THIN FILM PHOTOVOLTAIC DEVICES WITH A MINIMALLY CONDUCTIVE BUFFER LAYER
    3.
    发明申请
    THIN FILM PHOTOVOLTAIC DEVICES WITH A MINIMALLY CONDUCTIVE BUFFER LAYER 审中-公开
    具有最小导电缓冲层的薄膜光伏器件

    公开(公告)号:WO2013119550A1

    公开(公告)日:2013-08-15

    申请号:PCT/US2013/024743

    申请日:2013-02-05

    Abstract: A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

    Abstract translation: 提供了具有可调谐,最小导电缓冲(128)层的薄膜光伏器件(100)。 光伏器件(100)可以包括位于前触点叠层(120)和背触点(150)之间的后触点(150),透明前触点叠层(120)和吸收体(140)。 前接触堆叠(120)可以包括邻近吸收层(140)的低电阻透明导电氧化物(TCO)层(124)和缓冲层(128)。 光伏器件(100)还可以包括在缓冲层(128)和吸收器(140)之间的窗口层(130)。 在一些情况下,缓冲层(128)是最小导电的,其电阻率是可调谐的,并且缓冲层(128)可以由主体氧化物和高电容率氧化物形成为合金。 可以进一步选择高介电常数氧化物以具有大于主体氧化物的带隙。

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