公开(公告)号：WO2012177804A3

公开(公告)日：2012-12-27

申请号：PCT/US2012/043404

申请日：2012-06-20

Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC ,  GESSERT, Timothy A. ,  NOUFI, Rommel ,  DHERE, Ramesh G. ,  ALBIN, David S. ,  BARNES, Teresa ,  BURST, James ,  DUENOW, Joel N. ,  REESE, Matthew

Inventor： GESSERT, Timothy A. ,  NOUFI, Rommel ,  DHERE, Ramesh G. ,  ALBIN, David S. ,  BARNES, Teresa ,  BURST, James ,  DUENOW, Joel N. ,  REESE, Matthew

IPC: H01L29/22 ,  C01B19/00

Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

公开(公告)号：WO1996025768A1

公开(公告)日：1996-08-22

申请号：PCT/US1995001923

申请日：1995-02-16

Applicant: MIDWEST RESEARCH INSTITUTE ,  NOUFI, Rommel ,  GABOR, Andrew, M. ,  TUTTLE, John, R. ,  TENNANT, Andrew, L. ,  CONTRERAS, Miguel, A. ,  ALBIN, David, S. ,  CARAPELLA, Jeffrey, J.

Inventor： MIDWEST RESEARCH INSTITUTE

IPC: H01L31/0296

CPC classification number: H01L31/0322 ,  Y02E10/541 ,  Y02P70/521 ,  Y10S438/93

Abstract: A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S)2 comprises depositing a first layer (16) of (In,Ga)x(Se,S)y followed by depositing just enough Cu+(Se,S) or Cux(Se,S) to produce the desired slightly Cu-poor material layer (18). In variation, most, but not all, (about 90 % to 99 %) of the (In,Ga)x(Se,S)y layer (20) is deposited first, followed by deposition of all the Cu+(Se,S) or Cux(Se,S) layer (22) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 % to 10 %) of the (In,Ga)x(Se,S)y layer (24) to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 % to 10 %) of the (In,Ga)x(Se,S)y is first deposited as a seed layer (26), followed by deposition of all of the Cu+(Se,S) or Cux(Se,S) to make a very Cu-rich mixture layer (28), and then followed deposition of the remainder of the (In,Ga)x(Se,S)y layer (30) to go slightly Cu-poor in the final Cu(In,Ga)(Se,S)2 thin film.

Abstract translation: 用于制造Cu（In，Ga）（Se，S）2的略微Cu不良薄膜的方法包括沉积（In，Ga）x（Se，S）y的第一层（16），然后沉积刚好 Cu +（Se，S）或Cux（Se，S）以产生所需的稍微不良铜的材料层（18）。 在变化中，首先沉积（In，Ga）x（Se，S）y层（20）的大部分但不是全部（约90％至99％），然后沉积所有Cu +（Se，S ）或Cux（Se，S）层（22）接近化学计量，可能甚至优选略微富Cu，然后依次沉积（In，Ga）的余量（约1％至10％） ）x（Se，S）y层（24）以稍微不合铜的组成结束。 在另一变型中，首先将（In，Ga）x（Se，S）y的一小部分（约1％至10％）沉积为籽晶层（26），然后沉积所有Cu + Se，S）或Cux（Se，S），以形成非常富Cu的混合层（28），然后将剩余的（In，Ga）x（Se，S）y层（30）沉积到 在最终的Cu（In，Ga）（Se，S）2薄膜中略微Cu-poor。

公开(公告)号：WO2012177804A2

公开(公告)日：2012-12-27

申请号：PCT/US2012043404

申请日：2012-06-20

Applicant: ALLIANCE SUSTAINABLE ENERGY ,  GESSERT TIMOTHY A ,  NOUFI ROMMEL ,  DHERE RAMESH G ,  ALBIN DAVID S ,  BARNES TERESA ,  BURST JAMES ,  DUENOW JOEL N ,  REESE MATTHEW

Inventor： GESSERT TIMOTHY A ,  NOUFI ROMMEL ,  DHERE RAMESH G ,  ALBIN DAVID S ,  BARNES TERESA ,  BURST JAMES ,  DUENOW JOEL N ,  REESE MATTHEW

IPC: H01L21/10

CPC classification number: H01L31/1828 ,  H01L21/0237 ,  H01L21/02474 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02664 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543

Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

Abstract translation: 提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。 特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。