46）可以被封装用于表面贴装封装（48）和随后的质量回流处理，而不会显着降低微透镜的光学性能。 微透镜可以使用一系列增加时间和温度的热步骤形成。 此外，微透镜可以被漂白以防止在通常与表面贴装技术相关的温度下其光透射率的降低。

    REFLECTING STRUCTURES FOR PHOTOSENSITIVE DEVICES
    56.
    发明申请
    REFLECTING STRUCTURES FOR PHOTOSENSITIVE DEVICES 审中-公开
    反射感光装置的结构

    公开(公告)号：WO00031805A1

    公开(公告)日：2000-06-02

    申请号：PCT/US1999/021368

    申请日：1999-09-17

    IPC: G02B5/08 ,  G02B17/08 ,  H01L27/14 ,  H01L27/146 ,  H01L31/0232

    CPC classification number: H01L27/14627 ,  H01L31/02325

    Abstract: A microcollector (10) for photosensitive devices such as imaging arrays for digital cameras, scanners and other devices, may be formed on a semiconductor structure (14) adjacent to a photosensitive element (20). The collector (10) may include wedge-shaped reflectors (12) arranged about the photosensitive element (20) so as to reflect incident light towards the photosensitive element (20). The collector (10) may be used in conjunction with a refractive/diffractive microlens (24) to further focus light onto the photosensitive element. As a result, the fill factor of the photosensitive device may be improved, and the signal to noise ratio may also be enhanced.

    Abstract translation: 可以在与感光元件（20）相邻的半导体结构（14）上形成用于诸如数码相机，扫描器和其它设备的成像阵列的光敏器件的微型收集器（10）。 收集器（10）可以包括布置在感光元件（20）周围的楔形反射器（12），以将入射光反射到光敏元件（20）。 收集器（10）可以与折射/衍射微透镜（24）结合使用，以进一步将光聚焦到感光元件上。 结果，可以提高感光装置的填充系数，并且还可以提高信噪比。

    INFRARED RADIATION DETECTOR HAVING A REDUCED ACTIVE AREA
    57.
    发明申请
    INFRARED RADIATION DETECTOR HAVING A REDUCED ACTIVE AREA 审中-公开
    具有减少活动区域的红外辐射探测器

    公开(公告)号：WO1997021250A1

    公开(公告)日：1997-06-12

    申请号：PCT/US1996019261

    申请日：1996-12-04

    Applicant: LOCKHEED-MARTIN IR IMAGING SYSTEMS, INC.

    Inventor： LOCKHEED-MARTIN IR IMAGING SYSTEMS, INC. ,  BLACKWELL, Richard ,  BUTLER, Neal, R. ,  MROCZKOWSKI, Jacek

    IPC: H01L31/0232

    CPC classification number: G01J5/02 ,  G01J5/023 ,  G01J5/024 ,  G01J5/026 ,  G01J5/08 ,  G01J5/0806 ,  G01J5/0815 ,  G01J5/085 ,  G01J5/0859 ,  G01J5/20 ,  G01J2005/0077 ,  H01L31/02325 ,  H01L31/035281 ,  H04N5/33 ,  Y02E10/50

    Abstract: A microbridge detector is with an active area that is smaller than a pixel collection area of the microbridge detector. The microbridge detector includes a semiconductor substrate on a first level and a microbridge level disposed above the semiconductor substrate. The microbridge level includes the active area having the pixel collection area greater than a square area of the active area of the microbridge detector. In addition, downwardly extending leg portions are a continuation of the microbridge level and support the microbridge level above the semiconductor substrate so that a thermal isolation gap exists between the microbridge level and the semiconductor substrate. Further, electrically conductive paths are included within the downwardly extending leg portions and connect the active area in the microbridge level to the semiconductor substrate. With this apparatus, the microbridge detector is provided with a pixel collecting area that is larger than a fill factor of the microbridge detector and thus is provided with an enhanced optical collection sensitivity. In addition, with this apparatus, the microbridge detector device can be fabricated with a smaller active area without having to build a smaller microbridge level and thus is not limited by processing techniques.

    Abstract translation: 微桥检测器具有小于微桥检测器的像素收集区域的有源区域。 微桥检测器包括在第一级上的半导体衬底和设置在半导体衬底之上的微桥级。 微桥级别包括具有大于微桥检测器的有效区域的正方形面积的像素收集区域的有源区域。 此外，向下延伸的支脚部分是微桥级别的延续并且支撑半导体衬底上方的微桥级别，使得在微桥级和半导体衬底之间存在热隔离间隙。 此外，导电路径包括在向下延伸的腿部内，并将微桥级中的有源区域连接到半导体衬底。 利用该装置，微桥检测器设置有比微桥检测器的填充因子大的像素收集区域，因此具有增强的光学收集灵敏度。 此外，利用该装置，可以制造具有更小的有源面积的微桥检测器装置，而不必构建更小的微桥级，因此不受处理技术的限制。

    ARRANGEMENT FOR MOUNTING A LENS TO A SOLID STATE IMAGE SENSOR
    58.
    发明申请
    ARRANGEMENT FOR MOUNTING A LENS TO A SOLID STATE IMAGE SENSOR 审中-公开
    将镜头安装到固态图像传感器的布置

    公开(公告)号：WO1993022787A1

    公开(公告)日：1993-11-11

    申请号：PCT/US1992003495

    申请日：1992-04-28

    Applicant: LSI LOGIC CORPORATION ,  APPLE COMPUTER, INC. ,  LYNCH, Brian ,  GAINEY, Trevor, C. ,  O'REGAN, Eoin ,  COBURN, Paul ,  NASH, Robert ,  O'DONNEL, Pat

    Inventor： LSI LOGIC CORPORATION ,  APPLE COMPUTER, INC.

