公开(公告)号：WO2011094132A2

公开(公告)日：2011-08-04

申请号：PCT/US2011022075

申请日：2011-01-21

Applicant: LAM RES CORP ,  YASSERI AMIR A ,  ZHU JI ,  YUN SEOKMIN ,  MUI DAVID S L ,  MIKHAYLICHENKO KATRINA

Inventor： YASSERI AMIR A ,  ZHU JI ,  YUN SEOKMIN ,  MUI DAVID S L ,  MIKHAYLICHENKO KATRINA

IPC: H01L21/302

CPC classification number: H01L21/02057

Abstract: A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes.. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.

Abstract translation: 提供了一种用于处理高纵横比纳米结构表面的方法，以帮助在制造半导体器件的一些严格处理过程中保护精细的纳米结构。 处理含有高纵横比纳米结构的晶片以使纳米结构的表面更具疏水性。 处理可以包括施加化学改变纳米结构表面的底漆，以防止它们在随后的湿清洁过程中被损坏。然后可以进一步处理晶片，例如湿法清洁工艺，随后进行干燥处理。 纳米结构的增加的疏水性有助于减少或防止纳米​​结构的崩溃。

公开(公告)号：WO2011084381A2

公开(公告)日：2011-07-14

申请号：PCT/US2010/060107

申请日：2010-12-13

Applicant: APPLIED MATERIALS, INC. ,  SCHMITT, Francimar, C. ,  YUAN, Zheng ,  ZHENG, Yi ,  YANG, Fan ,  LI, Lipan

Inventor： SCHMITT, Francimar, C. ,  YUAN, Zheng ,  ZHENG, Yi ,  YANG, Fan ,  LI, Lipan

IPC: H01L31/042 ,  H01L31/18 ,  H01L21/302

CPC classification number: H01L31/03921 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1816 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

Abstract: Embodiments of the present invention generally provide a method for forming a plurality of thin film single or multi-junction solar cell in a substrate processing chamber. In one embodiment, a method for processing a plurality of thin film solar cell substrates includes depositing sequentially a first undoped layer and a first doped layer over a surface of a first substrate and a chamber component in a single processing chamber, removing the substrate having the doped and undoped layers from the processing chamber, removing the second doped layer deposited on the chamber component to expose underlying first undoped layer which serves as a seasoning layer for a second substrate to be processed in the processing chamber, and depositing sequentially a second undoped layer and a second doped layer on the second substrate in the processing chamber. In one example, the first undoped layer is amorphous silicon or microcrystalline silicon. A full cleaning process may be performed at desired intervals to expose the surfaces of the chamber component before a regular seasoning process and the subsequent depositions are proceeded in the processing chamber.

Abstract translation: 本发明的实施方案通常提供在基板处理室中形成多个薄膜单结或多结太阳能电池的方法。 在一个实施例中，一种用于处理多个薄膜太阳能电池基板的方法包括在单个处理室中顺序地在第一基板和室部件的表面上沉积第一未掺杂层和第一掺杂层，去除具有 去除来自处理室的掺杂和未掺杂的层，去除沉积在室组件上的第二掺杂层，以暴露下面的第一未掺杂层，其用作待处理室中待处理的第二衬底的调味层，以及顺序地沉积第二未掺杂层 以及处理室中的第二衬底上的第二掺杂层。 在一个示例中，第一未掺杂层是非晶硅或微晶硅。 可以以期望的间隔进行全部清洁处理，以在常规调味过程之前暴露室部件的表面，并且随后在处理室中进行沉积。

公开(公告)号：WO2011083719A1

公开(公告)日：2011-07-14

申请号：PCT/JP2010/073592

申请日：2010-12-27

Applicant: 株式会社SUMCO ,  山下 崇史 ,  モハマッド.ビー.シャバニー

Inventor： 山下　崇史 ,  モハマッド．ビー．シャバニー

IPC: G01N1/28 ,  G01N1/32 ,  H01L21/302

CPC classification number: G01N1/32 ,  H01L21/3065

Abstract: 本発明の一態様は、シリコンウェーハ表面をエッチングガスと接触させることにより、該シリコンウェーハ表層部をエッチングするシリコンウェーハ表層部のエッチング方法に関する。一態様では、前記エッチングガスとして、弗化水素ガス、硝酸ガス、および窒素酸化物ガスの混合ガスを使用する。

Abstract translation: 公开了一种用于蚀刻硅晶片的表面层部分的方法，其包括使硅晶片的表面与蚀刻气体接触以蚀刻硅晶片的表面层部分。 在该方法中，可以使用氟化氢气体，硝酸气体和氮氧化物气体的混合气体作为蚀刻气体。

公开(公告)号：WO2011073840A2

公开(公告)日：2011-06-23

申请号：PCT/IB2010/055550

申请日：2010-12-02

Applicant: LAM RESEARCH AG ,  LAM RESEARCH CORPORATION ,  FRANK, Dieter ,  PUGGL, Michael

