公开(公告)号：WO2013070472A2

公开(公告)日：2013-05-16

申请号：PCT/US2012/062867

申请日：2012-10-31

Applicant: LAM RESEARCH CORPORATION ,  MARAKHTANOV, Alexei ,  DHINDSA, Rajinder ,  HUDSON, Eric ,  BAILEY III, Andrew, D.

Inventor： MARAKHTANOV, Alexei ,  DHINDSA, Rajinder ,  HUDSON, Eric ,  BAILEY III, Andrew, D.

IPC: H01L21/3065 ,  C23F1/08

CPC classification number: H01J37/32091 ,  H01J37/32165 ,  H01J37/32174

Abstract: A system, method and apparatus for increasing an energy level of the ions emitted from a plasma include a plasma chamber, including a top electrode and a bottom electrode, a multiple RF sources, at least one of the RF sources being coupled to the bottom electrode. A phase locking circuit is coupled to at least two of the RF sources hereafter designated the first RF source and the second RF source. A controller is coupled to the plasma chamber, each of the RF sources and the phase locking circuit. The controller including operating system software, multiple logic circuits and a process recipe.

Abstract translation: 用于增加从等离子体发射的离子的能量水平的系统，方法和装置包括等离子体室，包括顶部电极和底部电极，多个RF源，至少一个RF源耦合到底部电极 。 相位锁定电路耦合到以下称为第一RF源和第二RF源的至少两个RF源。 控制器耦合到等离子体室，每个RF源和锁相电路。 该控制器包括操作系统软件，多个逻辑电路和一个过程配方。

公开(公告)号：WO2007005387A3

公开(公告)日：2007-01-11

申请号：PCT/US2006/024862

申请日：2006-06-28

Applicant: LAM RESEARCH CORPORATION ,  BAILEY III, Andrew, D.

Inventor： BAILEY III, Andrew, D.

IPC: G01B7/06

Abstract: A method of determining a thickness of a first conductive layer formed of a first conductive material on a target substrate, the target substrate further having a second conductive layer formed of a second conductive material is disclosed. The method comprises positioning a first eddy current sensor at a given position relative to the target substrate, and measuring a first set of electrical responses that includes at least one of a first voltage measurement and a first current measurement, at a first target substrate temperature, and a second set of measurements at a second temperature and calculating a third set of electrical responses, using the first and second sets of electrical responses and the first temperature coefficient of the first conductive layer, the third set of electrical responses representing responses substantially attributable to the first conductive layer; and determining the first thickness from the third set of electrical responses.

公开(公告)号：WO2005076349A1

公开(公告)日：2005-08-18

申请号：PCT/US2004/043912

申请日：2004-12-30

Applicant: LAM REASEARCH CORPORATION ,  BAILEY III, Andrew, D. ,  LOHOKARE, Shrikant, P.

Inventor： BAILEY III, Andrew, D. ,  LOHOKARE, Shrikant, P.

IPC: H01L21/768

CPC classification number: H01L21/67051 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/31116 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/6708 ,  H01L21/76819 ,  H01L21/7684

Abstract: A system and method for forming a semiconductor in a dual damascene structure including receiving a patterned semiconductor substrate. The semiconductor substrate having a first conductive interconnect material filling multiple features (102,104,106) in the pattern. The first conductive interconnect material having an overburden portion (112). The over burden portion is planarized. The over burden portion is substantially entirely removed in the planarizing process. A mask layer is reduced and a subsequent dielectric layer (1130) is formed on the planarized over burden portion. A mask is formed on the subsequent dielectric layer. One or more features are formed in the subsequent dielectric layer and the features are filled with a second conductive interconnect material.

Abstract translation: 一种用于在双镶嵌结构中形成半导体的系统和方法，包括接收图案化的半导体衬底。 所述半导体衬底具有填充所述图案中的多个特征（102,104,106）的第一导电互连材料。 第一导电互连材料具有覆盖层部分（112）。 过度负担部分被平坦化。 在平坦化处理中基本上完全除去过度负荷部分。 掩模层被还原，并且在平坦化的过度负载部分上形成随后的介电层（1130）。 在随后的介电层上形成掩模。 在随后的介电层中形成一个或多个特征，并且特征填充有第二导电互连材料。

公开(公告)号：WO2003012821A2

公开(公告)日：2003-02-13

申请号：PCT/US2002/023092

申请日：2002-07-18

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

Inventor： WILCOXSON, Mark, H. ,  BAILEY, III, Andrew, D. ,  KUTHI, Andras ,  SMITH, Michael, G.R. ,  SCHOEPP, Alan, M.

