公开(公告)号：WO2012037094A2

公开(公告)日：2012-03-22

申请号：PCT/US2011/051355

申请日：2011-09-13

Applicant: CORNING INCORPORATED ,  CITES, Jeffrey S ,  ROSENBLUM, Steven S ,  WILDEMAN, George F

Inventor： CITES, Jeffrey S ,  ROSENBLUM, Steven S ,  WILDEMAN, George F

IPC: C03C21/00 ,  B32B17/00

CPC classification number: B32B17/00 ,  B32B3/00 ,  B32B3/04 ,  B32B17/10036 ,  B32B17/10137 ,  B32B17/10293 ,  C03C21/00 ,  F25D23/02 ,  Y10T428/23 ,  Y10T428/24628 ,  Y10T428/266

Abstract: A thin lightweight glass fascia for appliances. The fascia may be a seamless shaped glass fascia for an appliance, such as a glass fascia that wraps around at least two opposing edges of an appliance. The glass fascia may seamlessly incorporate a display or control panel under the fascia. A mounting arrangement that facilitates quick fascia removal and replacement may be provided. The fascia may be a chemically-strengthened glass sheet having a thickness of less than 2.0 mm, and a near-surface region under a compressive stress, wherein the compressive stress (CS) at a surface of the first glass sheet is greater than 300 MPa and extends to a depth of layer of at least 20 micrometers.

Abstract translation:

用于器具的轻薄玻璃仪表板。 面板可以是用于器具的无缝异形玻璃面板，例如包裹器具的至少两个相对边缘的玻璃面板。 玻璃仪表板可以无缝地将显示器或控制面板结合在面板下方。 可以提供便于快速移除和更换面板的安装装置。 面板可以是厚度小于2.0mm的化学强化玻璃板和压缩应力下的近表面区域，其中第一玻璃板表面处的压缩应力（CS）大于300MPa 并延伸至至少20微米的层深。

公开(公告)号：WO2012003157A1

公开(公告)日：2012-01-05

申请号：PCT/US2011/042068

申请日：2011-06-28

Applicant: CORNING INCORPORATED ,  SILICON ON INSULATOR TECHNOLOGIES S.A. ,  CHUANG, Ta Ko ,  CITES, Jeffrey S. ,  DELPRAT, Daniel ,  MOHAMED, Nadia B. ,  USENKO, Alex

Inventor： CHUANG, Ta Ko ,  CITES, Jeffrey S. ,  DELPRAT, Daniel ,  MOHAMED, Nadia B. ,  USENKO, Alex

IPC: H01L21/762

CPC classification number: H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

Abstract: A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Abstract translation: 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

公开(公告)号：WO2010059367A3

公开(公告)日：2010-08-05

申请号：PCT/US2009062531

申请日：2009-10-29

Applicant: CORNING INC ,  CHEREKDJIAN SARKO ,  CITES JEFFREY S ,  COUILLARD JAMES G ,  MASCHMEYER RICHARD O ,  MOORE MICHAEL J ,  USENKO ALEX

Inventor： CHEREKDJIAN SARKO ,  CITES JEFFREY S ,  COUILLARD JAMES G ,  MASCHMEYER RICHARD O ,  MOORE MICHAEL J ,  USENKO ALEX

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract translation: 方法和装置提供用于形成绝缘体上半导体（SOI）结构，包括使施主半导体晶片的注入表面进行离子注入步骤以在限定施主半导体晶片的剥离层的横截面上产生弱化片 ; 以及在所述离子注入步骤之前，期间或之后对所述施主半导体晶片进行空间变化步骤，使得所述弱化切片的至少一个参数在X轴和Y轴中的至少一个中在所述弱化切片之间空间上变化 方向。

公开(公告)号：WO2010059361A3

公开(公告)日：2010-08-12

申请号：PCT/US2009062504

申请日：2009-10-29

Applicant: CORNING INC ,  CHEREKDJIAN SARKO ,  CITES JEFFREY S ,  COUILLARD JAMES G ,  MASCHMEYER RICHARD O ,  MOORE MICHAEL J ,  USENKO ALEX

Inventor： CHEREKDJIAN SARKO ,  CITES JEFFREY S ,  COUILLARD JAMES G ,  MASCHMEYER RICHARD O ,  MOORE MICHAEL J ,  USENKO ALEX

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

Abstract translation: 提供了用于形成绝缘体上半导体（SOI）结构的方法和设备，其包括使施主半导体晶片的注入表面经受离子注入步骤以在限定供体半导体晶片的剥离层的横截面中产生弱化层 ; 以及在所述离子注入步骤之前，期间或之后使所述施主半导体晶片经历空间变化步骤，使得所述弱化层的至少一个参数在X轴和Y轴中的至少一个中在所述弱化层上在空间上变化 方向。

公开(公告)号：WO2009017622A1

公开(公告)日：2009-02-05

申请号：PCT/US2008/008873

申请日：2008-07-22

Applicant: CORNING INCORPORATED ,  AHN, Sung E ,  CITES, Jeffrey S ,  JANG, Jin ,  WANG, Chuanche ,  WILLIAMS, Carlo A

Inventor： AHN, Sung E ,  CITES, Jeffrey S ,  JANG, Jin ,  WANG, Chuanche ,  WILLIAMS, Carlo A

IPC: H01L29/786 ,  H01L21/762

CPC classification number: H01L29/78603 ,  H01L21/2007 ,  H01L29/78654

Abstract: Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.