Inventor： FRANK, Dieter ,  PUGGL, Michael

IPC: H01L21/302

CPC classification number: H01L21/67051 ,  H01L21/6708 ,  H01L21/6715 ,  H01L21/67253 ,  H01L21/68728 ,  H01L21/68735

Abstract: A spin chuck in an apparatus for single wafer wet processing has structures at its periphery that, in combination with a supported wafer, form a series of annular nozzles that direct flowing gas from a chuck-facing surface of the wafer, around the edge of the wafer, and exhaust the gas away from the non-chuck- facing surface of the wafer, thereby preventing treatment fluid applied to the non-chuck- facing surface from contacting the edge region of the wafer. Retaining pins with enlarged heads engage the wafer edge and prevent it from being displaced upwardly when a high flow rate of gas is utilized.

Abstract translation: 在用于单晶片湿法处理的装置中的旋转卡盘在其外围具有结构，该结构与被支撑的晶片结合形成一系列环形喷嘴，该一系列环形喷嘴引导流动气体从面向卡盘的表面 该晶片围绕晶片的边缘并且将气体从晶片的非面向卡盘的表面排出，从而防止施加到非面向卡盘的表面的处理流体接触晶片的边缘区域。 具有扩大头部的挡销与晶片边缘接合并防止在利用高流率气体时向上移动晶片边缘。

公开(公告)号：WO2011072042A3

公开(公告)日：2011-06-16

申请号：PCT/US2010/059517

申请日：2010-12-08

Applicant: NOVELLUS SYSTEMS, INC. ,  CHEUNG, David ,  LI, Ted ,  GUHA, Anirban ,  OSTROWSKI, Kirk

Inventor： CHEUNG, David ,  LI, Ted ,  GUHA, Anirban ,  OSTROWSKI, Kirk

IPC: H01L21/302

Abstract: Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160 o Cor less, e.g., less than about 90 o C.

公开(公告)号：WO2011070398A1

公开(公告)日：2011-06-16

申请号：PCT/IB2009/055667

申请日：2009-12-10

Applicant: UNIVERSIDADE DE AVEIRO ,  CARDOSO DOS SANTOS LOURENÇO, Armando António ,  YANN RAUWEL, Erwan

Inventor： CARDOSO DOS SANTOS LOURENÇO, Armando António ,  YANN RAUWEL, Erwan

IPC: H01L21/28 ,  H01L21/302 ,  H01L29/51 ,  H01L21/22

CPC classification number: H01L21/28194 ,  H01L21/02181 ,  H01L21/02197 ,  H01L21/02304 ,  H01L21/22 ,  H01L21/28 ,  H01L29/517

Abstract: The present invention provides a method for the production of microelectronic devices that uses a thin metallic Mg layer as oxygen diffusion barrier. This method prevents the oxygen diffusion into the substrate during the growth process of oxide thin films and/or prevents the oxygen escape from the substrate into the processing environment allowing thus a complete control of the oxygen stoichiometry and/or oxidation during the production process of the microelectronic device. If necessary and/or convenient the Mg thin layer can be diffused into the adjacent layers by thermal treatment.

Abstract translation: 本发明提供一种使用薄金属Mg层作为氧扩散阻挡层的微电子器件的制造方法。 该方法防止在氧化物薄膜的生长过程中氧扩散到衬底中和/或防止氧气从衬底逸出到处理环境中，从而在生产过程中完全控制氧化学计量和/或氧化 微电子器件。 如果需要和/或方便，Mg薄层可以通过热处理扩散到相邻层中。

公开(公告)号：WO2009014587A8

公开(公告)日：2011-04-21

申请号：PCT/US2008007609

申请日：2008-06-18

Applicant: ITZKOWITZ HERMAN ,  SOLID STATE EQUIPTMENT CORP

Inventor： ITZKOWITZ HERMAN

IPC: H01L21/302

CPC classification number: H01L21/02021 ,  H01L21/6708 ,  H01L21/68735

Abstract: An apparatus and method used to selectively etch materials from the edge and bevel areas of a silicon wafer are provided. In one configuration, a bevel etch spin chuck, for use in a device for removing unwanted material from an edge and bevel area of a wafer, includes a fluid channel, a separation barrier, and a gas channel that are substantially circular and concentric. A fluid, such as an etching solution, is provided to the fluid channel and contacts one or more areas at the edge and bevel area of the wafer. A stream of continuously flowing gas, such as nitrogen, is provided to the gas channel and purges an active side of the wafer.

