公开(公告)号：WO2012177804A2

公开(公告)日：2012-12-27

申请号：PCT/US2012043404

申请日：2012-06-20

Applicant: ALLIANCE SUSTAINABLE ENERGY ,  GESSERT TIMOTHY A ,  NOUFI ROMMEL ,  DHERE RAMESH G ,  ALBIN DAVID S ,  BARNES TERESA ,  BURST JAMES ,  DUENOW JOEL N ,  REESE MATTHEW

Inventor： GESSERT TIMOTHY A ,  NOUFI ROMMEL ,  DHERE RAMESH G ,  ALBIN DAVID S ,  BARNES TERESA ,  BURST JAMES ,  DUENOW JOEL N ,  REESE MATTHEW

IPC: H01L21/10

CPC classification number: H01L31/1828 ,  H01L21/0237 ,  H01L21/02474 ,  H01L21/02562 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02628 ,  H01L21/02631 ,  H01L21/02664 ,  H01L31/0296 ,  H01L31/073 ,  H01L31/1836 ,  Y02E10/543

Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.

Abstract translation: 提供了一种生产多晶CdTe材料的方法和掺入多晶CdTe材料的器件。 特别地，提供了一种用于CdTe太阳能电池中的多晶p掺杂CdTe薄膜的方法，其中CdTe薄膜具有增强的受主密度和少数载流子寿命，从而提高了含有CdTe材料的太阳能电池的效率。

公开(公告)号：WO2009116990A1

公开(公告)日：2009-09-24

申请号：PCT/US2008/057244

申请日：2008-03-17

Applicant: MIDWEST RESEARCH INSTITUTE ,  GESSERT, Timothy A. ,  DUENOW, Joel N. ,  BARNES, Teresa ,  COUTTS, Timothy J.

Inventor： GESSERT, Timothy A. ,  DUENOW, Joel N. ,  BARNES, Teresa ,  COUTTS, Timothy J.

IPC: H01B1/08 ,  H01B1/16

CPC classification number: H01B1/08 ,  H01B1/02

Abstract: A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm 2 /V-sec while simultaneously maintaining a high carrier density of ~4.4ex10 20 cm -3 .

Abstract translation: 一种透明导电氧化物（TCO）膜，包括：TCO层和选自钒，钼，钽，铌，锑，钛，锆和铪的元素的掺杂剂，其中元素是n型掺杂剂; 并且其中透明导电氧化物的特征在于约42cm 2 / V-sec的电子迁移率改善，同时保持约4.4×10 20 cm -3的高载流子密度。

公开(公告)号：WO2012177804A3

公开(公告)日：2012-12-27

申请号：PCT/US2012/043404

申请日：2012-06-20

Applicant: ALLIANCE FOR SUSTAINABLE ENERGY, LLC ,  GESSERT, Timothy A. ,  NOUFI, Rommel ,  DHERE, Ramesh G. ,  ALBIN, David S. ,  BARNES, Teresa ,  BURST, James ,  DUENOW, Joel N. ,  REESE, Matthew

Inventor： GESSERT, Timothy A. ,  NOUFI, Rommel ,  DHERE, Ramesh G. ,  ALBIN, David S. ,  BARNES, Teresa ,  BURST, James ,  DUENOW, Joel N. ,  REESE, Matthew

IPC: H01L29/22 ,  C01B19/00

Abstract: A method of producing polycrystalline CdTe materials and devices that incorporate the polycrystalline CdTe materials are provided. In particular, a method of producing polycrystalline p-doped CdTe thin films for use in CdTe solar cells in which the CdTe thin films possess enhanced acceptor densities and minority carrier lifetimes, resulting in enhanced efficiency of the solar cells containing the CdTe material are provided.