公开(公告)号：WO2013119550A1

公开(公告)日：2013-08-15

申请号：PCT/US2013/024743

申请日：2013-02-05

Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC ,  BARNES, Teresa M. ,  BURST, James

Inventor： BARNES, Teresa M. ,  BURST, James

IPC: H01L31/00

CPC classification number: H01L31/02167 ,  H01L31/022466 ,  H01L31/073 ,  H01L31/0749 ,  H01L31/1828 ,  H01L31/1836 ,  H01L31/1884 ,  Y02E10/541 ,  Y02E10/543 ,  Y02P70/521

Abstract: A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back contact (150), a transparent front contact stack (120), and an absorber (140) positioned between the front contact stack (120) and the back contact (150). The front contact stack (120) may include a low resistivity transparent conductive oxide (TCO) layer (124) and a buffer layer (128) that is proximate to the absorber layer (140). The photovoltaic device (100) may also include a window layer (130) between the buffer layer (128) and the absorber (140). In some cases, the buffer layer (128) is minimally conductive, with its resistivity being tunable, and the buffer layer (128) may be formed as an alloy from a host oxide and a high-permittivity oxide. The high-permittivity oxide may further be chosen to have a bandgap greater than the host oxide.

Abstract translation: 提供了具有可调谐，最小导电缓冲（128）层的薄膜光伏器件（100）。 光伏器件（100）可以包括位于前触点叠层（120）和背触点（150）之间的后触点（150），透明前触点叠层（120）和吸收体（140）。 前接触堆叠（120）可以包括邻近吸收层（140）的低电阻透明导电氧化物（TCO）层（124）和缓冲层（128）。 光伏器件（100）还可以包括在缓冲层（128）和吸收器（140）之间的窗口层（130）。 在一些情况下，缓冲层（128）是最小导电的，其电阻率是可调谐的，并且缓冲层（128）可以由主体氧化物和高电容率氧化物形成为合金。 可以进一步选择高介电常数氧化物以具有大于主体氧化物的带隙。

公开(公告)号：WO2012177804A2

公开(公告)日：2012-12-27

申请号：PCT/US2012043404

申请日：2012-06-20

Applicant: ALLIANCE SUSTAINABLE ENERGY ,  GESSERT TIMOTHY A ,  NOUFI ROMMEL ,  DHERE RAMESH G ,  ALBIN DAVID S ,  BARNES TERESA ,  BURST JAMES ,  DUENOW JOEL N ,  REESE MATTHEW

Inventor： GESSERT TIMOTHY A ,  NOUFI ROMMEL ,  DHERE RAMESH G ,  ALBIN DAVID S ,  BARNES TERESA ,  BURST JAMES ,  DUENOW JOEL N ,  REESE MATTHEW

IPC: H01L21/10

CPC classification number: H01L31/1828 ,  H01L21/0237 ,  H01L21/02474 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02664 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543

Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

Abstract translation: 提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。 特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。

公开(公告)号：WO2009116990A1

公开(公告)日：2009-09-24

申请号：PCT/US2008/057244

申请日：2008-03-17

Applicant: MIDWEST RESEARCH INSTITUTE ,  GESSERT, Timothy A. ,  DUENOW, Joel N. ,  BARNES, Teresa ,  COUTTS, Timothy J.

Inventor： GESSERT, Timothy A. ,  DUENOW, Joel N. ,  BARNES, Teresa ,  COUTTS, Timothy J.

IPC: H01B1/08 ,  H01B1/16

CPC classification number: H01B1/08 ,  H01B1/02

Abstract: A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm 2 /V-sec while simultaneously maintaining a high carrier density of ~4.4ex10 20 cm -3 .

Abstract translation: 一种透明导电氧化物（TCO）膜，包括：TCO层和选自钒，钼，钽，铌，锑，钛，锆和铪的元素的掺杂剂，其中元素是n型掺杂剂; 并且其中透明导电氧化物的特征在于约42cm 2 / V-sec的电子迁移率改善，同时保持约4.4×10 20 cm -3的高载流子密度。

公开(公告)号：WO2012177804A3

公开(公告)日：2012-12-27

申请号：PCT/US2012/043404

申请日：2012-06-20

Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC ,  GESSERT, Timothy A. ,  NOUFI, Rommel ,  DHERE, Ramesh G. ,  ALBIN, David S. ,  BARNES, Teresa ,  BURST, James ,  DUENOW, Joel N. ,  REESE, Matthew

Inventor： GESSERT, Timothy A. ,  NOUFI, Rommel ,  DHERE, Ramesh G. ,  ALBIN, David S. ,  BARNES, Teresa ,  BURST, James ,  DUENOW, Joel N. ,  REESE, Matthew

IPC: H01L29/22 ,  C01B19/00

Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

公开(公告)号：WO2011035307A1

公开(公告)日：2011-03-24

申请号：PCT/US2010/049662

申请日：2010-09-21

Applicant: MATHESON TRI-GAS, INC. ,  ALLIANCE FOR SUSTAINABLE ENERGY ,  GESSERT, Tim ,  LI, Xiaonan ,  BARNES, Teresa, M. ,  TORRES, JR., Robert ,  WYSE, Carrie, L.

Inventor： GESSERT, Tim ,  LI, Xiaonan ,  BARNES, Teresa, M. ,  TORRES, JR., Robert ,  WYSE, Carrie, L.

IPC: C01G23/053 ,  C01G23/00 ,  C09C1/36

CPC classification number: C23C16/45523 ,  C23C16/407 ,  C23C16/50

Abstract: Methods of forming a conductive fluorine-doped metal oxide layer on a substrate by chemical vapor deposition are described. The methods may include heating the substrate in a processing chamber, and introducing a metal-containing precursor and a fluorine-containing precursor to the processing chamber. The methods may also include adding an oxygen-containing precursor to the processing chamber. The precursors are reacted to deposit the fluorine-doped metal oxide layer on the substrate. Methods may also include forming the conductive fluorine-doped metal oxide layer by plasma-assisted chemical vapor deposition. These methods may include providing the substrate in a processing chamber, and introducing a metal-containing precursor, and a fluorine-containing precursor to the processing chamber. A plasma may be formed that includes species from the metal-containing precursor and the fluorine-containing precursor. The species may react to deposit the fluorine-doped metal oxide layer on the substrate.

Abstract translation: 描述了通过化学气相沉积在衬底上形成导电性氟掺杂金属氧化物层的方法。 所述方法可以包括在处理室中加热衬底，并将含金属的前体和含氟前体引入到处理室中。 所述方法还可以包括向处理室中加入含氧前体。 使前体反应以在衬底上沉积氟掺杂的金属氧化物层。 方法还可以包括通过等离子体辅助化学气相沉积形成导电性氟掺杂金属氧化物层。 这些方法可以包括在处理室中提供衬底，并将含金属的前体和含氟前体引入处理室。 可以形成包括来自含金属的前体和含氟前体的物质的等离子体。 该物质可以反应以在衬底上沉积氟掺杂的金属氧化物层。