公开(公告)号：WO2007130630A3

公开(公告)日：2008-12-31

申请号：PCT/US2007010929

申请日：2007-05-04

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BAILEY ANDREW D III ,  JASON A RYDER ,  WILCOXSON MARK H ,  GASPARITSCH JEFFREY G ,  RANDY JOHNSON ,  HOFFMANN STEPHAN P

Inventor： YOON HYUNGSUK ALEXANDER ,  BAILEY ANDREW D III ,  JASON A RYDER ,  WILCOXSON MARK H ,  GASPARITSCH JEFFREY G ,  RANDY JOHNSON ,  HOFFMANN STEPHAN P

IPC: B08B11/02

CPC classification number: H01L21/67046 ,  Y10S134/902

Abstract: An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.

Abstract translation: 用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。 刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。 研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。 刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物 底物。

公开(公告)号：WO2008073245A1

公开(公告)日：2008-06-19

申请号：PCT/US2007/024859

申请日：2007-12-05

Applicant: LAM RESEARCH CORPORATION ,  DORDI, Yezdi ,  BOYD, John M. ,  REDEKER, Fritz C. ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  YOON, Hyungsuk Alexander

Inventor： DORDI, Yezdi ,  BOYD, John M. ,  REDEKER, Fritz C. ,  THIE, William ,  ARUNAGIRI, Tiruchirapalli ,  YOON, Hyungsuk Alexander

IPC: H01L21/28 ,  H01L21/283 ,  H01L21/20

CPC classification number: H01L23/53238 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.

Abstract translation: 提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。 含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。 钌区介于第一阻挡层和氧化钌区之间。 钌氧化物区位于钌区和富钌区之间。

公开(公告)号：WO2008027216A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: B05D3/00 ,  B05D1/18 ,  B29C71/04 ,  C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

公开(公告)号：WO2008027215A2

公开(公告)日：2008-03-06

申请号：PCT/US2007/018254

申请日：2007-08-17

Applicant: LAM RESEARCH CORPORATION ,  YOON, Hyungsuk, Alexander ,  BOYD, John, M. ,  KOROLIK, Mikhail ,  DORDI, Yezdi ,  REDEKER, Fritz, C.

Inventor： YOON, Hyungsuk, Alexander ,  BOYD, John, M. ,  KOROLIK, Mikhail ,  DORDI, Yezdi ,  REDEKER, Fritz, C.

IPC: B05D5/12 ,  C23C16/00 ,  B05D3/00 ,  C23C14/00 ,  B05C13/02 ,  H05K3/00 ,  B29C71/04 ,  C23C14/32

CPC classification number: H01L21/67207 ,  C23C16/0227 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/45517 ,  C23C16/45551 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76868

Abstract: The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.

Abstract translation: 这些实施例提供对铜互连进行衬底表面处理和膜沉积的综合设备和方法，具有改善的金属迁移性能和减少的空隙传播。 在一个示例性实施例中，提供了用于进行表面处理和膜沉积的室。 腔室包括用于衬底表面处理的第一邻近头部，其构造成分配第一处理气体以处理第一邻近头部下方的衬底表面的一部分用于衬底表面处理。 该室还包括用于原子层沉积（ALD）的第一邻近头，其被配置成顺序地分配第一反应气体和第一吹扫气体，以将第一ALD膜沉积在ALD的第二接近头下方。

公开(公告)号：WO2008027216A9

公开(公告)日：2008-05-22

申请号：PCT/US2007018270

申请日：2007-08-17

Applicant: LAM RES CORP ,  DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

IPC: C23C16/00

CPC classification number: H01L21/0206 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/32115 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76883

Abstract: The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

Abstract translation: 这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统 铜互连的界面粘合。 提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。 该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。 该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。 还提供了用于实践上述示例性方法的系统。

公开(公告)号：WO2008027214A2

公开(公告)日：2008-03-06

申请号：PCT/US2007018250

申请日：2007-08-17

Applicant: LAM RES CORP ,  BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

Inventor： BOYD JOHN ,  DORDI YEZDI ,  YOON HYUNGSUK ALEXANDER ,  REDEKER FRITZ C

IPC: B05D5/12 ,  B05C13/02 ,  B05D3/00 ,  B29C71/04 ,  C23C14/00 ,  C23C14/32 ,  C23C16/00 ,  H05K3/00

CPC classification number: H01L21/67196 ,  C23C14/22 ,  C23C16/06 ,  C23C16/44 ,  C23C16/45544 ,  C23C16/52 ,  C23C18/1619 ,  C23C18/1632 ,  C23C18/1653 ,  C23C18/38 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/288 ,  H01L21/321 ,  H01L21/32115 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/67028 ,  H01L21/67161 ,  H01L21/67201 ,  H01L21/67207 ,  H01L21/6723 ,  H01L21/76807 ,  H01L21/76814 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76876 ,  H01L21/76879

Abstract: The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.