IPC: H01J37/00

CPC classification number: H01J37/321 ,  H01J37/32467

Abstract: An antenna arrangement for generating an electric field inside a process chamber is provided. Generally, the antenna arrangement comprises a first loop disposed around an antenna axis. The first loop comprises a first turn with a first turn gap; a second turn with a second turn gap, where the second turn is concentric and coplanar with the first turn and spaced apart from the first turn, and where the antenna axis passes through the center of the first turn and second turn; and a first turn-second turn connector electrically connected between a second end of the first turn and a first end of the second turn comprising a spanning section between and coplanar with the first turn and the second turn and which spans the first turn gap and the second turn gap.

Abstract translation: 提供了一种用于在处理室内产生电场的天线装置。 通常，天线装置包括围绕天线轴设置的第一回路。 第一回路包括具有第一匝间隙的第一匝; 具有第二匝间隙的第二匝，其中所述第二匝与所述第一匝同心并共面并与所述第一匝间隔开，并且其中所述天线轴穿过所述第一匝和第二匝的中心; 电连接在所述第一匝的第二端和所述第二匝的第一端之间的第一匝秒转向连接器包括在所述第一匝和所述第二匝之间并且与所述第一匝间隔和所述第二匝间隔并且 第二回合差距。

公开(公告)号：WO2011050062A3

公开(公告)日：2011-08-04

申请号：PCT/US2010053377

申请日：2010-10-20

Applicant: LAM RES CORP ,  SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

Inventor： SIRARD STEPHEN M ,  TAKESHITA KENJI ,  BAILEY III ANDREW D

IPC: H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

Abstract translation: 提供了用有机化合物修复对基于硅的低k电介质层的损伤的方法，其中损伤用连接到硅上的羟基连接到硅上的甲基替代。 提供了包含CH 4气体的修复气体。 将修复气体形成为等离子体，同时保持低于50mTorr的压力。 与由修复气体形成的等离子体中的甲基取代成硅的羟基。

公开(公告)号：WO2011050062A2

公开(公告)日：2011-04-28

申请号：PCT/US2010/053377

申请日：2010-10-20

Applicant: LAM RESEARCH CORPORATION ,  SIRARD, Stephen, M. ,  TAKESHITA, Kenji ,  BAILEY III, Andrew D.

Inventor： SIRARD, Stephen, M. ,  TAKESHITA, Kenji ,  BAILEY III, Andrew D.

IPC: H01L21/3105 ,  H01L21/311

CPC classification number: H01L21/3105 ,  H01L21/76814 ,  H01L21/76826

Abstract: A method for repairing damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A repair gas comprising CH 4 gas is provided. The repair gas is formed into a plasma, while maintaining a pressure below 50 mTorr. Hydroxyl attached to silicon is replaced with methyl from the plasma formed by the repair gas.

Abstract translation: 提供了一种用有机化合物修复对硅基低k电介质层的损伤的方法，其中损伤取代了附着于硅的羟基与硅连接的甲基。 提供包含CH 4气体的修复气体。 维修气体形成等离子体，同时保持压力低于50毫托。 连接在硅上的羟基被修复气体形成的等离子体中的甲基替代。

公开(公告)号：WO2009070216A1

公开(公告)日：2009-06-04

申请号：PCT/US2008/012842

申请日：2008-11-13

Applicant: LAM RESEARCH CORPORATION ,  BAILEY III, Andrew, D. ,  KIM, Yunsang

Inventor： BAILEY III, Andrew, D. ,  KIM, Yunsang

IPC: H01L21/302 ,  H01L21/30

CPC classification number: H01L21/02087 ,  H01J37/32532 ,  H01J2237/334 ,  H01L21/32134 ,  H01L21/6708