Abstract translation: 用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

公开(公告)号：WO2007142910A2

公开(公告)日：2007-12-13

申请号：PCT/US2007012602

申请日：2007-05-24

Applicant: CORNING INC ,  CITES JEFFREY S ,  GADKAREE KISHOR P ,  MASCHMEYER RICHARD O

Inventor： CITES JEFFREY S ,  GADKAREE KISHOR P ,  MASCHMEYER RICHARD O

IPC: H01L21/762 ,  H01L21/265 ,  H01L27/12

CPC classification number: H01L21/76254 ,  H01L21/26506

Abstract: Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

Abstract translation: 公开了使用纯化离子淋浴制备SOI和SOG结构以将离子注入给体衬底的方法。 纯化的离子淋浴提供方便，高效，低成本和有效的离子注入，同时最小化对剥离膜的损害。

公开(公告)号：WO2007142852A2

公开(公告)日：2007-12-13

申请号：PCT/US2007/012360

申请日：2007-05-24

Applicant: CORNING INCORPORATED ,  CITES, Jeffrey, S. ,  GADKAREE, Kishor, P. ,  MASCHMEYER, Richard, O.

Inventor： CITES, Jeffrey, S. ,  GADKAREE, Kishor, P. ,  MASCHMEYER, Richard, O.

CPC classification number: H01L21/187

Abstract: Disclosed are methods for making SOI and SOG structures using ion shower for implanting ions to the donor substrate. The ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

Abstract translation: 公开了使用离子淋浴制造SOI和SOG结构以将离子注入供体衬底的方法。 离子淋浴提供方便，高效，低成本和有效的离子注入，同时最大限度地减少对剥离膜的损伤。

公开(公告)号：WO2010059361A2

公开(公告)日：2010-05-27

申请号：PCT/US2009/062504

申请日：2009-10-29

Applicant: CORNING INCORPORATED ,  CHEREKDJIAN, Sarko ,  CITES, Jeffrey, S. ,  COUILLARD, James, G. ,  MASCHMEYER, Richard, O. ,  MOORE, Michael, J. ,  USENKO, Alex

Inventor： CHEREKDJIAN, Sarko ,  CITES, Jeffrey, S. ,  COUILLARD, James, G. ,  MASCHMEYER, Richard, O. ,  MOORE, Michael, J. ,  USENKO, Alex

IPC: H01L21/762

CPC classification number: H01L21/76254

Abstract: Methods and apparatus provide for forming a semiconductor-on-insulator (SOI) structure, including subjecting a implantation surface of a donor semiconductor wafer to an ion implantation step to create a weakened slice in cross-section defining an exfoliation layer of the donor semiconductor wafer; and subjecting the donor semiconductor wafer to a spatial variation step, either before, during or after the ion implantation step, such that at least one parameter of the weakened slice varies spatially across the weakened slice in at least one of X- and Y- axial directions.

公开(公告)号：WO2009099576A3

公开(公告)日：2009-08-13

申请号：PCT/US2009/000640

申请日：2009-01-30

Applicant: CORNING INCORPORATED ,  CITES, Jeffrey S ,  DAWSON-ELLI, David ,  KOSIK-WILLIAMS, Carlo ,  MOZDY, Eric

Inventor： CITES, Jeffrey S ,  DAWSON-ELLI, David ,  KOSIK-WILLIAMS, Carlo ,  MOZDY, Eric

IPC: G06F3/041

Abstract: Methods and apparatus for producing a touch sensitive LCD employing a semiconductor on glass (SiOG) structure provide for: a glass or glass-ceramic substrate; a single crystal semiconductor layer bonded to the glass or glass-ceramic substrate; display circuitry including a plurality of thin-film transistors disposed on the single crystal semiconductor layer and forming a matrix of display pixels; display control circuitry operable to drive the display circuitry to produce viewable images; and sensing circuitry operable to detect electrical characteristic changes in one or more of the single crystal semiconductor layer and the display circuitry, the electrical characteristic changes resulting from user touch events.

公开(公告)号：WO2009099576A2

公开(公告)日：2009-08-13

申请号：PCT/US2009000640

申请日：2009-01-30

Applicant: CORNING INC ,  CITES JEFFREY S ,  DAWSON-ELLI DAVID ,  KOSIK-WILLIAMS CARLO ,  MOZDY ERIC

Inventor： CITES JEFFREY S ,  DAWSON-ELLI DAVID ,  KOSIK-WILLIAMS CARLO ,  MOZDY ERIC

IPC: G06F3/041

CPC classification number: G06F3/0412 ,  G06F3/044

Abstract: Methods and apparatus for producing a touch sensitive LCD employing a semiconductor on glass (SiOG) structure provide for: a glass or glass-ceramic substrate; a single crystal semiconductor layer bonded to the glass or glass-ceramic substrate; display circuitry including a plurality of thin-film transistors disposed on the single crystal semiconductor layer and forming a matrix of display pixels; display control circuitry operable to drive the display circuitry to produce viewable images; and sensing circuitry operable to detect electrical characteristic changes in one or more of the single crystal semiconductor layer and the display circuitry, the electrical characteristic changes resulting from user touch events.

Abstract translation: 使用玻璃上的半导体（SiOG）结构的触敏LCD的制造方法和装置提供：玻璃或玻璃陶瓷基片; 结合到玻璃或玻璃陶瓷基板的单晶半导体层; 显示电路，包括设置在单晶半导体层上并形成显示像素矩阵的多个薄膜晶体管; 显示控制电路，可操作以驱动显示电路以产生可视图像; 以及可操作以检测单晶半导体层和显示电路中的一个或多个中的电特性变化的感测电路，由用户触摸事件导致的电特性变化。