    IPC: H01J03/14

    CPC classification number: G02B7/02 ,  H01L31/0203 ,  H01L31/02325

    Abstract: A resilient, fixed-spacing, fixed-orientation mounting of a lens (450) with respect to a semiconductor die (430) having an array of photosensitive elements is established by forming ''legs'' on the lens and corresponding ''landing pads'' on the die, and further by providing locating pins (463, 469) passing through a flexible substrate (434) mounting the die and into a PCB (480) supporting the substrate-mounted die. In one embodiment, the locating pins are discrete elements. In another embodiment, the pins are formed integrally with the legs of the lens. In either case, the landing pads are preferably formed on the die as ''bumps'' formed in a tape-automated bonding (TAB) process.

    Abstract translation: 通过在透镜和对应的“着陆垫上形成”腿“来建立透镜（450）相对于具有感光元件阵列的半导体管芯（430）的弹性固定间隔固定方位安装 并且进一步通过提供定位销（463,469），所述定位销（463,469）穿过安装所述管芯的柔性基板（434）并进入支撑所述基板安装管芯的PCB（480）。 在一个实施例中，定位销是离散元件。 在另一个实施例中，销与镜片的腿一体形成。 在任一种情况下，优选地，在模具中形成着陆焊盘作为在带自动焊接（TAB）工艺中形成的“凸起”。

    LIGHT DETECTOR
    59.
    发明申请
    LIGHT DETECTOR 审中-公开
    光探测器

    公开(公告)号：WO1987004861A1

    公开(公告)日：1987-08-13

    申请号：PCT/GB1987000060

    申请日：1987-01-29

    Applicant: PA CONSULTING SERVICES LIMITED ,  SAWYERS, Craig

    Inventor： PA CONSULTING SERVICES LIMITED

    IPC: H01L31/10

    CPC classification number: H01L31/108 ,  H01L31/02161 ,  H01L31/02325 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

    Abstract: A photodetector which comprises a surface-profiled Schottky barrier detector (22) having a peak response which is a function of wavelength and of angle of incidence, and a blazed diffraction grating (20) positioned in front of the barrier detector and having its dispersion selected so that its first order of diffracted light is incident on the barrier detector with an angle of incidence (A1, A2) which so varies as substantially to compensate for the peak response function of the barrier detector, thereby to produce a peak response from the barrier detector throughout a range of wavelengths. In this way, the bandwidth of the photodector can be controlled.

    ELECTROSTATIC DISCHARGE GUARD STRUCTURE
    60.
    发明申请
    ELECTROSTATIC DISCHARGE GUARD STRUCTURE 审中-公开
    静电放电保护结构

    公开(公告)号：WO2017190479A1

    公开(公告)日：2017-11-09

    申请号：PCT/CN2016/103595

    申请日：2016-10-27

    Applicant: HUAWEI TECHNOLOGIES CO., LTD.

    Inventor： CELO, Dritan ,  GOODWILL, Dominic John ,  BERNIER, Eric

    IPC: H01L31/02 ,  H01L31/075

    CPC classification number: H01L27/1443 ,  G02B6/00 ,  G02B6/122 ,  G02B2006/121 ,  G02B2006/12123 ,  G02B2006/12145 ,  H01L27/0248 ,  H01L27/14643 ,  H01L27/14647 ,  H01L27/14652 ,  H01L31/02019 ,  H01L31/02325 ,  H01L31/105

    Abstract: An electrostatic discharge guard structure for photonic platform based photodiode systems is provided. In particular this application provides a photodiode assembly comprising: a photodiode (such as a Si or SiGe photodiode), a waveguide (212) (such as a silicon waveguide); and a guard structure, wherein the guard structure comprises a diode, extends about all or substantially all of the periphery of the Si or SiGe photodiode and allows propagation of light from the silicon waveguide (212) into the Si or SiGe photodiode.

    Abstract translation: 提供了用于基于光子平台的光电二极管系统的静电放电保护结构。 特别地，本申请提供了一种光电二极管组件，其包括：光电二极管（诸如Si或SiGe光电二极管），波导（212）（诸如硅波导）; 以及保护结构，其中保护结构包括二极管，围绕Si或SiGe光电二极管的全部或基本上全部外围延伸，并且允许来自硅波导（212）的光传播到Si或SiGe光电二极管中。

Patent Agency Ranking