Abstract translation: 提供了用于从硅晶片的边缘和斜面区域选择性地蚀刻材料的设备和方法。 在一种构造中，用于从晶片的边缘和斜面区域去除不想要的材料的装置中的斜面蚀刻旋转卡盘包括基本上圆形和同心的流体通道，分隔壁和气体通道。 诸如蚀刻溶液的流体被提供到流体通道并且接触晶片的边缘和斜面区域处的一个或多个区域。 向气体通道提供诸如氮气的连续流动的气体流，并且清除晶片的活性侧。

公开(公告)号：WO2011040701A2

公开(公告)日：2011-04-07

申请号：PCT/KR2010/005194

申请日：2010-08-09

Applicant: 방선정 ,  방병호

Inventor： 방선정 ,  방병호

IPC: H01L21/302

CPC classification number: B08B1/04

Abstract: 본 발명은 반도체 CMP공정(웨이퍼 세정공정)에 사용되는 PVA 브러쉬 롤에 관한 것으로서, 회전가능한 코어와; 상기 코어의 외측면에 설치되고 그 표면에는 다수의 돌기들을 갖는 브러쉬와; 상기 브러쉬에 인서트되어 브러쉬를 지지하는 한편 그 일측이 브러쉬에서 돌출되어 코어에 결합되는 지지부재;를 포함하여 구성된 것을 특징으로 하여, 브러쉬의 뒤틀림 또는 쏠림 현상을 방지할 수 있고, 브러쉬를 코어에 간편하게 끼워 견고하게 결합시킬 수 있다.

Abstract translation: 本发明涉及一种用于制造半导体的CMP工艺（晶片清洗工艺）的PVA刷辊，其中所述PVA刷辊包括：可旋转芯; 布置在所述芯的外表面上并具有多个突起的表面的刷子; 以及支撑构件，其被插入到刷子中以支撑刷子，并且其一侧从刷子突出并联接到芯部，从而防止刷子扭曲或倾斜到一侧，并且装配和联接 刷到核心以方便和坚定的方式。

公开(公告)号：WO2011031556A2

公开(公告)日：2011-03-17

申请号：PCT/US2010/047009

申请日：2010-08-27

Applicant: APPLIED MATERIALS, INC. ,  HANAWA, Hiroji ,  MAUNG, Kyawwin Jason ,  CHUNG, Hua

Inventor： HANAWA, Hiroji ,  MAUNG, Kyawwin Jason ,  CHUNG, Hua

IPC: H01L21/205 ,  H01L21/302

CPC classification number: C23C16/4405 ,  C23C16/4404 ,  C23C16/45574 ,  H01L21/67115

Abstract: During a deposition process, material may deposit not only on the substrate, but also on other chamber components. In a MOCVD chamber, one of those components is the gas distribution showerhead. The showerhead may be cleaned by bombarding the showerhead with radicals generated by a plasma that includes an inert gas and chlorine. In order to generate the plasma, the showerhead may be negatively biased or floating relative to the substrate support. The showerhead may comprise stainless steel and be coated with a ceramic coating.

Abstract translation: 在沉积过程中，材料不仅可以沉积在基底上，而且沉积在其它腔室部件上。 在MOCVD室中，其中一个部件是气体分配喷头。 可以通过用包括惰性气体和氯的等离子体产生的自由基轰击喷头来清洁喷头。 为了产生等离子体，喷头可以相对于基板支撑物被负偏置或浮动。 喷头可以包括不锈钢并涂覆有陶瓷涂层。

公开(公告)号：WO2010144439A3

公开(公告)日：2011-03-03

申请号：PCT/US2010037759

申请日：2010-06-08

Applicant: ADVANCED TECH MATERIALS ,  LURCOTT STEVEN M ,  HUGHES JOHN E Q ,  WRSCHKA PETER ,  BAUM THOMAS H ,  WARE DONALD D ,  ZOU PENG

Inventor： LURCOTT STEVEN M ,  HUGHES JOHN E Q ,  WRSCHKA PETER ,  BAUM THOMAS H ,  WARE DONALD D ,  ZOU PENG

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/20 ,  H01L21/302 ,  H01L21/304

CPC classification number: B01F15/0203 ,  B01F3/0861 ,  B01F15/0258 ,  B01F2003/0896 ,  B65B3/14 ,  B67D7/025 ,  B67D7/0261 ,  B67D7/0283 ,  B67D7/741

Abstract: Systems and methods for delivering fluid-containing feed materials to process equipment are disclosed. A liner-based pressure dispensing vessel is subjected to filling by application of vacuum between the liner and overpack. Multiple feed material flow controllers of different calibrated flow ranges may be selectively operated in parallel for a single feed material. Feed material blending and testing for scale-up may be performed with feed materials supplied by multiple liner-based pressure dispensing containers. A gravimetric system may be used to determine concentration of at least one component of a multi-component solution or mixture.

Abstract translation: 公开了用于将含流体的进料传送到加工设备的系统和方法。 基于衬管的压力分配容器通过在衬套和外包装之间施加真空而进行填充。 不同校准流量范围的多个进料流量控制器可以针对单个进料进行选择性并行操作。 用于放大的进料混合和测试可以通过由多个基于衬管的压力分配容器供应的进料进行。 重量分析系统可用于测定多组分溶液或混合物中至少一种组分的浓度。