公开(公告)号：WO2008036484A2

公开(公告)日：2008-03-27

申请号：PCT/US2007/076163

申请日：2007-08-17

Applicant: SANDISK CORPORATION ,  CHIEN, Henry ,  MATAMIS, George ,  PHAM, Tuan ,  HIGASHITANI, Masaaki ,  HORIUCHI, Hidetaka ,  LUTZE, Jeffrey, W. ,  MOKHLESI, Nima ,  FONG, Yupin, Kawing

Inventor： CHIEN, Henry ,  MATAMIS, George ,  PHAM, Tuan ,  HIGASHITANI, Masaaki ,  HORIUCHI, Hidetaka ,  LUTZE, Jeffrey, W. ,  MOKHLESI, Nima ,  FONG, Yupin, Kawing

CPC classification number: H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures. An array having inverted-T shaped floating gates may be formed in a self-aligned manner.

Abstract translation: 非易失性存储器阵列包括沿垂直于浮动单元连接在一起以形成串的方向的平面的横截面中具有倒T形形状的浮置栅极。 相邻的串被浅沟槽隔离结构隔离。 具有倒T形浮置栅极的阵列可以以自对准方式形成。

公开(公告)号：WO2008036484A3

公开(公告)日：2008-08-07

申请号：PCT/US2007076163

申请日：2007-08-17

Applicant: SANDISK CORP ,  CHIEN HENRY ,  MATAMIS GEORGE ,  PHAM TUAN ,  HIGASHITANI MASAAKI ,  HORIUCHI HIDETAKA ,  LUTZE JEFFREY W ,  MOKHLESI NIMA ,  FONG YUPIN KAWING

Inventor： CHIEN HENRY ,  MATAMIS GEORGE ,  PHAM TUAN ,  HIGASHITANI MASAAKI ,  HORIUCHI HIDETAKA ,  LUTZE JEFFREY W ,  MOKHLESI NIMA ,  FONG YUPIN KAWING

IPC: H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788

CPC classification number: H01L27/115 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7881

Abstract: A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures. An array having inverted-T shaped floating gates may be formed in a self-aligned manner.

Abstract translation: 非易失性存储器阵列包括沿着垂直于浮动单元连接在一起以形成串的方向的平面的横截面具有倒T形的浮动栅极。 相邻的串由浅沟槽隔离结构隔离。 具有倒T形浮置栅极的阵列可以以自对准的方式形成。