Abstract translation: 实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。 阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。 或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。 一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层的示例性方法，以帮助在集成系统中在铜互连中沉积铜层，以便改善铜互连的电迁移性能 被提供。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将衬底在受控环境中转移和加工以防止形成金属阻挡氧化物。 该方法还包括在集成系统中的金属层上沉积功能化层。 该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

公开(公告)号：WO2008027205A2

公开(公告)日：2008-03-06

申请号：PCT/US2007/018212

申请日：2007-08-15

Applicant: LAM RESEARCH CORPORATION ,  NALLA, Praveen ,  THIE, William ,  BOYD, John ,  ARUNAGIRI, Tiruchirapalli ,  YOON, Hyungsuk, Alexander ,  REDEKER, Fritz, C. ,  DORDI, Yezdi

Inventor： NALLA, Praveen ,  THIE, William ,  BOYD, John ,  ARUNAGIRI, Tiruchirapalli ,  YOON, Hyungsuk, Alexander ,  REDEKER, Fritz, C. ,  DORDI, Yezdi

IPC: B05D5/12 ,  C23C16/00 ,  B05D3/00 ,  C23C14/00 ,  B05C13/02 ,  H05K3/00 ,  B29C71/04 ,  C23C14/32

CPC classification number: C23C16/45525 ,  C23C16/18 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76861

Abstract: The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.

Abstract translation: 这些实施例满足了能够沉积薄且保形的阻挡层和铜互连中的铜层的需要，具有良好的电迁移性能并且具有降低的铜互连的应力诱发空穴的风险。 电迁移和应力引起的空隙受到阻挡层和铜层之间的粘附的影响。 在阻挡层上沉积功能化层，以使铜层沉积在铜互连中。 官能化层与阻挡层和铜形成强结合，以改善两层之间的粘附性。 提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以辅助铜层沉积在铜互连中以便提高铜互连的电迁移性能的示例性方法。 该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，以及氧化金属阻挡层的表面。 该方法还包括将功能化层沉积在金属阻挡层的氧化表面上，并且在功能层沉积在金属阻挡层上之后，将铜层沉积在铜互连结构中。

公开(公告)号：WO2007038030B1

公开(公告)日：2008-01-24

申请号：PCT/US2006036139

申请日：2006-09-15

Applicant: LAM RES CORP ,  YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

Inventor： YOON HYUNGSUK ALEXANDER ,  BOYD JOHN ,  KUTHI ANDRAS ,  BAILEY III ANDREW D

IPC: H01J7/24 ,  H01L21/302

CPC classification number: H01L21/02087 ,  B08B7/0035

Abstract: An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.

Abstract translation: 公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

公开(公告)号：WO2007038514A3

公开(公告)日：2007-04-05

申请号：PCT/US2006/037492

申请日：2006-09-26

Applicant: LAM RESEARCH CORPORATION ,  KIM, Yunsang ,  BAILEY III, Andrew, D. ,  YOON, Hyungsuk Alexander

Inventor： KIM, Yunsang ,  BAILEY III, Andrew, D. ,  YOON, Hyungsuk Alexander

IPC: C23F1/00 ,  H01L21/306

Abstract: A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.

公开(公告)号：WO2007038256A2

公开(公告)日：2007-04-05

申请号：PCT/US2006/036959

申请日：2006-09-22

Applicant: LAM RESEARCH CORPORATION ,  YOON, Hyungsuk, Alexander ,  THIE, William ,  DORDI, Yezdi ,  BAILEY, Andrew, D., III

Inventor： YOON, Hyungsuk, Alexander ,  THIE, William ,  DORDI, Yezdi ,  BAILEY, Andrew, D., III

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31116 ,  H01L21/02063 ,  H01L21/67069 ,  H05H1/24 ,  H05H1/2406 ,  H05H1/48 ,  H05H2001/2418

Abstract: An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.

Abstract translation: 公开了一种从衬底生成用于去除金属氧化物的等离子体的装置。 该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。 该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽， 空腔在一端具有出口，用于提供等离子体以去除金属氧化物。