Abstract: The various embodiments described in the specification provide improved mechanisms of removal of unwanted deposits on the bevel edge to improve process yield. The embodiments provide apparatus and methods of treating the bevel edge of a copper plated substrate to convert the copper at the bevel edge to a copper compound that can be wet etched with a fluid at a high etch selectivity in comparison to copper. In one embodiment, the wet etch of the copper compound at high selectivity to copper allows the removal of the non¬ volatile copper at substrate bevel edge in a wet etch processing chamber. The plasma treatment at bevel edge allows the copper at bevel edge to be removed at precise spatial control to about 2 mm or below, such as about 1 mm, about 0.5 mm or about 0.25 mm, to the very edge of substrate. In addition, the apparatus and methods described above for bevel edge copper removal do not have the problems of copper etching fluid being splashed on the device regions to cause defects and thinning of copper films. Therefore, device yield can be greatly improved.

Abstract translation: 在说明书中描述的各种实施例提供了改进的机理，去除斜边上的不需要的沉积物以提高工艺产量。 实施例提供了处理镀铜衬底的斜边缘以将斜面边缘处的铜转化为铜化合物的设备和方法，铜化合物可以与铜相比以高蚀刻选择性用流体进行湿蚀刻。 在一个实施方案中，铜化合物对铜的高选择性的湿蚀刻允许在湿蚀刻处理室中去除衬底斜面边缘处的非挥发性铜。 在斜边缘处的等离子体处理允许在精确的空间控制下将斜角边缘处的铜去除到衬底的最边缘约2mm或更小，例如约1mm，约0.5mm或约0.25mm。 此外，上述用于斜边铜剥离的装置和方法不存在铜蚀刻流体溅射在器件区域上以引起铜膜缺陷和变薄的问题。 因此，可以大大提高器件产量。

公开(公告)号：WO2008097662A1

公开(公告)日：2008-08-14

申请号：PCT/US2008/001761

申请日：2008-02-07

Applicant: LAM RESEARCH CORPORATION ,  SEXTON, Gregory, S. ,  BAILEY III, Andrew D. ,  SCHOEPP, Alan, M. ,  BONIFACE, John, D.

Inventor： SEXTON, Gregory, S. ,  BAILEY III, Andrew D. ,  SCHOEPP, Alan, M. ,  BONIFACE, John, D.

IPC: H01L21/68

CPC classification number: H01L21/67069 ,  H01J37/32568

Abstract: Positional relationships are established in a process chamber. A base is configured with a lower electrode surface to support a wafer, and an upper electrode has a lower surface. A drive mounted on the base has a linkage connected to the upper electrode. A fixture placed on the lower surface moves into a desired orientation of the lower electrode. With the upper electrode loosely connected by the linkage to the drive, the fixture transfers the desired orientation to the upper electrode. The linkage is tightened to maintain the desired orientation, the fixture is removed and a process exclusion insert is mounted to the upper electrode. The drive moves the upper electrode and the insert to define an inactive process zone between the upper electrode and the wafer on the lower electrode to protect a central area of the wafer during etching of a wafer edge environ around the central area.

Abstract translation: 位置关系建立在一个过程室中。 基底配置有下电极表面以支撑晶片，并且上电极具有下表面。 安装在基座上的驱动器具有连接到上电极的连杆。 放置在下表面上的固定器移动到下电极的期望取向。 通过与驱动器的联动松动地连接上电极，固定装置将期望的方向传送到上电极。 连接件被拧紧以保持所需的取向，夹具被移除，并且将过程排除插入件安装到上电极。 驱动器移动上电极和插入件以在下电极上的上电极和晶片之间限定非活动的工艺区域，以在蚀刻围绕中心区域的晶片边缘环境时保护晶片的中心区域。

公开(公告)号：WO2007038030B1

公开(公告)日：2008-01-24

申请号：PCT/US2006036139

申请日：2006-09-15

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

IPC: H01J7/24 ,  H01L21/302

CPC classification number: H01L21/02087 ,  B08B7/0035

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract translation: 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：WO2007038514A3

公开(公告)日：2007-04-05

申请号：PCT/US2006/037492

申请日：2006-09-26

Applicant: LAM RESEARCH CORPORATION ,  KIM, Yunsang ,  BAILEY III, Andrew, D. ,  YOON, Hyungsuk Alexander

Inventor： KIM, Yunsang ,  BAILEY III, Andrew, D. ,  YOON, Hyungsuk Alexander

IPC: C23F1/00 ,  H01L21/306

Abstract: A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.